Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M O C August 2015 2 0 x M , M MOC205M, MOC206M, MOC207M, O C MOC211M, MOC212M, MOC213M, MOC216M, MOC217M 2 1 x 8-pin SOIC Single-Channel Phototransistor Output M — Optocoupler 8 - p i Features Description n S • Closely Matched Current Transfer Ratios These devices consist of a gallium arsenide infrared O I emitting diode optically coupled to a monolithic silicon C • Minimum BV of 70 V Guaranteed CEO phototransistor detector, in a surface mountable, small S – MOC205M, MOC206M, MOC207M outline, plastic package. They are ideally suited for in • Minimum BVCEO of 30 V Guaranteed high-density applications, and eliminate the need for g l – MOC211M, MOC212M, MOC213M, MOC216M, through-the-board mounting. e - MOC217M C h • Low LED Input Current Required for Easier Logic a n Interfacing n – MOC216M, MOC217M e l • Convenient Plastic SOIC-8 Surface Mountable P h Package Style, with 0.050" Lead Spacing o • Safety and Regulatory Approvals: to t – UL1577, 2,500 VAC for 1 Minute r RMS a – DIN-EN/IEC60747-5-5, 565 V Peak Working n s Insulation Voltage i s t o Applications r O • Feedback Control Circuits u t • Interfacing and Coupling Systems of Different p u Potentials and Impedances t • General Purpose Switching Circuits O p • Monitor and Detection Circuits t o c o Schematic Package Outline u p l e r ANODE 1 8 N/C CATHODE 2 7 BASE Figure 2. Package Outline N/C 3 6 COLLECTOR N/C 4 5 EMITTER Figure 1. Schematic ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5

M O Safety and Insulation Ratings C 2 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 0 x data. Compliance with the safety ratings shall be ensured by means of protective circuits. M , Parameter Characteristics M O Installation Classifications per DIN VDE < 150 VRMS I–IV C 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–III 2 RMS 1 Climatic Classification 55/100/21 x M Pollution Degree (DIN VDE 0110/1.89) 2 — Comparative Tracking Index 175 8 - p i n S Symbol Parameter Value Unit O I Input-to-Output Test Voltage, Method A, V x 1.6 = V , C Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 904 Vpeak S m V i PR n Input-to-Output Test Voltage, Method B, V x 1.875 = V , IORM PR 1060 V g 100% Production Test with t = 1 s, Partial Discharge < 5 pC peak l m e - V Maximum Working Insulation Voltage 565 V C IORM peak h V Highest Allowable Over-Voltage 4000 V a IOTM peak n External Creepage ≥ 4 mm n e External Clearance ≥ 4 mm l P DTI Distance Through Insulation (Insulation Thickness) ≥ 0.4 mm h o TS Case Temperature(1) 150 °C to t IS,INPUT Input Current(1) 200 mA ra n PS,OUTPUT Output Power(1) 300 mW s i RIO Insulation Resistance at TS, VIO = 500 V(1) > 109 Ω st o r Note: O 1. Safety limit values – maximum values allowed in the event of a failure. u t p u t O p t o c o u p l e r ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 2

M O Absolute Maximum Ratings C 2 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 0 x operable above the recommended operating conditions and stressing the parts to these levels is not recommended. M In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. , The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified. M A O Symbol Rating Value Unit C 2 TOTAL DEVICE 1 x M T Storage Temperature -40 to +125 °C STG — T Ambient Operating Temperature -40 to +100 °C A 8 TJ Junction Temperature -40 to +125 °C -p TSOL Lead Solder Temperature 260 for 10 seconds °C in Total Device Power Dissipation @ T = 25°C 240 mW S P A O D Derate above 25°C 2.94 mW/°C IC EMITTER S i n I Continuous Forward Current 60 mA F g l I (pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A e F - C V Reverse Voltage 6.0 V R h a LED Power Dissipation @ TA = 25°C 90 mW n PD n Derate above 25°C 0.8 mW/°C e l DETECTOR P h IC Continuous Collector Current 150 mA o t V Collector-Emitter Voltage 30 V o CEO t r V Emitter-Collector Voltage 7 V a ECO n Detector Power Dissipation @ T = 25°C 150 mW s A i P s D Derate above 25°C 1.76 mW/°C to r O u t p u t O p t o c o u p l e r ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 3

