MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant • S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements; AEC−Q101 Qualified and 3 PPAP Capable 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector−Emitter Voltage VCEO 40 Vdc EMITTER Collector−Base Voltage VCBO 60 Vdc Emitter−Base Voltage VEBO 6.0 Vdc 3 Collector Current − Continuous IC 200 mAdc SOT−23 (TO−236) CASE 318 Collector Current − Peak (Note 3) ICM 900 mAdc 1 STYLE 6 THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board PD MARKING DIAGRAM (Note 1) @TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W 1AMM(cid:2) (cid:2) Total Device Dissipation Alumina PD Substrate, (Note 2) 1 @TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C 1AM = Specific Device Code Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W M(cid:2) == PDba−teF Creoed Pe*ackage Junction and Storage Temperature TJ, Tstg −55 to +150 °C (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation and/or overbar may device. If any of these limits are exceeded, device functionality should not be vary depending upon manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. 3. Reference SOA curve. ORDERING INFORMATION Device Package Shipping† MMBT3904LT1G SOT−23 3000 / Tape & SMMBT3904LT1G (Pb−Free) Reel MMBT3904LT3G SOT−23 10,000 / Tape & SMMBT3904LT3G (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 13 MMBT3904LT1/D

MMBT3904L, SMMBT3904L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 (cid:3)Adc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 (cid:3)Adc, IC = 0) V(BR)EBO 6.0 − Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc ON CHARACTERISTICS (Note 4) DC Current Gain HFE − (IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 − (IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 − (IC = 10 mAdc, VCE = 1.0 Vdc) 100 300 (IC = 50 mAdc, VCE = 1.0 Vdc) 60 − (IC = 100 mAdc, VCE = 1.0 Vdc) 30 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) − 0.2 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.3 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85 (IC = 50 mAdc, IB = 5.0 mAdc) − 0.95 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 k(cid:4) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10−4 Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 (cid:3)mhos Noise Figure (VCE = 5.0 Vdc, IC = 100 (cid:3)Adc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 5.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc, td − 35 ns Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, ts − 200 ns Fall Time IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. +3 V +3 V DUTY CYCLE = 2% 10 < t1 < 500 (cid:3)s t1 +10.9 V 300 ns +10.9 V 275 DUTY CYCLE = 2% 275 10 k 10 k 0 -(cid:2)0.5 V < 1 ns CS < 4 pF* 1N916 CS < 4 pF* -(cid:2)9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit www.onsemi.com 2

MMBT3904L, SMMBT3904L TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 3000 VCC = 40 V 7.0 IC/IB = 10 2000 CE (pF) 5.0 E (pC) 1700000 CITAN 3.0 Cibo HARG 500 APA Q, C 300 QT C 2.0 Cobo 200 QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.010 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 500 500 300 IC/IB = 10 300 VCC = 40 V IC/IB = 10 200 200 100 100 s) ns) 7500 tr @ VCC = 3.0 V ME (n 7500 ME ( E TI TI 30 40 V RIS 30 20 t , r 20 15 V 10 10 2.0 V 7 td @ VOB = 0 V 7 5 5 1.0 2.0 3.0 5.0 7.010 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.010 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Rise Time 500 500 300 t′s = ts - 1/8 tf 300 VCC = 40 V 200 IC/IB = 20 IC/IB = 10 IB1 = IB2 200 IB1 = IB2 IC/IB = 20 ME (ns) 17000 E (ns) 17000 STORAGE TI 325000 IC/IB =IC 2/I0B = 10 t , FALL TIMf 325000 IC/IB = 10 ′t , s 10 10 7 7 5 5 1.0 2.0 3.0 5.0 7.010 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.010 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time www.onsemi.com 3

MMBT3904L, SMMBT3904L TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 12 14 SOURCE RESISTANCE = 200 (cid:4) f = 1.0 kHz 10 IC = 1.0 mA 12 IC = 1.0 mA URE (dB) 8 SICO =U 0R.5C Em ARESISTANCE = 200 (cid:4) URE (dB) 10 IC = 0.5 mA IC = 50 (cid:3)A G G 8 E FI 6 SOURCE RESISTANCE = 1.0 k E FI IC = 100 (cid:3)A OIS IC = 50 (cid:3)A OIS 6 N N F, 4 F, N N 4 2 SOURCE RESISTANCE = 500 (cid:4) 2 IC = 100 (cid:3)A 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Figure 10. h PARAMETERS (V = 10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 s) o mh 50 200 (cid:3)E ( AIN ANC 20 G T NT MIT E D 10 R 100 A R T U U h , Cfe 70 OUTP 5 50 h , oe 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain Figure 12. Output Admittance 20 10 S) 10 10 )-4 7.0 M X OH O ( 5.0 E (k 5.0 RATI NC CK 3.0 DA BA MPE 2.0 EED 2.0 UT I 1.0 E F P G N A h , Iie 0.5 h , VOLTre 01..70 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio www.onsemi.com 4

MMBT3904L, SMMBT3904L TYPICAL STATIC CHARACTERISTICS 1000 TJ = +150°C VCE = 1.0 V N +25°C AI 100 T G -(cid:2)55°C N E R R U C C 10 D h , FE 1 0.1 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain TS) 1.0 L VO TJ = 25°C E ( G 0.8 TA IC = 1.0 mA 10 mA 30 mA 100 mA L O V R 0.6 E T T MI E R 0.4 O T C E L OL 0.2 C V , CE 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region www.onsemi.com 5

MMBT3904L, SMMBT3904L 0.8 1.4 , COLLECTOR−EMITTERE(sat)SATURATION VOLTAGE (V)000000......234675 IC/IB = 10 25°1C50°C −55°C V, BASE−EMITTERBE(sat)SATURATION VOLTAGE (V) 00011.....46802 1−25I5C505/°°I°BCCC = 10 C 0.1 V 0 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector Emitter Saturation Voltage Figure 18. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current 1.4 1.0 V) E ( AG 1.2 VCE = 1 V 0.5 +25°C TO +125°C T OL C) (cid:2)VC FOR VCE(sat) R V 1.0 °mV/ 0 -(cid:2)55°C TO +25°C −EMITTE 0.8 −2555°°CC FFICIENT ( -(cid:2)0.5 -(cid:2)55°C TO +25°C SE 0.6 OE -(cid:2)1.0 A C +25°C TO +125°C B , n) 0.4 150°C -(cid:2)1.5 (cid:2)VB FOR VBE(sat) o E( B V 0.2 -(cid:2)2.0 0.0001 0.001 0.01 0.1 1 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 19. Base Emitter Voltage vs. Collector Figure 20. Temperature Coefficients Current 1000 1 1 ms TH VCE = 1 V 1 s 10 ms WID TA = 25°C 100 ms D Thermal Limit ANHz) 0.1 BM N−T ( A) GAIUC100 C ( −D I TO NR 0.01 EP R R U f, CT 10 0.001 S@in TgAle = P 2u5ls°eC Test 0.1 1 10 100 1000 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) VCE (Vdc) Figure 21. Current Gain Bandwidth vs. Figure 22. Safe Operating Area Collector Current www.onsemi.com 6

MMBT3904L, SMMBT3904L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBT3904LT1/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MMBT3904LT1G MMBT3904LT3G