MPSA28, MPSA29 MPSA29isaPreferredDevice Darlington Transistors NPN Silicon Features • Pb--FreePackagesareAvailable* http://onsemi.com COLLECTOR3 MAXIMUMRATINGS BASE Rating Symbol Value Unit 2 Collector--EmitterVoltage MPSA28 VCES 80 Vdc MPSA29 100 Collector--BaseVoltage MPSA28 VCBO 80 Vdc MPSA29 100 EMITTER1 Emitter--BaseVoltage VEBO 12 Vdc CollectorCurrent--Continuous IC 500 mAdc TO--92 TotalDeviceDissipation@TA=25°C PD 625 mW Derateabove25°C 5.0 mW/°C CASE29 STYLE1 TotalDeviceDissipation@TC=25°C PD 1.5 W Derateabove25°C 12 mW/°C 1 12 2 OperatingandStorageJunction TJ,Tstg --55to+150 °C 3 3 TemperatureRange STRAIGHTLEAD BENTLEAD BULKPACK TAPE&REEL THERMALCHARACTERISTICS AMMOPACK Characteristic Symbol Max Unit MARKINGDIAGRAM ThermalResistance,Junction--to--Ambient RθJA 200 °C/W ThermalResistance,Junction--to--Case RθJC 83.3 °C/W MPS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not A2x normaloperatingconditions)andarenotvalidsimultaneously.Iftheselimitsare AYWWG exceeded,devicefunctionaloperationisnotimplied,damagemayoccurand G reliabilitymaybeaffected. x =8or9 A =AssemblyLocation Y =Year WW =WorkWeek G =Pb--FreePackage (Note:Microdotmaybeineitherlocation) ORDERINGINFORMATION Device Package Shipping MPSA28RLRPG TO--92 2000/AmmoPack (Pb--Free) MPSA29G TO--92 5000Units/Bulk (Pb--Free) MPSA29RLRP TO--92 2000/AmmoPack MPSA29RLRPG TO--92 2000/AmmoPack (Pb--Free) *ForadditionalinformationonourPb--Freestrategyandsolderingdetails,please download the ON Semiconductor Soldering and Mounting Techniques Preferreddevicesarerecommendedchoicesforfutureuse ReferenceManual,SOLDERRM/D. andbestoverallvalue. © SemiconductorComponentsIndustries,LLC,2007 1 PublicationOrderNumber: April,2007--Rev.3 MPSA28/D

MPSA28, MPSA29 ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisenoted) Characteristic Symbol Min Typ Max Unit OFFCHARACTERISTICS Collector--EmitterBreakdownVoltage V(BR)CES Vdc (IC=100mAdc,VBE=0) MPSA28 80 -- -- MPSA29 100 -- -- Collector--BaseBreakdownVoltage V(BR)CBO Vdc (IC=100mAdc,IE=0) MPSA28 80 -- -- MPSA29 100 -- -- Emitter--BaseBreakdownVoltage V(BR)EBO 12 -- -- Vdc (IE=10mAdc,IC=0) CollectorCutoffCurrent ICBO nAdc (VCB=60Vdc,IE=0) MPSA28 -- -- 100 (VCB=80Vdc,IE=0) MPSA29 -- -- 100 CollectorCutoffCurrent ICES nAdc (VCE=60Vdc,VBE=0) MPSA28 -- -- 500 (VCE=80Vdc,VBE=0) MPSA29 -- -- 500 EmitterCutoffCurrent IEBO -- -- 100 nAdc (VEB=10Vdc,IC=0) ONCHARACTERISTICS(Note1) DCCurrentGain hFE -- (IC=10mAdc,VCE=5.0Vdc) 10,000 -- -- (IC=100mAdc,VCE=5.0Vdc) 10,000 -- -- Collector--EmitterSaturationVoltage VCE(sat) Vdc (IC=10mAdc,IB=0.01mAdc) -- 0.7 1.2 (IC=100mAdc,IB=0.1mAdc) -- 0.8 1.5 Base--EmitterOnVoltage VBE(on) -- 1.4 2.0 Vdc (IC=100mAdc,VCE=5.0Vdc) SMALL--SIGNALCHARACTERISTICS Current--Gain--BandwidthProduct(Note2) fT 125 200 -- MHz (IC=10mAdc,VCE=5.0Vdc,f=100MHz) OutputCapacitance Cobo -- 5.0 8.0 pF (VCB=10Vdc,IE=0,f=1.0MHz) 1. PulseTest:PulseWidth≤300ms,DutyCycle≤2.0%. 2. fT=hfeSftest. http://onsemi.com 2

