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M O C August 2015 3 0 3 X M , MOC3031M, MOC3032M, MOC3033M, M O MOC3041M, MOC3042M, MOC3043M C 3 0 6-Pin DIP Zero-Cross Triac Driver Output Optocoupler 4 X (250/400 Volt Peak) M — 6 Features Description - P i • Simplifies Logic Control of 115 VAC Power The MOC303XM and MOC304XM devices consist of a n • Zero Voltage Crossing GaAs infrared emitting diode optically coupled to a D I • dv/dt of 2000 V/μs Typical, 1000 V/μs Guaranteed monolithic silicon detector performing the function of a P zero voltage crossing bilateral triac driver. Z • Peak Blocking Voltage e – 250 V, MOC303XM They are designed for use with a triac in the interface of ro – 400 V, MOC304XM logic systems to equipment powered from 115 VAC -C lines, such as teletypewriters, CRTs, solid-state relays, r • Safety and Regulatory Approvals o industrial controls, printers, motors, solenoids and s – UL1577, 4,170 VACRMS for 1 Minute consumer appliances, etc. s – DIN EN/IEC60747-5-5 T r i a Applications c D • Solenoid/Valve Controls r i v • Lighting Controls e r • Static Power Switches O • AC Motor Drives u t • Temperature Controls p u • E.M. Contactors t O • AC Motor Starters p • Solid State Relays to c o Schematic Package Outlines u p l e r ( 2 5 0 ANODE 1 6 MAIN TERM. /4 0 0 V o CATHODE 2 5 NC* l t P e ZERO a N/C 3 CROSSING 4 MAIN TERM. k CIRCUIT ) *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic Figure 2. Package Outlines ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6

M O Safety and Insulation Ratings C 3 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 0 3 data. Compliance with the safety ratings shall be ensured by means of protective circuits. X M Parameter Characteristics , M Installation Classifications per DIN VDE < 150 VRMS I–IV O 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–IV C RMS 3 Climatic Classification 40/85/21 0 4 X Pollution Degree (DIN VDE 0110/1.89) 2 M Comparative Tracking Index 175 — 6 - P Symbol Parameter Value Unit in D Input-to-Output Test Voltage, Method A, V x 1.6 = V , Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1275 Vpeak IP m V Z PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , e 100% Production Test with t = 1 s, PartiaIlO DRiMscharge < 5 pPCR 1594 Vpeak ro m - C V Maximum Working Insulation Voltage 850 V IORM peak r o VIOTM Highest Allowable Over-Voltage 6000 Vpeak s s External Creepage ≥ 7 mm T External Clearance ≥ 7 mm ri a c External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm D DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm r i v R Insulation Resistance at T , V = 500 V > 109 Ω e IO S IO r O u t p u t O p t o c o u p l e r ( 2 5 0 / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 2

M O Absolute Maximum Ratings C Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 3 0 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 3 X In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. M The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified. A , M Symbol Parameters Device Value Unit O C TOTAL DEVICE 3 0 TSTG Storage Temperature All -40 to +150 °C 4 X TOPR Operating Temperature All -40 to +85 °C M T Junction Temperature Range All -40 to +100 °C — J 260 for 6 T Lead Solder Temperature All °C - SOL 10 seconds P i n Total Device Power Dissipation at 25°C Ambient 250 mW P All D D Derate Above 25°C 2.94 mW/°C IP EMITTER Z e I Continuous Forward Current All 60 mA r F o - V Reverse Voltage All 6 V C R r Total Power Dissipation at 25°C Ambient 120 mW o P All s D s Derate Above 25°C 1.41 mW/°C T DETECTOR r i a MOC3031M c D MOC3032M 250 r i MOC3033M v V Off-State Output Terminal Voltage V e DRM MOC3041M r O MOC3042M 400 u t MOC3043M p u Peak Repetitive Surge Current t ITSM (PW = 100 μs, 120 pps) All 1 A O p Total Power Dissipation at 25°C Ambient 150 mW to PD All c Derate Above 25°C 1.76 mW/°C o u p l e r ( 2 5 0 / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 3

