Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

MMBZxAL series Low capacitance unidirectional double ESD protection diodes Rev. 02 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStaticDischarge(ESD) protection diodes in a common anode configuration, encapsulated in a SOT23(TO-236AB) small Surface-Mounted Device(SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Type number Package Configuration NXP JEDEC MMBZ5V6AL SOT23 TO-236AB dual common anode MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 1.2 Features (cid:132) Unidirectional ESD protection of (cid:132) ESD protection up to30kV(contact twolines discharge) (cid:132) Bidirectional ESD protection of one line (cid:132) IEC61000-4-2; level4 (ESD) (cid:132) Low diode capacitance: C ≤280pF (cid:132) IEC61643-321 d (cid:132) Rated peak pulse power: P =40W (cid:132) AEC-Q101 qualified PPM (cid:132) Ultra low leakage current: I =5nA RM 1.3 Applications (cid:132) Computers and peripherals (cid:132) Automotive electronic control units (cid:132) Audio and video equipment (cid:132) Portable electronics (cid:132) Cellular handsets and accessories

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse standoff voltage RWM MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V MMBZ6V8AL - - 4.5 V MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.5 V MMBZ15VAL - - 12 V MMBZ18VAL - - 14.5 V MMBZ20VAL - - 17 V MMBZ27VAL - - 22 V MMBZ33VAL - - 26 V C diode capacitance f=1MHz; V =0V d R MMBZ5V6AL - 210 280 pF MMBZ6V2AL - 175 230 pF MMBZ6V8AL - 150 200 pF MMBZ9V1AL - 155 200 pF MMBZ10VAL - 130 170 pF MMBZ12VAL - 110 140 pF MMBZ15VAL - 85 105 pF MMBZ18VAL - 70 90 pF MMBZ20VAL - 65 80 pF MMBZ27VAL - 48 60 pF MMBZ33VAL - 45 55 pF 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 cathode(diode1) 3 3 2 cathode(diode2) 3 common anode 1 2 1 2 006aaa154 MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 2 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version MMBZ5V6AL - plastic surface-mounted package; 3leads SOT23 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 4. Marking Table 5. Marking codes Type number Marking code[1] MMBZ5V6AL RR* MMBZ6V2AL RS* MMBZ6V8AL RT* MMBZ9V1AL RU* MMBZ10VAL RV* MMBZ12VAL *H1 MMBZ15VAL *H2 MMBZ18VAL *H3 MMBZ20VAL *H4 MMBZ27VAL *H5 MMBZ33VAL *H6 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 3 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode P rated peak pulse power t =10/1000μs [1][2] PPM p MMBZ5V6AL - 24 W MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL - 40 W MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL I rated peak pulse current t =10/1000μs [1][2] PPM p MMBZ5V6AL - 3 A MMBZ6V2AL - 2.76 A MMBZ6V8AL - 2.5 A MMBZ9V1AL - 1.7 A MMBZ10VAL - 1.7 A MMBZ12VAL - 2.35 A MMBZ15VAL - 1.9 A MMBZ18VAL - 1.6 A MMBZ20VAL - 1.4 A MMBZ27VAL - 1 A MMBZ33VAL - 0.87 A Per device P total power dissipation T ≤25°C tot amb MMBZxAL series [3] - 265 mW MMBZ5V6AL [4] - 290 mW MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL [4] - 360 mW MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 4 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit T junction temperature - 150 °C j T ambient temperature −55 +150 °C amb T storage temperature −65 +150 °C stg [1] In accordance with IEC61643-321 (10/1000μs current waveform). [2] Measured from pin1or2 to pin3. [3] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standardfootprint. [4] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. T able 7. ESD maximum ratings T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Max Unit Per diode V electrostatic discharge IEC61000-4-2 [1][2] - 30 kV ESD voltage (contact discharge) machine model [2] - 2 kV [1] Device stressed with ten non-repetitive ESDpulses. [2] Measured from pin1or2 to pin3. Table 8. ESD standards compliance Standard Conditions Per diode IEC61000-4-2; level4 (ESD) >15kV(air); >8kV(contact) MIL-STD-883; class3 (human body model) >8kV MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 5 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 001aaa631 006aab319 IPP 150 100 % 90 % IPP (%) 100 100 % IPP; 10 μs 50 % IPP; 1000 μs 50 10 % 0 tr = 0.7 ns to 1 ns t 0 1.0 2.0 3.0 4.0 30 ns tp (ms) 60 ns Fig 1. 10/1000μs pulse waveform according to Fig 2. ESD pulse waveform according to IEC61643-321 IEC61000-4-2 MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 6 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 6. Thermal characteristics Table 9. