Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M M B March 2014 T 4 1 2 6 — P MMBT4126 N P PNP General-Purpose Amplifier G e n e r a l - P Description u r C p This device is designed for general-purpose amplifier o s and switching applications at collector currents to 10 μA e as a switch and to 100 mA as an amplifier. E A m SOT-23 B p Mark: ZF l i f i e r Ordering Information Part Number Marking Package Packing Method MMBT4126 ZF SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -25 V CEO V Collector-Base Voltage -25 V CBO V Emitter-Base Voltage -4 V EBO I Collector Current - Continuous -200 mA C T T Junction and Storage Temperature Range -55 to +150 °C J , STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT4126 Rev. 1.1.0 1

M M Thermal Characteristics(3) B T Values are at TA = 25°C unless otherwise noted. 4 1 2 Symbol Parameter Max. Unit 6 — Total Device Dissipation 350 mW PD P Derate Above T = 25°C 2.8 mW/°C A N RθJA Thermal Resistance, Junction to Ambient 357 °C/W P G Note: e n 3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. e r a l - P Electrical Characteristics u r p Values are at T = 25°C unless otherwise noted. o A s e Symbol Parameter Conditions Min. Max. Unit A V Collector-Emitter Breakdown Voltage I = -1.0 mA, I = 0 -25 V m (BR)CEO C B p V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -25 V li f V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -4.0 V ie r I Collector Cut-Off Current V = -20 V, I = 0 -50 nA CBO CB E I Emitter Cut-Off Current V = -3.0 V, I = 0 -50 nA EBO EB C I = -2.0 mA, V = -1.0 V 120 360 h DC Current Gain(4) C CE FE I = -50 mA, V = -1.0 V 60 C CE Collector-Emitter Saturation V (sat) I = -50 mA, I = -5.0 mA -0.4 V CE Voltage(4) C B V (sat) Base-Emitter Saturation Voltage(4) I = -50 mA, I = -5.0 mA -0.95 V BE C B I = -10 mA, V = -20 V, f Current Gain - Bandwidth Product C CE 250 MHz T f = 100 MHz V = -0.5 V, I = 0, C Input Capacitance EB C 10 pF ib f = 1.0 MHz V = -5.0 V, I = 0, C Collector-Base Capcitance CB E 4.5 pF cb f = 100 kHz I = -2.0 mA, V = -10 V, h Small-Signal Current Gain C CE 120 480 fe f = 1.0 kHz I = -100 μA, V = -5.0 V, C CE NF Noise Figure R = -1.0 kΩ, 4.0 dB S f = 10 Hz to 15.7 kHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. ©1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT4126 Rev. 1.1.0 2

M M Typical Performance Characteristics B T 4 1 RRENT GAIN 220500 125 °C V C E = 1.0V R VOLTAGE (V) 00.2.35 β = 10 26 — PN CU TE 0.2 P ED MIT G ULS 150 25 °C OR E 0.15 25 °C en YPICAL P 100 - 40 °C COLLECT 00.0.15 125°C - 40 °C eral-P h - TFE 500.1 0.2 I C 0-. 5COL1LECT2OR CU5RRE1N0T (2m0A) 50 100 V - CESAT 01 I C - COLLEC1T0OR CURRENT (mA)100 200 urpo s e Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs. A Collector Current Collector Current m p l i f i V) e GE (V) 1 β = 10 AGE ( 1 r LTA - 40 °C OLT 0.8 VO 0.8 25 °C N V - 40 °C TTER 0.6 125 °C ER O 0.6 25 °C MI TT 125 °C E E 0.4 EMI 0.4 V - BASBESAT0.201 I - COLLEC1T0OR CURRENT (mA)100 200 V - BASE BE(ON)0.200.1 I - COLLEC1TOR CURRENT V ( mC E A =)1 01V 25 C C Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs. vs. Collector Current Collector Current A) 100 10 n T ( V C B = 25V Cobo RREN 10 E (pF) 8 OR CU 1 TANC 6 T CI 4 C i bo C A E P L A OL 0.1 C 2 C I - CBO0.0125 50 75 100 125 00.1 REVERSE BIA1S VOLTAGE (V) 10 T A - AMBIENT TEMPERATURE (° C) Figure 5. Collector Cut-Off Current vs. Figure 6. Common-Base Open-Circuit Input and Ambient Temperature Output Capacitance vs. Reverse-Bias Voltage ©1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT4126 Rev. 1.1.0 3