M O Electrical Characteristics C T = 25°C unless otherwise specified. 3 A 0 3 Individual Component Characteristics X M Symbol Parameters Test Conditions Device Min. Typ. Max. Unit , M O EMITTER C V Input Forward Voltage I = 30 mA All 1.25 1.50 V 3 F F 0 I Reverse Leakage Current V = 6 V All 0.01 100 μA 4 R R X M DETECTOR — Peak Blocking Current, IDRM1 Either Direction Rated VDRM, IF = 0(1) All 100 nA 6 - P VTM PEeithaekr O Dnir-eSctatitoen Voltage, ITM = 100 mA peak, IF = 0 All 1.8 3.0 V in D dv/dt Critical Rate of Rise of I = 0 (Figure 11)(2) All 1000 2000 V/μs IP Off-State Voltage F Z e r o Transfer Characteristics -C r Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit o s MOC3031M s 15 T MOC3041M r i a Main Terminal MOC3032M c IFT LED Trigger Current Voltage = 3 V(3) MOC3042M 10 mA D r i MOC3033M v 5 e MOC3043M r O I Holding Current, All 400 μA u H Either Direction tp u t O Zero Crossing Characteristics p t Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit o c o I = rated I , MT1-MT2 F FT u voltage above which device p VIH Inhibit Voltage will not trigger All 20 V le r off-state ( 2 Leakage in Inhibited I = rated I , rated V 5 I F FT DRM All 2 mA 0 DRM2 State off-state / 4 0 0 Isolation Characteristics V o l Symbol Parameter Test Conditions Device Min. Typ. Max. Unit t P V Isolation Voltage(4) t = 1 Minute All 4170 VAC e ISO RMS a k ) Notes: 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. 3. All devices are guaranteed to trigger at an I value less than or equal to max I . Therefore, recommended operating F FT I lies between max I (15 mA for MOC3031M and MOC3041M, 10 mA for MOC3032M and MOC3042M, 5 mA for F FT MOC3033M and MOC3043M) and absolute maximum I (60 mA). F 4. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and ISO pins 4, 5 and 6 are common. ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 4

M O Typical Performance Curves C 3 0 3 X 1.6 800 IF = 30mA M 1.5 600 TA = 25°C , M O )V 1.4 )Am 400 C ( E ( T 3 G N 0 AT 1.3 ER 200 4 L R X O U V DRA 1.2 TA = -40°C C ETA 0 M — WRO 1.1 TA = 25°C TS-N -200 6 F O - - VF 1.0 TA = 85°C ,IMT -400 Pin -600 D 0.9 I P 0.80.1 1 10 100 -800-4 -3 -2 -1 0 1 2 3 4 Ze r IF - LED FORWARD CURRENT (mA) VTM, ON-STATE VOLTAGE (VOLTS) o - Figure 3. LED Forward Voltage vs. Forward Current Figure 4. On-State Characteristics C r o s s T 1.3 10000 ri a c D 1.2 )A 1000 riv n( T er D NE O EZILAMRON ,ITF 11..01 RRUC EGAKAEL ,MRD 11000 utput Opto I 1 0.9 c o u NORMALIZED TO TA = 25oC 0.1 pl 0.8-40 -20 TA, A0MBIENT2 0TEMPE4R0ATURE6 (0°C) 80 100 -40 -20 TA,0 AMBIEN2T0 TEMPE4R0ATURE 6(0oC) 80 100 er (25 Figure 5. Trigger Current vs. Temperature Figure 6. Leakage Current, I vs. Temperature 0 DRM / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 5

M O Typical Performance Curves (Continued) C 3 0 3 X 1.8 16 M NORMALIZED TO PWIN >> 100 μs , 1.6 )D 14 M EZ O L DEZ 1.4 IF = RATED IFT IAMRO 12 C30 ILAMRO 1.2 N( TNER 10 4XM N ,2M 1.0 RUC 8 — IRD 0.8 REG 6 6- G P 0.6 IRT DEL 4 in D 0.4 ,ITF 2 IP -40 -20 0 20 40 60 80 100 Z TA, AMBIENT TEMPERATURE (°C) 01 10 100 er o PWIN, LED TRIGGER PULSE WIDTH (μS) -C Figure 7. IDRM2 - Leakage in Inhibit State vs. Temperature Figure 8. LED Current Required to Trigger vs. LED Pulse Width r o s s T 3.2 1.3 ri a c 2.8 D )DEZILA 2.4 1.2 N O TRAM =A 2L5IZ°ECD TO rive M D 1.1 r R E ON 2.0 ZIL O ( T AM u NE 1.6 RO 1.0 tp RRUC G 1.2 N - VHNI 0.9 ut O N p IDLO 0.8 to H 0.8 c ,H o I 0.4 u p 0.7 l -40 -20 0 20 40 60 80 100 e 0.0 r -40 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) (2 TA, AMBIENT TEMPERATURE (°C) 5 0 Figure 9. Holding Current, IH vs. Temperature Figure 10. Inhibit Voltage vs. Temperature /4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 6

