ICGOO在线商城 > 分立半导体产品 > 二极管 - 齐纳 - 阵列 > MMBZ5248BS-7-F
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MMBZ5248BS-7-F产品简介:
ICGOO电子元器件商城为您提供MMBZ5248BS-7-F由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMBZ5248BS-7-F价格参考¥0.45-¥0.58。Diodes Inc.MMBZ5248BS-7-F封装/规格:二极管 - 齐纳 - 阵列, Zener Diode Array 2 Independent 18V 200mW ±5% SOT-363。您可以下载MMBZ5248BS-7-F参考资料、Datasheet数据手册功能说明书,资料中有MMBZ5248BS-7-F 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE ZENER DUAL 18V SOT363稳压二极管 18V 200mW |
产品分类 | 二极管/齐纳阵列分离式半导体 |
品牌 | Diodes Incorporated |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,稳压二极管,Diodes Incorporated MMBZ5248BS-7-F- |
数据手册 | |
产品型号 | MMBZ5248BS-7-F |
PCN设计/规格 | |
RoHS指令信息 | http://diodes.com/download/4349 |
不同If时的电压-正向(Vf) | 900mV @ 10mA |
不同 Vr时的电流-反向漏电流 | 100nA @ 14V |
产品目录绘图 | |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SOT-363 |
其它名称 | MMBZ5248BS-FDICT |
功率-最大值 | 200mW |
功率耗散 | 200 mW |
包装 | 剪切带 (CT) |
商标 | Diodes Incorporated |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
容差 | ±5% |
封装 | Reel |
封装/外壳 | 6-TSSOP,SC-88,SOT-363 |
封装/箱体 | SOT-363 |
工作温度 | -65°C ~ 150°C |
工厂包装数量 | 3000 |
最大反向漏泄电流 | 100 nA |
最大工作温度 | + 150 C |
最大齐纳阻抗 | 21 Ohms |
最小工作温度 | - 65 C |
标准包装 | 1 |
电压-齐纳(标称值)(Vz) | 18V |
电压容差 | 5 % |
系列 | MMBZ5248B |
配置 | 2 个独立式 |
阻抗(最大值)(Zzt) | 21 欧姆 |
齐纳电压 | 18 V |
齐纳电流 | 7 mA |
MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features Mechanical Data • Planar Die Construction • Case: SOT-363 • Dual Isolated Zeners in Ultra-Small Surface Mount Package • Case Material: Molded Plastic. UL Flammability Classification • Ideally Suited for Automated Assembly Processes Rating 94V-0 • Lead Free/RoHS Compliant (Note 2) • Moisture Sensitivity: Level 1 per J-STD-020D • "Green" Device (Note 3 and 4) • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Polarity: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.006 grams (approximate) C1 NC A2 A1 NC C2 Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Forward Voltage @ IF = 10mA VF 0.9 V Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 200 mW Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Notes: 1. Mounted on FR4 PC Board with recommended pad layout which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBZ5221BS - MMBZ5259BS 1 of 4 June 2008 Document number: DS31039 Rev. 15 - 2 www.diodes.com © Diodes Incorporated
MMBZ5221BS - MMBZ5259BS Electrical Characteristics @TA = 25°C unless otherwise specified Maximum Zener Maximum Reverse Zener Voltage Range (Note 5) Impedance (Note 6) Leakage Current (Note 5) Type Marking Number Code VZ @ IZT IZT ZZT @ IZT =Z Z0K. 2@5m IZAK IR @ VR Nom (V) Min (V) Max (V) mA Ω μA V MMBZ5221BS KC1 2.4 2.28 2.52 20 30 1200 100 1.0 MMBZ5223BS KC3 2.7 2.57 2.84 20 30 1300 75 1.0 MMBZ5225BS KC5 3.0 2.85 3.15 20 30 1600 50 1.0 MMBZ5226BS KG1 3.3 3.14 3.47 20 28 1600 25 1.0 MMBZ5227BS KG2 3.6 3.42 3.78 20 24 1700 15 1.0 MMBZ5228BS KG3 3.9 3.71 4.10 20 23 1900 10 1.0 MMBZ5229BS KG4 4.3 4.09 4.52 20 22 2000 5.0 1.0 MMBZ5230BS KG5 4.7 4.47 4.94 20 19 1900 5.0 2.0 MMBZ5231BS KE1 5.1 4.85 5.36 20 17 1600 5.0 2.0 MMBZ5232BS KE2 5.6 5.32 5.88 20 11 1600 5.0 3.0 MMBZ5233BS KE3 6.0 5.70 6.30 20 7 1600 5.0 3.5 MMBZ5234BS KE4 6.2 5.89 6.51 20 7 1000 5.0 4.0 MMBZ5235BS KE5 6.8 