MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique SC−70 CASE 419 Site and Control Change Requirements STYLE 3 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector−Emitter Voltage VCEO 40 Vdc BASE Collector−Base Voltage VCBO 75 Vdc 2 Emitter−Base Voltage VEBO 6.0 Vdc EMITTER Collector Current − Continuous IC 600 mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board PD 150 mW P1 M(cid:2) TA = 25°C (cid:2) Thermal Resistance, Junction−to−Ambient R(cid:2)JA 280 °C/W 1 Junction and Storage Temperature TJ, Tstg −55 to +150 °C P1 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code device. If any of these limits are exceeded, device functionality should not be (cid:2) = Pb−Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MMBT2222AWT1G SC−70 3,000 / (Pb−Free) Tape & Reel SMMBT2222AWT1G SC−70 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: July, 2018 − Rev. 8 MMBT2222AWT1/D

MMBT2222AWT1G, SMMBT2222AWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) 40 − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 (cid:3)Adc, IE = 0) 75 − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 6.0 − Base Cutoff Current IBL nAdc (VCE = 60 Vdc, VEB = 3.0 Vdc) − 20 Collector Cutoff Current ICEX nAdc (VCE = 60 Vdc, VEB = 3.0 Vdc) − 10 ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) HFE − (IC = 0.1 mAdc, VCE = 10 Vdc) 35 − (IC = 1.0 mAdc, VCE = 10 Vdc) 50 − (IC = 10 mAdc, VCE = 10 Vdc) 75 − (IC = 150 mAdc, VCE = 10 Vdc) 100 300 (IC = 500 mAdc, VCE = 10 Vdc) 40 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) − 0.3 (IC = 500 mAdc, IB = 50 mAdc) − 1.0 Base−Emitter Saturation Voltage (Note 1) VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2 (IC = 500 mAdc, IB = 50 mAdc) − 2.0 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) 300 − Output Capacitance Cobo pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 8.0 Input Capacitance Cibo pF (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) − 30 Input Impedance hie k(cid:4) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 0.25 1.25 Voltage Feedback Ratio hre X 10−4 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) − 4.0 Small−Signal Current Gain hfe − (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 75 375 Output Admittance hoe (cid:3)mhos (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 25 200 Noise Figure NF dB (VCE = 10 Vdc, IC = 100 (cid:3)Adc, RS = 1.0 k(cid:4), f = 1.0 kHz) − 4.0 SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc, td − 10 ns Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr − 25 Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns Fall Time IB1 = IB2 = 15 mAdc) tf − 60 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width(cid:2)300(cid:3)s, Duty Cycle(cid:2)2.0%. www.onsemi.com 2

MMBT2222AWT1G, SMMBT2222AWT1G SWITCHING TIME EQUIVALENT TEST CIRCUITS +(cid:2)30 V +(cid:2)30 V 1.0 to 100 (cid:3)s, 200 1.0 to 100 (cid:3)s, 200 +16 V DUTY CYCLE ≈ 2.0% +16 V DUTY CYCLE ≈ 2.0% 0 0 -(cid:2)2 V < 2 ns 1 k(cid:4) CS* < 10 pF -14 V < 20 ns 1 k CS* < 10 pF 1N914 Scope rise time < 4 ns -(cid:2)4 V *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time 1000 700 500 TJ = 125°C N 300 AI G 200 T N E 25°C R R 100 U C C 70 -55°C D 50 , E F h 30 VCE = 1.0 V 20 VCE = 10 V 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain S) 1.0 T OL TJ = 25°C V GE ( 0.8 A T L O V R 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA E T T MI E - 0.4 R O T C E LL 0.2 O C , E C 50 V 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) Figure 4. Collector Saturation Region www.onsemi.com 3

