MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose Transistors www.onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which 1 is designed for low power surface mount applications. BASE Features • 2 S Prefix for Automotive and Other Applications Requiring Unique EMITTER Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3 SC−70 (SOT−323) Compliant 1 CASE 419 STYLE 3 2 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM Collector−Emitter Voltage VCEO Vdc MMBT3904WT1, SMMBT3904WT1 40 MMBT3906WT1, SMMBT3906WT1 −40 xx M(cid:2) Collector−Base Voltage VCBO Vdc (cid:2) MMBT3904WT1, SMMBT3904WT1 60 MMBT3906WT1, SMMBT3906WT1 −40 1 Emitter−Base Voltage VEBO Vdc xx = AM for MMBT3904WT1, MMBT3904WT1, SMMBT3904WT1 6.0 SMMBT3904WT MMBT3906WT1, SMMBT3906WT1 −5.0 = 2A for MMBT3906WT1, SMMBT3906WT1 Collector Current − Continuous IC mAdc M = Date Code* MMBT3904WT1, SMMBT3904WT1 200 MMBT3906WT1, SMMBT3906WT1 −200 (cid:2) = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS *Date Code orientation may vary depending up- Characteristic Symbol Max Unit on manufacturing location. Total Device Dissipation (Note 1) PD 150 mW @TA = 25°C ORDERING INFORMATION Thermal Resistance, Junction−to−Ambient R(cid:2)JA 833 °C/W Device Package Shipping† Junction and Storage Temperature TJ, Tstg −55 to +150 °C MMBT3904WT1G, SC−70/ 3000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBT3904WT1G SOT−323 Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (Pb−Free) 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum MMBT3906WT1G, SC−70/ 3000 / Tape & recommended footprint. SMMBT3906WT1G SOT−323 Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2015 − Rev. 9 MMBT3904WT1/D

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1 40 − (IC = −1.0 mAdc, IB = 0) MMBT3906WT1, SMMBT3906WT1 −40 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 (cid:3)Adc, IE = 0) MMBT3904WT1, SMMBT3904WT1 60 − (IC = −10 (cid:3)Adc, IE = 0) MMBT3906WT1, SMMBT3906WT1 −40 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) MMBT3904WT1, SMMBT3904WT1 6.0 − (IE = −10 (cid:3)Adc, IC = 0) MMBT3906WT1, SMMBT3906WT1 −5.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 − −50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 − 50 (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 − −50 ON CHARACTERISTICS (Note 2) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − (IC = −0.1 mAdc, VCE = −1.0 Vdc) MMBT3906WT1, SMMBT3906WT1 60 − (IC = −1.0 mAdc, VCE = −1.0 Vdc) 80 − (IC = −10 mAdc, VCE = −1.0 Vdc) 100 300 (IC = −50 mAdc, VCE = −1.0 Vdc) 60 − (IC = −100 mAdc, VCE = −1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 (IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 − −0.25 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.4 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 (IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 −0.65 −0.85 (IC = −50 mAdc, IB = −5.0 mAdc) − −0.95 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s; Duty Cycle (cid:2) 2.0%. www.onsemi.com 2

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1 300 − (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3906WT1, SMMBT3906WT1 250 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 − 4.0 (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1 − 4.5 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 − 8.0 (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1 − 10.0 Input Impedance hie k (cid:4) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 1.0 10 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 2.0 12 Voltage Feedback Ratio hre X 10−4 (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 0.5 8.0 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 0.1 10 Small−Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 100 400 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 100 400 Output Admittance hoe (cid:3)mhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 1.0 40 (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 3.0 60 Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 (cid:3)Adc, RS = 1.0 k (cid:4), f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 − 5.0 (VCE = −5.0 Vdc, IC = −100 (cid:3)Adc, RS = 1.0 k (cid:4), f = 1.0 kHz) − 4.0 MMBT3906WT1, SMMBT3906WT1 SWITCHING CHARACTERISTICS Characteristic Condition Symbol Min Max Unit Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) td 35 ns MMBT3904WT1, SMMBT3904WT1 − 35 (VCC = −3.0 Vdc, VBE = 0.5 Vdc) − MMBT3906WT1, SMMBT3906WT1 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr 35 MMBT3904WT1, SMMBT3904WT1 − 35 (IC = −10 mAdc, IB1 = −1.0 mAdc) − MMBT3906WT1, SMMBT3906WT1 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts 200 ns MMBT3904WT1, SMMBT3904WT1 − 225 (VCC = −3.0 Vdc, IC = −10 mAdc) − MMBT3906WT1, SMMBT3906WT1 Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 tf − 50 (IB1 = IB2 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 − 75 www.onsemi.com 3

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 +3 V +3 V DUTY CYCLE = 2% 10 < t1 < 500 (cid:3)s t1 +10.9 V 300 ns +10.9 V 275 DUTY CYCLE = 2% 275 10 k 10 k 0 -(cid:2)0.5 V < 1 ns CS < 4 pF* 1N916 CS < 4 pF* -(cid:2)9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit www.onsemi.com 4

