Freescale Semiconductor Document Number: MRF1517N Technical Data Rev. 7, 6/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF1517NT1 Designed for broadband commercial and industrial applications at frequen- cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. • Specified Performance @ 520 MHz, 7.5 Volts D Output Power (cid:151) 8 Watts Power Gain (cid:151) 14 dB 520 MHz, 8 W, 7.5 V Efficiency (cid:151) 70% LATERAL N-CHANNEL • Capable of Handling 20:1 VSWR, @ 9.5 Vdc, BROADBAND 520 MHz, 2 dB Overdrive RF POWER MOSFET Features • Characterized with Series Equivalent Large-Signal G Impedance Parameters • Excellent Thermal Stability • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, S 7 inch Reel. CASE 466-03, STYLE 1 PLD-1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage (1) VDSS -0.5, +25 Vdc Gate-Source Voltage VGS ±20 Vdc Drain Current (cid:151) Continuous ID 4 Adc Total Device Dissipation @ TC = 25°C (2) PD 62.5 W Derate above 25°C 0.50 W/°C Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature TJ 150 °C Table 2. Thermal Characteristics Characteristic Symbol Value (3) Unit Thermal Resistance, Junction to Case RθJC 2 °C/W Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 °C 1. Not designed for 12.5 volt applications. TJ(cid:150)TC 2. Calculated based on the formula PD = RθJC 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. MRF1517NT1 RF Device Data Freescale Semiconductor 1

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current IDSS (cid:151) (cid:151) 1 μAdc (VDS = 35 Vdc, VGS = 0) Gate-Source Leakage Current IGSS (cid:151) (cid:151) 1 μAdc (VGS = 10 Vdc, VDS = 0) On Characteristics Gate Threshold Voltage VGS(th) 1 1.7 2.1 Vdc (VDS = 7.5 Vdc, ID = 120 μAdc) Drain-Source On-Voltage VDS(on) (cid:151) 0.5 (cid:151) Vdc (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance gfs (cid:151) 0.9 (cid:151) S (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance Ciss (cid:151) 66 (cid:151) pF (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance Coss (cid:151) 38 (cid:151) pF (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance Crss (cid:151) 6 (cid:151) pF (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture) Common-Source Amplifier Power Gain Gps (cid:151) 14 (cid:151) dB (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Drain Efficiency η (cid:151) 70 (cid:151) % (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) MRF1517NT1 RF Device Data 2 Freescale Semiconductor

B2 VGG + B1 + VDD C9 C8 C7 R3 C18 C17 C16 C15 R2 L1 C6 R1 N2 Z6 Z7 Z8 Z9 Z10 RF N1 DUT C14 OUTPUT RF Z1 Z2 Z3 Z4 Z5 C10 C12 C13 INPUT C11 C1 C2 C3 C4 C5 B1, B2 Short Ferrite Beads, Fair Rite Products R1 15 Ω, 0805 Chip Resistor (2743021446) R2 1.0 kΩ, 1/8 W Resistor C1 300 pF, 100 mil Chip Capacitor R3 33 kΩ, 1/2 W Resistor C2, C3, C4, C10, Z1 0.315″ x 0.080″ Microstrip C12, C13 0 to 20 pF, Trimmer Capacitors Z2 1.415″ x 0.080″ Microstrip C5, C11 43 pF, 100 mil Chip Capacitors Z3 0.322″ x 0.080″ Microstrip C6, C18 120 pF, 100 mil Chip Capacitors Z4 0.022″ x 0.080″ Microstrip C7, C15 10 μF, 50 V Electrolytic Capacitors Z5, Z6 0.260″ x 0.223″ Microstrip C8, C16 0.1 μF, 100 mil Chip Capacitors Z7 0.050″ x 0.080″ Microstrip C9, C17 1,000 pF, 100 mil Chip Capacitors Z8 0.625″ x 0.080″ Microstrip C14 330 pF, 100 mil Chip Capacitor Z9 0.800″ x 0.080″ Microstrip L1 55.5 nH, 5 Turn, Coilcraft Z10 0.589″ x 0.080″ Microstrip ® N1, N2 Type N Flange Mounts Board Glass Teflon , 31 mils, 2 oz. Copper Figure 1. 480 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 480 - 520 MHz 10 0 500 MHz 520 MHz WATTS) 8 480 MHz SS (dB) −5 WER ( 6 RN LO −10 480 MHz O U P T T E 520 MHz PU 4 T R −15 UT PU 500 MHz O N , Pout 2 IRL, I −20 VDD = 7.5 Vdc VDD = 7.5 Vdc 0 −25 0 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Input Return Loss versus Output Power MRF1517NT1 RF Device Data Freescale Semiconductor 3

