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2 N 5 0 8 8 / M M B 2N5088 MMBT5088 T 5 2N5089 MMBT5089 0 8 8 / 2 C N 5 0 8 E 9 C TO-92 / B SOT-23 B M E Mark: 1Q / 1R M B T NPN General Purpose Amplifier 5 0 8 This device is designed for low noise, high gain, general purpose 9 amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 2N5088 30 V CEO 2N5089 25 V V Collector-Base Voltage 2N5088 35 V CBO 2N5089 30 V V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 100 mA C TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5088 *MMBT5088 2N5089 *MMBT5089 P Total Device Dissipation 625 350 mW D Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A

2 NPN General Purpose Amplifier N 5 (continued) 0 8 8 Electrical Characteristics TA = 25°C unless otherwise noted / M Symbol Parameter Test Conditions Min Max Units M B T OFF CHARACTERISTICS 5 V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 5088 30 V 0 Voltage* 5089 25 V 8 8 V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 5088 35 V 5089 30 V / ICBO Collector Cutoff Current VCB = 20 V, IE = 0 5088 50 nA 2 N VCB = 15 V, IE = 0 5089 50 nA 5 IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA 0 VEB = 4.5 V, IC = 0 100 nA 8 9 ON CHARACTERISTICS / M hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088 300 900 5089 400 1200 M IC = 1.0 mA, VCE = 5.0 V 5088 350 B 5089 450 T IC = 10 mA, VCE = 5.0 V* 5088 300 5 5089 400 0 8 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V 9 VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 mA, 50 MHz f = 20 MHz 3 Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz 10 pF hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 5088 350 1400 f = 1.0 kHz 5089 450 1800 NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5088 3.0 dB RS = 10 kΩ, 5089 2.0 dB f = 10 Hz to 15.7 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)

2 NPN General Purpose Amplifier N 5 (continued) 0 8 8 Typical Characteristics / M M B Typical Pulsed Current Gain Collector-Emitter Saturation T 5 vs Collector Current V) Voltage vs Collector Current 0 RENT GAIN11020000 125 °C V C E = 5.0 V VOLTAGE (00.2.53 β = 10 88 / CUR 800 TER 0.2 2N ULSED 600 25 °C R-EMIT0.15 125 °C 508 TYPICAL P 240000 - 40 °C COLLECTO00.0.51 25 °C - 40 °C 9 / M h - FE 00.01 0.03I C -0 C.1OLL0E.3CTOR1 CURR3ENT 1(0mA)30 100 V - CESAT 0.1 I C - COL1LECTOR CURRE1N0T (mA) 100 BM T 5 0 8 Base-Emitter Saturation Base-Emitter ON Voltage vs 9 GE (V) Voltage vs Collector Current E (V) Collector Current VOLTA 1 - 40 °C OLTAG 1 ER 0.8 N V0.8 - 40 °C OR-EMITT0.6 25 °C 125 °C MITTER O0.6 25 °C 125 °C V - COLLECTBESAT00..240.1 I C - COL1LECTOR CURRE1N0T (mβ A=) 10 100 V - BASE-EBEON00..240.1 I C - COLLE1CTOR CURRENT (Vm1 0C A E )= 5.0 V 40 Collector-Cutoff Current vs Ambient Temperature A) 10 T (n V C B = 45V N E R R U C OR 1 T C E L L O C I - CBO0.125 50 75 100 125 150 T - AMBIENT TEMPERATURE ( ° C) A

