MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier www.onsemi.com applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. GENERAL PURPOSE Features AMPLIFIER TRANSISTORS • S Prefix for Automotive and Other Applications Requiring Unique SURFACE MOUNT Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−416/SC−75 CASE 463 STYLE 1 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit COLLECTOR Collector − Emitter Voltage VCEO 40 Vdc 3 Collector − Base Voltage VCBO 60 Vdc 1 Emitter − Base Voltage VEBO 6.0 Vdc BASE Collector Current − Continuous IC 200 mAdc THERMAL CHARACTERISTICS 2 EMITTER Characteristic Symbol Max Unit Total Device Dissipation, PD MARKING DIAGRAM FR−4 Board (Note 1) @TA = 25°C 200 mW Derated above 25°C 1.6 mW/°C T(Nhoetrem 1a)l Resistance, Junction−to−Ambient R(cid:2)JA 600 °C/W AM M(cid:2) (cid:2) Total Device Dissipation, PD FR−4 Board (Note 2) @TA = 25°C 300 mW 1 Derated above 25°C 2.4 mW/°C AM = Device Code Thermal Resistance, Junction−to−Ambient R(cid:2)JA 400 °C/W M = Date Code* (Note 2) (cid:2) = Pb−Free Package Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending up- device. If any of these limits are exceeded, device functionality should not be on manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping† MMBT3904TT1G SOT−416 3,000 Tape & Reel (Pb−Free) SMMBT3904TT1G SOT−416 3,000 Tape & Reel (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please †For information on tape and reel specifications, download the ON Semiconductor Soldering and Mounting Techniques including part orientation and tape sizes, please Reference Manual, SOLDERRM/D. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: June, 2017 − Rev. 6 MMBT3904TT1/D

MMBT3904TT1G, SMMBT3904TT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 40 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 (cid:3)Adc, IE = 0) 60 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 6.0 − Base Cutoff Current IBL nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) − 50 Collector Cutoff Current ICEX nAdc (VCE = 30 Vdc, VEB = 3.0 Vdc) − 50 ON CHARACTERISTICS (Note 3) DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 300 − Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − 4.0 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 8.0 Input Impedance hie k (cid:4) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 1.0 10 Voltage Feedback Ratio hre X 10−4 (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 Small−Signal Current Gain hfe − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 100 400 Output Admittance hoe (cid:3)mhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 1.0 40 Noise Figure NF dB (VCE = 5.0 Vdc, IC = 100 (cid:3)Adc, RS = 1.0 k (cid:4), f = 1.0 kHz) − 5.0 SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc) td MMBT3904TT1G, SMMBT3904TT1G − 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr MMBT3904TT1G, SMMBT3904TT1G − 35 ns Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts MMBT3904TT1G, SMMBT3904TT1G − 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf MMBT3904TT1G, SMMBT3904TT1G − 50 3. Pulse Test: Pulse Width (cid:2)300(cid:3)s, Duty Cycle (cid:2)2.0%. www.onsemi.com 2

MMBT3904TT1G, SMMBT3904TT1G CE 1.0 AN D = 0.5 T S SI E 0.2 R L 0.1 MA 0.1 R 0.05 E H T T 0.02 N E SI AN 0.01 0.01 R T D E Z SINGLE PULSE LI A M R 0.001 O N 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 r(t), t, TIME (s) Figure 1. Normalized Thermal Response +3 V +3 V DUTY CYCLE = 2% 10 < t1 < 500 (cid:3)s t1 +10.9 V 300 ns +10.9 V 275 DUTY CYCLE = 2% 275 10 k 10 k 0 -(cid:2)0.5 V < 1 ns CS < 4 pF* 1N916 CS < 4 pF* -(cid:2)9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 2. Delay and Rise Time Figure 3. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 3000 VCC = 40 V 7.0 IC/IB = 10 2000 CE (pF) 5.0 E (pC) 1700000 CITAN 3.0 Cibo HARG 500 APA Q, C 300 QT C 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.010 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 4. Capacitance Figure 5. Charge Data www.onsemi.com 3

