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MMSD103T1G产品简介:
ICGOO电子元器件商城为您提供MMSD103T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMSD103T1G价格参考¥0.30-¥1.54。ON SemiconductorMMSD103T1G封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 250V 200mA(DC) SOD-123。您可以下载MMSD103T1G参考资料、Datasheet数据手册功能说明书,资料中有MMSD103T1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SWITCHING 250V 0.2A SOD123二极管 - 通用,功率,开关 250V 200mA |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,二极管 - 通用,功率,开关,ON Semiconductor MMSD103T1G- |
数据手册 | |
产品型号 | MMSD103T1G |
PCN组件/产地 | |
PCN设计/规格 | |
不同If时的电压-正向(Vf) | 1.25V @ 200mA |
不同 Vr、F时的电容 | 5pF @ 0V,1MHz |
不同 Vr时的电流-反向漏电流 | 1µA @ 200V |
二极管类型 | 标准 |
产品 | Switching Diodes |
产品目录页面 | |
产品种类 | 二极管 - 通用,功率,开关 |
供应商器件封装 | SOD-123 |
其它名称 | MMSD103T1GOSDKR |
包装 | Digi-Reel® |
反向恢复时间(trr) | 50ns |
商标 | ON Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SOD-123 |
封装/箱体 | SOD-123 |
峰值反向电压 | 250 V |
工作温度-结 | -55°C ~ 150°C |
工作温度范围 | - 55 C to + 150 C |
工厂包装数量 | 3000 |
恢复时间 | 50 ns |
最大反向漏泄电流 | 1 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 0.625 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
正向电压下降 | 1.25 V |
正向连续电流 | 0.2 A |
热阻 | 174°C/W Jl |
电压-DC反向(Vr)(最大值) | 250V |
电流-平均整流(Io) | 200mA(DC) |
系列 | MMSD103 |
速度 | 小信号 =< 200mA(Io),任意速度 |
配置 | Single |
MMSD103T1G, SMMSD103T1G High Voltage Switching Diode Features http://onsemi.com AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOD−123 CASE 425 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Continuous Reverse Voltage VR 250 V Cathode Anode Peak Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 625 mA MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Value Unit 1 JS M(cid:2) (cid:2) Forward Power Dissipation, FR−5 Board PF (Note 1) @ TA = 25C 400 mW Derate above 25C 3.2 mW/C JS = Device Code Thermal Resistance, R(cid:2)JL C/W M = Date Code Junction−to−Case 174 (cid:2) = Pb−Free Package Thermal Resistance, R(cid:2)JA C/W (Note: Microdot may be in either location) Junction−to−Ambient 492 Junction and Storage TJ, Tstg −55 to +150 C ORDERING INFORMATION Temperature Range Device Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MMSD103T1G SOD−123 3,000 / Tape & Reel Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. SMMSD103T1G SOD−123 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2011 − Rev. 6 MMSD103T1/D
MMSD103T1G, SMMSD103T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current IR (cid:3)A (VR = 200 V) − 1.0 (VR = 200 V, TJ = 150C) − 100 Reverse Breakdown Voltage V(BR) V (IBR = 100 (cid:3)A) 250 − Forward Voltage VF mV (IF = 100 mA) − 1000 (IF = 200 mA) − 1250 Diode Capacitance CD pF (VR = 0, f = 1.0 MHz) − 5.0 Reverse Recovery Time trr ns (IF = IR = 30 mA, RL = 100 (cid:4)) − 50 820 (cid:4) +10 V 2.0 k 0.1 (cid:3)F tr tp t IF 100 (cid:3)H IF 10% trr t 0.1 (cid:3)F D.U.T. 90% 50 (cid:4) OUTPUT 50 (cid:4) INPUT IR(REC) = 3.0 mA IR PULSE SAMPLING VR OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k(cid:4) variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2
MMSD103T1G, SMMSD103T1G 1200 7000 TA = −55C 6000 V)1000 25C A)5000 TA = 150C m n4000 GE ( 800 NT (3000 A 150C E T R L R O 600 U 6 V C D E 5 R S A 400 R 4 W E R V 3 FO 200 RE 2 TA = 25C 1 TA = −55C 1 0 1 10 100 1000 1 2 5 10 20 50 100 200300 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 0.75 0.7 F) p E ( 0.65 C N 0.6 A T CI 0.55 A P A 0.5 C E 0.45 D O DI 0.4 , d C 0.35 0.3 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance http://onsemi.com 3
MMSD103T1G, SMMSD103T1G PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G D A NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI A1 Y14.5M, 1982. 2.CONTROLLING DIMENSION: INCH. ÂÂ1ÂÂ MILLIMETERS INCHES ÂÂÂÂ DIM MIN NOM MAX MIN NOM MAX A 0.94 1.17 1.35 0.037 0.046 0.053 A1 0.00 0.05 0.10 0.000 0.002 0.004 b 0.51 0.61 0.71 0.020 0.024 0.028 HE E c --- --- 0.15 --- --- 0.006 D 1.40 1.60 1.80 0.055 0.063 0.071 E 2.54 2.69 2.84 0.100 0.106 0.112 HE 3.56 3.68 3.86 0.140 0.145 0.152 L 0.25 --- --- 0.010 --- --- (cid:2) 0 --- 10 0 --- 10 2 (cid:2) STYLE 1: b L PIN 1. CATHODE 2. ANODE C SOLDERING FOOTPRINT* 0.91 0.036 ÉÉ ÉÉ ÉÉ ÉÉ 1.22 0.048 ÉÉ ÉÉ 2.36 0.093 4.19 0.165 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MMSD103T1/D 4
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