M O C 3 1. The mercury wetted relay provides a high speed repeated 0 3 pulse to the D.U.T. X M 2. 100x scope probes are used, to allow high speeds and , +250 for MOC303XM voltages. M +400 for MOC304XM O Vdc RTEST R = 10 kΩ 3. The worst-case condition for static dv/dt is established by C triggering the D.U.T. with a normal LED input current, then 3 PINUPLUSTE MWEERTCTUERDY CTEST X100 rtoe mbeo vginragd tuhael lcyu inrrcerneta. sTehde u vnatrili athbele DR.TUE.TST. caollnotwinsu tehse t od v/dt 04X RELAY DD..UU..TT.. SPCROOBPEE trigger in response to the applied voltage pulse, even after M the LED current has been removed. The dv/dt is then — decreased until the D.U.T stops triggering. τRC is 6 measured at this point and recorded. - Figure 11. Static dv/dt Test Circuit P i n APPLIED VOLTAGE Vmax = 250 V APPLIED VOLTAGE Vmax = 400 V DI WAVEFORM 158 V WAVEFORM 252 V P 0 VOLTS τRC dv/dt = 0.6τ3R VCmax = 1 R58C 0 VOLTS τRC dv/dt = 0.6τ3R VCmax = τ2 R52C Zero - Figure 12. Static dv/dt Test Waveform Figure 13. Static dv/dt Test Waveform C (MOC3031M, MOC3032M, MOC3033M) (MOC3041M, MOC3042M, MOC3043M) r o s s T r i Typical circuit (Fig 14, 15) for use when hot line switching is required. In this circuit the “hot” side of the line is switched a c and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. D r i v Rin is calculated so that IF is equal to the rated IFT of the part, 5mA for the MOC3033M and MOC3043M, 10mA for the e MOC3032M and MOC3042M, or 15mA for the MOC3031M and MOC3041M. The 39 ohm resistor and 0.01μF r O capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load u used. t p u t O Rin 1 6 180Ω Rin 1 6 360Ω p VCC HOT VCC HOT t 2 MOC3031M 5 2 MOC3041M 5 o MMOOCC33003323MM 39Ω * MMOOCC33004423MM 39Ω * co 3 4 115 VAC 3 4 240 VAC u 0.01 0.01 p 1 k 330 l e LOAD NEUTRAL LOAD NEUTRAL r ( *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. 2 5 Figure 14. Hot-Line Switching Application Circuit Figure 15. Hot-Line Switching Application Circuit 0 (MOC3031M, MOC3032M, MOC3033M) (MOC3041M, MOC3042M, MOC3043M) /4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 7

M O C 3 0 3 X 115 VAC M , R1 D1 M O 1 6 C V CC 3 0 Rin 2 MOC3031M 5 SCR 4 MOC3032M X MOC3033M SCR M 3 4 180 — 6 R2 D2 -P i n LOAD D I P Figure 16. Inverse-Parallel SCR Driver Circuit Z (MOC3031M, MOC3032M, MOC3033M) e r o - C Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors, R1 r o and R2, are optional 1kΩ. s s T r i a c D r i v 240 VAC e r R1 D1 O u V 1 6 tp CC u Rin 2 MOC3041M 5 SCR t O MOC3042M p MOC3043M SCR 360 to 3 4 c o u R2 D2 p l e LOAD r ( 2 5 0 Figure 17. Inverse-Parallel SCR Driver Circuit / 4 (MOC3041M, MOC3042M, MOC3043M) 0 0 V o Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors, l t R1 and R2, are optional 330Ω. P e Note: a This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 8

M O Reflow Profile C 3 0 3 300 X 260°C M 280 , 260 M >245°C = 42 Sec O 240 C 3 220 0 4 200 X M 180 Time above — 160 183°C = 90 Sec °C 6 140 - P 120 in 100 1.822°C/Sec Ramp up rate D I P 80 Z 60 e r o 40 - C 33 Sec 20 r o 0 s s 0 60 120 180 270 360 T Time (s) ri a c Figure 18. Reflow Profile D r i v e r O u t p u t O p t o c o u p l e r ( 2 5 0 / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 9

M O Ordering Information(5) C 3 0 Part Number Package Packing Method 3 X MOC3031M DIP 6-Pin Tube (50 Units) M , MOC3031SM SMT 6-Pin (Lead Bend) Tube (50 Units) M O MOC3031SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) C MOC3031VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 3 0 4 MOC3031SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) X M MOC3031SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) — MOC3031TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 6 Note: - P 5. The product orderable part number system listed in this table also applies to the MOC3032M, MOC3033M, in MOC3041M, MOC3042M, and MOC3043M product families. D I P Z Marking Information e r o - C r o 1 s s T r MOC3031 2 i a c D V X YY Q 6 r i v e r O 3 4 5 u t p u Figure 19. Top Mark t O p Top Mark Definitions t o c 1 Fairchild Logo o u 2 Device Number p l e DIN EN/IEC60747-5-5 Option (only appears on component r 3 ordered with this option) ( 2 5 4 One-Digit Year Code, e.g., ‘5’ 0 / 4 5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’ 0 0 6 Assembly Package Code V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 10

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MOC3041SVM MOC3041TVM MOC3041SM MOC3041M MOC3041VM MOC3041SR2VM MOC3041SR2M