Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M O C September 2015 3 0 6 X M , MOC3061M, MOC3062M, MOC3063M, M O MOC3162M, MOC3163M C 3 1 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak) 6 X M Features Description — 6 • Simplifies Logic Control of 115/240 VAC Power The MOC306XM and MOC316XM devices consist of a - P • Zero Voltage Crossing to Minimize Conducted and GaAs infrared emitting diode optically coupled to a i n Radiated Line Noise monolithic silicon detector performing the function of a D zero voltage crossing bilateral triac driver. • 600 V Peak Blocking Voltage IP • Superior Static dv/dt They are designed for use with a triac in the interface of Z – 600 V/μs (MOC306xM) logic systems to equipment powered from 115/240 VAC er lines, such as solid-state relays, industrial controls, o – 1000 V/μs (MOC316xM) - motors, solenoids and consumer appliances, etc. C • Safety and Regulatory Approvals r o – UL1577, 4,170 VAC for 1 Minute s RMS s – DIN EN/IEC60747-5-5 T r i Applications a c • Solenoid/Valve Controls D r • Static Power Switches iv e • Temperature Controls r O • AC Motor Starters p • Lighting Controls t o • AC Motor Drives c o • E.M. Contactors u p • Solid State Relays l e r ( 6 0 0 Schematic Package Outlines V o l t P e a k ANODE 1 6 MAIN TERM. ) CATHODE 2 5 NC* ZERO N/C 3 CROSSING 4 MAIN TERM. CIRCUIT *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic Figure 2. Package Outlines ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5

M O Safety and Insulation Ratings C 3 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 0 6 data. Compliance with the safety ratings shall be ensured by means of protective circuits. X M Parameter Characteristics , M Installation Classifications per DIN VDE < 150 VRMS I–IV O 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–IV C RMS 3 Climatic Classification 40/85/21 1 6 X Pollution Degree (DIN VDE 0110/1.89) 2 M Comparative Tracking Index 175 — 6 - P Symbol Parameter Value Unit in D Input-to-Output Test Voltage, Method A, V x 1.6 = V , Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1360 Vpeak IP m V Z PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , e 100% Production Test with t = 1 s, PartiaIlO DRiMscharge < 5 pPCR 1594 Vpeak ro m - C V Maximum Working Insulation Voltage 850 V IORM peak r o VIOTM Highest Allowable Over-Voltage 6000 Vpeak s s External Creepage ≥ 7 mm T External Clearance ≥ 7 mm ri a c External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm D DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm r i v R Insulation Resistance at T , V = 500 V > 109 Ω e IO S IO r O p t o c o u p l e r ( 6 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 2

M O Absolute Maximum Ratings C Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 3 0 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 6 X In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. M The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified. A , M Symbol Parameters Device Value Unit O C TOTAL DEVICE 3 1 TSTG Storage Temperature All -40 to +150 °C 6 X TOPR Operating Temperature All -40 to +85 °C M T Junction Temperature Range All -40 to +100 °C — J 260 for 6 T Lead Solder Temperature All °C - SOL 10 seconds P i n Total Device Power Dissipation at 25°C Ambient 250 mW P All D D Derate Above 25°C 2.94 mW/°C IP EMITTER Z e IF Continuous Forward Current All 60 mA ro - V Reverse Voltage All 6 V C R r Total Power Dissipation at 25°C Ambient 120 mW o P All s D s Derate Above 25°C 1.41 mW/°C T DETECTOR r i a V Off-State Output Terminal Voltage All 600 V c DRM D Peak Non-Repetitive Surge Current r ITSM (Single Cycle 60 Hz Sine Wave) All 1 A iv e Total Power Dissipation at 25°C Ambient 150 mW r P All O D Derate Above 25°C 1.76 mW/°C p t o c o u p l e r ( 6 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 3

