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MPX2100DP产品简介:
ICGOO电子元器件商城为您提供MPX2100DP由Freescale Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MPX2100DP价格参考。Freescale SemiconductorMPX2100DP封装/规格:压力传感器,变送器, 差分 压力 传感器 14.5 PSI(100 kPa) 公型 - 0.19"(4.93mm) 双管 0 mV ~ 40 mV(10V) 4-SIP 模块。您可以下载MPX2100DP参考资料、Datasheet数据手册功能说明书,资料中有MPX2100DP 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | SENSOR DIFF PRESSURE 14.5 PSI MA板机接口压力传感器 PRES SEN COMP 100KPA |
产品分类 | |
品牌 | Freescale Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 板机接口压力传感器,Freescale Semiconductor MPX2100DPMPX2100 |
数据手册 | |
产品型号 | MPX2100DP |
产品目录绘图 | |
产品目录页面 | |
产品种类 | 板机接口压力传感器 |
出厂设置 | - |
单位重量 | 5.058 g |
压力类型 | Differential |
商标 | Freescale Semiconductor |
安装风格 | Through Hole |
封装 | Tray |
封装/外壳 | 4-SIP 模块 |
封装/箱体 | Unibody 4-pin |
工作压力 | 14.5 psi |
工作温度 | -40°C ~ 125°C |
工作电源电压 | 10 V |
工厂包装数量 | 100 |
最大工作温度 | + 125 C |
最小工作温度 | - 40 C |
标准包装 | 400 |
电压-电源 | 10 V |
端口大小 | 4.93 mm |
端口尺寸 | 公型,0.194"(4.9276mm)双管 |
端口类型 | Dual Radial Barbed |
端子类型 | PCB |
精度 | ±0.25%FSS |
系列 | MPXx2100 |
输出 | 0 mV ~ 40 mV |
Pressure Freescale Semiconductor MPX2100 Rev 10, 10/2008 +100 kPa On-Chip Temperature MPX2100 Compensated and Calibrated Series Silicon Pressure Sensors 0 to 100 kPa (0 to 14.5 psi) The MPX2100 series devices silicon piezoresistive pressure sensors 40 mV Full Scale Span providing a highly accurate and linear voltage output directly proportional to (Typical) the applied pressure. The sensor is a single, monolithic silicon diaphragm with the strain gauge and a thin-film resistor network integrated on-chip. The chip is laser trimmed for precise span and offset calibration an Application Examples temperature compensation. Features • Pump/Motor Controllers • Robotics • Temperature Compensated Over 0°C to +85°C • Level Indicators • Available in Absolute, Differential and Gauge Configurations • Medical Diagnostics • Easy to Use Chip Carrier Package Options • Pressure Switching • Ratiometric to Supply Voltage • Barometers • ±0.25% Linearity (MPX2100D Series) ORDERING INFORMATION Package Case # of Ports Pressure Type Device Device Name Options No. None Single Dual Gauge Differential Absolute Marking Unibody Package (MPX2100 Series) MPX2100A Tray 344 • • MPX2100A MPX2100D Tray 344 • • MPX2100D MPX2100AP Tray 344B • • MPX2100AP MPX2100GP Tray 344B • • MPX2100GP MPX2100DP Tray 344C • • MPX2100DP MPX2100GVP Tray 344D • • MPX2100GVP MPX2100ASX Tray 344F • • MPX2100A PACKAGES MPX2100A/D MPX2100AP/GP MPX2100DP MPX2100GVP MPX2100ASX CASE 344-15 CASE 344B-01 CASE 344C-01 CASE 344D-01 CASE 344F-01 © Freescale Semiconductor, Inc., 2002, 2008. All rights reserved.
