Freescale Semiconductor DocumentNumber:MRF6V2150N Technical Data Rev.4,4/2010 RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V2150NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2150NBR1 frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial,medicalandscientificapplications. • TypicalCWPerformanceat220MHz:VDD=50Volts,IDQ=450mA, 10--450MHz,150W,50V P =150Watts out LATERALN--CHANNEL PowerGain(cid:151)25dB SINGLE--ENDED DrainEfficiency(cid:151)68.3% BROADBAND • CapableofHandling10:1VSWR,@50Vdc,220MHz,150WattsCW RFPOWERMOSFETs OutputPower Features • CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParameters CASE1486--03,STYLE1 TO--270WB--4 • QualifiedUptoaMaximumof50VDDOperation PLASTIC • IntegratedESDProtection MRF6V2150NR1 • 225°CCapablePlasticPackage • RoHSCompliant • InTapeandReel.R1Suffix=500Unitsper44mm,13inchReel. CASE1484--04,STYLE1 TO--272WB--4 PLASTIC MRF6V2150NBR1 PARTSARESINGLE--ENDED Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDSS --0.5,+110 Vdc RFin/VGS RFout/VDS Gate--SourceVoltage VGS --0.5,+12 Vdc StorageTemperatureRange Tstg --65to+150 °C RFin/VGS RFout/VDS CaseOperatingTemperature TC 150 °C OperatingJunctionTemperature(1,2) TJ 225 °C Table2.ThermalCharacteristics (TopView) Characteristic Symbol Value(2,3) Unit Note: Exposedbacksideofthepackageis thesourceterminalforthetransistor. ThermalResistance,JunctiontoCase Figure1.PinConnections CaseTemperature80°C,150WCW RθJC 0.24 °C/W Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A(Minimum) ChargeDeviceModel(perJESD22--C101) IV(Minimum) 1. ContinuoususeatmaximumtemperaturewillaffectMTTF. 2. MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/Calculatorstoaccess MTTFcalculatorsbyproduct. 3. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. ©FreescaleSemiconductor,Inc.,2007--2008,2010.Allrightsreserved. MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 1

Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 °C Table5.ElectricalCharacteristics (TA=25°Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 2.5 mA (VDS=100Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 50 μAdc (VDS=50Vdc,VGS=0Vdc) Drain--SourceBreakdownVoltage V(BR)DSS 110 (cid:151) (cid:151) Vdc (ID=75mA,VGS=0Vdc) Gate--SourceLeakageCurrent IGSS (cid:151) (cid:151) 10 μAdc (VGS=5Vdc,VDS=0Vdc) OnCharacteristics GateThresholdVoltage VGS(th) 1 1.62 3 Vdc (VDS=10Vdc,ID=400μAdc) GateQuiescentVoltage VGS(Q) 1.5 2.6 3.5 Vdc (VDD=50Vdc,ID=450mAdc,MeasuredinFunctionalTest) Drain--SourceOn--Voltage VDS(on) (cid:151) 0.26 (cid:151) Vdc (VGS=10Vdc,ID=1Adc) DynamicCharacteristics ReverseTransferCapacitance Crss (cid:151) 1.6 (cid:151) pF (VDS=50Vdc±30mV(rms)ac@1MHz,VGS=0Vdc) OutputCapacitance Coss (cid:151) 93 (cid:151) pF (VDS=50Vdc±30mV(rms)ac@1MHz,VGS=0Vdc) InputCapacitance Ciss (cid:151) 163 (cid:151) pF (VDS=50Vdc,VGS=0Vdc±30mV(rms)ac@1MHz) FunctionalTests(InFreescaleTestFixture,50ohmsystem)VDD=50Vdc,IDQ=450mA,Pout= 150W,f=220MHz,CW PowerGain Gps 23.5 25 26.5 dB DrainEfficiency ηD 66 68.3 (cid:151) % InputReturnLoss IRL (cid:151) --17 --9 dB TypicalPerformances(InFreescale27MHzand450MHzTestFixtures,50ohmsystem)VDD=50Vdc,IDQ=450mA,Pout=150WCW PowerGain f=27MHz Gps (cid:151) 32.3 (cid:151) dB f=450MHz (cid:151) 22.9 (cid:151) DrainEfficiency f=27MHz ηD (cid:151) 78.7 (cid:151) % f=450MHz (cid:151) 57.6 (cid:151) InputReturnLoss f=27MHz IRL (cid:151) --10.6 (cid:151) dB f=450MHz (cid:151) --17.6 (cid:151) ATTENTION:TheMRF6V2150NandMRF6V2150NBarehighpowerdevicesandspecialconsiderations mustbefollowedinboarddesignandmounting.Incorrectmountingcanleadtointernaltemperatureswhich exceedthemaximumallowableoperatingjunctiontemperature.RefertoFreescaleApplicationNoteAN3263 (forboltdownmounting)orAN1907(forsolderreflowmounting)PRIORTOSTARTINGSYSTEMDESIGNto ensurepropermountingofthesedevices. MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 2 FreescaleSemiconductor

