MPS2907A Series General Purpose Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector−Emitter Voltage VCEO −60 Vdc 1 EMITTER Collector−Base Voltage VCBO −60 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −600 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C TO−92 CASE 29 Total Device Dissipation @ TC = 25°C PD 1.5 W STYLE 1 Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C 12 1 2 Temperature Range 3 3 STRAIGHT LEAD BENT LEAD THERMAL CHARACTERISTICS BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction−to−Ambient R(cid:2)JA 200 °C/W Thermal Resistance, Junction−to−Case R(cid:2)JC 83.3 °C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MPSx Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x907x YWW(cid:2) (cid:2) DEVICE MARKING Device Line 1 Line 2 MPS2907AG MPS 2907A Y = Year MPS2907ARLG MPS2 907A WW = Work Week (cid:2) = Pb−Free Package MPS2907ARLRAG MPS 2907 (Note: Microdot may be in either location) MPS2907ARLRPG MPS 2907 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2013 − Rev. 6 MPS2907A/D

MPS2907A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) V(BR)CEO −60 − Vdc Collector−Base Breakdown Voltage (IC = −10 (cid:3)Adc, IE = 0) V(BR)CBO −60 − Vdc Emitter−Base Breakdown Voltage (IE = −10 (cid:3)Adc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc Collector Cutoff Current ICBO (cid:3)Adc (VCB = −50 Vdc, IE = 0) − −0.01 (VCB = −50 Vdc, IE = 0, TA = 150°C) − −10 Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IB − −50 nAdc ON CHARACTERISTICS DC Current Gain hFE − (IC = −0.1 mAdc, VCE = −10 Vdc) 75 − (IC = −1.0 mAdc, VCE = −10 Vdc) 100 − (IC = −10 mAdc, VCE = −10 Vdc) 100 − (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) 100 300 (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) 50 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = −150 mAdc, IB = −15 mAdc) − −0.4 (IC = −500 mAdc, IB = −50 mAdc) − −1.6 Base−Emitter Saturation Voltage (Note 1) VBE(sat) Vdc (IC = −150 mAdc, IB = −15 mAdc) − −1.3 (IC = −500 mAdc, IB = −50 mAdc) − −2.6 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Notes 1 and 2), fT 200 − MHz (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF SWITCHING CHARACTERISTICS Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc, ton − 45 ns Delay Time IB1 = −15 mAdc) (Figures 1 and 5) td − 10 ns Rise Time tr − 40 ns Turn−Off Time (VCC = −6.0 Vdc, IC = −150 mAdc, toff − 100 ns Storage Time IB1 = IB2 = 15 mAdc) (Figure 2) ts − 80 ns Fall Time tf − 30 ns 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2

MPS2907A Series INPUT INPUT Zo = 50 (cid:4) -30 V Zo = 50 (cid:4) +15 V -6.0 V PRF = 150 PPS PRF = 150 PPS RISE TIME ≤ 2.0 ns 200 RISE TIME ≤ 2.0 ns 1.0 k 37 P.W. < 200 ns P.W. < 200 ns 0 1.0 k TO OSCILLOSCOPE 0 1.0 k TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns RISE TIME ≤ 5.0 ns -16 V 50 -30 V 50 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit TYPICAL CHARACTERISTICS 1000 VCE = −10 V N TA = 150°C AI G NT TA = 25°C E R UR 100 TA = −55°C C C D E, F h 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain S) -1.0 T L O V GE ( -0.8 TA IC = -1.0 mA -10 mA -100 mA -500 mA L O V R -0.6 E T T MI E - -0.4 R O T C E LL -0.2 O C V , CE 0 -0.005 -0.01 -0.02 -0.03 -0.05-0.07-0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 IB, BASE CURRENT (mA) Figure 4. Collector Saturation Region http://onsemi.com 3

MPS2907A Series ORDERING INFORMATION Device Package Shipping† MPS2907AG TO−92 5000 Units / Bulk (Pb−Free) MPS2907ARLG TO−92 (Pb−Free) 2000 / Tape & Reel MPS2907ARLRAG TO−92 (Pb−Free) MPS2907ARLRPG TO−92 2000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 200 VCC = -30 V 100 tr TICJ/ I=B 2=5 1°0C 70 s) 50 n E ( 30 M t, TI 20 td @ VBE(off) = 0 V 10 7.0 5.0 2.0 V 3.0 -5.0-7.0 -10 -20 -30 -50 -70 -100 -200-300 -500 IC, COLLECTOR CURRENT Figure 5. Turn−On Time 500 300 VCC = -30 V 200 IC/IB = 10 tf IB1 = IB2 100 TJ = 25°C ns) 70 E ( 50 M t, TI 30 t′s = ts - 1/8 tf 20 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50-70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time http://onsemi.com 4

MPS2907A Series TYPICAL SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz B) d 8.0 8.0 RE ( dB) NOISE FIGU 64..00 I---C515 000=00 (cid:3)- (cid:3)(cid:3)1A.AA,0 ,,R mRRs Ass= ,== 2R 51.7s6. 6 =0k (cid:4) k4(cid:4)(cid:4)30 (cid:4) OISE FIGURE ( 64..00 I---C151 00.=000 -m (cid:3)(cid:3)5A0AA (cid:3)A NF, F, N N 2.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE ((cid:4)) Figure 7. Frequency Effects Figure 8. Source Resistance Effects z) 100 MH 400 CT ( 300 U pF) Cibo ROD 200 CE ( TH P N D A WI CIT 10 Cobo ND 100 C, CAPA AIN — BA 8600 VTJC E= =2 5-°2C0 V G - 40 T N E 30 R R U 1 C 20 0.1 1 10 , T -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500-1000 f REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain − Bandwidth Product 1 1 IC/IB = 10 ERV) ON 0.8 TA = −55°C TTE ( R EMITAG TTEV) TA = 25°C V, COLLECTOR−CESATURATION VOL 0.1 TTAA ==T 21A55 =°0C °−C55°C V, BASE−EMIBE(ON)VOLTAGE ( 000...642 TA = 150°C VCE = −10 V 0.01 0 0.001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector−Emitter Saturation Figure 12. Base−Emitter Turn−ON Voltage vs. Voltage vs. Collector Current Collector Current http://onsemi.com 5

MPS2907A Series +0.5 1 SE−EMITTERN VOLTAGE (V) 00..86 TTAA = = − 2555°°CC °ENT (mV/C)--01..050 R(cid:2)VC for VCE(sat) , BAsat)RATIO 0.4 TA = 150°C EFFICI-1.5 E(U O BT C VA S 0.2 -2.0 R(cid:2)VB for VBE IC/IB = 10 -2.5 0 0.0001 0.001 0.01 0.1 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 -500 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 13. Base Emitter Saturation Voltage vs. Figure 14. Temperature Coefficients Collector Current http://onsemi.com 6

MPS2907A Series PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A NOTES: B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 H J K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X−X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N R A B BENT LEAD N1O.TEDSIM:ENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T SEATING K MILLIMETERS PLANE DIM MIN MAX A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 X X D GD 02..4400 02..5840 G J 0.39 0.50 J K 12.70 --- N 2.04 2.66 V C P 1.50 4.00 R 2.93 --- SECTION X−X V 3.43 --- 1 N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MPS2907A/D 7