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MMBTH10RG产品简介:
ICGOO电子元器件商城为您提供MMBTH10RG由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMBTH10RG价格参考¥0.44-¥0.44。Fairchild SemiconductorMMBTH10RG封装/规格:晶体管 - 双极 (BJT) - 射频, RF Transistor NPN 40V 50mA 450MHz 225mW Surface Mount SOT-23-3。您可以下载MMBTH10RG参考资料、Datasheet数据手册功能说明书,资料中有MMBTH10RG 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR RF NPN SOT23射频双极晶体管 NPN RF Transistor |
产品分类 | RF 晶体管 (BJT)分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,晶体管射频,射频双极晶体管,Fairchild Semiconductor MMBTH10RG- |
数据手册 | |
产品型号 | MMBTH10RG |
PCN封装 | |
PCN设计/规格 | |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 50 @ 1mA,6V |
产品种类 | 射频双极晶体管 |
供应商器件封装 | SOT-23-3 |
其它名称 | MMBTH10RGDKR |
功率-最大值 | 225mW |
功率耗散 | 225 mW |
包装 | Digi-Reel® |
单位重量 | 60 mg |
发射极-基极电压VEBO | 4 V |
商标 | Fairchild Semiconductor |
噪声系数(dB,不同f时的典型值) | - |
增益 | - |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
技术 | Silicon |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大工作温度 | + 150 C |
最大工作频率 | 450 MHz |
最大直流电集电极电流 | 0.05 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 40V |
电流-集电极(Ic)(最大值) | 50mA |
直流集电极/BaseGainhfeMin | 50 |
类型 | RF Bipolar Small Signal |
系列 | MMBTH10 |
配置 | Single |
集电极—发射极最大电压VCEO | 40 V |
集电极连续电流 | 0.045 A |
频率 | 450 MHz |
频率-跃迁 | 450MHz |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
M M B T H MMBTH10RG 1 0 R G NPN RF Transistor • This device is designed for use in low noise UHF/VHF amplifiers, with C collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E • Sourced from process 42. SOT-23 B Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 40 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector Current - Continuous 50 mA C T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Sustaining Voltage * I = 1.0 mA, I = 0 40 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 µA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 µA, I = 0 4.0 V (BR)EBO E C I Collector Cutoff Current V = 30 V, I = 0 100 nA CBO CB E On Characteristics h DC Current Gain I = 1.0 mA, V = 6.0 V 50 120 V FE C CE V Collector-Emitter Saturation Voltage I = 10 mA, I = 5.0 mA 0.2 V CE(sat) C B Small Signal Characteristics f Current Gain - Bandwidth Product I = 2.0 mA, V = 10 V, 450 MHz T C CE f = 100 MHz C Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 0.6 pF cb CB E rb’Cc Collector Base Time Constant I = 5.0 mA, V = 10 V, 12 pS C CB f = 79.8 MHz * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 225 mW D Derate above 25°C 1.8 mW/°C RθJA Thermal Resistance, Junction to Ambient 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1
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