MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector−Emitter Voltage VCEO Vdc MMBTA05L 60 3 MMBTA06L 80 Collector−Base Voltage VCBO Vdc 1 MMBTA05L 60 2 MMBTA06L 80 SOT−23 Emitter−Base Voltage VEBO 4.0 Vdc CASE 318 Collector Current − Continuous IC 500 mAdc STYLE 6 Electrostatic Discharge ESD HBM Class 3B MM Class C MARKING DIAGRAMS CDM Class IV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1H M (cid:2) 1GM M (cid:2) (cid:2) (cid:2) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MMBTA05LT1 MMBTA06LT1, Total Device Dissipation FR−5 PD 225 mW SMMBTA06L Board (Note 1) TA = 25°C 1H, 1GM = Specific Device Code Derate above 25°C 1.8 mW/°C M = Date Code* (cid:2) = Pb−Free Package Thermal Resistance, R(cid:2)JA 556 °C/W (Note: Microdot may be in either location) Junction−to−Ambient *Date Code orientation and/or overbar may Total Device Dissipation Alumina PD 300 mW vary depending upon manufacturing location. Substrate, (Note 2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, R(cid:2)JA 417 °C/W ORDERING INFORMATION Junction−to−Ambient See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 10 MMBTA05LT1/D

MMBTA05L, MMBTA06L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBTA05L 60 − MMBTA06L 80 − Emitter−Base Breakdown Voltage V(BR)EBO 4.0 − Vdc (IE = 100 (cid:3)Adc, IC = 0) Collector Cutoff Current ICES − 0.1 (cid:3)Adc (VCE = 60 Vdc, IB = 0) Collector Cutoff Current ICBO (cid:3)Adc (VCB = 60 Vdc, IE = 0) MMBTA05L − 0.1 (VCB = 80 Vdc, IE = 0) MMBTA06L − 0.1 ON CHARACTERISTICS DC Current Gain hFE − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 − (IC = 100 mAdc, VCE = 1.0 Vdc) 100 − Collector−Emitter Saturation Voltage VCE(sat) − 0.25 Vdc (IC = 100 mAdc, IB = 10 mAdc) Base−Emitter On Voltage VBE(on) − 1.2 Vdc (IC = 100 mAdc, VCE = 1.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 4) fT 100 − MHz (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME -1.0 V VCC +VBB VCC +40 V +40 V 5.0 (cid:3)s 100 RL 100 RL +10 V OUTPUT OUTPUT Vin RB Vin RB 0 tr = 3.0 ns 5.0 (cid:3)F * CS (cid:3) 6.0 pF 5.0 (cid:3)F * CS (cid:3) 6.0 pF 100 100 5.0 (cid:3)s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits www.onsemi.com 2

MMBTA05L, MMBTA06L 1000 100 TH VCE = 2.0 V Cibo TA = 25°C DWID TA = 25°C pF) ANHz) E ( BM C AIN CT (100 TAN 10 Cobo GU CI T D A NO P ER A RP C UR C, C , u a ft 10 1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 2. Current Gain Bandwidth Product vs. Figure 3. Capacitance Collector Current 1.0 k 1000 700 TA = 150°C VCE = 1.0 V 500 300 ts AIN TA = 25°C G ns) 200 NT ME ( 100 RRE 100 TA = −55°C t, TI 5700 tf C CU D 30 VICC/ICB == 4100 V tr h, fe 20 IB1 = IB2 TJ = 25°C td @ VBE(off) = 0.5 V 10 10 5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain vs. Collector Current 1 1.2 R IC/IB = 10 1.1 IC/IB = 10 E V, COLLECTOR−EMITTCE(sat)SATURATION VOLTAGE (V)0.1 TA = 25T°AC = T−A5 5=° 1C50°C V, BASE−EMITTERBE(sat)SATURATION VOLTAGE (V) 00000001........59346780 TATT A=A =−= 5 21555°°C0C°C 0.01 0.2 0.1 1 10 100 1000 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Collector Emitter Saturation Voltage Figure 7. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current www.onsemi.com 3

MMBTA05L, MMBTA06L V) 1.1 1.0 LTAGE ( 0.91 VCE = 1 V TA = −55°C MITTERE (V) 0.8 50IC m =A 10I0C m=A 25I0C m=A TA = 25°C VO 0.8 −EAG IC = ER 0.7 TA = 25°C OROLT 0.6 500 mA , BASE−EMITTE(on) 00000.....65432 TA = 150°C V, COLLECTCE(sat)SATURATION V 00..42 10IC m =A B V 0.1 0 0.1 1 10 100 1000 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Base Emitter Turn−ON Voltage vs. Figure 9. Saturation Region Collector Current C) °mV/−0.8 10000 MMBTA06L T ( mA) 100 ms 10 ms CIEN−1.2 NT (1000 1 ms OEFFI−1.6 URRE Thermal Limit 1 s E C R C 100 UR−2.0 R(cid:2)VB for VBE TO T C A E PER−2.4 OLL 10 M C TE I, C Single Pulse at TA = 25°C , B−2.8 1 V (cid:2) 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 1 10 100 R IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Base−Emitter Temperature Figure 11. Safe Operating Area Coefficient 10000 MMBTA05L 100 ms A) 10 ms m T ( 1000 N 1 ms E R 1 s R U C R 100 Thermal Limit O T C E L L 10 O C , C I Single Pulse at TA = 25°C 1 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Safe Operating Area www.onsemi.com 4

MMBTA05L, MMBTA06L ORDERING INFORMATION Device Package Shipping† MMBTA05LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) NSVMMBTA05LT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) MMBTA05LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) MMBTA06LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) SMMBTA06LT1G* SOT−23 3,000 / Tape & Reel (Pb−Free) MMBTA06LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) SMMBTA06LT3G* SOT−23 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5

MMBTA05L, MMBTA06L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBTA05LT1/D 6

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MMBTA05LT1G MMBTA05LT3G MMBTA06LT1G MMBTA06LT3G SMMBTA06LT3G