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  • 型号: MMBT3906SL
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
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MMBT3906SL产品简介:

ICGOO电子元器件商城为您提供MMBT3906SL由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMBT3906SL价格参考。Fairchild SemiconductorMMBT3906SL封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 40V 200mA 250MHz 227mW 表面贴装 SOT-923F。您可以下载MMBT3906SL参考资料、Datasheet数据手册功能说明书,资料中有MMBT3906SL 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS GP PNP 40V 200MA SOT-923F两极晶体管 - BJT 40V 200mA PNP Epitaxial Silicon

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,Fairchild Semiconductor MMBT3906SL-

数据手册

点击此处下载产品Datasheet

产品型号

MMBT3906SL

不同 Ib、Ic时的 Vce饱和值(最大值)

400mV @ 5mA,50mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

100 @ 10mA,1V

产品目录页面

点击此处下载产品Datasheet

产品种类

两极晶体管 - BJT

供应商器件封装

SOT-923F

其它名称

MMBT3906SLDKR

功率-最大值

227mW

包装

Digi-Reel®

单位重量

22 mg

发射极-基极电压VEBO

5 V

商标

Fairchild Semiconductor

增益带宽产品fT

250 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SOT-923F

封装/箱体

SOT-923F

工厂包装数量

8000

晶体管极性

PNP

晶体管类型

PNP

最大功率耗散

227 mW

最大工作温度

+ 150 C

最大直流电集电极电流

0.2 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

40V

电流-集电极(Ic)(最大值)

200mA

电流-集电极截止(最大值)

-

直流电流增益hFE最大值

60 at 0.1 mA at 1 V

直流集电极/BaseGainhfeMin

60 at 0.1 mA at 1 V, 80 at 1 mA at 1 V, 100 at 10 mA at 1 V, 60 at 50 mA at 1 V, 30 at 100 mA at 1 V

系列

MMBT3906

配置

Single

集电极—发射极最大电压VCEO

40 V

集电极—基极电压VCBO

40 V

频率-跃迁

250MHz

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M M B June 2015 T 3 9 0 6 S L — MMBT3906SL P PNP Epitaxial Silicon Transistor N P E p i t a Features x i a • General-Purpose Amplifier Transistor l S • Ultra Small Surface Mount Package for All Types (Max. 0.43mm Tall) i l i • Suitable for General Switching and Amplification c o • Well Suited for Portable Application n • As Complementary type, NPN MMBT3904SL is Recommended. T r a • Pb Free n COLLECTOR s i 3 s t o C r 1 E BASE B 2 SOT-923F Marking : AB EMITTER Ordering Information Part Number Top Mark Package Packing Method MMBT3906SL AB SOT-923F 3L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -200 mA C T Junction Temperature 150 °C J T Storage Temperature Range -55 to +150 °C STG Note: 1. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT3906SL Rev. 1.4

M M Thermal Characteristics B T Values are at TA = 25°C unless otherwise noted. 3 9 0 Symbol Parameter Value Unit 6 S Power Dissipation, by RθJA 227 mW L PD Derate Above 25°C 1.81 mW/°C — RθJA Thermal Resistance, Junction-to-Ambient(2) 550 °C/W PN P Note: E 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. p i t a x i a l Electrical Characteristics(3) S i l i Values are at T = 25°C unless otherwise noted. c A o n Symbol Parameter Conditions Min. Max. Unit T BVCBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V ra n BV Collector-Emitter Breakdown Voltage I = -1 mA, I = 0 -40 V s CEO C B i s BVEBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5 V to I Collector Cut-Off Current V = -30 V, V = -0.3 V -50 nA r CEX CE EB(OFF) V = -1.0 V, I = -0.1 mA 60 CE C V = -1.0 V, I = -1 mA 80 CE C h DC Current Gain V = -1.0 V, I = -10 mA 100 300 FE CE C V = -1.0 V, I = -50 mA 60 CE C V = -1.0 V, I = -100 mA 30 CE C I = -10 mA, I = -1.0 mA -0.25 C B V Collector-Emitter Saturation Voltage V CE(sat) I = -50 mA, I = -5.0 mA -0.40 C B I = -10 mA, I = -1.0 mA -0.65 -0.85 C B V Base-Emitter Saturation Voltage V BE(sat) I = -50 mA, I = -5.0 mA -0.95 C B V = -20 V, I = -10 mA, f Current Gain-Bandwidth Product CE C 250 MHz T f = 100 MHz C Output Capacitance V = -5 V, I = 0, f = 1 MHz 7.0 pF ob CB E C Input Capacitance V = -0.5 V, I = 0, f = 1 MHz 15 pF ib EB C t Delay Time 35 ns d tr Rise Time VCC = -3 V, IC = -10 mA, 35 ns ts Storage Time IB1 = -IB2 = -1 mA 225 ns t Fall Time 75 ns f Note: 3. DC Item are tested by pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT3906SL Rev. 1.4 2

