ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > MPSA05RLRMG
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MPSA05RLRMG产品简介:
ICGOO电子元器件商城为您提供MPSA05RLRMG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MPSA05RLRMG价格参考¥0.72-¥0.72。ON SemiconductorMPSA05RLRMG封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 60V 500mA 100MHz 625mW 通孔 TO-92-3。您可以下载MPSA05RLRMG参考资料、Datasheet数据手册功能说明书,资料中有MPSA05RLRMG 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS NPN GP BIPO LP 60V TO-92两极晶体管 - BJT 500mA 60V NPN |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,ON Semiconductor MPSA05RLRMG- |
数据手册 | |
产品型号 | MPSA05RLRMG |
不同 Ib、Ic时的 Vce饱和值(最大值) | 250mV @ 10mA,100mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 100 @ 100mA,1V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | TO-92-3 |
其它名称 | MPSA05RLRMGOSCT |
功率-最大值 | 625mW |
包装 | 剪切带 (CT) |
发射极-基极电压VEBO | 4 V |
商标 | ON Semiconductor |
增益带宽产品fT | 100 MHz |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Ammo Pack |
封装/外壳 | TO-226-3、TO-92-3(TO-226AA)成形引线 |
封装/箱体 | TO-92-3 (TO-226) |
工厂包装数量 | 2000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 625 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.5 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 60V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | 100nA |
直流集电极/BaseGainhfeMin | 100 |
系列 | MPSA05 |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 60 V |
集电极—射极饱和电压 | 0.25 V |
集电极连续电流 | 0.5 A |
频率-跃迁 | 100MHz |
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* *Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com Features NPN PNP • Pb−Free Packages are Available* COLLECTOR COLLECTOR 3 3 MAXIMUM RATINGS 2 2 BASE BASE Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc 1 1 MPSA05, MPSA55 60 EMITTER EMITTER MPSA06, MPSA56 80 Collector−Base Voltage VCBO Vdc MPSA05, MPSA55 60 MPSA06, MPSA56 80 Emitter−Base Voltage VEBO 4.0 Vdc TO−92 Collector Current − Continuous IC 500 mAdc CASE 29 STYLE 1 Total Device Dissipation @ TA = 25°C PD 625 W Derate above 25°C 5.0 mW/°C 1 TDoetraal tDe eavbioceve D 2is5s°iCpation @ TC = 25°C PD 11.25 mWW/°C 123 2 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg −55 to +150 °C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resistance, Junction−to−Ambient R(cid:2)JA 200 °C/W (Note 1) Thermal Resistance, Junction−to−Case R(cid:2)JC 83.3 °C/W MPS Stresses exceeding Maximum Ratings may damage the device. Maximum Axx Ratings are stress ratings only. Functional operation above the Recommended AYWW(cid:2) Operating Conditions is not implied. Extended exposure to stresses above the (cid:2) Recommended Operating Conditions may affect device reliability. 1. R(cid:2)JA is measured with the device soldered into a typical printed circuit board. xx = 05, 06, 55, or 56 A = Assembly Location Y = Year WW = Work Week (cid:2) = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: April, 2007 − Rev. 3 MPSA05/D
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MPSA05, MPSA55 60 − MPSA06, MPSA56 80 − Emitter−Base Breakdown Voltage V(BR)EBO 4.0 − Vdc (IE = 100 (cid:3)Adc, IC = 0) Collector Cutoff Current ICES − 0.1 (cid:3)Adc (VCE = 60 Vdc, IB = 0) Collector Cutoff Current ICBO (cid:3)Adc (VCB = 60 Vdc, IE = 0) MPSA05, MPSA55 − 0.1 (VCB = 80 Vdc, IE = 0) MPSA06, MPSA56 − 0.1 ON CHARACTERISTICS DC Current Gain hFE − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 − (IC = 100 mAdc, VCE = 1.0 Vdc) 100 − Collector−Emitter Saturation Voltage VCE(sat) − 0.25 Vdc (IC = 100 mAdc, IB = 10 mAdc) Base−Emitter On Voltage VBE(on) − 1.2 Vdc (IC = 100 mAdc, VCE = 1.