MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon www.onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS SOT−23 (TO−236) Compliant CASE 318 STYLE 6 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit BASE 1 Collector−Emitter Voltage VCES 30 Vdc Collector−Base Voltage VCBO 30 Vdc Emitter−Base Voltage VEBO 10 Vdc EMITTER 2 Collector Current − Continuous IC 300 mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1x M(cid:2) Total Device Dissipation FR−5 Board PD (cid:2) (DNeoratete 1 a) bToAv =e 2255°°CC 212.85 mmWW/°C 1 Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W 1x =Device Code x = M for MMBTA13LT1G, Total Device Dissipation Alumina PD SMMBTA13LT1G Substrate, (Note 2) TA = 25°C 300 mW x = N for MMBTA14LT1G, Derate above 25°C 2.4 mW/°C SMMBTA14LT1G, T3G Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W M(cid:2) == PDba−teF Creoed Pe*ackage Junction and Storage Temperature TJ, Tstg −55 to +150 °C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation and/or overbar may device. If any of these limits are exceeded, device functionality should not be vary depending upon manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping† MMBTA13LT1G, SOT−23 3,000 / Tape & Reel SMMBTA13LT1G (Pb−Free) MMBTA14LT1G, SOT−23 3,000 / Tape & Reel SMMBTA14LT1G (Pb−Free) SMMBTA14LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 6 MMBTA13LT1/D

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = 100 (cid:3)Adc, VBE = 0) 30 − Collector Cutoff Current ICBO nAdc (VCB = 30 Vdc, IE = 0) − 100 Emitter Cutoff Current IEBO nAdc (VEB = 10 Vdc, IC = 0) − 100 ON CHARACTERISTICS (Note 3) DC Current Gain hFE − (IC = 10 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 5000 − MMBTA14, SMMBTA14 10,000 − (IC = 100 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 10,000 − MMBTA14, SMMBTA14 20,000 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 100 mAdc, IB = 0.1 mAdc) − 1.5 Base−Emitter On Voltage VBE Vdc (IC = 100 mAdc, VCE = 5.0 Vdc) − 2.0 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) fT MHz (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 125 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width (cid:2)300(cid:3)s, Duty Cycle (cid:2)2.0%. 4. fT = |hfe| • ftest. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25°C) CE A 500 2.0 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz RS ≈ 0 1.0 200 V) A) 0.7 GE (n 100 NT (p 0.5 IC = 1.0 mA TA 10 (cid:3)A RE 0.3 OL 50 UR 0.2 OISE V 100 (cid:3)A OISE C 0.1 100 (cid:3)A e, Nn 20 IC = 1.0 mA i, Nn 00..0075 10 (cid:3)A 10 0.03 5.0 0.02 10 20 50 100200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k 100(cid:2)k 10 20 50 100200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k 100(cid:2)k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 14 V) n BANDWIDTH = 10 Hz TO 15.7 kHz E ( 12 G A BANDWIDTH = 10 Hz TO 15.7 kHz T 100 OL B) 10 E V 70 IC = 10 (cid:3)A E (d 10 (cid:3)A S R OI U 8.0 N 50 G ND E FI 100 (cid:3)A DEBA 30 100 (cid:3)A NOIS 6.0 L WI 20 NF, 4.0 IC = 1.0 mA A OT 1.0 mA 2.0 T , T V 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 1.0 2.0 5.0 10 20 50 100 200 500 1000 RS, SOURCE RESISTANCE (k(cid:4)) RS, SOURCE RESISTANCE (k(cid:4)) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure www.onsemi.com 3

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L SMALL−SIGNAL CHARACTERISTICS 20 4.0 N VCE = 5.0 V 10 TJ = 25°C T GAI 2.0 fT =J =1 0205 °MCHz N F) E p R CITANCE ( 57..00 Cibo Cobo GNAL CUR 10..08 PA SI A - 0.6 C, C MALL 3.0 S 0.4 |, e hf | 2.0 0.2 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 6. Capacitance Figure 7. High Frequency Current Gain 200(cid:2)k S) 3.0 TJ = 125°C OLT TJ = 25°C V 100(cid:2)k E ( 2.5 AIN 7500(cid:2)(cid:2)kk 25°C LTAG IC = 10 mA 50 mA 250 mA 500 mA G O NT 30(cid:2)k R V 2.0 E E R T UR 20(cid:2)k MIT h, DC CFE 71.00(cid:2)(cid:2)kk -(cid:3)55°C ECTOR-E 1.5 5.0(cid:2)k VCE = 5.0 V OLL 1.0 C 3.0(cid:2)k , E 2.0(cid:2)k VC 0.5 5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5001000 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT ((cid:3)A) Figure 8. DC Current Gain Figure 9. Collector Saturation Region 1.6 -(cid:3)1.0 TJ = 25°C °V/C) *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C m 1.4 S ( -(cid:3)2.0 *R(cid:2)VC FOR VCE(sat) T VOLTS) 1.2 VBE(sat) @ IC/IB = 1000 FFICIEN -(cid:3)3.0 -(cid:3)55°C TO 25°C E ( OE G VBE(on) @ VCE = 5.0 V C 25°C TO 125°C LTA 1.0 RE -(cid:3)4.0 O U V, V RAT (cid:2)VB FOR VBE E P 0.8 M -(cid:3)5.0 -(cid:3)55°C TO 25°C VCE(sat) @ IC/IB = 1000 TE , V θ 0.6 R -(cid:3)6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages Figure 11. Temperature Coefficients www.onsemi.com 4

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L 1.0 0.7 D = 0.5 0.5 NT THERMALNORMALIZED) 00..32 0.2 0.1 0.05 SINGLE PULSE NSIENCE (00.0.17 SINGLE PULSE AA RT0.05 TS r(t), RESI0.03 Z(cid:2)JC(t) = r(t) • R(cid:2)JC(cid:4)TJ(pk) - TC = P(pk) Z(cid:2)JC(t) 0.02 Z(cid:2)JA(t) = r(t) • R(cid:2)JA(cid:4)TJ(pk) - TA = P(pk) Z(cid:2)JA(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0(cid:2)k 2.0(cid:2)k 5.0(cid:2)k 10(cid:2)k t, TIME (ms) Figure 12. Thermal Response 1.0(cid:2)k 700 1.0 ms A) 500 m NT ( 300 TA = 25°C TC = 25°C 100 (cid:3)s RE 200 1.0 s R U C R 100 O T 70 C LE 50 L O C 30 , C CURRENT LIMIT I 20 THERMAL LIMIT SECOND BREAKDOWN LIMIT 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area FIGURE A tP PP PP t1 1/f DUTY(cid:2)CYCLE(cid:3)t1(cid:2)f(cid:3)t1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data www.onsemi.com 5

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBTA13LT1/D 6

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