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  • 型号: MPSA42RLRMG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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MPSA42RLRMG产品简介:

ICGOO电子元器件商城为您提供MPSA42RLRMG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MPSA42RLRMG价格参考。ON SemiconductorMPSA42RLRMG封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 300V 500mA 50MHz 625mW 通孔 TO-92-3。您可以下载MPSA42RLRMG参考资料、Datasheet数据手册功能说明书,资料中有MPSA42RLRMG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS NPN GP LP 500MA 300V TO-92两极晶体管 - BJT 500mA 300V NPN

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ON Semiconductor MPSA42RLRMG-

数据手册

点击此处下载产品Datasheet

产品型号

MPSA42RLRMG

不同 Ib、Ic时的 Vce饱和值(最大值)

500mV @ 2mA,20mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

40 @ 30mA,10V

产品种类

两极晶体管 - BJT

供应商器件封装

TO-92-3

其它名称

MPSA42RLRMGOSCT

功率-最大值

625mW

包装

剪切带 (CT)

发射极-基极电压VEBO

6 V

商标

ON Semiconductor

增益带宽产品fT

50 MHz

安装类型

通孔

安装风格

Through Hole

封装

Ammo Pack

封装/外壳

TO-226-3、TO-92-3(TO-226AA)成形引线

封装/箱体

TO-92-3 (TO-226)

工厂包装数量

2000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

625 mW

最大工作温度

+ 150 C

最大直流电集电极电流

0.5 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

300V

电流-集电极(Ic)(最大值)

500mA

电流-集电极截止(最大值)

-

直流集电极/BaseGainhfeMin

25

系列

MPSA42

配置

Single

集电极—发射极最大电压VCEO

300 V

集电极—基极电压VCBO

300 V

集电极—射极饱和电压

0.5 V

集电极连续电流

0.5 A

频率-跃迁

50MHz

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PDF Datasheet 数据手册内容提取

MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc MPSA43 200 1 MPSA42 300 EMITTER Collector−Base Voltage VCBO Vdc MPSA43 200 MPSA42 300 Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation PD TO−92 @De rTaAt e= a2b5o°vCe 25°C 652.05 mmWW/°C 12 1 2 C(TAOS−E2 2269A−A11) 3 3 Total Device Dissipation PD STRAIGHT LEAD BENT LEAD @ TC = 25°C 1.5 W Derate above 25°C 12 mW/°C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg −55 to °C Temperature Range +150 MPS A4x THERMAL CHARACTERISTICS AYWW(cid:2) Characteristic Symbol Max Unit (cid:2) Thermal Resistance, R(cid:2)JA 200 °C/W Junction−to−Ambient Thermal Resistance, R(cid:2)JC 83.3 °C/W x = 2 or 3 Junction−to−Case A = Assembly Location Y = Year Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended WW = Work Week Operating Conditions is not implied. Extended exposure to stresses above the (cid:2) = Pb−Free Package Recommended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2013 − Rev. 8 MPSA42/D

MPSA42, MPSA43 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MPSA42 300 − MPSA43 200 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) MPSA42 300 − MPSA43 200 − Emitter−Base Breakdown Voltage V(BR)EBO 6.0 − Vdc (IE = 100 (cid:3)Adc, IC = 0) Collector Cutoff Current ICBO (cid:3)Adc (VCB = 200 Vdc, IE = 0) MPSA42 − 0.1 (VCB = 160 Vdc, IE = 0) MPSA43 − 0.1 Emitter Cutoff Current IEBO (cid:3)Adc (VEB = 6.0 Vdc, IC = 0) MPSA42 − 0.1 (VEB = 4.0 Vdc, IC = 0) MPSA43 − 0.1 ON CHARACTERISTICS (Note 1) DC Current Gain hFE − (IC = 1.0 mAdc, VCE = 10 Vdc) 25 − (IC = 10 mAdc, VCE = 10 Vdc) 40 − (IC = 30 mAdc, VCE = 10 Vdc) 40 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 20 mAdc, IB = 2.0 mAdc) MPSA42 − 0.5 MPSA43 − 0.4 Base−Emitter Saturation Voltage VBE(sat) − 0.9 Vdc (IC = 20 mAdc, IB = 2.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 50 − MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector−Base Capacitance Ccb pF (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MPSA42 − 3.0 MPSA43 − 4.0 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. http://onsemi.com 2

MPSA42, MPSA43 ORDERING INFORMATION Device Package Shipping† MPSA42G TO−92 5000 Units / Box (Pb−Free) MPSA42RL1G TO−92 2000 / Tape & Reel (Pb−Free) MPSA42RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPSA42RLRMG TO−92 2000 / Ammo Pack (Pb−Free) MPSA42RLRPG TO−92 2000 / Ammo Pack (Pb−Free) MPSA42ZL1G TO−92 2000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3

MPSA42, MPSA43 120 VCE = 10 Vdc 100 TJ = +125°C N AI G 80 T N RE 25°C R 60 U C C D , FE 40 -55°C h 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 Ceb @ 1MHz F) p 10 E ( C N A T CI A P A C, C 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Capacitance 1.4 1.2 VCE(sat) @ 25°C, IC/IB = 10 LTS) 1.0 VVCCEE((ssaatt)) @@ 1-5255°°CC,, IICC//IIBB == 1100 GE (VO 0.8 VVBBEE((ssaatt)) @@ 2152°5C°C, I,C IC/IB/I B= = 1 010 A OLT 0.6 VBE(sat) @ -55°C, IC/IB = 10 V, V 0.4 VVBBEE((oonn)) @@ 2152°5C°C, V, VCCE E= = 1 01 0V V 0.2 VBE(on) @ -55°C, VCE = 10 V 0.0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages http://onsemi.com 4

MPSA42, MPSA43 100 1 H VCE = 2 V DT TA = 25°C A) WI T ( NDz) REN 10 ms AIN−BAUT (MH10 R CUR 0.1 1.0 s GC O −D T TO C NR E REP LL R O U C , CT I, C f 1 0.01 0.1 1 10 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 4. Current−Gain−Bandwidth Product Figure 5. Safe Operating Area http://onsemi.com 5

MPSA42, MPSA43 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AN A NOTES: B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 H J K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X−X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR R A B BENT LEAD N1O.TEDSIM:ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T MILLIMETERS SPELAATNIENG K DIM MIN MAX A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 X X D G 2.40 2.80 G J 0.39 0.50 K 12.70 --- J N 2.04 2.66 V P 1.50 4.00 C R 2.93 --- V 3.43 --- SECTION X−X 1 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MPSA42/D 6