B3 VSUPPLY + B1 C17 C18 C19 C20 VBIAS L2 + + + R1 B2 C1 C2 C3 C4 C5 C6 C7 C14 C15 C16 L1 RF C8 C9 C10 C11 R2 L3 OUTPUT Z7 Z8 Z9 Z10 Z11 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 C23 C21 C22 C12 DUT C13 Z1 0.352″x0.082″Microstrip Z8 0.443″x0.170″Microstrip Z2 0.944″x0.082″Microstrip Z9 2.360″x0.170″Microstrip Z3 1.480″x0.082″Microstrip Z10 0.502″x0.170″Microstrip Z4 0.276″x0.220″Microstrip Z11 0.443″x0.082″Microstrip Z5 0.434″x0.220″Microstrip PCB ArlonCuClad250GX--0300--55--22,0.030″,εr=2.55 Z6,Z7 0.298″x0.630″Microstrip Figure2.MRF6V2150NR1(NBR1)TestCircuitSchematic(cid:151)220MHz Table6.MRF6V2150NR1(NBR1)TestCircuitComponentDesignationsandValues(cid:151)220MHz Part Description PartNumber Manufacturer B1,B2 95Ω,100MHzLongFerriteBeads,SurfaceMount 2743021447 Fair--Rite B3 47Ω,100MHzShortFerriteBead,SurfaceMount 2743019447 Fair--Rite C1 47μF,50VElectrolyticCapacitor 476KXM063M IllinoisCapacitor C2 22μF,35VTantalumChipCapacitor T494X226K035AT Kemet C3 10μF,35VTantalumChipCapacitor T491D106K035AT Kemet C4,C17 39KpFChipCapacitors ATC200B393KT50XT ATC C5,C18 22KpFChipCapacitors ATC200B203KT50XT ATC C6,C11,C19 0.1μF,50VChipCapacitors CDR33BX104AKYS Kemet C7,C8,C15,C16 2.2μF,50VChipCapacitors C1825C225J5RAC Kemet C9,C12,C14,C23 1000pFChipCapacitors ATC100B102JT50XT ATC C10 220nFChipCapacitor C1812C224K5RAC Kemet C13 75pFChipCapacitor ATC100B750JT500XT ATC C20 470μF,63VElectrolyticCapacitor ESME630ELL471MK25S UnitedChemi--Con C21 30pFChipCapacitor ATC100B300JT500XT ATC C22 33pFChipCapacitor ATC100B330JT500XT ATC L1 4Turn#18AWG,0.18″ID None None L2 82nHInductor 1812SMS--82NJL Coilcraft L3 17.5nHInductor B06TJL Coilcraft R1 270Ω,1/4WChipResistor CRCW12062700FKEA Vishay R2 27Ω,1/4WChipResistor CRCW12064R75FKEA Vishay MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 3

C2 C3 C1 + B1 B3 + C4 C19 C5 C18 C7 C6 C17 C20 R1 B2 C10 C8 C15* L2 C11 C16* C9 C12 C14 R2 L3 L1 C23 A E C21 R A C22 T U O T U C C13 MRF6V2150N/NB Rev.3 *Stacked Figure3.MRF6V2150NR1(NBR1)TestCircuitComponentLayout(cid:151)220MHz MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 4 FreescaleSemiconductor

