ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > MPSA42
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MPSA42产品简介:
ICGOO电子元器件商城为您提供MPSA42由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MPSA42价格参考¥0.31-¥0.56。Central SemiconductorMPSA42封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 300V 500mA 50MHz 625mW 通孔 TO-92-3。您可以下载MPSA42参考资料、Datasheet数据手册功能说明书,资料中有MPSA42 详细功能的应用电路图电压和使用方法及教程。
ON Semiconductor的MPSA42是一款NPN型硅功率晶体管,属于双极晶体管(BJT)类别。它具有低饱和电压、高增益和快速开关特性,适用于多种电子电路中。以下是MPSA42的一些典型应用场景: 1. 电源管理:MPSA42常用于线性稳压器和开关电源中,作为开关元件或驱动元件。它的低饱和电压特性使得它在电源管理应用中能够减少功耗,提高效率。 2. 音频放大器:在音频设备中,MPSA42可以作为前置放大级或输出级的一部分,提供稳定的电流放大功能。其高增益特性有助于提升信号的强度,确保音频信号的清晰传输。 3. 电机控制:在小型电机控制系统中,MPSA42可以用作驱动晶体管,控制电机的启动、停止和速度调节。其快速开关特性有助于实现精确的电机控制,同时保持较低的能耗。 4. 传感器接口:MPSA42可用于传感器信号的放大和处理,特别是在需要将微弱的传感器信号转换为更强电信号的应用中。它可以与各种类型的传感器配合使用,如温度传感器、压力传感器等。 5. 继电器驱动:在需要驱动继电器的应用中,MPSA42可以作为一个高效的开关元件,控制继电器的通断状态。它的高耐压能力使其能够在较高电压环境下稳定工作。 6. 保护电路:MPSA42还可以用于过流保护和短路保护电路中,通过检测异常电流并迅速切断电路,保护其他敏感元件免受损坏。 7. 通信设备:在一些低频通信设备中,MPSA42可以用作信号放大和调制解调的关键组件,确保信号的稳定传输和接收。 总之,MPSA42因其优异的电气性能和广泛的适用性,在许多领域都得到了广泛应用。选择合适的应用场景时,应根据具体需求和技术参数进行评估,以确保最佳性能。
参数 | 数值 |
品牌 | Central Semiconductor |
产品目录 | 半导体 |
描述 | 两极晶体管 - BJT NPN Gen Pur SS |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | 过渡期间 |
产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor MPSA42 |
产品型号 | MPSA42 |
产品种类 | 两极晶体管 - BJT |
发射极-基极电压VEBO | 6 V |
商标 | Central Semiconductor |
增益带宽产品fT | 50 MHz |
安装风格 | Through Hole |
封装 | Bulk |
封装/箱体 | TO-92 |
工厂包装数量 | 2500 |
晶体管极性 | NPN |
最大功率耗散 | 625 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.5 A |
最小工作温度 | - 65 C |
直流集电极/BaseGainhfeMin | 25 |
系列 | MPSA42 |
配置 | Single |
集电极—发射极最大电压VCEO | 300 V |
集电极—基极电压VCBO | 300 V |
集电极—射极饱和电压 | 0.5 V |
集电极连续电流 | 500 mA |
MPSA42 MPSA43 www.centralsemi.com SILICON DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR MPSA42 and NPN TRANSISTORS MPSA43 are silicon NPN transistors designed for high voltage applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL MPSA42 MPSA43 UNITS Collector-Base Voltage VCBO 300 200 V Collector-Emitter Voltage VCEO 300 200 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 500 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.5 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 83.3 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) MPSA42 MPSA43 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=200V - 100 - - nA ICBO VCB=160V - - - 100 nA IEBO VEB=6.0V - 100 - - nA IEBO VEB=4.0V - - - 100 nA BVCBO IC=100μA 300 - 200 - V BVCEO IC=1.0mA 300 - 200 - V BVEBO IE=100μA 6.0 - 6.0 - V VCE(SAT) IC=20mA, IB=2.0mA - 0.50 - 0.40 V VBE(SAT) IC=20mA, IB=2.0mA - 0.90 - 0.90 V hFE VCE=10V, IC=1.0mA 25 - 25 - hFE VCE=10V, IC=10mA 40 - 40 - hFE VCE=10V, IC=30mA 40 - 50 200 fT VCE=20V, IC=10mA, f=100MHz 50 - 50 - MHz Cob VCB=20V, IE=0, f=1.0MHz - 3.0 - 4.0 pF R2 (26-March 2015)
MPSA42 MPSA43 SILICON HIGH VOLTAGE NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (26-March 2015) www.centralsemi.com
MPSA42 MPSA43 SILICON HIGH VOLTAGE NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R2 (26-March 2015) www.centralsemi.com
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