ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > MMBT5550
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MMBT5550产品简介:
ICGOO电子元器件商城为您提供MMBT5550由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMBT5550价格参考¥0.09-¥0.09。Fairchild SemiconductorMMBT5550封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 140V 600mA 50MHz 350mW 表面贴装 SOT-23-3。您可以下载MMBT5550参考资料、Datasheet数据手册功能说明书,资料中有MMBT5550 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR NPN GP SOT-23两极晶体管 - BJT NPN Si Transistor Epitaxial |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,Fairchild Semiconductor MMBT5550- |
数据手册 | |
产品型号 | MMBT5550 |
PCN封装 | |
PCN组件/产地 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 250mV @ 5mA,50mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 60 @ 10mA,5V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-23-3 |
其它名称 | MMBT5550-ND |
功率-最大值 | 350mW |
包装 | 带卷 (TR) |
单位重量 | 60 mg |
发射极-基极电压VEBO | 6 V |
商标 | Fairchild Semiconductor |
增益带宽产品fT | 50 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 350 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.6 A |
最小工作温度 | - 55 C |
标准包装 | 3,000 |
电压-集射极击穿(最大值) | 140V |
电流-集电极(Ic)(最大值) | 600mA |
电流-集电极截止(最大值) | - |
直流电流增益hFE最大值 | 250 |
直流集电极/BaseGainhfeMin | 60 |
系列 | MMBT5550 |
配置 | Single |
集电极—发射极最大电压VCEO | 140 V |
集电极—基极电压VCBO | 160 V |
集电极连续电流 | 0.6 A |
零件号别名 | MMBT5550_NL |
频率-跃迁 | 50MHz |
MMBT5550 TRANSISTOR (NPN) FEATURES (cid:122) High Voltage Transistor SOT(cid:802)23 MARKING:M1F MAXIMUM RATINGS (Ta=25(cid:1071)(cid:1071) unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 140 V CEO 1. BASE V Emitter-Base Voltage 6 V EBO 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR P Collector Power Dissipation 225 mW C R(cid:300)JA Thermal Resistance From Junction To Ambient 556 (cid:1071)/W Tj Junction Temperature 150 (cid:1071) Tstg Storage Temperature -55(cid:794)+150 (cid:1071) ELECTRICAL CHARACTERISTICS (Ta=25(cid:1071) unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =0.1mA, I =0 160 V (BR)CBO C E Collector-emitter breakdown voltage V * I =1mA, I =0 140 V (BR)CEO C B Emitter-base breakdown voltage V I =0.01mA, I =0 6 V (BR)EBO E C Collector cut-off current I V =100V, I =0 0.1 (cid:151)A CBO CB E Emitter cut-off current I V =4V, I =0 50 nA EBO EB C h V =5V, I =1mA 60 FE(1) CE C DC current gain h V =5V, I =10mA 60 250 FE(2) CE C h V =5V, I =50mA 20 FE(3) CE C V (cid:3) I =10mA, I =1mA 0.15 V CE(sat)1 C B Collector-emitter saturation voltage V I =50mA, I =5mA 0.25 V CE(sat)2 C B V (cid:3) I =10mA, I =1mA 1 V BE(sat)1 C B Base-emitter saturation voltage V I =50mA, I =5mA 1.2 V BE(sat)2 C B *Pulse test: pulse width (cid:148)300(cid:541)s, duty cycle(cid:148) 2.0%. 2017-07/02 REV:O
(cid:54)(cid:50)(cid:55)(cid:16)(cid:21)(cid:22)(cid:3)(cid:51)(cid:68)(cid:70)(cid:78)(cid:68)(cid:74)(cid:72)(cid:3)(cid:50)(cid:88)(cid:87)(cid:79)(cid:76)(cid:81)(cid:72)(cid:3)(cid:39)(cid:76)(cid:80)(cid:72)(cid:81)(cid:86)(cid:76)(cid:82)(cid:81)(cid:86)(cid:3) Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF 0.022 REF L1 0.300 0.500 0.012 0.020 (cid:537) 0° 8° 0°(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:27)° (cid:54)(cid:50)(cid:55)(cid:16)(cid:21)(cid:22)(cid:54)(cid:88)(cid:74)(cid:74)(cid:72)(cid:86)(cid:87)(cid:72)(cid:71)(cid:3)(cid:51)(cid:68)(cid:71)(cid:3)(cid:47)(cid:68)(cid:92)(cid:82)(cid:88)(cid:3)(cid:87) (cid:34)(cid:34) (cid:34) (cid:34) (cid:34)(cid:34) (cid:34) (cid:34)
(cid:54)(cid:50)(cid:55)(cid:16)(cid:21)(cid:22)(cid:3)(cid:55)(cid:68)(cid:83)(cid:72)(cid:3)(cid:68)(cid:81)(cid:71)(cid:3)(cid:53)(cid:72)(cid:72)(cid:79) (cid:34)(cid:34) (cid:34) (cid:34) (cid:34)(cid:34) (cid:34) (cid:34)
DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures.
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