Freescale Semiconductor DocumentNumber:MRF6V10010N Technical Data Rev.3,7/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF6V10010NR4 RFPowertransistordesignedforapplicationsoperatingatfrequencies between960and1400MHz,1%to20%dutycycle.Thisdeviceissuitablefor useinpulsedapplications. • TypicalPulsedPerformance:VDD=50Volts,IDQ=10mA,Pout=10Watts Peak(2WAvg.),f=1090MHz,PulseWidth=100μsec,DutyCycle=20% PowerGain(cid:151)25dB 1090MHz,10W,50V DrainEfficiency(cid:151)69% PULSED Features LATERALN--CHANNEL • CharacterizedwithSeriesEquivalentLarge--SignalImpedanceParameters RFPOWERMOSFET • QualifiedUptoaMaximumof50VDDOperation • IntegratedESDProtection • GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation • RoHSCompliant • InTapeandReel.R4Suffix=100Unitsper12mm,7inchReel. CASE466--03,STYLE1 PLD--1.5 PLASTIC Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage VDSS --0.5,+100 Vdc Gate--SourceVoltage VGS --6.0,+10 Vdc StorageTemperatureRange Tstg --65to+150 °C CaseOperatingTemperature TC 150 °C OperatingJunctionTemperature TJ 200 °C Table2.ThermalCharacteristics Characteristic Symbol Value(1,2) Unit ThermalResistance,JunctiontoCase CaseTemperature79°C,10WPulsed,100μsecPulseWidth,20%DutyCycle ZθJC 1.6 °C/W 1. MTTFcalculatoravailableathttp://www.freescale.com/rf.SelectSoftware&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. 2. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. ©FreescaleSemiconductor,Inc.,2008--2010.Allrightsreserved. MRF6V10010NR4 RFDeviceData FreescaleSemiconductor 1

Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 1C(Minimum) MachineModel(perEIA/JESD22--A115) A(Minimum) ChargeDeviceModel(perJESD22--C101) IV(Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 °C Table5.ElectricalCharacteristics (TA=25°Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent IGSS (cid:151) (cid:151) 10 μAdc (VGS=5Vdc,VDS=0Vdc) Drain--SourceBreakdownVoltage V(BR)DSS 100 (cid:151) (cid:151) Vdc (VGS=0Vdc,ID=7mA) ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 50 μAdc (VDS=50Vdc,VGS=0Vdc) ZeroGateVoltageDrainLeakageCurrent IDSS (cid:151) (cid:151) 2.5 mA (VDS=100Vdc,VGS=0Vdc) OnCharacteristics GateThresholdVoltage VGS(th) 1 1.7 2.5 Vdc (VDS=10Vdc,ID=36μAdc) GateQuiescentVoltage VGS(Q) 1.7 2.4 3.2 Vdc (VDD=50Vdc,ID=10mAdc,MeasuredinFunctionalTest) Drain--SourceOn--Voltage VDS(on) (cid:151) 0.2 (cid:151) Vdc (VGS=10Vdc,ID=70mAdc) DynamicCharacteristics ReverseTransferCapacitance Crss (cid:151) 0.1 (cid:151) pF (VDS=50Vdc±30mV(rms)ac@1MHz,VGS=0Vdc) OutputCapacitance Coss (cid:151) 3.38 (cid:151) pF (VDS=50Vdc±30mV(rms)ac@1MHz,VGS=0Vdc) InputCapacitance Ciss (cid:151) 9.55 (cid:151) pF (VDS=50Vdc,VGS=0Vdc±30mV(rms)ac@1MHz) FunctionalTests(InFreescaleTestFixture,50ohmsystem)VDD=50Vdc,IDQ=10mA,Pout=10WPeak(2WAvg.),f=1090MHz, Pulsed,100μsecPulseWidth,20%DutyCycle PowerGain Gps 23 25 28 dB DrainEfficiency ηD 66 69 (cid:151) % InputReturnLoss IRL (cid:151) --12 --8 dB MRF6V10010NR4 RFDeviceData 2 FreescaleSemiconductor