6.46 7.14 20 5 750 3.0 5.0 MMBZ5236BS KF1 7.5 7.13 7.88 20 6 500 3.0 6.0 MMBZ5237BS KF2 8.2 7.79 8.61 20 8 500 3.0 6.5 MMBZ5238BS KF3 8.7 8.27 9.14 20 8 600 3.0 6.5 MMBZ5239BS KF4 9.1 8.65 9.56 20 10 600 3.0 7.0 MMBZ5240BS KF5 10 9.50 10.50 20 17 600 3.0 8.0 MMBZ5241BS KH1 11 10.45 11.55 20 22 600 2.0 8.4 MMBZ5242BS KH2 12 11.40 12.60 20 30 600 1.0 9.1 MMBZ5243BS KH3 13 12.35 13.65 9.5 13 600 0.5 9.9 MMBZ5245BS KH5 15 14.25 15.75 8.5 16 600 0.1 11 MMBZ5246BS KJ1 16 15.20 16.80 7.8 17 600 0.1 12 MMBZ5248BS KJ3 18 17.10 18.90 7.0 21 600 0.1 14 MMBZ5250BS KJ5 20 19.00 21.00 6.2 25 600 0.1 15 MMBZ5251BS KK1 22 20.90 23.10 5.6 29 600 0.1 17 MMBZ5252BS KK2 24 22.80 25.20 5.2 33 600 0.1 18 MMBZ5254BS KK4 27 25.65 28.35 5.0 41 600 0.1 21 MMBZ5255BS KK5 28 26.60 29.40 4.5 44 600 0.1 21 MMBZ5256BS KM1 30 28.50 31.50 4.2 49 600 0.1 23 MMBZ5257BS KM2 33 31.35 34.65 3.8 58 700 0.1 25 MMBZ5258BS KM3 36 34.20 37.80 3.4 70 700 0.1 27 MMBZ5259BS KM4 39 37.05 40.95 3.2 80 800 0.1 30 Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. f = 1KHz. MMBZ5221BS - MMBZ5259BS 2 of 4 June 2008 Document number: DS31039 Rev. 15 - 2 www.diodes.com © Diodes Incorporated
MMBZ5221BS - MMBZ5259BS 0.4 50 Tj = 25°C C5V6 6V8 W) 40 N ( 0.3 mA) 8V2 PATIO ENT ( 30 SI R S R DI 0.2 CU ER ER 20 W N O E P Z P, D 0.1 I, Z 10 Test 2C0umrrAent IZ 0 0 0 150 0 1 2 3 4 5 6 7 8 9 10 V , ZENER VOLTAGE (V) T , AMBIENT TEMPERATURE (°C) Z A Fig. 1 Power Derating Curve Fig. 2 Typical Zener Breakdown Characteristics 30 1,000 Tj = 25°C 10 12 F) T (mA) 20 15 Nominal ZVeonltearg Bereakdown NCE (p 100 0V BIAS N A E T R CI R 18 A CU Test current IZ AP R C E 22 L EN 10 27 OTA 10 Z I, Z 33 36 39 C, TT 0 1 0 10 20 30 40 1 10 100 V , ZENER VOLTAGE (V) Z V , NOMINAL ZENER VOLTAGE (V) Z Fig. 3 Typical Zener Breakdown Characteristics Fig. 4 Typical Total Capacitance vs. Nominal Zener Voltage 1,000 100 W) )Ω R ( E( E C 100 W N O A P D E PE G 10 M R U R I S E K EN 10 EA Z P , Z , K Z P P 1 1 1 10 100 1 10 100 1,000 V , ZENER VOLTAGE (V) PULSE WIDTH (ms) Z Fig. 5 Typical Zener Impedance Characteristics Fig. 6 Maximum Non-repetitive Surge Power MMBZ5221BS - MMBZ5259BS 3 of 4 June 2008 Document number: DS31039 Rev. 15 - 2 www.diodes.com © Diodes Incorporated
MMBZ5221BS - MMBZ5259BS Ordering Information (Note 7) Device Packaging Shipping (Type Number)-7-F SOT-363 3000/Tape & Reel *Add “-7” to the appropriate type number in Electrical Characteristics Table on Page 2. Example: 6.2V Zener = MMBZ5234BS-7-F. Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Kxx = Product Type Marking Code Kxx YM (See Electrical Characteristics Table) YM = Date Code Marking MY xxK Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Code P Q R S T U V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B C B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.40 0.45 H 1.80 2.20 H J 0 0.10 K 0.90 1.00 K M L 0.25 0.40 M 0.10 0.22 J α 0° 8° D F L All Dimensions in mm Suggested Pad Layout E E Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 G C Z Y 0.6 C 1.9 Y E 0.65 X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBZ5221BS - MMBZ5259BS 4 of 4 June 2008 Document number: DS31039 Rev. 15 - 2 www.diodes.com © Diodes Incorporated
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