TYPICAL CHARACTERISTICS, 480 - 520 MHz 18 80 500 MHz 480 MHz 70 16 480 MHz %) 520 MHz Y ( 60 14 C N N (dB) 12 FFICIE 50 500 MHz GAI N E 40 520 MHz AI 10 R D 30 Eff, 8 20 VDD = 7.5 Vdc VDD = 7.5 Vdc 6 10 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 11 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 4. Gain versus Output Power Figure 5. Drain Efficiency versus Output Power 12 80 TTS) 10 500 MHz %) 70 480 MHz ER (WA 8 520 MHz 480 MHz ENCY ( 60 500 MHz W CI PO 6 FFI 520 MHz T E UTPU 4 RAIN 50 O D , Pout 2 Pin = 27 dBm Eff, 40 Pin = 27 dBm VDD = 7.5 Vdc VDD = 7.5 Vdc 0 30 0 200 400 600 800 1000 0 200 400 600 800 1000 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 12 80 TTS) 10 %) 70 480 MHz WA 500 MHz Y ( R ( 8 NC 500 MHz WE 520 MHz CIE 60 PO 6 FFI 520 MHz T 480 MHz E UTPU 4 RAIN 50 O D , Pout 2 Pin = 27 dBm Eff, 40 Pin = 27 dBm IDQ = 150 mA IDQ = 150 mA 0 30 5 6 7 8 9 10 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Drain Efficiency versus Supply Voltage MRF1517NT1 RF Device Data 4 Freescale Semiconductor

VGG B2 + B1 + VDD C8 C7 C6 R3 R2 C17 C16 C15 C14 L1 C5 R1 Z5 Z6 Z7 Z8 Z9 N2 RF DUT OUTPUT N1 C13 RF Z1 Z2 Z3 Z4 C10 C11 C12 INPUT C9 C1 C2 C3 C4 B1, B2 Short Ferrite Beads, Fair Rite Products R1 12 Ω, 0805 Chip Resistor (2743021446) R2 1.0 kΩ, 1/8 W Resistor C1, C13 300 pF, 100 mil Chip Capacitors R3 33 kΩ, 1/2 W Resistor C2, C3, C4, C10, Z1 0.617″ x 0.080″ Microstrip C11, C12 0 to 20 pF, Trimmer Capacitors Z2 0.723″ x 0.080″ Microstrip C5, C17 130 pF, 100 mil Chip Capacitors Z3 0.513″ x 0.080″ Microstrip C6, C14 10 μF, 50 V Electrolytic Capacitors Z4, Z5 0.260″ x 0.223″ Microstrip C7, C15 0.1 μF, 100 mil Chip Capacitors Z6 0.048″ x 0.080″ Microstrip C8, C16 1,000 pF, 100 mil Chip Capacitors Z7 0.577″ x 0.080″ Microstrip C9 33 pF, 100 mil Chip Capacitor Z8 1.135″ x 0.080″ Microstrip L1 55.5 nH, 5 Turn, Coilcraft Z9 0.076″ x 0.080″ Microstrip ® N1, N2 Type N Flange Mounts Board Glass Teflon , 31 mils, 2 oz. Copper Figure 10. 400 - 440 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 440 MHz 10 0 9 WATTS) 78 420 MHz 400 MHz SS (dB) −5 WER ( 6 440 MHz RN LO −10 400 MHz PO 5 TU 420 MHz T E TPU 4 UT R −15 440 MHz OU 3 NP , Pout 2 IRL, I −20 1 VDD = 7.5 Vdc VDD = 7.5 Vdc 0 −25 0 0.1 0.2 0.3 0.4 0.5 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MRF1517NT1 RF Device Data Freescale Semiconductor 5