Pressure Figure1 shows a block diagram of the internal circuitry on the stand-alone pressure sensor chip. VS 3 Thin Film Temperature 2 +V Sensing Compensation OUT Element andC Ciracluibitrraytion 4 -VOUT 1 GND Figure1. Temperature Compensated Pressure Sensor Schematic Voltage Output versus Applied Differential Pressure The differential voltage output of the sensor is directly proportional to the differential pressure applied. The absolute sensor has a built-in reference vacuum. The output voltage will decrease as vacuum, relative to ambient, is drawn on the pressure (P1) side. The output voltage of the differential or gauge sensor increases with increasing pressure applied to the pressure side (P1) relative to the vacuum side (P2). Similarly, output voltage increases as increasing vacuum is applied to the vacuum side (P2) relative to the pressure side (P1). MPX2100 Sensors 2 Freescale Semiconductor
Pressure Operating Characteristics Table1. Operating Characteristics (VS = 10 Vdc, TA = 25°C unless otherwise noted, P1 > P2) Characteristics Symbol Min Typ Max Unit Pressure Range(1) POP 0 — 100 kPa Supply Voltage(2) VS — 10 16 Vdc Supply Current I — 6.0 — mAdc o Full Scale Span(3) VFSS 38.5 40 41.5 mV Offset(4) MPX2100D Series Voff -1.0 — 1.0 mV MPX2100A Series -2.0 — 2.0 Sensitivity ΔV/ΔP — 0.4 — mV/kPa Linearity(5) MPX2100D Series — -0.25 — 0.25 %VFSS MPX2100A Series — -1.0 — 1.0 Pressure Hysteresis(5) (0 to 100 kPa) — — ±0.1 — %VFSS Temperature Hysteresis(5) (-40°C to +125°C) — — ±0.5 — %VFSS Temperature Effect on Full Scale Span(5) TCVFSS -1.0 — 1.0 %VFSS Temperature Effect on Offset(5) TCVoff -1.0 — 1.0 mV Input Impedance Zin 1000 — 2500 Ω Output Impedance Zout 1400 — 3000 Ω Response Time(6) (10% to 90%) tR — 1.0 — ms Warm-Up — — 20 — ms Offset Stability(7) — — ±0.5 — %VFSS 1. 1.0 kPa (kiloPascal) equals 0.145 psi. 2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional error due to device self-heating. 3. Full Scale Span (V ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the FSS minimum rated pressure. 4. Offset (V ) is defined as the output voltage at the minimum rated pressure. off 5. Accuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure, using end point method, over the specified pressure range. Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure, at 25°C. TcSpan: Output deviation at full rated pressure over the temperature range of 0 to 85°C, relative to 25°C. TcOffset: Output deviation with minimum rated pressure applied, over the temperature range of 0 to 85°C, relative to 25°C. 6. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. 7. Offset stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test. MPX2100 Sensors Freescale Semiconductor 3
Pressure Maximum Ratings Table2. Maximum Ratings(1) Rating Symbol Value Unit Maximum Pressure (P1 > P2) P 400 kPa max Storage Temperature Tstg -40 to +125 °C Operating Temperature TA -40 to +125 °C 1. Exposure beyond the specified limits may cause permanent damage or degradation to the device. LINEARITY Linearity refers to how well a transducer's output follows the equation: V = V + sensitivity x P over the operating out off Least Squares Fit pressure range. There are two basic methods for calculating nonlinearity: (1) end point straight line fit (see Figure2) or (2) Exaggerated a least squares best line fit. While a least squares fit gives the Performance ut Curve “best case” linearity error (lower numerical value), the p Straight Line calculations required are burdensome. Out Least Deviation Conversely, an end point fit will give the “worst case” error ge DeSvqiautaiorne a (often more desirable in error budget calculations) and the olt calculations are more straightforward for the user. Motorola's e V specified pressure sensor linearities are based on the end ativ End Point point straight line method measured at the midrange Rel Straight Line Fit pressure. Offset 0 50 100 Pressure (% Fullscale) Figure2. Linearity Specification Comparison MPX2100 Sensors 4 Freescale Semiconductor