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 3) fT MHz (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) MPSA05 100 − MPSA06 (IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz) MPSA55 50 − MPSA56 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN−ON TIME TURN−OFF TIME −1.0 V VCC +VBB VCC +40 V +40 V 5.0 (cid:3)s 100 R 100 R L L +10 V OUTPUT OUTPUT V R V R in B in B 0 tr = 3.0 ns 5.0 (cid:3)F * CS (cid:3) 6.0 pF 5.0 (cid:3)F * CS (cid:3) 6.0 pF 100 100 5.0 (cid:3)s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* NPN PNP z) 300 z) 200 H H M M DUCT ( 200 VTJC E= =2 52°.C0 V DUCT ( VTJC E= =2 5−°2C.0 V O O R R P P 100 H H T T D D WI WI 70 D 100 D N N A A B B 50 − 70 − N N AI AI G G − 50 − T T 30 N N E E R R R R CU 30 CU 20 , T 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 , T −2.0 −3.0 −5.0−7.0 −10 −20 −30 −50 −70 −100 −200 f f I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 2. MPSA05/06 Current−Gain — Figure 3. MPSA55/56 Current−Gain — Bandwidth Product Bandwidth Product 80 100 60 TJ = 25°C 70 TJ = 25°C 40 50 C ibo F) F) E (p Cibo E (p 30 NC 20 NC A A T T 20 CI CI A A P P A A C 10 C C, 8.0 C, 10 Cobo 6.0 Cobo 7.0 4.0 5.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 V , REVERSE VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) R R Figure 4. MPSA05/06 Capacitance Figure 5. MPSA55/56 Capacitance 1.0 k 1.0 k 700 700 500 500 ts ts 300 300 200 200 s) s) n n E ( 100 E ( 100 M M t, TI 70 tf t, TI 70 tf 50 50 VCC = 40 V VCC = −40 V 30 IC/IB = 10 tr 30 IC/IB = 10 20 IB1 = IB2 20 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0.5 V TJ = 25°C td @ VBE(off) = −0.5 V tr 10 10 5.0 7.0 10 20 30 50 70 100 200 300 500 −5.0−7.0 −10 −20 −30 −50 −70 −100 −200 −300 −500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 6. MPSA05/06 Switching Time Figure 7. MPSA55/56 Switching Time http://onsemi.com 3
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* NPN PNP 1.0 k −1.0 k 700 100 (cid:3)s −700 100 (cid:3)s 500 1.0 ms −500 1.0 ms A) A) T (m 300 1.0 s T (m −300 1.0 s EN 200 TC = 25°C EN −200 TC = 25°C RR TA = 25°C RR TA = 25°C U U C 100 C −100 R R O 70 O −70 T T EC 50 CURRENT LIMIT EC −50 CURRENT LIMIT L L L THERMAL LIMIT L THERMAL LIMIT CO 30 SECOND BREAKDOWN LIMIT CO −30 SECOND BREAKDOWN LIMIT , C 20 , C −20 I MPSA05 I MPSA55 MPSA06 MPSA56 10 −10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −2.0 −3.0 −5.0−7.0 −10 −20 −30 −50 −70 −100 V , COLLECTOR−EMITTER VOLTAGE (VOLTS) V , COLLECTOR−EMITTER VOLTAGE (VOLTS) CE CE Figure 8. MPSA05/06 Active−Region Safe Figure 9. MPSA55/56 Active−Region Safe Operating Area Operating Area 400 400 T = 125°C T = 125°C J J VCE = 1.0 V VCE = −1.0 V N 200 N 200 AI 25°C AI 25°C G G T T N N E −55°C E RR RR −55°C U 100 U 100 C C C C D 80 D 80 , E , E F F h 60 h 60 40 40 0.5 1.0 2.03.0 5.0 10 20 30 50 100 200 300 500 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 10. MPSA05/06 DC Current Gain Figure 11. MPSA55/56 DC Current Gain 1.0 −1.0 T = 25°C T = 25°C J J 0.8 −0.8 V @ I /I = 10 V @ I /I = 10 BE(sat) C B BE(sat) C B S) S) T T OL 0.6 OL −0.6 E (V VBE(on) @ VCE = 1.0 V E (V VBE(on) @ VCE = −1.0 V G G A A LT 0.4 LT −0.4 O O V V V, V, 0.2 −0.2 V @ I /I = 10 V @ I /I = 10 CE(sat) C B CE(sat) C B 0 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 12. MPSA05/06 “ON” Voltages Figure 13. MPSA55/56 “ON” Voltages http://onsemi.com 4