TYPICAL CHARACTERISTICS, 400 - 440 MHz 17 70 420 MHz 60 440 MHz 15 %) 420 MHz 400 MHz 440 MHz Y ( 50 13 C N N (dB) 11 FFICIE 40 400 MHz GAI N E 30 AI 9 R D 20 Eff, 7 10 VDD = 7.5 Vdc VDD = 7.5 Vdc 5 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 11 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 13. Gain versus Output Power Figure 14. Drain Efficiency versus Output Power 12 80 TTS) 10 400 MHz420 MHz %) 70 WA 440 MHz Y ( 440 MHz R ( 8 NC E E 60 W CI 420 MHz PO 6 FFI TPUT AIN E 50 400 MHz U 4 R O D , Pout 2 Pin = 25.5 dBm Eff, 40 Pin = 25.5 dBm VDD = 7.5 Vdc VDD = 7.5 Vdc 0 30 0 200 400 600 800 1000 0 200 400 600 800 1000 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current 12 80 420 MHz TS) 10 400 MHz 70 AT %) R (W 8 CY ( 420 MHz WE 440 MHz EN 60 O CI P 6 FI 440 MHz PUT N EF 50 400 MHz UT 4 AI O R , Pout 2 Pin = 25.5 dBm Eff, D 40 Pin = 25.5 dBm IDQ = 150 mA IDQ = 150 mA 0 30 5 6 7 8 9 10 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage Figure 18. Drain Efficiency versus Supply Voltage MRF1517NT1 RF Device Data 6 Freescale Semiconductor

B2 VGG + B1 + VDD C8 C7 C6 R3 R2 C17 C16 C15 C14 L1 C5 R1 N2 Z5 Z6 Z7 Z8 Z9 RF DUT OUTPUT N1 C13 Z1 Z2 Z3 Z4 RF C10 C11 C12 INPUT C9 C1 C2 C3 C4 B1, B2 Short Ferrite Beads, Fair Rite Products R1 15 Ω, 0805 Chip Resistor (2743021446) R2 1.0 kΩ, 1/8 W Resistor C1 240 pF, 100 mil Chip Capacitor R3 33 kΩ, 1/2 W Resistor C2, C3, C4, C10, Z1 0.471″ x 0.080″ Microstrip C11, C12 0 to 20 pF, Trimmer Capacitors Z2 1.082″ x 0.080″ Microstrip C5, C17 130 pF, 100 mil Chip Capacitors Z3 0.372″ x 0.080″ Microstrip C6, C14 10 mF, 50 V Electrolytic Capacitors Z4, Z5 0.260″ x 0.223″ Microstrip C7, C15 0.1 mF, 100 mil Chip Capacitors Z6 0.050″ x 0.080″ Microstrip C8, C16 1,000 pF, 100 mil Chip Capacitors Z7 0.551″ x 0.080″ Microstrip C9 39 pF, 100 mil Chip Capacitor Z8 0.825″ x 0.080″ Microstrip C13 330 pF, 100 mil Chip Capacitor Z9 0.489″ x 0.080″ Microstrip ® L1 55.5 nH, 5 Turn, Coilcraft Board Glass Teflon , 31 mils, 2 oz. Copper N1, N2 Type N Flange Mounts Figure 19. 440 - 480 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 440 - 480 MHz 10 0 9 WATTS) 78 440 MHz SS (dB) −5 WER ( 6 RN LO −10 460 MHz PO 5 460 MHz TU T E 440 MHz PU 4 480 MHz T R −15 T U OU 3 NP 480 MHz , Pout 2 IRL, I −20 1 VDD = 7.5 Vdc VDD = 7.5 Vdc 0 −25 0.0 0.2 0.4 0.6 0.8 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power MRF1517NT1 RF Device Data Freescale Semiconductor 7