L1 VBIAS VSUPPLY + C9 C8 C7 C13 C2 C3 C12 R1 L2 RF R2 C10 OUTPUT Z8 Z9 Z10 Z11 Z12 RF INPUT Z1 Z2 Z3 C5 Z4 C6 Z5 Z6 Z7 C14 C15 C11 C1 DUT C16 C4 Z1 0.200″x0.080″Microstrip Z8 0.367″x0.320″Microstrip Z2 0.696″x0.120″Microstrip Z9 0.162″x0.320″Microstrip Z3 0.087″x0.320″Microstrip Z10 0.757″x0.080″Microstip Z4 0.323″x0.320″Microstrip Z11 0.763″x0.080″Microstrip Z5 0.320″x0.620″x0.185″Taper Z12 0.290″x0.080″Microstrip Z6 0.135″x0.620″Microstrip PCB ArlonCuClad250GX--0300--55--22,0.030″,εr=2.55 Z7 0.714″x0.620″Microstrip Figure1.MR6V10010NR4TestCircuitSchematic Table6.MR6V10010NR4TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C9,C12 43pFChipCapacitors ATC100B430JT500XT ATC C2 10μF,35VTantalumCapacitor T491D106K035AT Kemet C3,C8 2.2μF,100VChipCapacitors GQM1885C2A2R2CB01B Murata C4,C6 7.5pFChipCapacitors ATC100B7R5CT500XT ATC C5,C16 3.0pFChipCapacitors ATC100B3R0CT500XT ATC C7 0.1μFChipCapacitor C1206C104K5RACTR Kemet C10,C15 0.3pFChipCapacitors ATC100B0R3BT500XT ATC C11 5.6pFChipCapacitor ATC100B5R6CT500XT ATC C13 470μF,63VChipCapacitor 477KXM063M IlllinoisCapacitor C14 47pFChipCapacitor ATC100B470JT500XT ATC L1 8nHInductor A03TKLC Coilcraft L2 5nHInductor A02TKLC Coilcraft R1 3300Ω,1/4WChipResistor CRCW12063301FKEA Vishay R2 10Ω,1/4WChipResistor CRCW120610R0FKEA Vishay MRF6V10010NR4 RFDeviceData FreescaleSemiconductor 3

C7 L1 C3 C13 C2 C8 C12 R1 C9 R2 C16 C4 C15 L2 C14 C1 C5 C10 C6 C11 MRF6V10010N Rev.3 Figure2.MRF6V10010NR4TestCircuitComponentLayout MRF6V10010NR4 RFDeviceData 4 FreescaleSemiconductor

TYPICALCHARACTERISTICS 100 10 Measuredwith±30mV(rms)ac@1MHz VGS=0Vdc S) (pF) 10 Ciss (AMP TJ=200°C NCE ENT 1 TJ=175°C A R T R CAPACI 1 Coss AINCU TJ=150°C C, DR ,D I Crss TC=25°C 0.1 0.1 0 10 20 30 40 50 1 10 100 VDS,DRAIN--SOURCEVOLTAGE(VOLTS) VDS,DRAIN--SOURCEVOLTAGE(VOLTS) Figure3.CapacitanceversusDrain--SourceVoltage Figure4.DCSafeOperatingArea 27 75 45 P3dB=40.66dBm(11.65W) Ideal Gps D E 26 70 S %) UL (dB) CY( m)P P(110d.4B2=W4)0.18dBm WERGAIN 25 ηD 65 EFFICIEN OWER(dB 40 Actual G,POps 24 60 DRAIND, UTPUTP 23 VDD=50Vdc,IDQ=10mA,f=1090MHz 55 η P,Oout VPDulDse=W50idVthdc=,1ID0Q0μ=s1e0cm,DAu,tfy=C1y0c9le0=M2H0z% PulseWidth=100μsec,DutyCycle=20% 22 50 35 5 6 7 8 9 10 11 12 12 13 14 15 16 17 18 19 Pout,OUTPUTPOWER(WATTS)PULSED Pin,INPUTPOWER(dBm)PULSED Figure5.PulsedPowerGainandDrainEfficiency Figure6.PulsedOutputPowerversus versusOutputPower InputPower 27 14 D TC=--30_C E S 12 25 UL P 85_C B) S) 10 d T GAIN( 23 50V R(WAT 8 25_C R E OWE 21 45V POW 6 P 40V T VDD=50Vdc G,ps 35V UTPU 4 IfD=Q1=09100MmHAz 19 IDQ=10mA,f=1090MHz O VDD=30V PDuultsyeCWycidleth==2100%0μsec P,out 2 PDuultsyeCWycidleth==2100%0μsec 17 0 0 2 4 6 8 10 12 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 Pout,OUTPUTPOWER(WATTS)PULSED Pin,INPUTPOWER(WATTS)PULSED Figure7.PulsedPowerGainversus Figure8.PulsedOutputPowerversus OutputPower InputPower MRF6V10010NR4 RFDeviceData FreescaleSemiconductor 5

