MMBZxxxALT1G Series, SZMMBZxxxALT1G Series Zener Diodes, 24 and 40 Watt Peak Power SOT−23 Dual Common Anode Zeners www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These SOT−23 devices are ideal for situations where board space is at a premium. CASE 318 STYLE 12 Features • SOT−23 Package Allows Either Two Separate Unidirectional CATHODE 1 Configurations or a Single Bidirectional Configuration • 3 ANODE Standard Zener Breakdown Voltage Range − 5.6 V to 47 V CATHODE 2 • Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional), per Figure 6 Waveform • MARKING DIAGRAM ESD Rating: − Class 3B (> 16 kV) per the Human Body Model − Class C (> 400 V) per the Machine Model • ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge XXXM(cid:2) • Maximum Clamping Voltage @ Peak Pulse Current (cid:2) • Low Leakage < 5.0 (cid:2)A 1 • Flammability Rating UL 94 V−0 • SZ Prefix for Automotive and Other Applications Requiring Unique XXX = Specific Device Code Site and Control Change Requirements; AEC−Q101 Qualified and M = Date Code PPAP Capable (cid:2) = Pb−Free Package • These Devices are Pb−Free and are RoHS Compliant (Note: Microdot may be in either location) Mechanical Characteristics ORDERING INFORMATION CASE: Void-free, transfer-molded, thermosetting plastic case See detailed ordering and shipping information on page 2 of FINISH: Corrosion resistant finish, easily solderable this data sheet. MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds DEVICE MARKING INFORMATION See specific marking information in the device marking Package designed for optimal automated board assembly column of the table on page 3 of this data sheet. Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. © Semiconductor Components Industries, LLC, 1996 1 Publication Order Number: August, 2016 − Rev. 20 MMBZ5V6ALT1/D

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G Ppk 24 W @ TL ≤ 25°C MMBZ12VALT1G thru MMBZ47VALT1G 40 Total Power Dissipation on FR−5 Board (Note 2) °PD° @ TA = 25°C 225 mW° Derate above 25°C 1.8 mW/°C Thermal Resistance Junction−to−Ambient R(cid:3)JA 556 °C/W Total Power Dissipation on Alumina Substrate (Note 3) °PD° @ TA = 25°C 300 °mW Derate above 25°C 2.4 mW/°C Thermal Resistance Junction−to−Ambient R(cid:3)JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 7. 2. FR−5 = 1.0 x 0.75 x 0.62 in. 3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. *Other voltages may be available upon request. ORDERING INFORMATION Device Package Shipping† MMBZ5V6ALT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SZMMBZ5V6ALT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) MMBZ5V6ALT3G SOT−23 10,000 / Tape & Reel (Pb−Free) MMBZ6VxALT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SZMMBZ6VxALT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) MMBZ6VxALT3G SOT−23 10,000 / Tape & Reel (Pb−Free) MMBZ9V1ALT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBZ9V1ALT13G SOT−23 10,000 / Tape & Reel (Pb−Free) MMBZxxVALT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SZMMBZxxVALT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) MMBZxxVALT3G SOT−23 10,000 / Tape & Reel (Pb−Free) SZMMBZxxVALT3G* SOT−23 10,000 / Tape & Reel (Pb−Free) SZMMBZxxVTALT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 2

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) I Symbol Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VC VBRVRWM VBR Breakdown Voltage @ IT IR VF V IT Test Current IT (cid:4)VBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF IPP ZZT Maximum Zener Impedance @ IZT IZK Reverse Current Uni−Directional Zener ZZK Maximum Zener Impedance @ IZK ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS Max Zener VC @ IPP Breakdown Voltage Impedance (Note 5) (Note 6) IR @ ZZT Device VRWM VRWM VBR (Note 4) (V) @ IT @ IZT ZZK @ IZK VC IPP (cid:2)VBR Device* Marking Volts (cid:3)A Min Nom Max mA (cid:5) (cid:5) mA V A mV/(cid:2)C MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − 8.7 2.76 2.80 MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − − 9.6 2.5 3.4 MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − − 14 1.7 7.5 (VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS IR @ Breakdown Voltage VC @ IPP (Note 6) Device VRWM VRWM VBR (Note 4) (V) @ IT VC IPP (cid:2)VBR Device* Marking Volts nA Min Nom Max mA V A mV/(cid:2)C MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3 MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8 MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4 MMBZ47VALT1G 47A 38 50 44.65 47 49.35 1.0 54 0.74 43.1 (VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS IR @ Breakdown Voltage VC @ IPP (Note 6) Device VRWM VRWM VBR (Note 4) (V) @ IT VC IPP (cid:2)VBR Device* Marking Volts nA Min Nom Max mA V A mV/(cid:2)C MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8 MMBZ47VTALT1G 47T 38 50 46.06 47 47.94 1.0 54 0.74 43.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. VBR measured at pulse test current IT at an ambient temperature of 25°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1.0 kHz. 6. Surge current waveform per Figure 6 and derate per Figure 7 *Include SZ-prefix devices where applicable. www.onsemi.com 3