TYPICALCHARACTERISTICS 1000 100 Ciss S) P (pF)100 Coss (AM E T C N N E CITA Measuredwith±30mV(rms)ac@1MHz URR 10 CAPA 10 VGS=0Vdc AINC C, DR Crss I,D TC=25°C 1 1 0 10 20 30 40 50 1 10 100 200 VDS,DRAIN--SOURCEVOLTAGE(VOLTS) VDS,DRAIN--SOURCEVOLTAGE(VOLTS) Figure4.CapacitanceversusDrain--SourceVoltage Figure5.DCSafeOperatingArea 5 27 4 26 IDQ=675mA MPS) VGS=3V dB) 25 563mA NT(A 3 GAIN( 450mA E 2.75V R R 24 R E U W DRAINC 2 2.5V 2.63V G,POps 23 337mA I,D 1 22 225mA VDD=50Vdc f=220MHz 2.25V 0 21 0 20 40 60 80 100 120 1 10 100 200 DRAINVOLTAGE(VOLTS) Pout,OUTPUTPOWER(WATTS)CW Figure6.DCDrainCurrentversusDrainVoltage Figure7.CWPowerGainversusOutputPower --10 58 VDD=50Vdc,f1=220MHz,f2=220.1MHz N --15 Two--ToneMeasurements,100kHzToneSpacing O RMODULATIdBc) ------232500 33ID6Qm=A225mA WER(dBm) 5564 P1dB=P532d.B27=d5B2m.61(1d6B8.m66(1W82).39W) Ideal ORDERINTEDISTORTION( ------344505 45056m3AmA OUTPUTPO 52 Actual HIRD --50 685mA P,out 50 D,T --55 900mA VDD=50Vdc,IDQ=450mA M f=220MHz I --60 48 5 10 100 300 22 24 26 28 30 32 Pout,OUTPUTPOWER(WATTS)PEP Pin,INPUTPOWER(dBm) Figure8.ThirdOrderIntermodulationDistortion Figure9.CWOutputPowerversusInputPower versusOutputPower MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 5

TYPICALCHARACTERISTICS 26 55 24 m) 50 TC=--30_C 85_C B) dB (d 22 R( 25_C GAIN 45V 50V OWE R 20 40V P 45 E T W U O 35V P P 18 UT G,ps 16 25V 30V IfD=Q2=2045M0HmzA P,Oout 40 VIDDQD==45500VmdAc VDD=20V f=220MHz 14 35 0 50 100 150 200 10 15 20 25 30 35 Pout,OUTPUTPOWER(WATTS)CW Pin,INPUTPOWER(dBm) Figure10.PowerGainversusOutputPower Figure11.PowerOutputversusPowerInput 28 80 108 25_C 27 70 85_C N(dB) 26 TC=--30_C Gps --30_C 60 NCY(%) S) 107 GAI 25 50 CIE UR G,POWERps 2243 258_5C_C 4300 DRAINEFFID, MTTF(HO 106 ηD VDD=50Vdc η 22 IDQ=450mA 20 f=220MHz 21 10 105 5 10 100 200 90 110 130 150 170 190 210 230 250 Pout,OUTPUTPOWER(WATTS)CW TJ,JUNCTIONTEMPERATURE(°C) Figure12.PowerGainandDrainEfficiency ThisabovegraphdisplayscalculatedMTTFinhourswhenthedevice versusCWOutputPower isoperatedatVDD=50Vdc,Pout=150WCW,andηD=68.3%. MTTFcalculatoravailableathttp://www.freescale.com/rf.Select Software&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. Figure13.MTTFversusJunctionTemperature MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 6 FreescaleSemiconductor

Zsource f=220MHz Zo=10Ω Zload f=220MHz VDD=50Vdc,IDQ=450mA,Pout=150WCW f Zsource Zload MHz Ω Ω 220 2.45+j6.95 3.90+j5.50 Zsource = Testcircuitimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasuredfrom draintoground. Input Device Output Matching Under Matching Network Test Network Z Z source load Figure14.SeriesEquivalentSourceandLoadImpedance(cid:151)220MHz MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 7