TYPICAL CHARACTERISTICS, 440 - 480 MHz 17 70 440 MHz 60 460 MHz 15 460 MHz %) 480 MHz Y ( 50 13 C N 440 MHz N (dB) 11 480 MHz FFICIE 40 GAI N E 30 AI 9 R D 20 Eff, 7 10 VDD = 7.5 Vdc VDD = 7.5 Vdc 5 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10 11 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 22. Gain versus Output Power Figure 23. Drain Efficiency versus Output Power 12 80 TTS) 10 440 MHz %) 70 R (WA 8 480 MHz NCY ( 480 MHz E E 60 W 460 MHz CI 460 MHz PO 6 FFI TPUT AIN E 50 440 MHz OU 4 DR , Pout Eff, 40 2 Pin = 27.5 dBm Pin = 27.5 dBm 0 30 0 200 400 600 800 1000 0 200 400 600 800 1000 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 24. Output Power versus Biasing Current Figure 25. Drain Efficiency versus Biasing Current 12 80 S) 10 TT %) 70 R (WA 8 440 MHz NCY ( 480 MHz WE 460 MHz CIE 60 460 MHz PO 6 480 MHz FFI UT N E 440 MHz TP AI 50 U 4 R O D , ut Eff, Po 2 40 Pin = 27.5 dBm Pin = 27.5 dBm 0 30 5 6 7 8 9 10 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage Figure 27. Drain Efficiency versus Supply Voltage MRF1517NT1 RF Device Data 8 Freescale Semiconductor

TYPICAL CHARACTERISTICS 109 2S) P M A X 108 S R U O H R ( O CT 107 A F F T T M 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 28. MTTF Factor versus Junction Temperature MRF1517NT1 RF Device Data Freescale Semiconductor 9

Zin f = 440 MHz f = 440 MHz 520 Zin 480 400 Zin f = 480 MHz 520 f = 480 MHz ZOL* 440 f = 440 MHz ZOL* f = 480 MHz ZOL* 400 Zo = 10 Ω Zo = 10 Ω Zo = 10 Ω VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f Zin ZOL* f Zin ZOL* f Zin ZOL* MHz Ω Ω MHz Ω Ω MHz Ω Ω 480 1.06 +j1.82 3.51 +j0.99 440 1.62 +j3.41 3.25 +j0.98 400 1.96 +j3.32 2.52 +j0.39 500 0.97 +j2.01 2.82 +j0.75 460 1.85 +j3.35 3.05 +j0.93 420 2.31 +j3.56 2.61 +j0.64 520 0.975 +j2.37 1.87 +j1.03 480 1.91 +j3.31 2.54 +j0.84 440 1.60 +j3.45 2.37 +j1.04 Zin = Complex conjugate of source Zin = Complex conjugate of source Zin = Complex conjugate of source impedance. impedance. impedance. ZOL* = Complex conjugate of the load ZOL* = Complex conjugate of the load ZOL* = Complex conjugate of the load impedance at given output impedance at given output impedance at given output power, voltage, frequency, power, voltage, frequency, power, voltage, frequency, and ηD > 50 %. and ηD > 50 %. and ηD > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Device Output Matching Under Test Matching Network Network Z Z * in OL Figure 29. Series Equivalent Input and Output Impedance MRF1517NT1 RF Device Data 10 Freescale Semiconductor