MMBT3904TT1G, SMMBT3904TT1G 500 500 300 IC/IB = 10 300 VCC = 40 V 200 200 IC/IB = 10 100 100 s) ns) 7500 tr @ VCC = 3.0 V ME (n 7500 ME ( E TI TI 30 40 V RIS 30 20 t , r 20 15 V 10 10 7 td @ VOB = 0 V 2.0 V 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Turn−On Time Figure 7. Rise Time 500 500 300 t′s = ts - 1/8 tf 300 VCC = 40 V 200 IC/IB = 20 IC/IB = 10 IB1 = IB2 200 IB1 = IB2 IC/IB = 20 ns) 100 s) 100 ME ( 70 E (n 70 STORAGE TI 532000 IC/IB =IC 2/I0B = 10 t , FALL TIMf 532000 IC/IB = 10 ′t , s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Storage Time Figure 9. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 12 14 SOURCE RESISTANCE = 200 (cid:4) f = 1.0 kHz 10 IC = 1.0 mA 12 IC = 1.0 mA URE (dB) 8 SICO =U 0R.5C Em ARESISTANCE = 200 (cid:4) URE (dB) 180 IC = 0.5 mA IC = 50 (cid:3)A G G E FI 6 SOURCE RESISTANCE = 1.0 k E FI IC = 100 (cid:3)A OIS IC = 50 (cid:3)A OIS 6 N N NF, 4 NF, 4 2 SOURCE RESISTANCE = 500 (cid:4) 2 IC = 100 (cid:3)A 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 10. Noise Figure Figure 11. Noise Figure www.onsemi.com 4

MMBT3904TT1G, SMMBT3904TT1G h PARAMETERS (V = 10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 s) o h 50 m 200 (cid:3)E ( AIN ANC 20 G T RENT 100 ADMIT 10 R T U U C 70 P 5 h , fe OUT 50 h , oe 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. Current Gain Figure 13. Output Admittance 20 10 S) 10 10 )-4 7.0 M X OH O ( 5.0 E (k 5.0 RATI NC CK 3.0 MPEDA 2.0 EEDBA 2.0 UT I 1.0 E F P G N A h , Iie 0.5 h , VOLTre 10..07 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 14. Input Impedance Figure 15. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 2.0 ZED) TJ = +125°C MMBT3904WT1 VCE = 1.0 V LI MA 1.0 +25°C R O N N ( 0.7 AI -(cid:2)55°C G 0.5 T N E R R 0.3 U C C D 0.2 h , FE 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 16. DC Current Gain www.onsemi.com 5

MMBT3904TT1G, SMMBT3904TT1G TS) 1.0 L VO TJ = 25°C E ( G 0.8 TA IC = 1.0 mA 10 mA 30 mA 100 mA L O V R 0.6 E T T MI E R 0.4 O T C E L OL 0.2 C V , CE 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 17. Collector Saturation Region 1.2 1.0 TJ = 25°C 1.0 VBE(sat) @ IC/IB =10 0.5 +25°C TO +125°C OLTS) 0.8 °mV/ C) 0 (cid:2)VC FOR VCE(sat) -(cid:2)55°C TO +25°C E (V VBE @ VCE =1.0 V NT ( G 0.6 E -(cid:2)0.5 OLTA FFICI -(cid:2)55°C TO +25°C V, V 0.4 VCE(sat) @ IC/IB =10 COE -(cid:2)1.0 +25°C TO +125°C 0.2 -(cid:2)1.5 (cid:2)VB FOR VBE(sat) 0 -(cid:2)2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 18. “ON” Voltages Figure 19. Temperature Coefficients www.onsemi.com 6

MMBT3904TT1G, SMMBT3904TT1G PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE G −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 MILLIMETERS INCHES 3 e −D− DIM MIN NOM MAX MIN NOM MAX A 0.70 0.80 0.90 0.027 0.031 0.035 1 A1 0.00 0.05 0.10 0.000 0.002 0.004 b3 PL b 0.15 0.20 0.30 0.006 0.008 0.012 0.20 (0.008) M D C 0.10 0.15 0.25 0.004 0.006 0.010 HE 0.20 (0.008) E DE 10..5750 10..6800 10..6950 00..006217 00..006331 00..006355 e 1.00 BSC 0.04 BSC L 0.10 0.15 0.20 0.004 0.006 0.008 HE 1.50 1.60 1.70 0.060 0.063 0.067 C STYLE 1: A PIN 1.BASE 2.EMITTER 3.COLLECTOR L A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.787 0.071 0.031 0.508 0.020 1.000 0.039 (cid:3) (cid:4) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBT3904TT1/D 7

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