MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP www.centralsemi.com COMPLEMENTARY DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR MPSA05, MPSA55 series devices are complementary silicon transistors designed for low power output and medium power driver applications. MARKING: FULL PART NUMBER TO-92 CASE MPSA05 MPSA06 MAXIMUM RATINGS: (TA=25°C) SYMBOL MPSA55 MPSA56 UNITS Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 4.0 V Continuous Collector Current IC 500 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 200 °C/W Thermal Resistance JC 83.3 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=Rated VCBO 100 nA ICES VCE=60V 100 nA BVCEO IC=1.0mA (MPSA05, 55) 60 V BVCEO IC=1.0mA (MPSA06, 56) 80 V BVEBO IE=100μA 4.0 V VCE(SAT) IC=100mA, IB=10mA 0.25 V VBE(ON) VCE=1.0V, IC=100mA 1.2 V hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 fT VCE=2.0V, IC=10mA, f=100MHz (NPN) 100 MHz fT VCE=1.0V, IC=100mA, f=100MHz (PNP) 50 MHz R8 (7-December 2015)

MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP COMPLEMENTARY SILICON TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER TYPICAL ELECTRICAL CHARACTERISTICS R8 (7-December 2015) www.centralsemi.com

MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP COMPLEMENTARY SILICON TRANSISTORS NPN TYPICAL ELECTRICAL CHARACTERISTICS R8 (7-December 2015) www.centralsemi.com

MPSA05 MPSA06 NPN MPSA55 MPSA56 PNP COMPLEMENTARY SILICON TRANSISTORS PNP TYPICAL ELECTRICAL CHARACTERISTICS R8 (7-December 2015) www.centralsemi.com

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