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from junction in free air th(j-a) to ambient MMBZxAL series [1] - - 460 K/W MMBZ5V6AL [2] - - 420 K/W MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL [2] - - 340 K/W MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL R thermal resistance from junction [3] th(j-sp) to solder point MMBZ5V6AL - - 150 K/W MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL - - 50 K/W MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2. [3] Measured from pin1or2 to pin3. MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 7 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 7. Characteristics Table 10. Characteristics T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per diode V forward voltage I =10mA - - 0.9 V F F V reverse standoff voltage RWM MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V MMBZ6V8AL - - 4.5 V MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.5 V MMBZ15VAL - - 12 V MMBZ18VAL - - 14.5 V MMBZ20VAL - - 17 V MMBZ27VAL - - 22 V MMBZ33VAL - - 26 V I reverse leakage current RM MMBZ5V6AL V =3V - 0.24 5 μA RWM MMBZ6V2AL V =3V - 5 200 nA RWM MMBZ6V8AL V =4.5V - 10 300 nA RWM MMBZ9V1AL V =6V - 5 100 nA RWM MMBZ10VAL V =6.5V - 1 20 nA RWM MMBZ12VAL V =8.5V - 0.1 5 nA RWM MMBZ15VAL V =12V - 0.1 5 nA RWM MMBZ18VAL V =14.5V - 0.1 5 nA RWM MMBZ20VAL V =17V - 0.1 5 nA RWM MMBZ27VAL V =22V - 0.1 5 nA RWM MMBZ33VAL V =26V - 0.1 5 nA RWM V breakdown voltage BR MMBZ5V6AL I =20mA 5.32 5.6 5.88 V R MMBZ6V2AL I =1mA 5.89 6.2 6.51 V R MMBZ6V8AL I =1mA 6.46 6.8 7.14 V R MMBZ9V1AL I =1mA 8.65 9.1 9.56 V R MMBZ10VAL I =1mA 9.5 10 10.5 V R MMBZ12VAL I =1mA 11.4 12 12.6 V R MMBZ15VAL I =1mA 14.25 15 15.75 V R MMBZ18VAL I =1mA 17.1 18 18.9 V R MMBZ20VAL I =1mA 19 20 21 V R MMBZ27VAL I =1mA 25.65 27 28.35 V R MMBZ33VAL I =1mA 31.35 33 34.65 V R MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 8 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes Table 10. Characteristics …continued T =25°C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit C diode capacitance f=1MHz; V =0V d R MMBZ5V6AL - 210 280 pF MMBZ6V2AL - 175 230 pF MMBZ6V8AL - 150 200 pF MMBZ9V1AL - 155 200 pF MMBZ10VAL - 130 170 pF MMBZ12VAL - 110 140 pF MMBZ15VAL - 85 105 pF MMBZ18VAL - 70 90 pF MMBZ20VAL - 65 80 pF MMBZ27VAL - 48 60 pF MMBZ33VAL - 45 55 pF V clamping voltage [1][2] CL MMBZ5V6AL I =3A - - 8 V PPM MMBZ6V2AL I =2.76A - - 8.7 V PPM MMBZ6V8AL I =2.5A - - 9.6 V PPM MMBZ9V1AL I =1.7A - - 14 V PPM MMBZ10VAL I =1.7A - - 14.2 V PPM MMBZ12VAL I =2.35A - - 17 V PPM MMBZ15VAL I =1.9A - - 21 V PPM MMBZ18VAL I =1.6A - - 25 V PPM MMBZ20VAL I =1.4A - - 28 V PPM MMBZ27VAL I =1A - - 40 V PPM MMBZ33VAL I =0.87A - - 46 V PPM S temperature coefficient Z MMBZ5V6AL I =20mA - 1.7 - mV/K Z MMBZ6V2AL I =1mA - 2.1 - mV/K Z MMBZ6V8AL I =1mA - 3.2 - mV/K Z MMBZ9V1AL I =1mA - 5.4 - mV/K Z MMBZ10VAL I =1mA - 6.5 - mV/K Z MMBZ12VAL I =1mA - 8.2 - mV/K Z MMBZ15VAL I =1mA - 11 - mV/K Z MMBZ18VAL I =1mA - 14 - mV/K Z MMBZ20VAL I =1mA - 15.8 - mV/K Z MMBZ27VAL I =1mA - 23 - mV/K Z MMBZ33VAL I =1mA - 29.8 - mV/K Z [1] In accordance with IEC61643-321(10/1000μs current waveform). [2] Measured from pin1or2 to pin3. MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 9 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 103 006aab320 1.2 006aab321 PPPM PPPM (W) PPPM(25°C) 102 0.8 10 0.4 1 0 10−2 10−1 1 10 102 103 0 50 100 150 200 tp (ms) Tj (°C) Tamb=25°C unidirectional and bidirectional Fig 3. Rated peak pulse power as a function of Fig 4. Relative variation of rated peak pulse power as exponential pulse duration (rectangular a function of junction temperature; typical waveform); typical values values 006aab839 006aab840 250 150 Cd (pF) Cd (pF) 200 100 (1) 150 (3) (1) (4) (2) 50 (5) (2) 100 (6) (3) (2) (3) (4) 50 0 0 2 4 6 0 5 10 15 VR (V) VR (V) f=1MHz; Tamb=25°C f=1MHz; Tamb=25°C (1) MMBZ5V6AL: unidirectional (1) MMBZ10VAL: unidirectional (2) MMBZ5V6AL: bidirectional (2) MMBZ10VAL: bidirectional (3) MMBZ6V8AL: unidirectional (3) MMBZ15VAL: unidirectional (4) MMBZ6V8AL: bidirectional (4) MMBZ15VAL: bidirectional (5) MMBZ27VAL: unidirectional (6) MMBZ27VAL: bidirectional Fig 5. Diode capacitance as a function of reverse Fig 6. Diode capacitance as a function of reverse voltage; typical values voltage; typical values MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 10 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 103 006aab841 IRM (1) (nA) 102 10 (2) 1 (3) 10−1 10−2 (4) 10−3 10−4 −75 −25 25 75 125 175 Tamb (°C) (1) MMBZ5V6AL: V =3V RWM (2) MMBZ6V8AL: V =4.5V RWM (3) MMBZ9V1AL: V =6V RWM (4) MMBZ27VAL: V =22V RWM Fig 7. Reverse leakage current as a function of ambient temperature; typical values I IPPM IPP −VCL −VBR −VRWM −IRM V −VCL−VBR −VRWM IRIMR −IR −IRM VRWM VBR VCL −IR − + P-N − + −IPP −IPP −IPPM 006aab324 −IPPM 006aab325 Fig 8. V-Icharacteristics for a unidirectional Fig 9. V-Icharacteristics for a bidirectional ESDprotection diode ESDprotection diode MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 11 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 8. Application information The MMBZxAL series is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide a surge capability of 24W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL, MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40W per line, for a 10/1000μs waveform. line 1 to be protected line 1 to be protected line 2 to be protected MMBZxAL MMBZxAL GND GND unidirectional protection bidirectional protection of two lines of one line 006aab842 Fig 10. Typical application: ESD and transient voltage protection of data lines Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the MMBZxAL series as close to the input terminal or connector as possible. 