M M Typical Performance Characteristics B T 3 9 0 6 1000 T=125 oC S J T=75 oC Vce=1V Ic=10*Ib L J V] — m TJ=25 oC ge,[ PN Gain 100 TJ=-25 oC Volta TJ=125 oC P Current ollector-Emitter 100 TJ=75 oC TJ=-25 oTCJ=25 oC Epitaxial C S i l 10 i 1 10 100 10 100 c o Collector Current, [mA] Collector Current, [mA] n Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage T r a n s i s t 100 o Ic=10*Ib r T=25 oC TJ=-25 oC nA] mV] 1000 J ent,[ e,[ urr er Voltag TJ=125 ToCJ=75 oC eakage C 10 TJ=125 oC mitt or L Base- E se-Collect TTJJ==2755 ooCC 100 Ba 1 TJ=-25 oC 10 100 10 20 30 40 Collector Current, [mA] Base-Collector Revere Voltage, [V] Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current pF] 12 300 C[ob f=1mhz ance, 11 W] 250 apacit 9 on, [m 200 untion C 8 Dissipati 110500 or J wer ollect 6 Po 50 C se- 0 5 10 00 25 50 75 100 125 150 a B Base- Collector Reverse Voltage, V [V] Ambient Temperature, T[oC] cb a Figure 5. Collector- Base Capacitance Figure 6. Power Derating © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT3906SL Rev. 1.4 3

