MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power http://onsemi.com switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 300 mA, 60 VOLTS package which is designed for medium power surface mount R = 1.7 (cid:2) applications. DS(on) Features N−Channel • Silicon Gate for Fast Switching Speeds D • Low Drive Requirement • The SOT−223 Package can be Soldered Using Wave or Reflow • The Formed Leads Absorb Thermal Stress During Soldering G Eliminating the Possibility of Damage to the Die • Pb−Free Package is Available S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 4 Rating Symbol Value Unit TO−261AA CASE 318E Drain−to−Source Voltage VDS 60 V 1 2 STYLE 3 Gate−to−Source Voltage − Non−Repetitive VGS ±30 V 3 Drain Current ID 300 mAdc MARKING DIAGRAM AND Total Power Dissipation @ TA = 25°C PD 0.8 W PIN ASSIGNMENT (Note 1) Derate above 25°C 6.4 mW/°C 4 Drain Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C AYW THERMAL CHARACTERISTICS FT960(cid:2) (cid:2) Thermal Resistance, Junction−to−Ambient R(cid:2)JA 156 °C/W Maximum Temperature for Soldering TL 260 °C 1 2 3 Purposes Gate Drain Source Time in Solder Bath 10 S A = Assembly Location Maximum ratings are those values beyond which device damage can occur. Y = Year Maximum ratings applied to the device are individual stress limit values (not W = Work Week normal operating conditions) and are not valid simultaneously. If these limits are (cid:2) = Pb−Free Package exceeded, device functional operation is not implied, damage may occur and reliability may be affected. FT960 = Device Code (Note: Microdot may be in either location) 1. Device mounted on a FR−4 glass epoxy printed circuit board using minimum recommended footprint. ORDERING INFORMATION Device Package Shipping† MMFT960T1 SOT−223 1000 Tape & Reel MMFT960T1G SOT−223 1000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: January, 2006 − Rev. 5 MMFT960T1/D

MMFT960T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS 60 − − Vdc (VGS = 0, ID = 10 (cid:3)A) Zero Gate Voltage Drain Current IDSS − − 10 (cid:3)Adc (VDS = 60 V, VGS = 0) Gate−Body Leakage Current IGSS − − 50 nAdc (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 1.0 − 3.5 Vdc (VDS = VGS, ID = 1.0 mAdc) Static Drain−to−Source On−Resistance RDS(on) − − 1.7 (cid:4) (VGS = 10 Vdc, ID = 1.0 A) Drain−to−Source On−Voltage VDS(on) Vdc (VGS = 10 V, ID = 0.5 A) − − 0.8 (VGS = 10 V, ID = 1.0 A) − − 1.7 Forward Transconductance gfs − 600 − mmhos (VDS = 25 V, ID = 0.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Ciss − 65 − pF Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Coss − 33 − Transfer Capacitance Crss − 7.0 − Total Gate Charge Qg − 3.2 − nC Gate−Source Charge (VGS = 10 V, ID = 1.0 A, VDS = 48 V) Qgs − 1.2 − Gate−Drain Charge Qgd − 2.0 − 2. Pulse Test: Pulse Width ≤300 (cid:3)s, Duty Cycle ≤2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 5 1 TJ = 25°C TJ = −(cid:2)55°C TJ = 25°C S) 4 S) 0.8 P P NT (AM 3 VGS = 10 V 8 V NT (AM 0.6 TJ = 125°C E E R R UR 7 V UR C C N 2 N 0.4 AI 6 V AI DR DR VDS = 10 V I, D 1 5 V I, D 0.2 4 V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics http://onsemi.com 2

MMFT960T1 TYPICAL ELECTRICAL CHARACTERISTICS S) 5 ED) 10 M Z CE (OH 4 VGS = 10 V ORMALI IVDG =S 1= A10 V N N RESISTA 3 TANCE ( RCE TJ = 125°C ESIS 1 U R O 2 E S C AIN− 25°C OUR R S D 1 − , n) AIN o R S( −(cid:2)55°C D RD 0 , n) 0.1 0 0.5 1 1.5 2 2.5 S(o −(cid:2)75 −(cid:2)50 −(cid:2)25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (AMPS) RD TJ, JUNCTION TEMPERATURE (°C) Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance Variation with Temperature 250 225 VGS = 0 V f = 1 MHz PS) 200 TJ = 25°C NT (AM 1 E (pF) 115705 E C R N N CUR TJ = 125°C TJ = 25°C PACITA 110205 I, DRAID 0.1 C, CA 5705 Coss Ciss 25 Crss 0 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 VSD, SOURCE−DRAIN DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 5. Source−Drain Diode Forward Voltage Figure 6. Capacitance Variation S) 10 2 T OLTAGE (VOL 987 ITDJ == 12 5A°C VDS = 30 V NCE (mhos) 1.5 VDS = 10 V E V 6 VDS = 48 V CTA C U R 5 D 1 SOU 4 CON TJ = −(cid:2)55°C − S O N T 3 A , GATE−S 21 g, TRFS 0.5 125°C 25°C G V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) ID, DRAIN CURRENT (AMPS) Figure 7. Gate Charge versus Gate−to−Source Voltage Figure 8. Transconductance http://onsemi.com 3

MMFT960T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI b1 Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX HE E A 1.50 1.63 1.75 0.060 0.064 0.068 1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004 b 0.60 0.75 0.89 0.024 0.030 0.035 b1 2.90 3.06 3.20 0.115 0.121 0.126 c 0.24 0.29 0.35 0.009 0.012 0.014 b D 6.30 6.50 6.70 0.249 0.256 0.263 E 3.30 3.50 3.70 0.130 0.138 0.145 e1 e 2.20 2.30 2.40 0.087 0.091 0.094 e e1 0.85 0.94 1.05 0.033 0.037 0.041 L1 1.50 1.75 2.00 0.060 0.069 0.078 (cid:3) C H(cid:3)E 60.7°0 7.−00 71.03°0 0.206°4 0.2−76 01.208°7 A STYLE 3: 0.08 (0003) PIN 1.GATE A1 2.DRAIN L1 3.SOURCE 4.DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 6.3 2.3 2.3 0.248 0.091 0.091 2.0 0.079 (cid:2) (cid:3) 1.5 mm SCALE 6:1 0.059 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com MMFT960T1/D 4