MMBT5550L, MMBT5551L High Voltage Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable COLLECTOR • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector−Emitter Voltage VCEO Vdc EMITTER MMBT5550 140 MMBT5551 160 MARKING 3 Collector−Base Voltage VCBO Vdc DIAGRAM MMBT5550 160 1 MMBT5551 180 2 Emitter−Base Voltage VEBO 6.0 Vdc SOT−23 (TO−236) x1x(cid:2) M(cid:2) Collector Current − Continuous IC 600 mAdc CASE 318 1 STYLE 6 Electrostatic Discharge ESD V Human Body Model > 8000 Machine Model > 400 x1x =Device Code M1F = MMBT5550LT THERMAL CHARACTERISTICS G1 = MMBT5551LT M = Date Code* Characteristic Symbol Max Unit (cid:2) = Pb−Free Package Total Device Dissipation FR−5 Board PD (Note: Microdot may be in either location) (Note 1) @TA = 25°C 225 mW *Date Code orientation and/or overbar may Derate Above 25°C 1.8 mW/°C vary depending upon manufacturing location. Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W Total Device Dissipation Alumina PD Substrate (Note 2) @TA = 25°C 300 mW ORDERING INFORMATION Derate Above 25°C 2.4 mW/°C Device Package Shipping† Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W MMBT5550LT1G SOT−23 3,000 / Tape & Junction and Storage Temperature TJ, Tstg −55 to +150 °C (Pb−Free) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the MMBT5550LT3G SOT−23 10,000 / Tape & device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Reel assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. MMBT5551LT1G SOT−23 3,000 / Tape & 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. (Pb−Free) Reel SMMBT5551LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBT5551LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel SMMBT5551LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 12 MMBT5550LT1/D

MMBT5550L, MMBT5551L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBT5550 140 − MMBT5551 160 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) MMBT5550 160 − MMBT5551 180 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 6.0 − Collector Cutoff Current ICBO (VCB = 100 Vdc, IE = 0) MMBT5550 − 100 nAdc (VCB = 120 Vdc, IE = 0) MMBT5551 − 50 (VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550 − 100 (cid:3)Adc (VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551 − 50 Emitter Cutoff Current IEBO nAdc (VEB = 4.0 Vdc, IC = 0) − 50 ON CHARACTERISTICS DC Current Gain hFE − (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550 60 − MMBT5551 80 − (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550 60 250 MMBT5551 80 250 (IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550 20 − MMBT5551 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) Both Types − 0.15 (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 − 0.25 MMBT5551 − 0.20 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) Both Types − 1.0 (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550 − 1.2 MMBT5551 − 1.0 Collector Emitter Cut−off ICES nA (VCB = 10 V) Both Types − 50 (VCB = 75 V) − 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle = 2.0%. www.onsemi.com 2

MMBT5550L, MMBT5551L TYPICAL CHARACTERISTICS 500 230000 TJ = 125°C VVCCEE == 15..00 VV N 25°C AI G 100 T EN -(cid:2)55°C R R 50 U C C 30 D h , FE 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain S) 1.0 T L O 0.9 V GE ( 0.8 A LT 0.7 O V IC = 1.0 mA 10 mA 30 mA 100 mA R 0.6 E T T 0.5 MI E - 0.4 R O T 0.3 C E LL 0.2 O C , E 0.1 C V 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 101 0.30 VCE = 30 V IC/IB = 10 μCURRENT ((cid:3)(cid:4)A) 1100-01 TJ = 125°C IC = ICES ation Voltage (V) 00..2250 150°C OR 10-2 75°C atur 0.15 , COLLECTIC 1100--34 REVERS25E°C FORWARD , Coll-Emitt SE(sat)00..1005 25°C-55°C C 10-5 V 0 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.0001 0.001 0.01 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (A) Figure 3. Collector Cut−Off Region Figure 4. V CE(sat) www.onsemi.com 3

MMBT5550L, MMBT5551L TYPICAL CHARACTERISTICS 1.10 1.10 V) 1.00 IC/IB = 10 -55°C 1.00 VCE = 10 V e ( Voltag 0.90 ge (V) 0.90 -55°C Saturation 00..8700 25°C mitter Volta 00..7800 25°C mitt 0.60 150°C e-E 0.60 , Base-EE(sat) 000...435000 V, BasBE(on) 000...435000 150°C B V 0.20 0.20 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. V Figure 6. V BE(sat) BE(on) 2.5 100 °V/C) 2.0 TJ = -55°C to +135°C 7500 TJ = 25°C m 1.5 FFICIENT ( 10..05 (cid:2)VC for VCE(sat) E (pF) 3200 E C CO 0 AN 10 RE -0.5 CIT 7.0 Cibo MPERATU --11..05 (cid:2)VB for VBE(sat) C, CAPA 53..00 Cobo , TEV-2.0 2.0 θ -2.5 1.0 0.1 0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Temperature Coefficients Figure 8. Capacitances 10.2 V VBB VCC -(cid:2)8.8 V 30 V Vin 100 3.0 k RC 10 (cid:3)s 0.25 (cid:3)F RB INPUT PULSE Vout 5.1 k tr, tf ≤ 10 ns Vin 100 1N914 DUTY CYCLE = 1.0% Values Shown are for IC @ 10 mA Figure 9. Switching Time Test Circuit www.onsemi.com 4

MMBT5550L, MMBT5551L TYPICAL CHARACTERISTICS 1000 1 Mhz) VTAC E= =2 51° VC uct ( T (A) 10 mS Prod 100 REN 0.1 h R dwidt R CU 1.0 S ain Ban 10 LECTO 0.01 G L nt CO Curre I, C , T f 1 0.001 0.1 1.0 10 100 1000 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 10. Current Gain Bandwidth Product Figure 11. Safe Operating Area 100 1000 7500 TJ = 25°C 500 ITCJ/ I=B 2=5 1°0C 30 300 tr @ VCC = 120 V pF) 20 200 E ( s) tr @ VCC = 30 V CITANC 71.00 Cibo TIME (n 100 APA 5.0 t, 50 td @ VEB(off) = 1.0 V C C, 3.0 Cobo 30 VCC = 120 V 2.0 20 1.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.20.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100 200 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Capacitances Figure 13. Turn−On Time www.onsemi.com 5

MMBT5550L, MMBT5551L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4.DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBOURT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBT5550LT1/D 6

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