MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MARKING • DIAGRAM These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOT−23 xxxM(cid:2) CASE 318 (cid:2) STYLE 6 MAXIMUM RATINGS 1 Rating Symbol Value Unit xxx = M1J or 1JA Collector−Emitter Voltage VCEO 15 Vdc M = Date Code* (cid:2) = Pb−Free Package Collector−Emitter Voltage VCES 40 Vdc (Note: Microdot may be in either location) Collector−Base Voltage VCBO 40 Vdc *Date Code orientation and/or overbar may vary depending upon manufacturing location. Emitter−Base Voltage VEBO 4.5 Vdc Collector Current − Continuous IC 200 mAdc COLLECTOR THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit To(taNlo Dtee v1i)c eT AD =is 2si5p°aCtion FR−5 Board PD 225 mW 1 Derate above 25°C 1.8 mW/°C BASE Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W 2 EMITTER Total Device Dissipation Alumina PD Substrate, (Note 2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction−to−Ambient R(cid:2)JA 417 °C/W ORDERING INFORMATION Junction and Storage Temperature TJ, Tstg −55 to +150 °C Device Package Shipping† Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MMBT2369LT1G SOT−23 3,000 / assumed, damage may occur and reliability may be affected. (Pb−Free) Tape & Reel 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. MMBT2369LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SMMBT2369LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel MMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SMMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2018 − Rev. 11 MMBT2369LT1/D

MMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) 15 − − Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = 10 (cid:3)Adc, VBE = 0) 40 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 (cid:3)Adc, IE = 0) 40 − − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 4.5 − − Collector Cutoff Current ICBO (cid:3)Adc (VCB = 20 Vdc, IE = 0) − − 0.4 (VCB = 20 Vdc, IE = 0, TA = 150°C) − − 30 Collector Cutoff Current ICES (cid:3)Adc MMBT2369A (VCE = 20 Vdc, VBE = 0) − − 0.4 ON CHARACTERISTICS DC Current Gain (Note 3) hFE − MMBT2369 (IC = 10 mAdc, VCE = 1.0 Vdc) 40 − 120 MMBT2369A (IC = 10 mAdc, VCE = 1.0 Vdc) − − 120 MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc) 40 − − MMBT2369A (IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C) 20 − − MMBT2369A (IC = 30 mAdc, VCE = 0.4 Vdc) 30 − − MMBT2369 (IC = 100 mAdc, VCE = 2.0 Vdc) 20 − − MMBT2369A (IC = 100 mAdc, VCE = 1.0 Vdc) 20 − − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc MMBT2369 (IC = 10 mAdc, IB = 1.0 mAdc) − − 0.25 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc) − − 0.20 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) − − 0.30 MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) − − 0.25 MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) − − 0.50 Base−Emitter Saturation Voltage (Note 3) VBE(sat) Vdc MMBT2369/A (IC = 10 mAdc, IB = 1.0 mAdc) 0.7 − 0.85 MMBT2369A (IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C) − − 1.02 MMBT2369A (IC = 30 mAdc, IB = 3.0 mAdc) − − 1.15 MMBT2369A (IC = 100 mAdc, IB = 10 mAdc) − − 1.60 SMALL−SIGNAL CHARACTERISTICS Output Capacitance Cobo pF (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) − − 4.0 Small Signal CurrentGain hfe − (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 5.0 − − SWITCHING CHARACTERISTICS Storage Time ts ns (IB1 = IB2 = IC = 10 mAdc) − 5.0 13 Turn−On Time ton ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) − 8.0 12 Turn−Off Time toff ns (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) − 10 18 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width(cid:2)300(cid:3)s, Duty Cycle(cid:2)2.0%. www.onsemi.com 2

MMBT2369L, MMBT2369AL +10.6 V t1 3 V 270 (cid:4) +10.8 V t1 10 V 95 (cid:4) 0 0 -1.5 V < 1 ns 3.3 k Cs* < 4 pF -2 V < 1 ns 1 k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 1. ton Circuit − 10 mA Figure 2. ton Circuit − 100 mA +10.75 V t1 270 (cid:4) +11.4 V t1 10 V 95 (cid:4) 0 0 -9.15 V -8.6 V < 1 ns 3.3 k Cs* < 4 pF < 1 ns 1 k Cs* < 12 pF PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) BETWEEN 1N916 DUTY CYCLE = 2% 10 AND 500 (cid:3)s DUTY CYCLE = 2% *Total shunt capacitance of test jig and connectors. Figure 3. toff Circuit − 10 mA Figure 4. toff Circuit − 100 mA TO OSCILLOSCOPE TURN-ON WAVEFORMS INPUT IMPEDANCE = 50 (cid:4) 0Vin 10% 220 (cid:4) 0.1 (cid:3)F Vout RISE TTUIMREN -=O 1F nFs WAVEFORMS ton Vout 90% Vin 3.3 k(cid:4) 3.3 k 50 (cid:4) 0 Vin 10% 0.0023 (cid:3)F 0.0023 (cid:3)F 90% PULSE GENERATOR 50 (cid:4) 0.005 (cid:3)F 0.005 (cid:3)F Vout (cid:2)Vin RISE TIME < 1 ns (cid:2)(cid:2)PSWOU ≥R 3C0E0 InMsPEDANCE = 50 (cid:4) VBB+- 0.1 (cid:3)F 0.1 (cid:3)F +-VCC = 3 V toff VViBnB = = - +1152 V V (cid:2)DUTY CYCLE < 2% Figure 5. Turn−On and Turn−Off Time Test Circuit www.onsemi.com 3

MMBT2369L, MMBT2369AL 6 100 5 TJ = 25°C LIMIT βF = 10 TYPICAL 50 VCC = 10 V 4 c) VOB = 2 V e CE (pF) 3 Cib Cob MES (ns 20 tr (VCC = 3 V) tf VCC = 10 V TAN G TI tr ACI 2 HIN 10 CAP WITC S 5 ts td 1 2 0.1 0.2 0.5 1.0 2.0 5.0 10 1 2 5 10 20 50 100 REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 6. Junction Capacitance Variations Figure 7. Typical Switching Times C < COPT +6 V t1 10 V 980 C = 0 0 C COPT -4 V < 1 ns 500 Cs* < 3 pF TIME PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% Figure 8. Turn−Off Waveform Figure 9. Storage Time Equivalent Test Circuit S) T OL 1.0 V E ( G LTA TJ = 25°C O 0.8 V R IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA E T T MI E 0.6 - R O T C E L OL 0.4 C M U M XI A 0.2 M , E 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 VC IB, BASE CURRENT (mA) Figure 10. Maximum Collector Saturation Voltage Characteristics www.onsemi.com 4

MMBT2369L, MMBT2369AL 200 GAIN TJ = 125°C VCE = 1 V T 75°C N 100 RE 25°C R DC CU -15°C TJ = 25°C and 75°C M 50 U M NI MI -55°C , E F h 20 1 2 5 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 11. Minimum Current Gain Characteristics 1.4 S) βF = 10 OLT 1.2 TJ = 25°C V AGE ( 1.0 MAX VBE(sat) T L O V N 0.8 MIN VBE(sat) O TI A R U 0.6 T A S V, (sat) 0.4 MAX VCE(sat) 0.2 1 2 5 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 12. Saturation Voltage Limits www.onsemi.com 5

MMBT2369L, MMBT2369AL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com MMBT2369LT1/D 6

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