M M Typical Performance Characteristics (Continued) B T 4 1 6 12 2 V = 5.0V V = 5.0V 6 CE CE f = 1.0 kHz — RE (dB) 45 RE (dB) 180 I C = 1.0 mA PN U U P E FIG 3 I C = 100 μA, R S = 200Ω E FIG 6 Ge S S OI OI n N 2 N 4 e F - I C = 1.0 mA, R S = 200Ω F - I C = 100 μA ra N 1 N 2 l- I C = 100 μA, R S = 2.0 kΩ P u 0 0 r 0.1 1 10 100 0.1 1 10 100 p f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( k Ω ) o s e Figure 7. Noise Figure vs. Frequency Figure 8. Noise Figure vs. Source Resistance A m p l i f i 500 500 e r t s t o f f 100 100 E (nS) tf E (nS) t o n I B 1 = 1I0c t o n M M V = 0.5V TI 10 I B 1 = I B 2 = 1I0c tr TI 10 t o f f BEI B( O 1 F=F )I B 2 = 1I0c td 1 1 1 10 100 1 10 100 I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) Figure 9. Switching Times vs. Collector Current Figure 10. Turn-On and Turn-Off Times vs. Collector Current _40 ) 100 1 1 x W) O ( N ( SOT-223 ATI O 0.75 R TI TO-92 K DISSIPA 0.5 EDBAC 10 R SOT-23 E E F W E PO 0.25 AG P - D OLT V 00 25 T5E0MPERA7T5URE ( o1 C00) 125 150 h - re 10.1 1 10 I - COLLECTOR CURRENT (mA) C Figure 11. Power Dissipation vs. Figure 12. Voltage Feedback Ratio Ambient Temperature © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT4126 Rev. 1.1.0 4

M M Typical Performance Characteristics (Continued) B T 4 1 ΩE (k ) 10 Vf C= E 1 =.0 1 k0H Vz μE ( mhos) 1000 Vf C= E 1 =.0 1 k0H Vz 26 — P NC NC N DA TA P E T UT IMP 1 T ADMI 100 Gen P U e N P r h - Iie0.1 h - OUToe 10 al-Pur 0.1 1 10 0.1 1 10 p I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA) o C C s e Figure 13. Input Impedance Figure 14. Output Admittance A m p l i 1000 V C E = 10 V fie f = 1.0 kHz r 500 N AI G 200 T N E R 100 R U h - Cfe 50 20 10 0.1 1 10 I - COLLECTOR CURRENT (mA) C Figure 15. Current Gain © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT4126 Rev. 1.1.0 5

M M Physical Dimensions B T 4 1 2 6 SOT-23 — P N 0.95 P 2.92±0.20 G e 3 n 1.40 e r a l - +0.20 P 1.30-0.15 2.20 u r p o s e 1 2 A (0.29) 0.60 m 0.37 0.95 p 0.20 A B 1.00 l i 1.90 1.90 fi e LAND PATTERN r RECOMMENDATION 1.20 MAX SEE DETAIL A (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 16. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf. © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT4126 Rev. 1.1.0 6

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AccuPower(cid:2) F-PFS(cid:2) AX-CAP®* FRFET® ® ®* BitSiC(cid:2) Global Power ResourceSM PowerTrench® TinyBoost® Build it Now(cid:2) GreenBridge(cid:2) PowerXS™ TinyBuck® CorePLUS(cid:2) Green FPS(cid:2) Programmable Active Droop(cid:2) TinyCalc(cid:2) CorePOWER(cid:2) Green FPS(cid:2) e-Series(cid:2) QFET® TinyLogic® CROSSVOLT(cid:2) Gmax(cid:2) QS(cid:2) TINYOPTO(cid:2) CTL(cid:2) GTO(cid:2) Quiet Series(cid:2) TinyPower(cid:2) Current Transfer Logic(cid:2) IntelliMAX(cid:2) RapidConfigure(cid:2) TinyPWM(cid:2) DEUXPEED® ISOPLANAR(cid:2) (cid:2) TinyWire(cid:2) Dual Cool™ Making Small Speakers Sound Louder TranSiC(cid:2) EcoSPARK® and Better™ Saving our world, 1mW/W/kWat a time™ TriFault Detect(cid:2) EfficientMax(cid:2) MegaBuck(cid:2) SignalWise(cid:2) TRUECURRENT®* ESBC(cid:2) MICROCOUPLER(cid:2) SmartMax(cid:2) (cid:3)SerDes(cid:2) ® MicroFET(cid:2) SMART START(cid:2) FFFFFFFFaAPAAEaasiiCSCSTrrtccB(cid:2)TvTThhC®e® iiQll noddcur ®eShi e(cid:2)(cid:2)et m Siecroiensd(cid:2)uc tor® MMMMmOOOPpPWioiilcclttTTerroiSooorOOHDnPaPPLiMvrTaaOieLkvk(cid:2)arAe2(cid:2)G®x (cid:2)N(cid:2) (cid:2)I CA ®R ® SSSSSSSSSuTouuPuuypnpplppEMuecereeAte®rFirrrSoL FMSSEnOTEOOTOsHTT(cid:2) TTSf(cid:2)(cid:2)®o(cid:2)(cid:2) ® -r 3-- Y68 our Success(cid:2) UUUVVVXCioSHlnstrli™XuCtFaaa(cid:2)E ®g Fl MTe R(cid:2)PaFlx uE(cid:2) sT(cid:2)(cid:2) Sync-Lock™ (cid:3037)(cid:10106)™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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