C14 C15 C19 B1 B3 C13 L4*,R4*,** C6 C12 B2 C11 C20 L3*,R3*,** C10 C18 C7 C17 C8 C9 C16 L2* C4 C2 T1 L1 A C3 E C5 C1 R A R1,R2 UT O T U C T2 27MHz 272--WB Rev.1 Figure15.MRF6V2150NR1(NBR1)TestCircuitComponentLayout(cid:151)27MHz Table7.MRF6V2150NR1(NBR1)TestCircuitComponentDesignationsandValues(cid:151)27MHz Part Description PartNumber Manufacturer B1,B3 95Ω,100MHzLongFerriteBeads 2743021447 Fair--Rite B2 47Ω,100MHzShortFerriteBead 2743019447 Fair--Rite C1,C4,C5,C16 100pFChipCapacitors ATC100B101JT500XT ATC C2 620pFChipCapacitor ATC100B621JT200XT ATC C3 1000pFChipCapacitor ATC100B102JT50XT ATC C6 2.2μF,50VChipCapacitor C1825C225J5RAC--TU Kemet C7 0.1μFChipCapacitor CDR33BX104AKYS Kemet C8 0.22μF,50VChipCapacitor C1812C224K5RAC--TU Kemet C9,C12 22KpFChipCapacitors ATC200B223KT50XT ATC C10,C18 0.01μF,100VChipCapacitors C1825C103K1GAC--TU Kemet C11,C19 0.1pFChipCapacitors ATC100B0R1BT500XT ATC C13,C17 39KpFChipCapacitors ATC200B393KT50XT ATC C14 22μF,35VTantalumCapacitor T491X226K035AT Kemet C15 10μF,35VTantalumCapacitor T491D106K035AT Kemet C20 470μF,63VElectrolyticCapacitor MCGPR63V477M13X26--RH Multicomp L1 47nHInductor 1812SMS--47NJ Coilcraft L2* 9Turn,#16AWG,Inductor,HandWound,0.250″ID CopperWire L3* 10Turn,#16AWG,Inductor,HandWound,0.375″ID CopperWire L4* 9Turn,#16AWG,Inductor,HandWound,0.375″ID CopperWire R1,R2 3.3Ω,1/2WChipResistors RK73B2ETTD3R3J KOA R3*,** 1KΩ,1/4WResistor MCCFR0W4J0102A50 Multicomp R4*,** 510Ω,1/2WResistor MCRC1/2G511JT--RH Multicomp T1 RF600Transformer16:1ImpedanceRatio RF600LF--16 CommConcepts T2 RF1000Transformer9:1ImpedanceRatio RF1000LF--9 CommConcepts *Leadedcomponentsmountedovertraces. **Resistorismountedatcenterofinductorcoil. MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 8 FreescaleSemiconductor

C10 C9 C8 C6 C21 C7 B3 + B1 C20 L4 C22 C19 B2 C18 C11 C5 L1 C2 C13 C16 C17 C3 L2 A L3 E R A C1 T C15 C4 U CC1122 O C14 T U C 450MHz 272--WB Rev.1 Figure16.MRF6V2150NR1(NBR1)TestCircuitComponentLayout(cid:151)450MHz Table8.MRF6V2150NR1(NBR1)TestCircuitComponentDesignationsandValues(cid:151)450MHz Part Description PartNumber Manufacturer B1,B2,B3 47Ω,100MHzShortFerriteBeads 2743019447 Fair--Rite C1 6.8pFChipCapacitor ATC100B6R8CT500XT ATC C2 15pFChipCapacitor ATC100B150JT500XT ATC C3,C5,C17,C18 240pFChipCapacitors ATC100B241JT200XT ATC C4 36pFChipCapacitor ATC100B360JT500XT ATC C6,C21 0.1μF,50VChipCapacitors CDR33BX104AKYS Kemet C7,C20 10KpFChipCapacitors ATC200B103KT50XT ATC C8,C19 22KpFChipCapacitors ATC200B223KT50XT ATC C9 10μF,35VTantalumCapacitor T491D106K035AS Kemet C10 22μF,35VTantalumCapacitor T491X226K035AS Kemet C11 47μF,50VElectrolyticCapacitor 476KXM050M IllinoisCapacitor C12 18pFChipCapacitor ATC100B180JT500XT ATC C13 10pFChipCapacitor ATC100B100JT500XT ATC C14 0.6--4.5pFVariableCapacitor 27271SL Johanson C15 3pFChipCapacitor ATC100B3R0CT500XT ATC C16 0.5pFChipCapacitor ATC100B0R5BT500XT ATC C22 470μF,63VElectrolyticCapacitor MCGPR63V477M13X26--RH Multicomp L1,L2 5nHMiniSpringAirCoreInductors A02TKLC Coilcraft L3 17.5nHMiniSpringAirCoreInductor B06TJLC Coilcraft L4 82nHMidiSpringAirCoreInductor 1812SMS--82NJLC Coilcraft PCB ArlonCuClad250GX--0300--55--22,0.030″,εr=2.55 DS2054 DS MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 9