Table 5. Common Source Scattering Parameters (V = 7.5 Vdc) DD I = 150 mA DQ f S11 S21 S12 S22 MMHHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.84 -152 17.66 97 0.016 0 0.77 -167 100 0.84 -164 8.86 85 0.016 5 0.78 -172 200 0.86 -170 4.17 72 0.015 -5 0.79 -173 300 0.88 -171 2.54 62 0.014 -8 0.80 -172 400 0.90 -172 1.72 55 0.013 -25 0.83 -172 500 0.92 -172 1.28 50 0.013 -10 0.84 -172 600 0.94 -173 0.98 46 0.014 -22 0.86 -171 700 0.95 -173 0.76 41 0.010 -30 0.86 -172 800 0.96 -174 0.61 38 0.011 -14 0.86 -171 900 0.96 -175 0.50 33 0.011 -31 0.85 -172 1000 0.97 -175 0.40 31 0.006 55 0.88 -171 I = 800 mA DQ f S11 S21 S12 S22 MMHHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.90 -165 20.42 94 0.018 1 0.76 -164 100 0.89 -172 10.20 87 0.015 -7 0.77 -170 200 0.90 -175 4.96 79 0.015 -12 0.77 -172 300 0.90 -176 3.17 73 0.017 -2 0.80 -171 400 0.91 -176 2.26 67 0.013 1 0.82 -172 500 0.92 -176 1.75 63 0.011 -6 0.83 -171 600 0.93 -176 1.39 59 0.012 -31 0.85 -171 700 0.94 -176 1.14 55 0.015 -34 0.88 -171 800 0.94 -176 0.93 51 0.008 -22 0.87 -171 900 0.95 -177 0.78 45 0.007 2 0.87 -172 1000 0.96 -177 0.65 43 0.008 -40 0.90 -170 I = 1.5 A DQ f S11 S21 S12 S22 MMHHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 50 0.92 -165 19.90 95 0.017 3 0.76 -164 100 0.90 -172 9.93 88 0.018 2 0.77 -170 200 0.91 -176 4.84 80 0.016 -4 0.77 -172 300 0.91 -176 3.10 74 0.014 -11 0.80 -172 400 0.92 -176 2.22 68 0.014 -14 0.81 -172 500 0.93 -176 1.73 64 0.016 -8 0.83 -171 600 0.94 -176 1.39 61 0.013 -24 0.85 -171 700 0.94 -176 1.12 56 0.013 -24 0.87 -171 800 0.95 -176 0.93 52 0.009 -12 0.87 -171 900 0.96 -177 0.78 46 0.008 10 0.87 -173 1000 0.97 -177 0.64 44 0.012 4 0.89 -169 MRF1517NT1 RF Device Data Freescale Semiconductor 11

APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel drain-source voltage under these conditions is termed enhancement mode, Lateral Metal-Oxide Semiconductor V . For MOSFETs, V has a positive temperature DS(on) DS(on) Field-Effect Transistor (MOSFET). Freescale Application coefficient at high temperatures because it contributes to the Note AN211A, (cid:147)FETs in Theory and Practice(cid:148), is suggested power dissipation within the device. reading for those not familiar with the construction and char- BV values for this device are higher than normally re- DSS acteristics of FETs. quired for typical applications. Measurement of BV is not DSS This surface mount packaged device was designed pri- recommended and may result in possible damage to the de- marily for VHF and UHF portable power amplifier applica- vice. tions. Manufacturability is improved by utilizing the tape and GATE CHARACTERISTICS reel capability for fully automated pick and placement of The gate of the RF MOSFET is a polysilicon material, and parts. However, care should be taken in the design process is electrically isolated from the source by a layer of oxide. to insure proper heat sinking of the device. The DC input resistance is very high - on the order of 109 Ω The major advantages of Lateral RF power MOSFETs in- (cid:151) resulting in a leakage current of a few nanoamperes. clude high gain, simple bias systems, relative immunity from Gate control is achieved by applying a positive voltage to thermal runaway, and the ability to withstand severely mis- the gate greater than the gate-to-source threshold voltage, matched loads without suffering damage. V . GS(th) MOSFET CAPACITANCES Gate Voltage Rating (cid:151) Never exceed the gate voltage The physical structure of a MOSFET results in capacitors rating. Exceeding the rated VGS can result in permanent between all three terminals. The metal oxide gate structure damage to the oxide layer in the gate region. determines the capacitors from gate-to-drain (C ), and Gate Termination (cid:151) The gates of these devices are es- gd gate-to-source (C ). The PN junction formed during fab- sentially capacitors. Circuits that leave the gate open-cir- gs rication of the RF MOSFET results in a junction capacitance cuited or floating should be avoided. These conditions can from drain-to-source (C ). These capacitances are charac- result in turn-on of the devices due to voltage build-up on ds terized as input (C ), output (C ) and reverse transfer the input capacitor due to leakage currents or pickup. iss oss (Crss) capacitances on data sheets. The relationships be- Gate Protection (cid:151) These devices do not have an internal tween the inter-terminal capacitances and those given on monolithic zener diode from gate-to-source. If gate protec- data sheets are shown below. The C can be specified in tion is required, an external zener diode is recommended. iss two ways: Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important 1. Drain shorted to source and positive voltage at the gate. function. Voltage transients on the drain can be coupled to 2. Positive voltage of the drain in respect to source and zero the gate through the parasitic gate-drain capacitance. If the volts at the gate. gate-to-source impedance and the rate of voltage change In the latter case, the numbers are lower. However, neither on the drain are both high, then the signal coupled to the gate method represents the actual operating conditions in RF ap- may be large enough to exceed the gate-threshold voltage plications. and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain cur- Drain rent flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent Cgd drain current (I ), whose value is application dependent. DQ This device was characterized at I = 150 mA, which is the Gate Ciss = Cgd + Cgs DQ suggested value of bias current for typical applications. For Cds Coss = Cgd + Cds Crss = Cgd special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. Cgs The gate is a dc open circuit and draws no current. There- fore, the gate bias circuit may generally be just a simple re- Source sistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL DRAIN CHARACTERISTICS Power output of this device may be controlled to some de- One critical figure of merit for a FET is its static resistance gree with a low power dc control signal applied to the gate, in the full-on condition. This on-resistance, R , occurs thus facilitating applications such as manual gain control, DS(on) in the linear region of the output characteristic and is speci- ALC/AGC and modulation systems. This characteristic is fied at a specific gate-source voltage and drain current. The very dependent on frequency and load line. MRF1517NT1 RF Device Data 12 Freescale Semiconductor