Pressure On-Chip Temperature Compensation and Calibration Figure3 shows the output characteristics of the The effects of temperature on Full-Scale Span and Offset MPX2100 series at 25°C. The output is directly proportional are very small and are shown under Operating to the differential pressure and is essentially a straight line. Characteristics. 40 VS = 10 Vdc 35 TA = 25°C P1 > P2 c) 30 TYP d V 25 Span m MAX ut ( 20 Range utp 15 (Typ) O 10 MIN 5 0 -5 Offset kPa 0 25 50 75 100 (Typ) PSI 3.62 7.25 10.87 14.5 Figure3. Output versus Pressure Differential Differential/Gauge Absolute DSiileic Conoea tGel Die P1 SMteatianll eCsosv Setreel SDiileic oCnoea tGel Die P1 MSteatianll eCsosv SetreelEpoxy Epoxy Case Wire Bond Case Wire Bond Lead Frame Bond Lead Frame Differential/Gauge Element Die Absolute Element Die P2 P2 Bond Figure4. Cross-Sectional Diagram (not to scale) Figure4 illustrates the absolute sensing configuration The MPX2100 series pressure sensor operating (right) and the differential or gauge configuration in the basic characteristics and internal reliability and qualification tests chip carrier (Case 344). A silicone gel isolates the die surface are based on use of dry air as the pressure media. Media and wire bonds from the environment, while allowing the other than dry air may have adverse effects on sensor pressure signal to be transmitted to the silicon diaphragm. performance and long term reliability. Contact the factory for information regarding media compatibility in your application. MPX2100 Sensors Freescale Semiconductor 5
Pressure PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE Freescale designates the two sides of the pressure sensor applied, P1 > P2. The absolute sensor is designed for as the Pressure (P1) side and the Vacuum (P2) side. The vacuum applied to P1 side. Pressure (P1) side is the side containing the silicone gel The Pressure (P1) side may be identified by using the which isolates the die. The differential or gauge sensor is table below: designed to operate with positive differential pressure Part Number Case Type Pressure (P1) Side Identifier MPX2100A, MPX2100D 344 Stainless Steel Cap MPX2100DP 344C Side with Part Marking MPX2100AP, MPX2100GP 344B Side with Port Attached MPX2100ASX 344F Side with Port Attached MPX2100GVP 344D Stainless Steel Cap MPX2100 Sensors 6 Freescale Semiconductor
Pressure PACKAGE DIMENSIONS C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME R Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION -A- IS INCLUSIVE OF THE MOLD M STOP RING. MOLD STOP RING NOT TO EXCEED Z 16.00 (0.630). 