f=27MHz Zsource Zo=50Ω f=450MHz Zsource f=27MHz Zload f=450MHz Zload VDD=50Vdc,IDQ=450mA,Pout=150WCW f Zsource Zload MHz Ω Ω 27 6.57+j41.4 7.16+j3.02 450 0.80+j3.20 2.20+j2.30 Zsource = Testcircuitimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasuredfrom draintoground. Input Device Output Matching Under Matching Network Test Network Z Z source load Figure17.SeriesEquivalentSourceandLoadImpedance(cid:151)27,450MHz MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 10 FreescaleSemiconductor

PACKAGEDIMENSIONS MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 11

MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 12 FreescaleSemiconductor

MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 13

MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 14 FreescaleSemiconductor

MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 15

MRF6V2150NR1MRF6V2150NBR1 RFDeviceData 16 FreescaleSemiconductor

PRODUCTDOCUMENTATIONANDSOFTWARE Refertothefollowingdocumentstoaidyourdesignprocess. ApplicationNotes • AN1907:SolderReflowAttachMethodforHighPowerRFDevicesinPlasticPackages • AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers • AN3263:BoltDownMountingMethodforHighPowerRFTransistorsandRFICsinOver--MoldedPlasticPackages EngineeringBulletins • EB212:UsingDataSheetImpedancesforRFLDMOSDevices Software • ElectromigrationMTTFCalculator • RFHighPowerModel ForSoftware,doaPartNumbersearchathttp://www.freescale.com,andselectthe(cid:147)PartNumber(cid:148)link.GototheSoftware& Toolstabonthepart(cid:146)sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 Feb.2007 • InitialReleaseofDataSheet 1 May2007 • CorrectedTestCircuitComponentpartnumbersinTable6,ComponentDesignationsandValuesforC4, C17,C5,C18,C9,C12,C14,C23,C13,C21,andC22,p.3 2 Apr.2008 • AddedCaseOperatingTemperaturelimittotheMaximumRatingstableandsetlimitto150°C,p.1 • CorrectedCisstestconditiontoindicateACstimulusontheVGSconnectionversustheVDSconnection, DynamicCharacteristicstable,p.2 • UpdatedPCBinformationtoshowmorespecificmaterialdetails,Fig.2,TestCircuitSchematic,p.3 • UpdatedPartNumbersinTable6,ComponentDesignationsandValues,tolatestRoHScompliantpart numbers,p.3 • ReplacedCaseOutline1486--03,IssueC,with1486--03,IssueD,p.8--10.Addedpinnumbers1through4 onSheet1. • ReplacedCaseOutline1484--04,IssueD,with1484--04,IssueE,p.11--13.Addedpinnumbers1through 4onSheet1,replacingGateandDrainnotationswithPin1andPin2designations. 3 Dec.2008 • AddedTypicalPerformancestablefor27MHz,450MHzapplications,p.2 • AddedFigs.15and16,TestCircuitComponentLayout--27MHzand450MHz,andTables7and8,Test CircuitComponentDesignationsandValues--27MHzand450MHz,p.8,9 • AddedFig.17,SeriesEquivalentSourceandLoadImpedancefor27MHz,450MHz,p.10 4 Apr.2010 • OperatingJunctionTemperatureincreasedfrom200°Cto225°CinMaximumRatingstable,related (cid:147)ContinuoususeatmaximumtemperaturewillaffectMTTF(cid:148)footnoteaddedandchanged200°Cto225°C inCapablePlasticPackagebullet,p.1 • AddedElectromigrationMTTFCalculatorandRFHighPowerModelavailabilitytoProductSoftware, p.17 MRF6V2150NR1MRF6V2150NBR1 RFDeviceData FreescaleSemiconductor 17