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 500 300 IC/IB = 10 300 VCC = 40 V 200 200 IC/IB = 10 100 100 s) ns) 7500 tr @ VCC = 3.0 V ME (n 7500 ME ( E TI TI 30 40 V RIS 30 20 t , r 20 15 V 10 MMBT3904WT1 10 MMBT3904WT1 7 td @ VOB = 0 V 2.0 V 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Turn−On Time Figure 4. Rise Time 500 500 300 t′s = ts - 1/8 tf 300 VCC = 40 V 200 IC/IB = 20 IC/IB = 10 IB1 = IB2 200 IB1 = IB2 IC/IB = 20 ns) 100 s) 100 ME ( 70 E (n 70 STORAGE TI 532000 IC/IB =IC 2/I0B = 10 t , FALL TIMf 532000 IC/IB = 10 ′t , s 10 10 MMBT3904WT1 MMBT3904WT1 7 7 5 5 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 12 14 SOURCE RESISTANCE = 200 (cid:4) f = 1.0 kHz 10 IC = 1.0 mA 12 IC = 1.0 mA URE (dB) 8 SICO =U 0R.5C Em ARESISTANCE = 200 (cid:4) URE (dB) 180 IC = 0.5 mA IC = 50 (cid:3)A G G E FI 6 SOURCE RESISTANCE = 1.0 k E FI IC = 100 (cid:3)A OIS IC = 50 (cid:3)A OIS 6 N N NF, 4 NF, 4 2 SOURCE RESISTANCE = 500 (cid:4) 2 IC = 100 (cid:3)A MMBT3904WT1 MMBT3904WT1 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 7. Noise Figure Figure 8. Noise Figure www.onsemi.com 5

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 h PARAMETERS (V = 10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 s) MMBT3904WT1 ho 50 MMBT3904WT1 m 200 (cid:3)E ( AIN ANC 20 G T RENT 100 ADMIT 10 R T U U C 70 P 5 h , fe OUT 50 h , oe 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. Current Gain Figure 10. Output Admittance 20 10 S) 10 MMBT3904WT1 10 )-4 7.0 MMBT3904WT1 M X OH O ( 5.0 E (k 5.0 RATI NC CK 3.0 MPEDA 2.0 EEDBA 2.0 UT I 1.0 E F P G N A h , Iie 0.5 h , VOLTre 10..07 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 1000 VCE = 1 V N TJ = 150°C AI T G 25°C N E R -(cid:2)55°C R U 100 C C D , E F h MMBT3904WT1 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain www.onsemi.com 6

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TS) 1.0 L VO MMBT3904WT1 TJ = 25°C E ( G 0.8 TA IC = 1.0 mA 10 mA 30 mA 100 mA L O V R 0.6 E T T MI E R 0.4 O T C E L OL 0.2 C V , CE 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region 0.9 1.4 , COLLECTOR−EMITTERE(sat)SATURATION VOLTAGE (V)0000000.......3457826 IC/IB = 10 25°C150°C−55°C V, BASE−EMITTERBE(sat)SATURATION VOLTAGE (V) 00011.....46802 −1255550°°°ICCCC/IB = 10 VC 0.1 0 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Collector Emitter Saturation Voltage Figure 16. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current 1.4 V) E ( VCE = 1 V G 1.2 A T L O V 1.0 R E −55°C T T 0.8 MI E 25°C − E 0.6 S A B , n) 0.4 150°C o E( B V 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 17. Base Emitter Voltage vs. Collector Current www.onsemi.com 7

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TJ = 25°C TJ = 125°C 1.0 10 MMBT3904WT1 MMBT3904WT1 0.5 +25°C TO +125°C 7.0 °mV/ C) 0 (cid:2)VC FOR VCE(sat) -(cid:2)55°C TO +25°C E (pF) 5.0 NT ( ANC Cibo CIE -(cid:2)0.5 CIT 3.0 COEFFI -(cid:2)1.0 +-2(cid:2)555°°CC T TOO + +12255°°CC CAPA 2.0 Cobo -(cid:2)1.5 (cid:2)VB FOR VBE(sat) -(cid:2)2.0 1.0 0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.010 20 30 40 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS) Figure 18. Temperature Coefficients Figure 19. Capacitance 1000 1 100 mS 10 mS WIDTH VTAC E= =2 51° CV T (A) 1 mS D N 1 S AIN−BANCT (MHz)100 R CURRE 0.1 GU O −D T Thermal Limit TO C NR E 0.01 REP LL R O U C , CT I, C f 10 0.001 0.1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 20. Current Gain Bandwidth Product Figure 21. Safe Operating Area vs. Collector Current www.onsemi.com 8