M O Electrical Characteristics C T = 25°C unless otherwise specified. 3 A 0 Individual Component Characteristics 6 X M Symbol Parameters Test Conditions Device Min. Typ. Max. Unit , M EMITTER O C V Input Forward Voltage I = 30 mA All 1.3 1.5 V F F 3 I Reverse Leakage Current V = 6 V All 0.005 100 μA 1 R R 6 X DETECTOR M Peak Blocking Current, MOC306XM 10 500 — I V = 600 V, I = 0(1) nA DRM1 Either Direction DRM F MOC316XM 10 100 6 - Critical Rate of Rise of MOC306XM 600 1500 P dv/dt Off-State Voltage IF = 0 (Figure 11)(2) MOC316XM 1000 V/μs in D I P Transfer Characteristics Z e Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit r o MOC3061M 15 -C r MOC3062M o LED Trigger Current Main Terminal 10 s IFT (Rated I ) Voltage = 3 V(3) MOC3162M mA s FT T MOC3063M r 5 i MOC3163M a c I = 100 mA peak, D VTM Peak On-State Voltage, Either Direction ITF M= rated IFT All 1.8 3.0 V riv I Holding Current, Either Direction All 500 μA e H r O p Zero Crossing Characteristics t o Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit c o u MOC3061M p Inhibit Voltage (MT1-MT2 MOC3062M 12 20 le r VINH voltage above which IF = rated IFT MOC3063M V (6 device will not trigger) MOC3162M 0 12 15 0 MOC3163M V o I Leakage in Inhibited IF = rated IFT, DRM = 600 V, All 2 mA lt DRM2 State off-state P e a Isolation Characteristics k ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Isolation Voltage(4) f = 60 Hz, t = 1 Minute 4170 VAC ISO RMS R Isolation Resistance V = 500 V 1011 Ω ISO I-O DC C Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF ISO Notes: 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. 3. All devices are guaranteed to trigger at an I value less than or equal to max I . Therefore, recommended operating F FT I lies between max I (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and F FT MOC3163M) and absolute maximum I (60 mA). F 4. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and ISO pins 4, 5 and 6 are common. ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 4

M O Typical Performance Curves C 3 0 6 1.7 1.6 X M 1.6 , 1.5 VTM = 3V M GE (V) 11..45 1.4 NORMALIZED TO TA = 25°C OC3 LTA 1.3 ED 1.3 16 RD VO 1.2 TA = -40°C MALIZ 1.2 XM RWA 1.1 TA = 25°C NOR — O , T 1.1 6 V, FF 1.0 TA = 85°C IF -P 1.0 i 0.9 n D 0.8 0.9 I P 0.7 Z 0.1 1 10 100 0.8 e -40 -20 0 20 40 60 80 100 r IF, LED FORWARD CURRENT (mA) TA, AMBIENT TEMPERATURE (°C) o- C Figure 3. LED Forward Voltage vs. Forward Current Figure 4. Trigger Current Vs. Temperature r o s s T r 16 10000 ia c ED) 14 D NT (NORMALIZ 1102 TNAO =R M25A°LCIZED TO PWIN >> 100μs RRENT (nA) 1010000 river Op E U t R C o UR 8 GE c C A o R K 10 u D TRIGGE 46 I, LEADRM 1 pler ( E 6 , LT 2 00 IF 0.1 V 0 -40 -20 0 20 40 60 80 100 o 1 10 100 l PWIN, LED TRIGGER PULSE WIDTH (μs) TA, AMBIENT TEMPERATURE (°C) t P e Figure 5. LED Current Required to Trigger vs. Figure 6. Leakage Current, IDRM vs. Temperature a LED Pulse Width k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 5

M O Typical Performance Curves (Continued) C 3 0 6 X 2.4 800 M 2.2 INFO =R RMAATLEIZDE IDFT TO TA = 25°C 600 , M 2.0 TA = 25°C O mA) 400 C 1.8 T ( 3 ED 1.6 EN 200 16 LIZ RR X MA 1.4 CU 0 M R E O 1.2 T — N A I, DRM2 01..80 , ON-STTM --420000 6-Pin I 0.6 -600 D I P 0.4 -40 -20 0 20 40 60 80 100 -800 Z -4 -3 -2 -1 0 1 2 3 4 e TA, AMBIENT TEMPERATURE (°C) VTM, ON-STATE VOLTAGE (VOLTS) ro - Figure 7. IDRM2, Leakage in Inhibit State vs. Temperature Figure 8. On-State Characteristics C r o s s 3.2 1.20 T r i ED) 2.8 1.15 NORMALIZED TO TA = 25°C ac MALIZ 2.4 D 1.10 Driv G CURRENT (NOR 112...260 , NORMALIZEVINH 011...900505 er Optoco N 0.90 u DI p HOL 0.8 0.85 le I, H 0.4 0.80 r (6 -40 -20 0 20 40 60 80 100 0 0 0.0 TA, AMBIENT TEMPERATURE (°C) -40 -20 0 20 40 60 80 100 V o TA, AMBIENT TEMPERATURE (°C) lt Figure 9. IH, Holding Current vs. Temperature Figure 10. Inhibit Voltage vs. Temperature P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 6

