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  • 型号: MPS8099RLRAG
  • 制造商: ON Semiconductor
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MPS8099RLRAG产品简介:

ICGOO电子元器件商城为您提供MPS8099RLRAG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MPS8099RLRAG价格参考。ON SemiconductorMPS8099RLRAG封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 80V 500mA 150MHz 625mW 通孔 TO-92-3。您可以下载MPS8099RLRAG参考资料、Datasheet数据手册功能说明书,资料中有MPS8099RLRAG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS NPN GP SS 80V TO92两极晶体管 - BJT 500mA 80V NPN

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,ON Semiconductor MPS8099RLRAG-

数据手册

点击此处下载产品Datasheet

产品型号

MPS8099RLRAG

不同 Ib、Ic时的 Vce饱和值(最大值)

400mV @ 5mA,100mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

100 @ 1mA,5V

产品目录页面

点击此处下载产品Datasheet

产品种类

Transistors Bipolar- General Purpose

供应商器件封装

TO-92-3

其它名称

MPS8099RLRAGOSCT

功率-最大值

625mW

包装

剪切带 (CT)

发射极-基极电压VEBO

4 V

商标

ON Semiconductor

增益带宽产品fT

150 MHz

安装类型

通孔

安装风格

Through Hole

封装

Reel

封装/外壳

TO-226-3、TO-92-3(TO-226AA)成形引线

封装/箱体

TO-92-3 (TO-226)

工厂包装数量

2000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

625 mW

最大工作温度

+ 150 C

最大直流电集电极电流

0.5 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

80V

电流-集电极(Ic)(最大值)

500mA

电流-集电极截止(最大值)

100nA

直流集电极/BaseGainhfeMin

100

系列

MPS8099

配置

Single

集电极—发射极最大电压VCEO

80 V

集电极—基极电压VCBO

80 V

集电极—射极饱和电压

0.4 V

集电极连续电流

0.5 A

频率-跃迁

150MHz

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PDF Datasheet 数据手册内容提取

NPN − MPS8099; PNP − MPS8599 Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com Features • NPN PNP Pb−Free Packages are Available* COLLECTOR COLLECTOR 3 3 MAXIMUM RATINGS 2 2 BASE BASE Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc 1 1 Collector−Base Voltage VCBO 80 Vdc EMITTER EMITTER Emitter−Base Voltage VEBO 4.0 Vdc Collector Current − Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO−92 Total Device Dissipation @ TC = 25°C PD 1.5 W CASE 29 Derate above 25°C 12 mW/°C STYLE 1 Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range 12 1 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction−to−Ambient R(cid:2)JA 200 °C/W (Note 1) Thermal Resistance, Junction−to−Case R(cid:2)JC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. R(cid:2)JA is measured with the device soldered into a typical printed circuit board. MPS 8x99 AYWW(cid:2) (cid:2) x = 0 or 5 A = Assembly Location Y = Year WW = Work Week (cid:2) = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use Reference Manual, SOLDERRM/D. and best overall value. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: April, 2007 − Rev. 0 MPS8099/D

NPN − MPS8099; PNP − MPS8599 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) 80 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) 80 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 5.0 − Collector Cutoff Current ICES (cid:3)Adc (VCE = 60 Vdc, IB = 0) − 0.1 Collector Cutoff Current ICBO (cid:3)Adc (VCB = 80 Vdc, IE = 0) − 0.1 Emitter Cutoff Current IEBO (cid:3)Adc (VEB = 4.0 Vdc, IC = 0) − 0.1 ON CHARACTERISTICS (Note 2) DC Current Gain hFE − (IC = 1.0 mAdc, VCE = 5.0 Vdc) 100 300 (IC = 10 mAdc, VCE = 5.0 Vdc) 100 − (IC = 100 mAdc, VCE = 5.0 Vdc) 75 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 100 mAdc, IB = 5.0 mAdc) − 0.4 (IC = 100 mAdc, IB = 10 mAdc) − 0.3 Base−Emitter On Voltage VBE(on) Vdc (IC = 10 mAdc, VCE = 5.0 Vdc) 0.6 0.8 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 150 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 8.0 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 30 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle = 2.0%. http://onsemi.com 2

NPN − MPS8099; PNP − MPS8599 ORDERING INFORMATION Device Package Shipping† MPS8099 TO−92 5000 Units / Bulk MPS8099G TO−92 5000 Units / Bulk (Pb−Free) MPS8099RLRA TO−92 2000 / Tape & Reel MPS8099RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPS8099RLRP TO−92 2000 / Ammo Pack MPS8099RLRPG TO−92 2000 / Ammo Pack (Pb−Free) MPS8599RLRA TO−92 2000 / Tape & Reel MPS8599RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPS8599RLRMG TO−92 2000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1.0 0.7 D = 0.5 0.5 T N 0.2 SIECE 0.3 NN 0.1 AA 0.2 ALIZED TRAL RESIST 00.0.17 0S.0IN5GLE PULSE 0.02 0.01 P(pk) ZTZ(cid:2)J(cid:2)(JJpCAk(() tt−)) ==T Crr(( tt=)) ••P (RRpk(cid:2)(cid:2))JJ ZAC(cid:2)JC(t) r(t), NORMTHERM 000...000325 SINGLE PULSE t1 t2 TDPSJOH C(pOWUk)WE R−RNV T E PARS UE= AL APSPD(EpP kT L)TI YMZR (cid:2)FEAJO IAAN(RTt) t1 DUTY CYCLE, D = t/t (SEE AN469) 1 2 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k t, TIME (ms) Figure 1. Thermal Response TURN−ON TIME TURN−OFF TIME −1.0 V VCC +VBB VCC +40 V +40 V 5.0 (cid:3)s 100 R 100 R L L +10 V OUTPUT OUTPUT V R V R in B in B 0 tr = 3.0 ns 5.0 (cid:3)F * CS (cid:3) 6.0 pF 5.0 (cid:3)F * CS (cid:3) 6.0 pF 100 100 5.0 (cid:3)s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 2. Switching Time Test Circuits http://onsemi.com 3