M M Physical Dimensions B T 3 9 0 6 S L — (cid:19)(cid:17)(cid:28)(cid:19)(cid:3)(cid:16)(cid:3)(cid:20)(cid:17)(cid:20)(cid:19) P (cid:19)(cid:17)(cid:27)(cid:21) N (cid:36) (cid:19)(cid:17)(cid:26)(cid:24)(cid:3)(cid:16)(cid:3)(cid:19)(cid:17)(cid:27)(cid:24) P (cid:19)(cid:17)(cid:22)(cid:25) (cid:19)(cid:17)(cid:22)(cid:21) (cid:19)(cid:17)(cid:22)(cid:24) E p i t a (cid:37) x i a (cid:19)(cid:17)(cid:21)(cid:27) l (cid:19)(cid:17)(cid:20)(cid:21)(cid:3)(cid:16)(cid:3)(cid:19)(cid:17)(cid:21)(cid:21) (cid:19)(cid:17)(cid:20)(cid:26)(cid:3)(cid:16)(cid:3)(cid:19)(cid:17)(cid:21)(cid:26) (cid:19)(cid:17)(cid:21)(cid:25) S (cid:19)(cid:17)(cid:19)(cid:27) (cid:36) (cid:37) (cid:19)(cid:17)(cid:24)(cid:24)(cid:3)(cid:16)(cid:3)(cid:19)(cid:17)(cid:25)(cid:24) (cid:19)(cid:17)(cid:21)(cid:27) ili c (cid:22)(cid:59) o (cid:55)(cid:50)(cid:51)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:47)(cid:36)(cid:49)(cid:39)(cid:3)(cid:51)(cid:36)(cid:55)(cid:55)(cid:40)(cid:53)(cid:49)(cid:3)(cid:53)(cid:40)(cid:38)(cid:50)(cid:48)(cid:48)(cid:40)(cid:49)(cid:39)(cid:36)(cid:55)(cid:44)(cid:50)(cid:49) n T r a n (cid:19)(cid:17)(cid:23)(cid:22)(cid:3)(cid:48)(cid:68)(cid:91) s (cid:19)(cid:17)(cid:22)(cid:28)(cid:3)(cid:16)(cid:3)(cid:19)(cid:17)(cid:23)(cid:20) (cid:19)(cid:17)(cid:19)(cid:27)(cid:3)(cid:16)(cid:3)(cid:19)(cid:17)(cid:20)(cid:23) is t (cid:19)(cid:17)(cid:22)(cid:24) o r (cid:19)(cid:17)(cid:19)(cid:24) (cid:11)(cid:19)(cid:17)(cid:20)(cid:19)(cid:12) (cid:54)(cid:40)(cid:36)(cid:55)(cid:44)(cid:49)(cid:42)(cid:3)(cid:51)(cid:47)(cid:36)(cid:49)(cid:40) (cid:19)(cid:17)(cid:19)(cid:19) (cid:40)(cid:49)(cid:39)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:54)(cid:44)(cid:39)(cid:40)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:40)(cid:49)(cid:39)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:19)(cid:17)(cid:21)(cid:25) (cid:22)(cid:59) (cid:19)(cid:17)(cid:20)(cid:19) (cid:19)(cid:17)(cid:20)(cid:24) (cid:22)(cid:59) (cid:19)(cid:17)(cid:19)(cid:24) (cid:37)(cid:50)(cid:55)(cid:55)(cid:50)(cid:48)(cid:3)(cid:57)(cid:44)(cid:40)(cid:58) (cid:49)(cid:50)(cid:55)(cid:40)(cid:54)(cid:29)(cid:3) (cid:3)(cid:3)(cid:3)(cid:36)(cid:12)(cid:3)(cid:55)(cid:43)(cid:44)(cid:54)(cid:3)(cid:51)(cid:36)(cid:38)(cid:46)(cid:36)(cid:42)(cid:40)(cid:3)(cid:39)(cid:50)(cid:40)(cid:54)(cid:3)(cid:49)(cid:50)(cid:55)(cid:3)(cid:38)(cid:50)(cid:48)(cid:51)(cid:47)(cid:60) (cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:55)(cid:50)(cid:3)(cid:36)(cid:49)(cid:60)(cid:3)(cid:38)(cid:56)(cid:53)(cid:53)(cid:40)(cid:49)(cid:55)(cid:3)(cid:51)(cid:36)(cid:38)(cid:46)(cid:36)(cid:42)(cid:44)(cid:49)(cid:42)(cid:3)(cid:54)(cid:55)(cid:36)(cid:49)(cid:39)(cid:36)(cid:53)(cid:39)(cid:17) (cid:3)(cid:3)(cid:3)(cid:37)(cid:12)(cid:3)(cid:36)(cid:47)(cid:47)(cid:3)(cid:39)(cid:44)(cid:48)(cid:40)(cid:49)(cid:54)(cid:44)(cid:50)(cid:49)(cid:54)(cid:3)(cid:36)(cid:53)(cid:40)(cid:3)(cid:44)(cid:49)(cid:3)(cid:48)(cid:44)(cid:47)(cid:47)(cid:44)(cid:48)(cid:40)(cid:55)(cid:40)(cid:53)(cid:54)(cid:17) (cid:3)(cid:3)(cid:3)(cid:38)(cid:12)(cid:3)(cid:39)(cid:44)(cid:48)(cid:40)(cid:49)(cid:54)(cid:44)(cid:50)(cid:49)(cid:54)(cid:3)(cid:36)(cid:53)(cid:40)(cid:3)(cid:44)(cid:49)(cid:38)(cid:47)(cid:56)(cid:54)(cid:44)(cid:57)(cid:40)(cid:3)(cid:50)(cid:41)(cid:3)(cid:37)(cid:56)(cid:53)(cid:53)(cid:54)(cid:15)(cid:3)(cid:36)(cid:49)(cid:39)(cid:3)(cid:48)(cid:50)(cid:47)(cid:39)(cid:3) (cid:41)(cid:47)(cid:36)(cid:54)(cid:43)(cid:17) (cid:3)(cid:3)(cid:3)(cid:39)(cid:12)(cid:3)(cid:39)(cid:44)(cid:48)(cid:40)(cid:49)(cid:54)(cid:44)(cid:50)(cid:49)(cid:54)(cid:3)(cid:36)(cid:49)(cid:39)(cid:3)(cid:55)(cid:50)(cid:47)(cid:40)(cid:53)(cid:36)(cid:49)(cid:38)(cid:40)(cid:54)(cid:3)(cid:51)(cid:40)(cid:53)(cid:3)(cid:36)(cid:54)(cid:48)(cid:40)(cid:3)(cid:60)(cid:20)(cid:23)(cid:17)(cid:24)(cid:48)(cid:15)(cid:3)(cid:20)(cid:28)(cid:28)(cid:23) (cid:3)(cid:3)(cid:3)(cid:40)(cid:12)(cid:3)(cid:39)(cid:53)(cid:36)(cid:58)(cid:44)(cid:49)(cid:42)(cid:3)(cid:41)(cid:44)(cid:47)(cid:40)(cid:3)(cid:49)(cid:36)(cid:48)(cid:40)(cid:3)(cid:29)(cid:3)(cid:54)(cid:50)(cid:55)(cid:28)(cid:21)(cid:22)(cid:41)(cid:20)(cid:53)(cid:40)(cid:57)(cid:21) Figure 7. 3-LEAD, SOT923F, 0.4 mm TALL, FLAT TERMINAL © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT3906SL Rev. 1.4 4