MOUNTING The specified maximum thermal resistance of 2°C/W as- Large-signal impedances are provided, and will yield a good sumes a majority of the 0.065″ x 0.180″ source contact on first pass approximation. the back side of the package is in good contact with an ap- Since RF power MOSFETs are triode devices, they are not propriate heat sink. As with all RF power devices, the goal of unilateral. This coupled with the very high gain of this device the thermal design should be to minimize the temperature at yields a device capable of self oscillation. Stability may be the back side of the package. Refer to Freescale Application achieved by techniques such as drain loading, input shunt Note AN4005/D, (cid:147)Thermal Management and Mounting Meth- resistive loading, or output to input feedback. The RF test fix- od for the PLD-1.5 RF Power Surface Mount Package,(cid:148) and ture implements a parallel resistor and capacitor in series Engineering Bulletin EB209/D, (cid:147)Mounting Method for RF with the gate, and has a load line selected for a higher effi- Power Leadless Surface Mount Transistor(cid:148) for additional in- ciency, lower gain, and more stable operating region. formation. Two-port stability analysis with this device(cid:146)s AMPLIFIER DESIGN S-parameters provides a useful tool for selection of loading Impedance matching networks similar to those used with or feedback circuitry to assure stable operation. See Free- bipolar transistors are suitable for this device. For examples scale Application Note AN215A, (cid:147)RF Small-Signal Design see Freescale Application Note AN721, (cid:147)Impedance Using Two-Port Parameters(cid:148) for a discussion of two port Matching Networks Applied to RF Power Transistors.(cid:148) network theory and stability. MRF1517NT1 RF Device Data Freescale Semiconductor 13