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 3 V 3 V < 1 ns +(cid:2)9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* 1N916 CS < 4 pF* +10.6 V DUTY 3C0Y0C nLsE = 2% 10 < t1 < 500 (cid:3)s t1 10.9 V DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 22. Delay and Rise Time Figure 23. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 500 300 MMBT3906WT1 IC/IB = 10 300 MMBT3906WT1 VCC = 40 V 200 200 IB1 = IB2 IC/IB = 20 100 s) 100 n E (ns) 7500 tr @ VCC = 3.0 V LL TIME ( 7500 TIM 3200 15 V t , FAf 3200 IC/IB = 10 40 V 10 2.0 V 10 7 7 td @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 24. Turn−On Time Figure 25. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = −5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 5.0 12 SOURCE RESISTANCE = 200 (cid:4) f = 1.0 kHz IC = 1.0 mA IC = 1.0 mA 10 4.0 B) SOURCE RESISTANCE = 200 (cid:4) B) IC = 0.5 mA E (d IC = 0.5 mA E (d 8.0 R 3.0 R U U G SOURCE RESISTANCE = 2.0 k G E FI IC = 50 (cid:3)A E FI 6.0 OIS 2.0 OIS F, N F, N 4.0 IC = 50 (cid:3)A N N 1.0 SICO =U 1R0C0E (cid:3) RAESISTANCE = 2.0 k 2.0 IC = 100 (cid:3)A MMBT3906WT1 MMBT3906WT1 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k(cid:4)) Figure 26. Figure 27. www.onsemi.com 9

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 h PARAMETERS (V = −10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 MMBT3906WT1 os) 70 MMBT3906WT1 h m 50 200 (cid:3)E ( N C AI N 30 G A T TT REN 100 DMI 20 UR T A C 70 U , e TP hf 50 OU 10 h , oe 7.0 30 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 28. Current Gain Figure 29. Output Admittance 20 10 10 MMBT3906WT1 0 )-4 7.0 MMBT3906WT1 1 ΩANCE (k ) 375...000 K RATIO (X 35..00 D 2.0 C PE BA 2.0 M D UT I 1.0 FEE h , INPie 00..75 OLTAGE 1.0 V 0.7 00..32 h , re 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 30. Input Impedance Figure 31. Voltage Feedback Ratio STATIC CHARACTERISTICS 1000 VCE = 1 V N TJ = 150°C AI G 25°C T N E RR -(cid:2)55°C U 100 C C D , E F h MMBT3906WT1 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 32. DC Current Gain www.onsemi.com 10

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 S) 1.0 T VOL MMBT3906WT1 TJ = 25°C E ( 0.8 G TA IC = 1.0 mA 10 mA 30 mA 100 mA L O V R 0.6 E T T MI R E 0.4 O T C E LL 0.2 O C V , CE 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 33. Collector Saturation Region 0.50 1.4 R 0.45 IC/IB = 10 IC/IB = 10 , COLLECTOR−EMITTEE(sat)SATURATION VOLTAGE (V)0000000.......12241335050005 25°C 150°C−55°C V, BASE−EMITTERBE(sat)SATURATION VOLTAGE (V) 00011.....46802 1−525055°°CC°C C V 0.05 0 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 34. Collector Emitter Saturation Voltage Figure 35. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current 1.4 V) E ( VCE = 1 V G 1.2 A T L O V 1.0 R TE −55°C T 0.8 MI E 25°C − E 0.6 S A B , n) 0.4 150°C o E( B V 0.2 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 36. Base Emitter Voltage vs. Collector Current www.onsemi.com 11

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 TJ = 25°C TJ = 125°C 1.0 10 °C) MMBT3906WT1 V/ 7.0 m 0.5 S ( (cid:2)VC FOR VCE(sat) +25°C TO +125°C T EFFICIEN 0 -(cid:2)55°C TO +25°C NCE (pF) 5.0 CCobiboo RE CO -0.5 MMBT3906WT1 +25°C TO +125°C PACITA 3.0 ERATU -1.0 (cid:2)VS FOR VBE(sat) -(cid:2)55°C TO +25°C CA 2.0 P M -1.5 E T , V θ -2.0 1.0 0 20 40 60 80 100 120 140 160 180 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.010 20 30 40 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS) Figure 37. Temperature Coefficients Figure 38. Capacitance 1000 1 100 mS 10 mS WIDTH VTAC E= =2 51° CV T (A) D N 1 mS AIN−BANCT (MHz)100 R CURRE 0.1 1 S GU O −D T Thermal Limit TO C NR E 0.01 REP LL R O U C , CT I, C f 10 0.001 0.1 1 10 100 1000 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Current Gain Bandwidth Product Figure 40. Safe Operating Area vs. Collector Current www.onsemi.com 12

MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. e1 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.032 0.035 0.040 HE E A1 0.00 0.05 0.10 0.000 0.002 0.004 1 2 A2 0.70 REF 0.028 REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 b E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e e1 0.65 BSC 0.026 BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 c STYLE 3: A A2 PIN 1.BASE 2.EMITTER 3.COLLECTOR 0.05 (0.002) L A1 SOLDERING FOOTPRINT* 0.65 0.65 0.025 0.025 1.9 0.075 0.9 0.035 0.7 0.028 (cid:3) (cid:4) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com MMBT3904WT1/D 13

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