MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G Amplifier Transistors NPN Silicon www.onsemi.com Features COLLECTOR • 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1 • BASE These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 MAXIMUM RATINGS SOT−23 (TO−236) CASE 318 Rating Symbol 6428LT1 6429LT1 Unit 1 STYLE 6 Collector−Emitter Voltage VCEO 50 45 Vdc 2 Collector−Base Voltage VCBO 60 55 Vdc Emitter−Base Voltage VEBO 6.0 Vdc MARKING DIAGRAM Collector Current − Continuous IC 200 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XXX M(cid:2) assumed, damage may occur and reliability may be affected. (cid:2) THERMAL CHARACTERISTICS 1 Rating Symbol Value Unit XXX= Specific Device Code MMBT6428LT1 − 1KM T(DNoetoraatle tDe 1 ea) vbTicoAev = eD 22is55s°°CiCpation FR−5 Board PD 212.85 mmWW/°C M N= SDVa/tMe MCoBdTe6*429LT1 − M1L (cid:2) = Pb−Free Package Thermal Resistance, R(cid:2)JA 556 °C/W (Note: Microdot may be in either location) Junction−to−Ambient *Date Code orientation and/or overbar may Total Device Dissipation Alumina PD 300 mW vary depending upon manufacturing location. Substrate, (Note 2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, R(cid:2)JA 417 °C/W ORDERING INFORMATION Junction−to−Ambient Device Package Shipping† Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. MMBT6428LT1G SOT−23 3000 Tape & 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. (Pb−Free) Reel MMBT6429LT1G SOT−23 3000 Tape & (Pb−Free) Reel NSVMMBT6429LT1G SOT−23 3000 Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2017 − Rev. 8 MMBT6428LT1/D

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBT6428 50 − (IC = 1.0 mAdc, IB = 0) MMBT6429 / NSVMMBT6429 45 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 0.1 mAdc, IE = 0) MMBT6428 60 − (IC = 0.1 mAdc, IE = 0) MMBT6429 / NSVMMBT6429 55 − Collector Cutoff Current ICES (cid:3)Adc (VCE = 30 Vdc) − 0.1 Collector Cutoff Current ICBO (cid:3)Adc (VCB = 30 Vdc, IE = 0) − 0.01 Emitter Cutoff Current IEBO (cid:3)Adc (VEB = 5.0 Vdc, IC = 0) − 0.01 ON CHARACTERISTICS DC Current Gain hFE − (IC = 0.01 mAdc, VCE = 5.0 Vdc) MMBT6428 250 − MMBT6429 / NSVMMBT6429 500 − (IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428 250 650 MMBT6429 / NSVMMBT6429 500 1250 (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT6428 250 − MMBT6429 / NSVMMBT6429 500 − (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT6428 250 − MMBT6429 / NSVMMBT6429 500 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 0.5 mAdc) − 0.2 (IC = 100 mAdc, IB = 5.0 mAdc) − 0.6 Base−Emitter On Voltage VBE(on) Vdc (IC = 1.0 mAdc, VCE = 5.0 Vdc) 0.56 0.66 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 100 700 Output Capacitance Cobo pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 3.0 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 8.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25°C) CE A NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 20 V) IC = 10 mA RS ≈ 0 V) RS ≈ 0 n n E ( E ( G G TA 3.0 mA TA f = 10 Hz OL 10 OL 10 V V 100 Hz SE 1.0 mA SE OI 7.0 OI 7.0 , Nn , Nn 10 kHz 1.0 kHz e 5.0 e 5.0 300 (cid:3)A 100 kHz 3.0 3.0 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k100(cid:2)k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency Figure 3. Effects of Collector Current 10 20 BANDWIDTH = 1.0 Hz 7.0 5.0 IC = 10 mA 16 CURRENT (pA) 123...000 1.03 .m0 AmA E FIGURE (dB) 12 BANDWIDTH = 10 Hz to 15.7 IkCH =z 1.0 mA SE 0.7 300 (cid:3)A OIS 8.0 500 (cid:3)A OI 0.5 N , Nn 0.3 100 (cid:3)A NF, 100 (cid:3)A I 4.0 10 (cid:3)A 0.2 10 (cid:3)A 30 (cid:3)A RS ≈ 0 0.1 0 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k100(cid:2)k 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k100(cid:2)k f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 300 20 200 BANDWIDTH = 1.0 Hz IC = 10 mA TAGE (nV) 17000 31.000 m (cid:3)AA E (dB) 16 IC = 10 mA 3.0 m1A.0 mA V, TOTAL NOISE VOLT 71235.00000 300 (cid:3)1A.0 mA 10 (cid:3)A 30 (cid:3)A NF, NOISE FIGUR 481..200 303 (cid:3)00A1 (cid:3)00A1 (cid:3)0A (cid:3)A 5.0 BANDWIDTH = 1.0 Hz 3.0 0 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k 20(cid:2)k 50(cid:2)k100(cid:2)k 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k 20(cid:2)k 50(cid:2)k100(cid:2)k RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure www.onsemi.com 3

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G 4.0 D) 3.0 LIZE VCE = 5.0 V MA 2.0 TA = 125°C R NO 25°C AIN ( 1.0 T G -(cid:3)55°C N 0.7 E R UR 0.5 C C 0.4 D h , FE0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 8. DC Current Gain 1.0 -(cid:3)0.4 TJ = 25°C C) ° V/ 0.8 m -(cid:3)0.8 ER T ( V, VOLTAGE (VOLTS) 00..46 VBE @ VCE = 5.0 V R, BASE-EMITTθVBERATURE COEFFICIEN --(cid:3)(cid:3)11..26 TJ = 25°C to 125°C E 0.2 P -(cid:3)2.0 EM -(cid:3)55°C to 25°C T VCE(sat) @ IC/IB = 10 0 -(cid:3)2.4 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages Figure 10. Temperature Coefficients z) 8.0 MH 500 T ( 6.0 TJ = 25°C DUC O 300 pF) 4.0 Cob Ceb Cib H PR E ( DT 200 ANC 3.0 Ccb DWI T N PACI 2.0 — BA CA N C, GAI 100 - 1.0 RRENT 70 VTJC E= =2 55°.C0 V U 0.8 C 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 , T 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 f VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current−Gain — Bandwidth Product www.onsemi.com 4

MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 SIDE VIEW SEE VIEW C c STYLE 6: PIN 1. BASE END VIEW 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBT6428LT1/D 5