PACKAGE DIMENSIONS 0.146 A 3.71 F 0.095 2.41 3 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N 0.35 (0.89) X 45(cid:2) (cid:2) 5(cid:2) inches K 10(cid:2) DRAFT mm SOLDER FOOTPRINT Q U P INCHES MILLIMETERS H DIM MIN MAX MIN MAX ZONE V ÉÉÉÉ4ÉÉÉÉ C Y Y E AB 00..225255 00..226355 65..4782 65..7937 C 0.065 0.072 1.65 1.83 ÉÉÉÉÉÉÉÉ NOTES: DE 00..103201 00..105206 30..3503 30..8616 ZONE W 1ÉÉÉÉÉÉÉÉ2 12.. IPCNEOTRNE TRARSPOMRLEELT YI ND1G4IM. 5DEMINM, SE1I9NO8SN4IS.O NA:N IDN CTHOLERANCES GF 00..002560 00..004740 01..6267 11..1728 ÉÉÉÉÉÉÉÉ 3. RANESDI NX .BLEED/FLASH ALLOWABLE IN ZONE V, W, HJ 00..014650 00..016830 14..1046 14..6507 K 0.273 0.285 6.93 7.24 ÉÉÉÉÉÉÉÉ STYLE 1: L 0.245 0.255 6.22 6.48 PIN 1.DRAIN N 0.230 0.240 5.84 6.10 3 2.GATE P 0.000 0.008 0.00 0.20 G S 34..SSOOUURRCCEE QR 00..025050 00..026130 15..4008 15..6303 ZONE X S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31 VIEW Y-Y CASE 466-03 ZONE V 0.000 0.021 0.00 0.53 ISSUE D ZONE W 0.000 0.010 0.00 0.25 ZONE X 0.000 0.010 0.00 0.25 PLD-1.5 PLASTIC MRF1517NT1 RF Device Data 14 Freescale Semiconductor

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN211A: Field Effect Transistors in Theory and Practice • AN215A: RF Small-Signal Design Using Two-Port Parameters • AN721: Impedance Matching Networks Applied to RF Power Transistors • AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the (cid:147)Part Number(cid:148) link. Go to the Software & Tools tab on the part(cid:146)s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 6 June 2008 • Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance values in the functional test table on p. 2 • Added Product Documentation and Revision History, p. 15 7 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 • Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 15 MRF1517NT1 RF Device Data Freescale Semiconductor 15

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Information in this document is provided solely to enable system and software Technical Information Center implementers to use Freescale Semiconductor products. There are no express or Schatzbogen 7 81829 Muenchen, Germany implied copyright licenses granted hereunder to design or fabricate any integrated +44 1296 380 456 (English) circuits or integrated circuits based on the information in this document. +46 8 52200080 (English) +49 89 92103 559 (German) Freescale Semiconductor reserves the right to make changes without further notice to +33 1 69 35 48 48 (French) any products herein. Freescale Semiconductor makes no warranty, representation or www.freescale.com/support guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of Japan: any product or circuit, and specifically disclaims any and all liability, including without Freescale Semiconductor Japan Ltd. Headquarters limitation consequential or incidental damages. (cid:147)Typical(cid:148) parameters that may be ARCO Tower 15F provided in Freescale Semiconductor data sheets and/or specifications can and do 1-8-1, Shimo-Meguro, Meguro-ku, vary in different applications and actual performance may vary over time. All operating Tokyo 153-0064 parameters, including (cid:147)Typicals(cid:148), must be validated for each customer application by Japan customer(cid:146)s technical experts. Freescale Semiconductor does not convey any license 0120 191014 or +81 3 5437 9125 under its patent rights nor the rights of others. Freescale Semiconductor products are support.japan@freescale.com not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, Asia/Pacific: Freescale Semiconductor China Ltd. or for any other application in which the failure of the Freescale Semiconductor product Exchange Building 23F could create a situation where personal injury or death may occur. Should Buyer No. 118 Jianguo Road purchase or use Freescale Semiconductor products for any such unintended or Chaoyang District unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor Beijing 100022 and its officers, employees, subsidiaries, affiliates, and distributors harmless against all China claims, costs, damages, and expenses, and reasonable attorney fees arising out of, +86 10 5879 8000 directly or indirectly, any claim of personal injury or death associated with such support.asia@freescale.com unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Freescale(cid:3) and the Freescale logo are trademarks of Freescale Semiconductor, Inc. Fax: +1-303-675-2150 All other product or service names are the property of their respective owners. LDCForFreescaleSemiconductor@hibbertgroup.com © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale(cid:146)s Environmental Products program, go to http://www.freescale.com/epp. MRF1517NT1 Document Number: MRF1517N RF Device Data 1R6ev. 7, 6/2009 Freescale Semiconductor

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