1 4 B -A- 2 3 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.595 0.630 15.11 16.00 N B 0.514 0.534 13.06 13.56 PIN 1 1 2 3 4 L C 0.200 0.220 5.08 5.59 D 0.016 0.020 0.41 0.51 -T- F 0.048 0.064 1.22 1.63 SEATING G 0.100 BSC 2.54 BSC PLANE F J 0.014 0.016 0.36 0.40 J G L 0.695 0.725 17.65 18.42 F Y M 30˚ NOM 30˚ NOM D4 PL N 0.475 0.495 12.07 12.57 0.136 (0.005) M T A M DAMBAR TRIM ZONE: R 0.430 0.450 10.92 11.43 THIS IS INCLUDED Y 0.048 0.052 1.22 1.32 WITHIN DIM. "F" 8 PL Z 0.106 0.118 2.68 3.00 STYLE 1: STYLE 2: STYLE 3: PIN 1. GROUND PIN 1. VCC PIN 1. GND 2. + OUTPUT 2. - SUPPLY 2. -VOUT 3. + SUPPLY 3. + SUPPLY 3. VS 4. - OUTPUT 4. GROUND 4. +VOUT CASE 344-15 ISSUE AA UNIBODY PACKAGE NOTES: SEATING -T- -A- 1. DIMENSIONING AND TOLERANCING PER ANSI PLANE U Y14.5M, 1982. R L 2. CONTROLLING DIMENSION: INCH. H INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1.145 1.175 29.08 29.85 N B 0.685 0.715 17.40 18.16 PORT #1 -Q- C 0.305 0.325 7.75 8.26 POSITIVE PRESSURE D 0.016 0.020 0.41 0.51 (P1) F 0.048 0.064 1.22 1.63 G 0.100 BSC 2.54 BSC B H 0.182 0.194 4.62 4.93 J 0.014 0.016 0.36 0.41 K 0.695 0.725 17.65 18.42 1 2 3 4 L 0.290 0.300 7.37 7.62 PIN 1 K N 0.420 0.440 10.67 11.18 -P- P 0.153 0.159 3.89 4.04 0.25 (0.010) M T Q S S QR 00..125330 00..125590 35..8894 46..0345 J F US 0.202.0910 B0S.2C40 5.2539.11 BS6C.10 C G D4 PL 0.13 (0.005) M T S S Q S STYLE 1: PIN 1. GROUND 2. + OUTPUT 3. + SUPPLY 4. - OUTPUT CASE 344B-01 ISSUE B UNIBODY PACKAGE MPX2100 Sensors Freescale Semiconductor 7
Pressure PACKAGE DIMENSIONS -A- NOTES: V U 1. DY1IM4.E5NMS, I1O9N8I2N.G AND TOLERANCING PER ANSI R PORT #1 W L 2. CONTROLLING DIMENSION: INCH. H INCHES MILLIMETERS PORT #2 PORT #2 PORT #1 DIM MIN MAX MIN MAX N V(PA2C)UUM (PPO1S)ITIVE PRESSURE AB 10..164855 10..177155 2197..0480 2198..8156 -Q- C 0.405 0.435 10.29 11.05 D 0.016 0.020 0.41 0.51 F 0.048 0.064 1.22 1.63 SEATING B SEATING G 0.100 BSC 2.54 BSC PLANE PLANE H 0.182 0.194 4.62 4.93 J 0.014 0.016 0.36 0.41 PIN 1 1 2 3 4 K 0.695 0.725 17.65 18.42 K -P- L 0.290 0.300 7.37 7.62 N 0.420 0.440 10.67 11.18 -T- -T- 0.25 (0.010)M T Q S S P 0.153 0.159 3.89 4.04 Q 0.153 0.159 3.89 4.04 J F R 0.063 0.083 1.60 2.11 C G S 0.220 0.240 5.59 6.10 D4 PL U 0.910 BSC 23.11 BSC V 0.248 0.278 6.30 7.06 0.13 (0.005) M T S S Q S W 0.310 0.330 7.87 8.38 STYLE 1: PIN 1. GROUND CASE 344C-01 2. + OUTPUT 3. + SUPPLY ISSUE B 4. - OUTPUT UNIBODY PACKAGE -T- NOTES: C A 1. DIMENSIONING AND TOLERANCING PER ANSI -Q- Y14.5M, 1982. E U 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1.080 1.120 27.43 28.45 B 0.740 0.760 18.80 19.30 C 0.630 0.650 16.00 16.51 N D 0.016 0.020 0.41 0.51 V B E 0.160 0.180 4.06 4.57 F 0.048 0.064 1.22 1.63 R G 0.100 BSC 2.54 BSC J 0.014 0.016 0.36 0.41 PORT #1 PIN 1 K 0.220 0.240 5.59 6.10 POSITIVE -P- N 0.070 0.080 1.78 2.03 PRESSURE P 0.150 0.160 3.81 4.06 (P1) 0.25 (0.010) M T Q M 4 3 2 1 S Q 0.150 0.160 3.81 4.06 R 0.440 0.460 11.18 11.68 S 0.695 0.725 17.65 18.42 K U 0.840 0.860 21.34 21.84 V 0.182 0.194 4.62 4.92 J F G D4 PL STYPLINE 11.: GROUND 0.13 (0.005) M T P S Q S 2. V (+) OUT 3. V SUPPLY 4. V (-) OUT CASE 344F-01 ISSUE B UNIBODY PACKAGE MPX2100 Sensors 8 Freescale Semiconductor
Pressure PACKAGE DIMENSIONS NOTES: -A- 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. U 2. CONTROLLING DIMENSION: INCH. -T- SPELAATNIENG L INCHES MILLIMETERS DIM MIN MAX MIN MAX R PORT #2 H A 1.145 1.175 29.08 29.85 VACUUM POSITIVE B 0.685 0.715 17.40 18.16 (P2) PRESSURE C 0.305 0.325 7.75 8.26 N (P1) D 0.016 0.020 0.41 0.51 F 0.048 0.064 1.22 1.63 -Q- G 0.100 BSC 2.54 BSC H 0.182 0.194 4.62 4.93 J 0.014 0.016 0.36 0.41 K 0.695 0.725 17.65 18.42 B L 0.290 0.300 7.37 7.62 N 0.420 0.440 10.67 11.18 P 0.153 0.159 3.89 4.04 1 2 3 4 K Q 0.153 0.158 3.89 4.04 R 0.230 0.250 5.84 6.35 PIN 1 S 0.220 0.240 5.59 6.10 S U 0.910 BSC 23.11 BSC C F -P- G J 0.25 (0.010) M T Q S D 4 PL STYLE 1: PIN 1. GROUND 0.13 (0.005) M T S S Q S 2. + OUTPUT 3. + SUPPLY 4. - OUTPUT CASE 344D-01 ISSUE B UNIBODY PACKAGE MPX2100 Sensors Freescale Semiconductor 9
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