M O 1. 100x scope probes are used, to allow high speeds and voltages. C 2. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then 3 0 removing the current. The variable vernier resistor combined with various capacitor combinations allows the dv/dt to 6 X be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the M LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. t is measured at this RC , point and recorded. M O 27Ω C VDRM/VRRM SELECT 2W 1000Ω 3 10 WATT 1 X100 PROBE 6 WIREWOUND 6 1 X DIFPFREERAEMNTPIAL 2 DUT 20kΩ 2W 0.33μF 1000V 0.047μF M X100 PROBE 4 1000V — 470pF 6 - dV P MTEOMUPNETR DAUTTU ROEN CONTROLLED VERdNtIER 100Ω 0.001μF in Cμ PLATE 2W D 0.005μF 1 MΩ 12.W2 MEAΩCH IP 82Ω 0.01μF Z 2W POWER 2W e 0.047μF TEST ro - C 1N914 0.1μF r o 20V RFP4N100 0.47μF 0-1000V ss 56Ω 1000Ω 10mA T fP =W 1 =0 1H0z0 μs 2W 1/4W 1N1986V7A ria 50 Ω PULSE c GENERATOR D r ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN i v dV Figure 11. Circuit for Static Measurement of Power Thyristors e ddVt r O p Basic Applications t o c Typical circuit for use when hot line switching is o u required. In this circuit the “hot” side of the line is p switched and the load connected to the cold or le neutral side. The load may be connected to either r ( the neutral or hot line. Rin 1 6 360Ω 6 VCC HOT 0 FKPF12N60 0 oRfi nt hise cpaalrctu, l1a5temdA s ofo trh tahte I FM iOs Ceq3u0a6l1 tMo ,t h1e0 mraAte fdo rIF T 2 MMMOOOCCC333000666123MMM 5 39Ω Vo the MOC3062M, or 5mA for the MOC3063M. 3 4 240 VAC lt The 39Ω resistor and 0.01μF capacitor are for 360Ω 0.01μF P e snubbing of the triac and is often, but not always, LOAD NEUTRAL a necessary depending upon the particular triac and k ) Figure 12. Hot-Line Switching Application Circuit load used. Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors, R1 and R2, are 115 VAC optional 330Ω. R1 D1 1 6 Note: VCC This optoisolator should not be used to drive Rin 2 MMOOCC33006612MM 5 SCR a load directly. It is intended to be a trigger 3 MOC3063M 4 360Ω SCR device only. R2 D2 LOAD Figure 13. Inverse-Parallel SCR Driver Circuit ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 7

M O Reflow Profile C 3 0 Max. Ramp-up Rate = 3°C/S 6 TP Max. Ramp-down Rate = 6°C/S X 260 M 240 tP , TL M 220 O 200 Tsmax C tL 3 ) 180 Preheat Area 1 C 6 ° 160 X e ( 140 Tsmin M ur ts — t 120 a er 100 6- p P m 80 i n Te 60 D 40 IP 20 Z e 0 r o 120 240 360 - C Time 25°C to Peak ro s Time (seconds) s T r i a c Profile Freature Pb-Free Assembly Profile D r i Temperature Minimum (Tsmin) 150°C v e Temperature Maximum (Tsmax) 200°C r O Time (t ) from (Tsmin to Tsmax) 60 seconds to 120 seconds p S t o Ramp-up Rate (T to T ) 3°C/second maximum L P c o Liquidous Temperature (TL) 217°C u p Time (tL) Maintained Above (TL) 60 seconds to 150 seconds le Peak Body Package Temperature 260°C +0°C / –5°C r ( 6 Time (tP) within 5°C of 260°C 30 seconds 0 0 Ramp-down Rate (TP to TL) 6°C/second maximum V o Time 25°C to Peak Temperature 8 minutes maximum l t P e Figure 14. Reflow Profile a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 8

M O Ordering Information(5) C 3 0 Part Number Package Packing Method 6 X MOC3061M DIP 6-Pin Tube (50 Units) M , MOC3061SM SMT 6-Pin (Lead Bend) Tube (50 Units) M O MOC3061SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) C MOC3061VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 3 1 6 MOC3061SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) X M MOC3061SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) — MOC3061TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 6 Note: - P 5. The product orderable part number system listed in this table also applies to the MOC3062M, MOC3063M, in MOC3162M, and MOC3163M product families. D I P Z Marking Information e r o - C r o 1 s s T r MOC3061 2 i a c D V X YY Q 6 r i v e r O 3 4 5 p t o c Figure 15. Top Mark o u p l e r ( Top Mark Definitions 6 0 0 1 Fairchild Logo V o 2 Device Number l t DIN EN/IEC60747-5-5 Option (only appears on component P 3 e ordered with this option) a k 4 One-Digit Year Code, e.g., ‘5’ ) 5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’ 6 Assembly Package Code ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC306XM, MOC316XM Rev. 1.5 9

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MOC3063SR2M MOC3063M MOC3063SR2VM MOC3063VM MOC3063SM MOC3063TVM MOC3063SVM