MPSA28, MPSA29 VCE=5.0V 1.8 GAIN(k) 210000 TA=125°C LTS) 1.6 TA=25°C VBE(S)@IC/IB=1.0k T O RREN 50 TA=25°C GE(V 1.4 VBE(ON)@VCE=5.0V CU 20 TA=--55°C LTA 1.2 DC 10 VO ,E V, 1.0 F 5.0 h VCE(S)@IC/IB=1.0k 0.8 2.0 1.0 0.6 1.0 2.0 5.0 10 20 50 100 200 500 1k 1.0 2.0 5.0 10 20 50 100 200 500 1k IC,COLLECTORCURRENT(mA) IC,COLLECTORCURRENT(mA) Figure1.DCCurrentGain Figure2.“ON”Voltages 0 2.4 (mV/C)° --1.0 25°Cto125°C OLTS) 2.0 TA=25°C T V CIEN θVCforVCE(S) --55°Cto25°C GE( IC=500mA FI --2.0 TA 1.6 F L E O O V C R RE --3.0 TO 1.2 IC=250mA TU 25°Cto125°C EC IC=10mA IC=100mA A L R L E --55°Cto25°C O TEMP --4.0 θVBforVBE ,CCE 0.8 V, V θ --5.0 0.4 1.0 2.0 5.0 10 20 50 100 200 500 0.2 1.0 2.0 10 20 100 200 1k1.5k IC,COLLECTORCURRENT(mA) IB,BASECURRENT(mA) Figure3.TemperatureCoefficients Figure4.CollectorSaturationRegion 1k 10 N AI 500 G 5.0 mA) 1.0ms 100ms NT VCE=5.0V NT( 1.0s RRE TA=25°C E 200 U 2.0 f=100MHz R C UR TA=25°C TC=25°C CY C 100 N 1.0 R E O U T Q C E E 50 CURRENTLIMIT R 0.5 L F ,COLIC 20 TSHECEROMNADLBLRIMEAITKDOWNLIMMITPSA28 ,HIGHe 0.2 VALIDFORDUTYCYCLE≤10% MPSA29 hf 10 0.1 1.0 2.0 5.0 10 20 50 100 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300 VCE,COLLECTOR--EMITTERVOLTAGE(VOLTS) IC,COLLECTORCURRENT(mA) Figure5.ActiveRegion -- SafeOperatingArea Figure6.HighFrequencyCurrentGain http://onsemi.com 3

MPSA28, MPSA29 PACKAGEDIMENSIONS TO--92(TO--226) CASE29--11 ISSUEAM A NOTES: B STRAIGHTLEAD 1. DIMENSIONINGANDTOLERANCINGPERANSI BULKPACK Y14.5M,1982. 2. CONTROLLINGDIMENSION:INCH. R 3. CONTOUROFPACKAGEBEYONDDIMENSIONR ISUNCONTROLLED. 4. LEADDIMENSIONISUNCONTROLLEDINPAND P BEYONDDIMENSIONKMINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 H J K 0.500 ------ 12.70 ------ L 0.250 ------ 6.35 ------ V C N 0.080 0.105 2.04 2.66 P ------ 0.100 ------ 2.54 SECTIONX--X R 0.115 ------ 2.93 ------ 1 N V 0.135 ------ 3.43 ------ N R A B BENTLEAD N1O.TEDSIM:ENSIONINGANDTOLERANCINGPER TAPE&REEL ASMEY14.5M,1994. 2. CONTROLLINGDIMENSION:MILLIMETERS. AMMOPACK 3. CONTOUROFPACKAGEBEYOND DIMENSIONRISUNCONTROLLED. 4. LEADDIMENSIONISUNCONTROLLEDINP P ANDBEYONDDIMENSIONKMINIMUM. T SEATING K MILLIMETERS PLANE DIM MIN MAX A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 X X D D 0.40 0.54 G 2.40 2.80 G J 0.39 0.50 J K 12.70 ------ N 2.04 2.66 V C P 1.50 4.00 R 2.93 ------ SECTIONX--X V 3.43 ------ 1 N STYLE1: PIN1. EMITTER 2. BASE 3. COLLECTOR ONSemiconductorand areregisteredtrademarksofSemiconductorComponentsIndustries,LLC(SCILLC).SCILLCreservestherighttomakechangeswithoutfurthernotice toanyproductsherein.SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesSCILLCassumeanyliability arisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages. “Typical”parameterswhichmaybeprovidedinSCILLCdatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. All operatingparameters,including“Typicals”mustbevalidatedforeachcustomerapplicationbycustomer’stechnicalexperts.SCILLCdoesnotconveyanylicenseunderitspatentrights northerightsofothers.SCILLCproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,orotherapplications intendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheSCILLCproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. Should BuyerpurchaseoruseSCILLCproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdSCILLCanditsofficers,employees,subsidiaries,affiliates, anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeath associatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatSCILLCwasnegligentregardingthedesignormanufactureofthepart. SCILLCisanEqual Opportunity/AffirmativeActionEmployer. Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner. PUBLICATIONORDERINGINFORMATION LITERATUREFULFILLMENT: N.AmericanTechnicalSupport:800--282--9855TollFree ONSemiconductorWebsite:www.onsemi.com LiteratureDistributionCenterforONSemiconductor USA/Canada P.O.Box5163,Denver,Colorado80217USA Europe,MiddleEastandAfricaTechnicalSupport: OrderLiterature:http://www.onsemi.com/orderlit Phone:303--675--2175or800--344--3860TollFreeUSA/Canada Phone:421337902910 Fax:303--675--2176or800--344--3867TollFreeUSA/Canada JapanCustomerFocusCenter Foradditionalinformation,pleasecontactyourlocal Email:orderlit@onsemi.com Phone:81--3--5773--3850 SalesRepresentative http://onsemi.com MPSA28/D 4