2. The path length between the MMBZxAL series and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all PCB conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 12 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 10. Package outline 3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 0.38 0.09 1.9 Dimensions in mm 04-11-04 Fig 11. Package outline SOT23(TO-236AB) 11. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 MMBZ5V6AL SOT23 4mm pitch, 8mm tape and reel -215 -235 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] For further information and the availability of packing methods, see Section15. MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 13 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 12. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3×) (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 12. Reflow soldering footprint SOT23(TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 13. Wave soldering footprint SOT23(TO-236AB) MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 14 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 13. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes MMBZXAL_SER_2 20091210 Product data sheet - MMBZXVAL_SER_1 Modifications: • Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VALadded • Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG, MMBZ27VAL/DG, MMBZ33VAL/DG removed • Figure5 and 7: updated • Figure6: added • Figure10: updated • Section 14 “Legal information”: updated MMBZXVAL_SER_1 20080901 Product data sheet - - MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 15 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 14.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the information included herein and shall have no liability for the consequences of specified use without further testing or modification. use of such information. Limiting values — Stress above one or more limiting values (as defined in Short data sheet — A short data sheet is an extract from a full data sheet the Absolute Maximum Ratings System of IEC60134) may cause permanent with the same product type number(s) and title. A short data sheet is intended damage to the device. Limiting values are stress ratings only and operation of for quick reference only and should not be relied upon to contain detailed and the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale — NXP Semiconductors products are sold full data sheet shall prevail. subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, 14.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General — Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable. However, NXP Semiconductors does not give any representations or No offer to sell or license — Nothing in this document may be interpreted or warranties, expressed or implied, as to the accuracy or completeness of such construed as an offer to sell products that is open for acceptance or the grant, information and shall have no liability for the consequences of use of such conveyance or implication of any license under any copyrights, patents or information. other industrial or intellectual property rights. Right to make changes — NXP Semiconductors reserves the right to make Export control — This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice. This document supersedes and replaces all information supplied prior to the publication hereof. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use — NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 14.4 Trademarks to result in personal injury, death or severe property or environmental Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 16 of 17

MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 16. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 7 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Application information. . . . . . . . . . . . . . . . . . 12 9 Test information. . . . . . . . . . . . . . . . . . . . . . . . 12 9.1 Quality information . . . . . . . . . . . . . . . . . . . . . 12 10 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 13 11 Packing information . . . . . . . . . . . . . . . . . . . . 13 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 15 Contact information. . . . . . . . . . . . . . . . . . . . . 16 16 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 December 2009 Document identifier: MMBZXAL_SER_2