HowtoReachUs: HomePage: www.freescale.com WebSupport: http://www.freescale.com/support USA/EuropeorLocationsNotListed: FreescaleSemiconductor,Inc. TechnicalInformationCenter,EL516 2100EastElliotRoad Tempe,Arizona85284 1--800--521--6274or+1--480--768--2130 www.freescale.com/support Europe,MiddleEast,andAfrica: FreescaleHalbleiterDeutschlandGmbH Informationinthisdocumentisprovidedsolelytoenablesystemandsoftware TechnicalInformationCenter implementerstouseFreescaleSemiconductorproducts.Therearenoexpressor Schatzbogen7 81829Muenchen,Germany impliedcopyrightlicensesgrantedhereundertodesignorfabricateanyintegrated +441296380456(English) circuitsorintegratedcircuitsbasedontheinformationinthisdocument. +46852200080(English) +498992103559(German) FreescaleSemiconductorreservestherighttomakechangeswithoutfurthernoticeto +33169354848(French) anyproductsherein.FreescaleSemiconductormakesnowarranty,representationor www.freescale.com/support guaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoes FreescaleSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseof Japan: anyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithout FreescaleSemiconductorJapanLtd. Headquarters limitationconsequentialorincidentaldamages.(cid:147)Typical(cid:148)parametersthatmaybe ARCOTower15F providedinFreescaleSemiconductordatasheetsand/orspecificationscananddo 1--8--1,Shimo--Meguro,Meguro--ku, varyindifferentapplicationsandactualperformancemayvaryovertime.Alloperating Tokyo153--0064 parameters,including(cid:147)Typicals(cid:148),mustbevalidatedforeachcustomerapplicationby Japan customer(cid:146)stechnicalexperts.FreescaleSemiconductordoesnotconveyanylicense 0120191014or+81354379125 underitspatentrightsnortherightsofothers.FreescaleSemiconductorproductsare support.japan@freescale.com notdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedfor surgicalimplantintothebody,orotherapplicationsintendedtosupportorsustainlife, Asia/Pacific: FreescaleSemiconductorChinaLtd. orforanyotherapplicationinwhichthefailureoftheFreescaleSemiconductorproduct ExchangeBuilding23F couldcreateasituationwherepersonalinjuryordeathmayoccur.ShouldBuyer No.118JianguoRoad purchaseoruseFreescaleSemiconductorproductsforanysuchunintendedor ChaoyangDistrict unauthorizedapplication,BuyershallindemnifyandholdFreescaleSemiconductor Beijing100022 anditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstall China claims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof, +861058798000 directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuch support.asia@freescale.com unintendedorunauthorizeduse,evenifsuchclaimallegesthatFreescale Semiconductorwasnegligentregardingthedesignormanufactureofthepart. ForLiteratureRequestsOnly: FreescaleSemiconductorLiteratureDistributionCenter 1--800--441--2447or+1--303--675--2140 FreescaletandtheFreescalelogoaretrademarksofFreescaleSemiconductor,Inc. Fax:+1--303--675--2150 Allotherproductorservicenamesarethepropertyoftheirrespectiveowners. LDCForFreescaleSemiconductor@hibbertgroup.com ©FreescaleSemiconductor,Inc.2007--2008,2010.Allrightsreserved. MRF6V2150NR1MRF6V2150NBR1 DocumentNumber:MRF6V2150N RFDeviceData 1R8ev.4,4/2010 FreescaleSemiconductor

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: N XP: MRF6V2150NBR1 MRF6V2150NR1 MRF6V2150NBR5