M O Electrical Characteristics C 2 TA = 25°C unless otherwise specified. 0 x M Symbol Parameter Test Conditions Min. Typ. Max. Unit , M EMITTER O Input Forward Voltage C 2 MOC216M, MOC217M I = 1 mA 1.07 1.3 V 1 V F x F M MOC205M, MOC206M, MOC207M I = 10 mA 1.15 1.5 V MOC211M, MOC212M, MOC213M F — I Reverse Leakage Current V = 6 V 0.001 100 µA 8 R R - p CIN Input Capacitance 18 pF in DETECTOR S O ICEO1 Collector-Emitter Dark Current VCE = 10 V, TA = 25°C 1.0 50 nA IC ICEO2 VCE = 10 V, TA = 100°C 1.0 µA S i Collector-Emitter Breakdown Voltage n g BV MOC205M, MOC206M, MOC207M IC = 100 µA 70 100 V le CEO - MOC211M, MOC212M, MOC213M, C MOC216M, MOC217M IC = 100 µA 30 100 V h a n BVCBO Collector-Base Breakdown Voltage IC = 10 µA 70 120 V n e BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7 10 V l P CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 7 pF h o COUPLED t o t Collector-Output Current r a MOC205M I = 10 mA, V = 10 V 40 80 % n F CE s i MOC206M I = 10 mA, V = 10 V 63 125 % s F CE t o MOC207M IF = 10 mA, VCE = 10 V 100 200 % r O CTR MOC211M I = 10 mA, V = 10 V 20 % F CE u t MOC212M IF = 10 mA, VCE = 10 V 50 % p u MOC213M I = 10 mA, V = 10 V 100 % t F CE O MOC216M IF = 1 mA, VCE = 5 V 50 % p t MOC217M I = 1 mA, V = 5 V 100 % o F CE c Collector-Emitter Saturation Voltage o u MOC205M, MOC206M, MOC207M p VCE(SAT) MOC211M, MOC212M, MOC213M IC = 2 mA, IF = 10 mA 0.4 V le r MOC216M, MOC217M I = 100 µA, I = 1 mA 0.4 V C F I = 2 mA, V = 10 V, t Turn-On Time C CC 7.5 µs on R = 100 Ω (Figure 12) L I = 2 mA, V = 10 V, t Turn-Off Time C CC 5.7 µs off R = 100 Ω (Figure 12) L I = 2 mA, V = 10 V, t Rise Time C CC 3.2 µs r R = 100 Ω (Figure 12) L I = 2 mA, V = 10 V, t Fall Time C CC 4.7 µs f R = 100 Ω (Figure 12) L ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 4

M O Isolation Characteristics C 2 Symbol Characteristic Test Conditions Min. Typ. Max. Unit 0 x V Input-Output Isolation Voltage t = 1 Minute 2500 VAC M ISO RMS , CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF M R Isolation Resistance V = ±500 VDC, T = 25°C 1011 Ω O ISO I-O A C 2 1 x M — 8 - p i n S O I C S i n g l e - C h a n n e l P h o t o t r a n s i s t o r O u t p u t O p t o c o u p l e r ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 5

M O Typical Performance Curves C 2 0 1.8 D) 10 xM E 1.7 MALIZ , M V) 1.6 OR O V – FORWARD VOLTAGE (F 1111....2345 TTAA == –2555°C°C COLLECTOR CURRENT (N 0.11 VNCOER =M 5A LVIZED TO IF = 10 mA C21xM — 8- 1.1 TA = 100°C TPUT pin 1.01 10 100 – OUC SO IF – LED FORWARD CURRENT (mA) I IC Figure 3. LED Forward Voltage vs. Forward Current 0.010.1 1 10 100 S IF – LED INPUT CURRENT (mA) in g Figure 4. Output Curent vs. Input Current l e 10 - C NORMALIZED) MALIZED) 11..46 hanne ENT ( NOR 1.2 l P CTOR CURR 1 R CURRENT ( 01..80 hototr PUT COLLE COLLECTO 00..46 ansis I – OUTC0.1 NORMALIZED TO TA = 25°C I – OUTPUT C 00..02 NIF O= R1M0 AmLAIZED TO VCE = 5 V tor Out -80 -60 -40 -20 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10 p TA – AMBIENT TEMPERATURE (°C) VCE – COLLECTOR-EMITTER VOLTAGE (V) ut Figure 5. Output Current vs. Ambient Temperature Figure 6. Output Current vs. Collector-Emitter Voltage O p t 10000 o c 1.0 A) o n u ENT ( 1000 VCE = 10 V 0.9 IF = 20 mA pl R 0.8 e UR r C K 0.7 R R -EMITTER DA 10100 MALIZED CTR 000...456 IIFF == 51 0m mAA O R CT NO 0.3 E L L – CO 1 0.2 VCE = 5 V, TA = 25°C O 0.1 Normalized to: ICE CTR at RBE = Open 0.0 0.1 10 100 1000 0 20 40 60 80 100 TA – AMBIENT TEMPERATURE (°C) RBE – BASE RESISTANCE (kΩ) Figure 7. Dark Current vs. Ambient Temperature Figure 8. CTR vs. RBE (Unsaturated) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 6