2 NPN General Purpose Amplifier N 5 (continued) 0 8 8 Typical Characteristics (continued) / M M B Input and Output Capacitance Contours of Constant Gain T 5 vs Reverse Bias Voltage Bandwidth Product (f ) 0 T 8 E (pF)45 f = 1.0 MHz OLTAGE (V)1057 175 MHz 8 / 2N CITANC23 C t e CTOR V 3 150 MHz 085 CAPA1 Cob V - COLLECE 2 11720550 M MMHHHzzz 9 / M 0 1 M 0 4 8 12 16 20 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA) B T 5 0 8 Normalized Collector-Cutoff Current Wideband Noise Frequency 9 °25 C vs Ambient Temperature vs Source Resistance AUE AT T = 1000 dB)45 V BA C N E D =W I5D.T0H V = 15.7 kHz TO VAL 100 URE (3 I C = 100 µA 3 ELATIVE SE FIG2 I C = 30 µA CS R 10 NOI TERISTI NF - 1 I C = 10 µA C CHARA 125 T5 A 0- AMBIEN7T5 TEMPE1R00ATURE (1 °2 C5) 150 01,000 2,000R S - S5O,0U00RCE1 0R,0E00SIST2A0,0N0C0E (Ω )50,000 100,000 Noise Figure vs Frequency Power Dissipation vs Ambient Temperature 10 I C = 200 µA, 625 B) 8 R S = 10 kΩ mW) TO-92 E FIGURE (d 6 IR C S IR = C = S 1 = 5.= 001 100m0 0Ω A kµ,ΩA, SSIPATION (357050 SOT-23 NF - NOIS 24 IR C S = = 1 5.0.0 m kAΩ, POWER DI122550 V C E = 5.0V P - D 0 0 0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 f - FREQUENCY (MHz) TEMPERATURE ( o C)

2 NPN General Purpose Amplifier N 5 (continued) 0 8 8 Typical Characteristics (continued) / M M B Contours of Constant Contours of Constant T 5 Narrow Band Noise Figure Narrow Band Noise Figure 0 10,000 10,000 8 ΩE ( ) 5,000 3.0 dB ΩE ( ) 5,000 8 NC 4.0 dB NC / A A 2.0 dB 2 ST 2,000 ST 2,000 N CE RESI 1,000 68.0.0 d dBB CE RESI 1,000 3.0 4d.B0 dB 508 R - SOURS 250000 VfB= = AC 2 EN01 0 D=H0 Wz 5H .I0zD TVH 111042 dddBBB R - SOURS 250000 VfB= =A2C EN0 1 0 .D=0 H W k5z.HI 0Dz TVH 68.0.0 d dBB 9 / M 1001 10 100 1,000 1001 10 100 1,000 M I C - COLLECTOR CURRENT ( µ A) I C - COLLECTOR CURRENT ( µ A) B T 5 0 8 Contours of Constant Contours of Constant 9 Narrow Band Noise Figure Narrow Band Noise Figure 10000 10000 ΩE ( ) 5000 ΩE ( ) 5000 C 1.0 dB C N N STA 2000 2.0 dB STA 2000 2.0 dB SI SI R - SOURCE RES 1125000000000 VfB= = AC2 E.1N 0 0=Dkk HW5H.z0zI D V T H 34..600. 08dd .BB0d BdB R - SOURCE RES 1125000000000 BV5f= . =CA02 EV0N1 0.= D0 k WHM zIH D zT H 8.0 dB 3.0 dB4.0 7d.B0 dB 6d5d..BB00 1 10 100 1000 0.01 0.1 1 10 I C - COLLECTOR CURRENT ( µ A) I C - COLLECTOR CURRENT ( µ A)

2 NPN General Purpose Amplifier N 5 (continued) 0 8 8 Typical Common Emitter Characteristics (f = 1.0 kHz) / M M B Typical Common Emitter Characteristics Typical Common Emitter Characteristics T CHARACTERISTICS RELATIVE TO VALUE(V =5V)CE001111......89123410 hhhrifeee hoe 5 10 15 2IfT C 0= A = 1= 1 .hhhh20.o50kirfeeee°mH CzA 2 5 ° CHARACTERISTICS RELATIVE TO VALUE(T =25 C)A0000011111..........56789123451-100 IVf C =C =E 1 1hhh=.0.o r0f5ekeem.H-05zVA0 h ie 0 50 hie 100 hhhorfeee 150 089 / MM088 / 2N55 V C E - COLLECTOR VOLTAGE (V) T J - JUNCTION TEMPERATURE ( ° C) B T 5 0 8 Typical Common Emitter Characteristics 9 mA) 100 UE(I =1C f = 1.0kHz hoe AL 10 V VE TO h i e and h r e hre 3 LATI 1 hoe E R RISTICS 0.1 hfe hie hfe E T C A R A CH0.01 0.1 0.2 0.5 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA)

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