MMBT5088L, MMBT5089L Low Noise Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 (TO−236) CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit COLLECTOR Collector−Emitter Voltage VCEO Vdc 3 MMBT5088L 30 MMBT5089L 25 1 Collector−Base Voltage VCBO Vdc BASE MMBT5088L 35 MMBT5089L 30 2 Emitter−Base Voltage VEBO 4.5 Vdc EMITTER Collector Current − Continuous IC 50 mAdc THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, PD 1x M(cid:2) (Note 1) TA = 25°C 225 mW (cid:2) Derate above 25°C 1.8 mW/°C 1 Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W 1x =Device Code Total Device Dissipation Alumina PD x = Q for MMBT5088L Substrate, (Note 2) TA = 25°C 300 mW SMMBT5088L Derate above 25°C 2.4 mW/°C x = R for MMBT5089L SMMBT5089L Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W M = Date Code* Junction and Storage Temperature TJ, Tstg −55 to +150 °C (cid:2) = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be *Date Code orientation and/or overbar may assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping† MMBT5088LT1G, SOT−23 3,000 / Tape & SMMBT5088LT1G (Pb−Free) Reel NSVMMBT5088LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel MMBT5089LT1G, SOT−23 3,000 / Tape & SMMBT5089LT1G (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 6 MMBT5088LT1/D

MMBT5088L, MMBT5089L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBT5088L 30 − MMBT5089L 25 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 100 (cid:3)Adc, IE = 0) MMBT5088L 35 − MMBT5089L 30 − Collector Cutoff Current ICBO nAdc (VCB = 20 Vdc, IE = 0) MMBT5088L − 50 (VCB = 15 Vdc, IE = 0) MMBT5089L − 50 Emitter Cutoff Current IEBO nAdc (VEB(off) = 3.0 Vdc, IC = 0) MMBT5088L − 50 (VEB(off) = 4.5 Vdc, IC = 0) MMBT5089L − 100 ON CHARACTERISTICS DC Current Gain hFE − (IC = 100 (cid:3)Adc, VCE = 5.0 Vdc) MMBT5088L 300 900 MMBT5089L 400 1200 (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088L 350 − MMBT5089L 450 − (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088L 300 − MMBT5089L 400 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.5 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.8 SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product fT MHz (IC = 500 (cid:3)Adc, VCE = 5.0 Vdc, f = 20 MHz) 50 − Collector−Base Capacitance Ccb pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) − 4.0 Emitter−Base Capacitance Ceb pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) − 10 Small Signal Current Gain hfe − (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088L 350 1400 MMBT5089L 450 1800 Noise Figure NF dB (IC = 100 (cid:3)Adc, VCE = 5.0 Vdc, RS = 10 k(cid:4), f = 1.0 kHz) MMBT5088L − 3.0 MMBT5089L − 2.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2

MMBT5088L, MMBT5089L NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25°C) CE A NOISE VOLTAGE 30 30 BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 20 20 V) IC = 10 mA RS ≈ 0 V) RS ≈ 0 n n E ( E ( G G TA 3.0 mA TA f = 10 Hz OL 10 OL 10 V V 100 Hz SE 1.0 mA SE OI 7.0 OI 7.0 , Nn , Nn 10 kHz 1.0 kHz e 5.0 e 5.0 300 (cid:3)A 100 kHz 3.0 3.0 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k100(cid:2)k 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 f, FREQUENCY (Hz) IC, COLLECTOR CURRENT (mA) Figure 2. Effects of Frequency Figure 3. Effects of Collector Current 10 20 BANDWIDTH = 1.0 Hz 7.0 5.0 IC = 10 mA 16 CURRENT (pA) 123...000 1.03 .m0 AmA E FIGURE (dB) 12 BANDWIDTH = 10 Hz to 15.7 IkCH =z 1.0 mA SE 0.7 300 (cid:3)A OIS 8.0 500 (cid:3)A OI 0.5 N , Nn 0.3 100 (cid:3)A NF, 100 (cid:3)A I 4.0 10 (cid:3)A 0.2 10 (cid:3)A 30 (cid:3)A RS ≈ 0 0.1 0 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k100(cid:2)k 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k20(cid:2)k 50(cid:2)k100(cid:2)k f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current Figure 5. Wideband Noise Figure 100 Hz NOISE DATA 300 20 200 BANDWIDTH = 1.0 Hz IC = 10 mA TAGE (nV) 17000 31.000 m (cid:3)AA E (dB) 16 IC = 10 mA 3.0 m1A.0 mA V, TOTAL NOISE VOLT 71235.00000 300 (cid:3)1A.0 mA 10 (cid:3)A 30 (cid:3)A NF, NOISE FIGUR 481..200 303 (cid:3)00A1 (cid:3)00A1 (cid:3)0A (cid:3)A 5.0 BANDWIDTH = 1.0 Hz 3.0 0 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k 20(cid:2)k 50(cid:2)k100(cid:2)k 10 20 50 100 200 500 1(cid:2)k 2(cid:2)k 5(cid:2)k 10(cid:2)k 20(cid:2)k 50(cid:2)k100(cid:2)k RS, SOURCE RESISTANCE (OHMS) RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure www.onsemi.com 3

MMBT5088L, MMBT5089L 4.0 D) 3.0 LIZE VCE = 5.0 V MA 2.0 TA = 125°C R NO 25°C AIN ( 1.0 T G -(cid:3)55°C N 0.7 E R UR 0.5 C C 0.4 D h , FE0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 8. DC Current Gain 1.0 -(cid:3)0.4 TJ = 25°C C) ° V/ 0.8 m -(cid:3)0.8 ER T ( V, VOLTAGE (VOLTS) 00..46 VBE @ VCE = 5.0 V R, BASE-EMITTθVBERATURE COEFFICIEN --(cid:3)(cid:3)11..26 TJ = 25°C to 125°C E 0.2 P -(cid:3)2.0 EM -(cid:3)55°C to 25°C T VCE(sat) @ IC/IB = 10 0 -(cid:3)2.4 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltages Figure 9. Temperature Coefficients z) 8.0 MH 500 T ( 6.0 TJ = 25°C DUC O 300 pF) 4.0 Cob Ceb Cib H PR E ( DT 200 ANC 3.0 Ccb DWI T N PACI 2.0 — BA CA N C, GAI 100 - 1.0 RRENT 70 VTJC E= =2 55°.C0 V U 0.8 C 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 , T 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 f VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Capacitance Figure 10. Current−Gain — Bandwidth Product www.onsemi.com 4

MMBT5088L, MMBT5089L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 SIDE VIEW SEE VIEW C c STYLE 6: PIN 1. BASE END VIEW 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBT5088LT1/D 5

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