TYPICALCHARACTERISTICS 29 80 ηD 28 70 %) GAIN(dB) 2276 25_C TC=--30_C 6500 CIENCY( WER 25 40 EFFI G,POps 24 85_C Gps 30 DRAIND, η 23 VDD=50Vdc,IDQ=10mA,f=1090MHz 20 PulseWidth=100μsec,DutyCycle=20% 22 10 0 2 4 6 8 10 12 14 Pout,OUTPUTPOWER(WATTS)PULSED Figure9.PulsedPowerGainandDrainEfficiency versusOutputPower 109 108 S) R U O 107 H ( F T T M 106 105 90 110 130 150 170 190 210 230 250 TJ,JUNCTIONTEMPERATURE(°C) ThisabovegraphdisplayscalculatedMTTFinhourswhenthedevice isoperatedatVDD=50Vdc,Pout=10WPeak,PulseWidth=100μsec, DutyCycle=20%,andηD=69%. MTTFcalculatoravailableathttp://www.freescale.com/rf.Select Software&Tools/DevelopmentTools/CalculatorstoaccessMTTF calculatorsbyproduct. Figure10.MTTFversusJunctionTemperature MRF6V10010NR4 RFDeviceData 6 FreescaleSemiconductor

Zo=50Ω Zload f=1090MHz Zsource f=1090MHz VDD=50Vdc,IDQ=10mA,Pout=10WPeak f Zsource Zload MHz Ω Ω 1090 1.15+j8.96 13.47+j34.32 Zsource = Testcircuitimpedanceasmeasuredfrom gatetoground. Zload = Testcircuitimpedanceasmeasured fromdraintoground. Input Device Output Matching Under Matching Network Test Network Z Z source load Figure11.SeriesEquivalentSourceandLoadImpedance MRF6V10010NR4 RFDeviceData FreescaleSemiconductor 7

PACKAGEDIMENSIONS 0.146 A 3.71 F 0.095 2.41 3 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N 0.35(0.89)X45_ 5_ inches K 10_DRAFT mm SOLDERFOOTPRINT Q U P INCHES MILLIMETERS ZONEV H C DIM MIN MAX MIN MAX Y Y E A 0.255 0.265 6.48 6.73 4 B 0.225 0.235 5.72 5.97 C 0.065 0.072 1.65 1.83 D 0.130 0.150 3.30 3.81 NOTES: E 0.021 0.026 0.53 0.66 1. INTERPRETDIMENSIONSANDTOLERANCES ZONEW PERASMEY14.5M,1984. F 0.026 0.044 0.66 1.12 1 2 2. CONTROLLINGDIMENSION:INCH G 0.050 0.070 1.27 1.78 3. RESINBLEED/FLASHALLOWABLEINZONEV,W, H 0.045 0.063 1.14 1.60 ANDX. J 0.160 0.180 4.06 4.57 K 0.273 0.285 6.93 7.24 STYLE1: L 0.245 0.255 6.22 6.48 PIN1.DRAIN N 0.230 0.240 5.84 6.10 3 2.GATE P 0.000 0.008 0.00 0.20 G S 34..SSOOUURRCCEE QR 00..025050 00..026130 15..4008 15..6303 ZONEX S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31 VIEWY--Y CASE466--03 ZONEV 0.000 0.021 0.00 0.53 ISSUED ZONEW 0.000 0.010 0.00 0.25 ZONEX 0.000 0.010 0.00 0.25 PLD--1.5 PLASTIC MRF6V10010NR4 RFDeviceData 8 FreescaleSemiconductor

PRODUCTDOCUMENTATIONANDSOFTWARE Refertothefollowingdocumentstoaidyourdesignprocess. ApplicationNotes • AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers EngineeringBulletins • EB212:UsingDataSheetImpedancesforRFLDMOSDevices Software • ElectromigrationMTTFCalculator ForSoftware,doaPartNumbersearchathttp://www.freescale.com,andselectthe(cid:147)PartNumber(cid:148)link.GototheSoftware& Toolstabonthepart(cid:146)sProductSummarypagetodownloadtherespectivetool. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 June2008 • InitialReleaseofDataSheet 1 Feb.2009 • CorrectedZsource, (cid:147)2.57--j7.33(cid:148)to(cid:147)1.15+j8.96(cid:148)andZload,(cid:147)14.10--j34.77(cid:148)to(cid:147)13.47+j34.32(cid:148)inFig.11, SeriesEquivalentSourceandLoadImpedancedatatableandreplotteddata,p.7 2 June2009 • ModifieddatasheettoreflectMSLratingchangefrom1to3asaresultofthestandardizationofpacking processasdescribedinProductandProcessChangeNotificationnumber,PCN13516,p.2 • AddedElectromigrationMTTFCalculatoravailabilitytoProductDocumentation,ToolsandSoftware,p.9 3 July2010 • ReportingofpulsedthermaldatanowshownusingtheZθJCsymbol,Table2,ThermalCharacteristics,p.1 • Correctederrorsmadeinthetranslationoftheprintedcircuitboardtotheschematic,Fig.1,TestCircuit SchematicandZlist,p.3 MRF6V10010NR4 RFDeviceData FreescaleSemiconductor 9

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