MMBT2222AWT1G, SMMBT2222AWT1G 200 500 17000 ITCJ/ I=B 2=5 1°0C 230000 t′s = ts - 1/8 tf VIICBC1/IC B= = =IB 31200 V 50 tr @ VCC = 30 V TJ = 25°C td @ VEB(off) = 2.0 V 100 ME (ns) 3200 td @ VEB(off) = 0 ME (ns) 5700 tf t, TI 10 t, TI 30 20 7.0 5.0 10 3.0 7.0 2.0 5.0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.010 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn−On Time Figure 6. Turn−Off Time 10 10 RS = OPTIMUM f = 1.0 kHz NF, NOISE FIGURE (dB) 486...000 1I55C000 00 =(cid:3) (cid:3)(cid:3)1A.AA,0 ,,R mRRSA SS= ,== 4R 22.S00. 0 =0k (cid:4) k1(cid:4)(cid:4)50 (cid:4) RRSS == SROESUIRSCTAENCE NF, NOISE FIGURE (dB) 486...000 I151C00.0 00= m (cid:3)(cid:3)5A0AA (cid:3)A 2.0 2.0 0 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 Hz) 500 M T ( VCE = 20 V 20 UC TJ = 25°C OD 300 F) Ceb PR NCE (p 10 WIDTH 200 CITA 7.0 AND A B CAP 5.0 GAIN 100 Ccb NT- 3.0 RE 70 R U C 2.0 , T 50 0.1 0.2 0.3 0.50.71.0 2.0 3.0 5.07.0 10 20 30 50 f 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product www.onsemi.com 4

MMBT2222AWT1G, SMMBT2222AWT1G 1 1.3 R IC/IB = 10 1.2 IC/IB = 10 E EMITTGE (V) 150°C TTERGE (V) 11..01 , COLLECTOR−at)TURATION VOLTA0.1 −55°C , BASE−EMIBE(sat)TURATION VOLTA 00000.....57869 −1255550°°°CCC CE(sSA 25°C VSA 0.4 V 0.3 0.01 0.2 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage Figure 12. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current 1.2 +0.5 V) E ( 1.1 VCE = 1 V AG 1.0 0 R(cid:2)VC for VCE(sat) T R VOL 00..98 −55°C °mV/ C) -(cid:2)0.5 MITTE 0.7 25°C CIENT ( -(cid:2)1.0 E 0.6 FI − F E E -(cid:2)1.5 AS 0.5 150°C CO B , n) 0.4 -(cid:2)2.0 R(cid:2)VB for VBE E(o 0.3 B V 0.2 -(cid:2)2.5 0.001 0.01 0.1 1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 13. Base Emitter Voltage vs. Collector Figure 14. Temperature Coefficients Current 10 10 ms 100 ms 1 1 ms 1 s Thermal Limit A) C ( 0.1 I 0.01 Single Pulse Test 0.001 @ TA = 25°C 0.01 0.1 1 10 100 VCE (Vdc) Figure 15. Safe Operating Area www.onsemi.com 5

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N DATE 11 NOV 2008 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. e1 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.032 0.035 0.040 HE E A1 0.00 0.05 0.10 0.000 0.002 0.004 1 2 A2 0.70 REF 0.028 REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 b E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e e1 0.65 BSC 0.026 BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 c A A2 GENERIC 0.05 (0.002) MARKING DIAGRAM L A1 SOLDERING FOOTPRINT* XX M(cid:2) (cid:2) 0.65 0.65 0.025 1 0.025 XX = Specific Device Code M = Date Code (cid:2) = Pb−Free Package 1.9 *This information is generic. Please refer to 0.075 device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ (cid:2)”, 0.9 may or may not be present. 0.035 0.7 0.028 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: CANCELLED PIN 1.ANODE PIN 1.BASE PIN 1.CATHODE PIN 1.ANODE 2.N.C. 2.EMITTER 2.CATHODE 2.ANODE 3.CATHODE 3.COLLECTOR 3.ANODE 3.CATHODE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11: PIN 1.EMITTER PIN 1.BASE PIN 1.GATE PIN 1.ANODE PIN 1.CATHODE PIN 1.CATHODE 2.BASE 2.EMITTER 2.SOURCE 2.CATHODE 2.ANODE 2.CATHODE 3.COLLECTOR 3.COLLECTOR 3.DRAIN 3.CATHODE-ANODE 3.ANODE-CATHODE 3.CATHODE DOCUMENT NUMBER: 98ASB42819B Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped “CONTROLLED COPY” in red. NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 http://onsemi.com Case Outline Number: October, D20E0S2C −R RIePvT. I0ON: SC−70 (SOT−323) 1 PAGE 1 OFX 2XX

DOCUMENT NUMBER: 98ASB42819B PAGE 2 OF 2 ISSUE REVISION DATE M ADDED NOMINAL VALUES AND UPDATED GENERIC MARKING DIAGRAM. REQ. 27 MAY 2005 BY HONG XIAO N CHANGED DIMENSION L VALUES TO 0.20, 0.38, 0.56 MM & 0.008, 0.015, 0.022 11 NOV 2008 INCH. REQ. BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. © Semiconductor Components Industries, LLC, 2008 Case Outline Number: November, 2008 − Rev. 04N 419

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