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AccuPower(cid:165) F-PFS(cid:165) OPTOPLANAR® AttitudeEngine™ FRFET® ®* Awinda® Global Power ResourceSM ® TinyBoost® AX-CAP®* GreenBridge(cid:165) Power Supply WebDesigner(cid:165) TinyBuck® BitSiC(cid:165) Green FPS(cid:165) PowerTrench® TinyCalc(cid:165) Build it Now(cid:165) Green FPS(cid:165) e-Series(cid:165) PowerXS™ TinyLogic® CorePLUS(cid:165) Gmax(cid:165) Programmable Active Droop(cid:165) TINYOPTO(cid:165) CorePOWER(cid:165) GTO(cid:165) QFET® TinyPower(cid:165) CROSSVOLT(cid:165) IntelliMAX(cid:165) QS(cid:165) TinyPWM(cid:165) CTL(cid:165) ISOPLANAR(cid:165) Quiet Series(cid:165) TinyWire(cid:165) Current Transfer Logic(cid:165) Making Small Speakers Sound Louder RapidConfigure(cid:165) TranSiC(cid:165) DEUXPEED® and Better™ (cid:165) TriFault Detect(cid:165) Dual Cool™ MegaBuck(cid:165) TRUECURRENT®* EcoSPARK® MICROCOUPLER(cid:165) Saving our world, 1mW/W/kW at a time™ μSerDes(cid:165) EfficientMax(cid:165) MicroFET(cid:165) SignalWise(cid:165) ESBC(cid:165) MicroPak(cid:165) SmartMax(cid:165) ® MicroPak2(cid:165) SMART START(cid:165) UHC® Solutions for Your Success(cid:165) Fairchild® MillerDrive(cid:165) SPM® Ultra FRFET(cid:165) FFFFFFAEAAaasiCTCSrtcBTvTThC®e® iQlnodcur eShie(cid:165)(cid:165)et mSiecroiensd(cid:165)uctor® MMMMMmTToVWotixNt®iiS®oo®nnaGMveraird®x®(cid:165) SSSSSSuTuuuupppppEeereeAerrrrSLFMSSOTEOOOHTTTTS(cid:165)(cid:165)®(cid:165)(cid:165)®-3--68 XUVVVXsCioSnseli™XutFnaa(cid:165)Esg l™MTe(cid:165)Palxu(cid:165)s(cid:165) FPS(cid:165) OOpPtToOHLiTO(cid:165)GIC® SyncFET(cid:165) (cid:3037)(cid:10106)™ Sync-Lock™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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