NPN − MPS8099; PNP − MPS8599 NPN PNP Hz) 300 Hz) 300 M M CT ( TJ = 25°C CT ( TJ = 25°C U 200 U 200 D D O O −5.0 V R 5.0 V R P P DTH VCE = 1.0 V DTH VCE = −1.0 V WI WI D 100 D 100 N N A A B B − 70 − 70 N N AI AI G G T− 50 T− 50 N N E E R R R R CU 30 CU 30 , T 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100, T −1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70−100 f f I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. Current−Gain − Bandwidth Product Figure 4. Current−Gain − Bandwidth Product 40 40 TJ = 25°C TTJJ = = 2 255°°CC 20 20 F) F) Cibo E (p Cibo E (p C C N 10 N 10 A A T T CI 8.0 CI 8.0 A A P P A 6.0 A 6.0 C C C, C, Cobo 4.0 4.0 C obo 2.0 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 V , REVERSE VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) R R Figure 5. Capacitance Figure 6. Capacitance 1.0 k 1.0 k 700 VCC = 40 V 700 VCC = −40 V 500 IC/IB = 10 ts 500 IC/IB = 10 IB1 = IB2 ts IB1 = IB2 300 TJ = 25°C 300 TJ = 25°C 200 200 s) s) n n ME ( 100 ME ( 100 tf TI 70 TI 70 t, 50 tf t, 50 t r 30 30 20 t 20 r td @ VBE(off) = 0.5 V td @ VBE(off) = −0.5 V 10 10 10 20 30 50 70 100 200 −10 −20 −30 −50 −70 −100 −200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. Switching Times Figure 8. Switching Times http://onsemi.com 4

NPN − MPS8099; PNP − MPS8599 NPN PNP 1.0 k −1.0 k 700 −700 500 −500 A) A) m 300 m −300 T ( T ( EN 200 EN −200 R R R R U U C 100 C −100 R R O 70 O −70 T T EC 50 CURRENT LIMIT EC −50 CURRENT LIMIT L L L THERMAL LIMIT L THERMAL LIMIT I, COC 2300 SECOND BREAKDOWN LIMMITPS8098 I, COC −−2300 SECOND BREAKDOWN LIMMIPTS8598 DUTY CYCLE ≤ 10% DUTY CYCLE ≤ 10% MPS8099 MPS8599 10 −10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −2.0 −3.0 −5.0−7.0 −10 −20 −30 −50 −70 −100 V , COLLECTOR−EMITTER VOLTAGE (VOLTS) V , COLLECTOR−EMITTER VOLTAGE (VOLTS) CE CE Figure 9. Active−Region Safe Operating Area Figure 10. Active−Region Safe Operating Area 400 300 T = 125°C J TJ = 125°C 200 25°C N 200 N 25°C GAI −55°C GAI T T N N E E 100 R R R R U 100 U −55°C C C 70 DC 80 VCE = 5.0 V DC V = −5.0 V , FE , FE 50 CE h 60 h 40 30 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 11. DC Current Gain Figure 12. DC Current Gain 1.0 1.0 TJ = 25°C TJ = 25°C 0.8 0.8 VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 S) S) T T E (VOL 0.6 VBE @ VCE = 5.0 V E (VOL 0.6 VBE @ VCE = 5.0 V G G A A LT 0.4 LT 0.4 O O V V V, V, 0.2 0.2 V @ I /I = 10 V @ I /I = 10 CE(sat) C B CE(sat) C B 0 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 13. “ON” Voltages Figure 14. “ON” Voltages http://onsemi.com 5

NPN − MPS8099; PNP − MPS8599 NPN PNP OLTS) 2.0 TJ = 25°C OLTS) 2.0 GE (V 1.6 20IC m =A 50IC m =A 10I0C m=A 20I0C m=A GE (V 1.6 10IC m =A 20IC m =A 50IC m =A 10I0C m=A 20I0C m=A OLTA OLTA MITTER V 1.2 MITTER V 1.2 , COLLECTOR−EVCE 00..084 10IC m =A , COLLECTOR−EVCE 00..084 TJ = 25°C 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 15. Collector Saturation Region Figure 16. Collector Saturation Region −1.0 −1.0 C) C) V/ ° V/ ° m m T ( −1.4 T ( −1.4 N N E E CI CI FI FI F −1.8 F −1.8 E E R FOR V O R FOR V O (cid:2)VB BE C (cid:2)VB BE C E −55°C TO 125°C E −55°C TO 125°C R R U −2.2 U −2.2 T T A A R R E E P P M −2.6 M −2.6 E E T T , B , B V V (cid:2) −3.0 (cid:2)−3.0 R R 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. Base−Emitter Temperature Coefficient Figure 18. Base−Emitter Temperature Coefficient http://onsemi.com 6

NPN − MPS8099; PNP − MPS8599 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM NOTES: A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 H J K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− V C N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 SECTION X−X R 0.115 −−− 2.93 −−− 1 N V 0.135 −−− 3.43 −−− N NOTES: R A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T SPELAATNIENG K DIM MMIILNLIMETMEARXS A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 X X D GD 02..4400 02..5840 G J 0.39 0.50 J K 12.70 −−− N 2.04 2.66 V C P 1.50 4.00 R 2.93 −−− SECTION X−X V 3.43 −−− 1 N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com MPS8099/D 7