MRF151G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF151G is a Dual Common Source N-Channel PACKAGE STYLE .385X.850 4LFG Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. MAXIMUM RATINGS I 40 A D V 125 V DSS V ±40 V GS P 500 W @ T = 25 OC DISS C T -65 OC to +200 OC J T -65 OC to +150 OC 1 & 2 = DRAIN 3 & 4 = GATE STG 5 = SOURCE θθθθ 0.35 OC/W JC CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 100 mA 125 V DSS D I V = 50 V V = 0 V 5.0 mA DSS DS GS I V = 0 V V = 20 V 1.0 µµµµA GSS DS GS V I = 100 mA V = 10 V 1.0 5.0 V GS(th) D DS V I = 10 A V = 10 V 5 V DS(on) D GS g I = 5.0 A V = 10 V 5.0 mhos fs D DS C 350 iss Coss VDS = 50 V VGS = 0 V f = 1.0 MHz 250 pF C 15 rss G V = 50 V I = 500 mA P = 300 W 14 16 dB ps DD DQ out ηηηη f = 175 MHz 50 55 % ψψψψ VSWR = 5:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.

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