MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 500 mAdc 3 THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Total Device Dissipation FR−5 Board PD (Note 1) TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C SOT−23 (TO−236) Thermal Resistance, Junction-to-Ambient R(cid:2)JA 556 °C/W CASE 318 (Note 1) STYLE 6 Total Device Dissipation Alumina PD Substrate (Note 2) TA = 25°C 300 mW MARKING DIAGRAM Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction-to-Ambient R(cid:2)JA 417 °C/W (Note 2) KB M(cid:2) (cid:2) Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be KB = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR−5 = 1.0 X 0.75 X 0.062 in. (cid:2) = Pb−Free Package 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT8099LT1G SOT−23 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2016 − Rev. 3 MMBT8099LT1/D

MMBT8099LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) 80 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) 80 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 6.0 − Collector Cutoff Current ICES (cid:3)Adc (VCE = 60 Vdc, IB = 0) − 0.1 Collector Cutoff Current ICBO (cid:3)Adc (VCB = 60 Vdc, IE = 0) − 0.1 (VCB = 80 Vdc, IE = 0) − − Emitter Cutoff Current IEBO (cid:3)Adc (VEB = 6.0 Vdc, IC = 0) − 0.1 (VEB = 4.0 Vdc, IC = 0) − − ON CHARACTERISTICS (Note 3) DC Current Gain hFE − (IC = 1.0 mAdc, VCE = 5.0 Vdc) 100 300 (IC = 10 mAdc, VCE = 5.0 Vdc) 100 − (IC = 100 mAdc, VCE = 5.0 Vdc) 75 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 100 mAdc, IB = 5.0 mAdc) − 0.4 (IC = 100 mAdc, IB = 10 mAdc) − 0.3 Base−Emitter On Voltage VBE(on) Vdc (IC = 1.0 mAdc, VCE = 5.0 Vdc) − − (IC = 10 mAdc, VCE = 5.0 Vdc) 0.6 0.8 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 150 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 6.0 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 25 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. www.onsemi.com 2

MMBT8099LT1G TURN-ON TIME TURN-OFF TIME -1.0 V VCC +VBB VCC +40 V +40 V 5.0 (cid:3)s 100 RL 100 RL +10 V OUTPUT OUTPUT Vin RB Vin RB 0 tr = 3.0 ns 5.0 (cid:3)F * CS (cid:3) 6.0 pF 5.0 (cid:3)F * CS (cid:3) 6.0 pF 100 100 5.0 (cid:3)s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits Hz) 300 40 M CT ( TJ = 25°C TJ = 25°C DU 200 DTH PRO VCE = 1.0 V 5.0 V E (pF) 20 Cibo WI C ND 100 TAN 10 N - BA 70 APACI 68..00 GAI C, C NT- 50 4.0 RE Cobo R U C 30 2.0 , T 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance 1.0 k 1.0 k 700 VCC = 40 V 700 500 IC/IB = 10 ts 500 IB1 = IB2 A) 300 TJ = 25°C T (m 300 200 EN 200 ns) RR t, TIME ( 1570000 tf ECTOR CU 1570000 CURRENT LIMIT L 30 COL 30 THERMAL LIMIT , SECOND BREAKDOWN LIMIT 20 tr IC 20 td @ VBE(off) = 0.5 V DUTY CYCLE ≤ 10% 10 10 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Switching Times Figure 5. Active−Region Safe Operating Area www.onsemi.com 3

MMBT8099LT1G 400 1.0 TJ = 25°C TJ = 125°C 0.8 25°C VBE(sat) @ IC/IB = 10 GAIN 200 -55°C LTS) ENT E (VO 0.6 VBE @ VCE = 5.0 V R G R A CU 100 LT 0.4 , DC E 80 VCE = 5.0 V V, VO hF 60 0.2 VCE(sat) @ IC/IB = 10 40 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages AGE (VOLTS) 21..06 20IC m =A 50IC m =A 10I0C m=A 20IT0CJ m= =A 25°C °NT (mV/ C) --11..04 T E VOL FICI R 1.2 EF -1.8 LLECTOR-EMITTE 00..84 EMPERATURE CO --22..26 R(cid:2)VB FOR VBE -55°C TO 125°C , COVCE 0 10IC m =A R, T(cid:2)VB -3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient 1.0 0.7 D = 0.5 0.5 T N 0.2 SIECE 0.3 D TRANSISTAN 0.2 00.0.15 Z(cid:2)JC(t) = r(t) • R(cid:2)JC r(t), NORMALIZETHERMAL RE 00000....0000.13275 SINGLE PULSE S0IN.0G2LE P0.U0L1SE P(pk) t1 t2 TZTDPSJ(cid:2)JOH C((JppOWAUkk())WE Rt--) RNV =TT E PARCrS( U Et==) AL A •PPSPD ((REpPp Tkk(cid:2) L)T)IJ Y MZZRA (cid:2)(cid:2)FEAJJO IACAN(R(Ttt)) t1 DUTY CYCLE, D = t1/t2 (SEE AN469) 0.01 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k t, TIME (ms) Figure 10. Thermal Response www.onsemi.com 4

MMBT8099LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 SIDE VIEW SEE VIEW C c STYLE 6: PIN 1. BASE END VIEW 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBT8099LT1/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MMBT8099LT1G