M O Typical Performance Curves (Continued) C 2 0 1.0 4.0 x VCC = 10 V M R 000...789 IF = 20 m A 33..05 NtIRCoLOn = =AR 2 TM1 m0RA0LABΩIEZ =E DO PTOEN : , MOC D CT 0.6 IF = 10 mA D ton 2.5 21x ORMALIZE 00..45 IF = 5 mA ORMALIZE 12..50 M — 8 N 0.3 N - p 1.0 i 0.2 n 0.1 VCE = 0.3 V, TA = 25°C 0.5 S Normalized to: O 0.0 CTR at RBE = Open 0.0 IC 10 100 1000 0.01 0.1 1 10 100 S RBE – BASE RESISTANCE (kΩ ) RBE – BASE RESISTANCE (M Ω) in g Figure 9. CTR vs. RBE (Saturated) Figure 10. Normalized ton vs. RBE le - C h a 1.6 n VCC = 10 V n 1.4 IC = 2 mA e RL = 100 Ω l P NORMALIZED TO : 1.2 tofff AT RBE = OPEN ho D tofff 1.0 tot E r Z a LI 0.8 n A M s R i O 0.6 s N t o 0.4 r O u 0.2 t p u 0.0 t 0.01 0.1 1 10 100 O RBE – BASE RESISTANCE (MΩ) p t o Figure 11. Normalized toff vs. RBE c o u p l e r TEST CIRCUIT WAVEFORMS VCC = 10 V INPUT PULSE IF IC RL 10% INPUT OUTPUT OUTPUT PULSE 90% RBE tr tf ton toff Adjust IF to produce IC = 2 mA Figure 12. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 7

M O Reflow Profile C 2 0 Max. Ramp-up Rate = 3°C/S x TP Max. Ramp-down Rate = 6°C/S M 260 , 240 tP M TL O 220 C 200 Tsmax 2 C) 180 Preheat Area tL 1x M °e ( 160 Tsmin — r 140 atu 120 ts 8- r p e 100 i p n m 80 S e O T 60 I C 40 S 20 i n 0 g l 120 240 360 e - C Time 25°C to Peak h a Time (seconds) n n e Figure 13. Reflow Profile l P h Profile Freature Pb-Free Assembly Profile o t o Temperature Minimum (Tsmin) 150°C t r a Temperature Maximum (Tsmax) 200°C n s Time (tS) from (Tsmin to Tsmax) 60–120 seconds is t Ramp-up Rate (tL to tP) 3°C/second maximum o r Liquidous Temperature (TL) 217°C O u Time (tL) Maintained Above (TL) 60–150 seconds t p Peak Body Package Temperature 260°C +0°C / –5°C u t Time (t ) within 5°C of 260°C 30 seconds O P p Ramp-down Rate (T to T ) 6°C/second maximum t P L o c Time 25°C to Peak Temperature 8 minutes maximum o u p l e r ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 8

M O Ordering Information(2) C 2 Part Number Package Packing Method 0 x M MOC205M Small Outline 8-Pin Tube (100 Units) , MOC205R2M Small Outline 8-Pin Tape and Reel (2500 Units) M O MOC205VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) C 2 MOC205R2VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) 1 x Note: M 2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products. — 8 - p i n Marking Information S O 1 IC S i n g 205 2 l e - C h V X YY S 6 a n n e l P h o t 3 4 5 o t r a n Figure 14. Top Mark s i s t o r Table 1. Top Mark Definitions O u 1 Fairchild Logo t p u 2 Device Number t O 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) p 4 One-Digit Year Code, e.g., “4” to c 5 Digit Work Week, Ranging from “01” to “53” o u 6 Assembly Package Code p l e r ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC20xM, MOC21xM Rev. 1.5 9

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