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* NPN PNP , COLLECTOR−EMITTER VOLTAGE (VOLTS)VCE 10000.....008642 10IC 5m =0ICA m =A 10I0C m=A 25I0C m=A 50I0C Tm=JA = 25°C , COLLECTOR−EMITTER VOLTAGE (VOLTS)VCE −−−−−10000.....008642 −1I0C −m=5IA0C m=A −10IC0 =mA −25IC0 =mA −50IC0 =TmJA = 25°C 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 I , BASE CURRENT (mA) I , BASE CURRENT (mA) B B Figure 14. MPSA05/06 Collector Saturation Figure 15. MPSA55/56 Collector Saturation Region Region −0.8 −0.8 C) C) V/ ° V/ ° m m T ( −1.2 T ( −1.2 N N E E CI CI FI FI F −1.6 F −1.6 E E O O C C E E UR −2.0 R(cid:2)VB for VBE UR −2.0 R(cid:2)VB for VBE T T A A R R E E P P M −2.4 M −2.4 E E T T , B , B V V R(cid:2)−2.8 R(cid:2) −2.8 0.5 1.0 2.0 5.0 10 20 50 100 200 500 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 16. MPSA05/06 Base−Emitter Figure 17. MPSA55/56 Base−Emitter Temperature Coefficient Temperature Coefficient 1.0 0.7 D = 0.5 0.5 T N SIECE 0.3 0.2 NN 0.1 AA 0.2 ALIZED TRAL RESIST 00.0.17 0S.0IN5GLE PULSE 0.02 0.01 P(pk) ZTZ(cid:2)J(cid:2)(JJpCAk(() tt−)) ==T Crr(( tt=)) ••P (RRpk(cid:2)(cid:2))JJ ZAC(cid:2)JC(t) r(t), NORMTHERM 000...000325 SINGLE PULSE t1 t2 TDPSJOH C(pOWUk)WE R−RNV T E PARS UE= AL APSPD(EpP kT L)TI YMZR (cid:2)FEAJO IAAN(RTt) t1 DUTY CYCLE, D = t/t (SEE AN469) 1 2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k t, TIME (ms) Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response http://onsemi.com 5
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* ORDERING INFORMATION Device Package Shipping† MPSA05 TO−92 5000 Units / Bulk MPSA05G TO−92 5000 Units / Bulk (Pb−Free) MPSA05RLRA TO−92 2000 / Tape & Reel MPSA05RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPSA05RLRM TO−92 2000 / Ammo Pack MPSA05RLRMG TO−92 2000 / Ammo Pack (Pb−Free) MPSA06 TO−92 5000 Units / Bulk MPSA06G TO−92 5000 Units / Bulk (Pb−Free) MPSA06RL1G TO−92 2000 / Tape & Reel (Pb−Free) MPSA06RLG TO−92 2000 / Tape & Reel (Pb−Free) MPSA06RLRA TO−92 2000 / Tape & Reel MPSA06RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPSA06RLRM TO−92 2000 / Ammo Pack MPSA06RLRMG TO−92 2000 / Ammo Pack (Pb−Free) MPSA06RLRP TO−92 2000 / Ammo Pack MPSA06RLRPG TO−92 2000 / Ammo Pack (Pb−Free) MPSA55G TO−92 5000 Units / Bulk (Pb−Free) MPSA55RLRA TO−92 2000 / Tape & Reel MPSA55RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPSA56 TO−92 5000 Units / Bulk MPSA56G TO−92 5000 Units / Bulk (Pb−Free) MPSA56RLRA TO−92 2000 / Tape & Reel MPSA56RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPSA56RLRM TO−92 2000 / Ammo Pack MPSA56RLRMG TO−92 2000 / Ammo Pack (Pb−Free) MPSA56RLRP TO−92 2000 / Ammo Pack MPSA56RLRPG TO−92 2000 / Ammo Pack (Pb−Free) MPSA56ZL1 TO−92 2000 / Ammo Pack MPSA56ZL1G TO−92 2000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 6
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56* PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM NOTES: A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 H J K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− V C N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 SECTION X−X R 0.115 −−− 2.93 −−− 1 N V 0.135 −−− 3.43 −−− N NOTES: R A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T SPELAATNIENG K DIM MMIILNLIMETMEARXS A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 X X D GD 02..4400 02..5840 G J 0.39 0.50 J K 12.70 −−− N 2.04 2.66 V C P 1.50 4.00 R 2.93 −−− SECTION X−X V 3.43 −−− 1 N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com MPSA05/D 7