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL CHARACTERISTICS 18 1000 S) T L 15 O 100 V GE ( 12 VOLTA @ I)RT 9 (nA)R10 N VB I 1 W( O 6 D K A 0.1 E 3 R B 0 0.01 −40 0 +50 +100 +150 −40 +25 +85 +125 TEMPERATURE (°C) TEMPERATURE (°C) Figure 1. Typical Breakdown Voltage Figure 2. Typical Leakage Current versus Temperature versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 320 60 280 50 F)240 F) p p E ( E ( 40 C200 C 27 V N N A 5.6 V A T160 T 30 CI CI A A P120 P A A 20 C 15 V C C, 80 C, 10 33 V 40 0 0 0 1 2 3 0 1 2 3 BIAS (V) BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage Figure 4. Typical Capacitance versus Bias Voltage (Upper curve for each voltage is unidirectional mode, (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) lower curve is bidirectional mode) 300 W) m250 N ( ALUMINA SUBSTRATE O TI200 A P SI S150 DI R E100 W O FR−5 BOARD P , D 50 P 0 0 25 50 75 100 125 150 175 TEMPERATURE (°C) Figure 5. Steady State Power Derating Curve www.onsemi.com 4

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL CHARACTERISTICS K 100 tr ≤ 10 (cid:2)s PAPUSE ALTSKHE AC TWU RPIDORTEIHNN T(Tt PW D) HEISEC RDAEEY FSTI HNTOEED OF PEA°= 25C 9800 E (%)100 PEAK VALUE−IPP50% OF IPP. NG IN % NT @ T A 7600 VALU HALF VALUE− IP2P ERATIURRE 5400 50 DC E R 30 SO tP ULER 20 PW K O 10 A 0 EP 0 P 0 1 2 3 4 0 25 50 75 100 125 150 175 200 t, TIME (ms) TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Waveform Figure 7. Pulse Derating Curve 100 100 RECTANGULAR RECTANGULAR R (W) WAVEFORM, TA = 25°C R (W) WAVEFORM, TA = 25°C E E BIDIRECTIONAL W BIDIRECTIONAL W O O P P E E RG 10 UNIDIRECTIONAL RG10 U U S S UNIDIRECTIONAL K K A A E E P P , k , k p p P P 1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 PW, PULSE WIDTH (ms) PW, PULSE WIDTH (ms) Figure 8. Maximum Non−repetitive Surge Figure 9. Maximum Non−repetitive Surge Power, P versus PW Power, P (NOM) versus PW pk pk Power is defined as VRSM x IZ(pk) where VRSM is Power is defined as VZ(NOM) x IZ(pk) where the clamping voltage at IZ(pk). VZ(NOM) is the nominal Zener voltage measured at the low test current used for voltage classification. www.onsemi.com 5

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series TYPICAL COMMON ANODE APPLICATIONS A dual junction common anode design in a SOT−23 when board space is at a premium. Two simplified examples package protects two separate lines using only one package. of ESD applications are illustrated below. This adds flexibility and creativity to PCB design especially Computer Interface Protection A KEYBOARD B TERMINAL FUNCTIONAL I/O C PRINTER DECODER D ETC. GND MMBZ5V6ALT1G THRU MMBZ47VALT1G Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O MMBZ5V6ALT1G THRU CLOCK MMBZ47VALT1G CONTROL BUS GND MMBZ5V6ALT1G THRU MMBZ47VALT1G www.onsemi.com 6

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 12: END VIEW PIN 1. CATHODE 2. CATHODE 3. ANODE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com MMBZ5V6ALT1/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MMBZ12VALT1G MMBZ15VALT1G MMBZ18VALT1G MMBZ20VALT1G MMBZ27VALT1G MMBZ33VALT1G MMBZ5V6ALT1G MMBZ5V6ALT3G MMBZ6V2ALT1G MMBZ6V8ALT1G MMBZ9V1ALT1G MMBZ27VALT3G SMMBZ33VALT3G SZMMBZ4252T1G