Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M M B January 2015 F J 3 0 9 / M MMBFJ309 / MMBFJ310 M B F N-Channel RF Amplifier J 3 1 0 — N Description - C G h This device is designed for VHF/UHF amplifier, oscil- a n lator and mixer applications. As a common gate n amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz S e l can be realized. Sourced from process 92. Source & SOT-23 Note: Source & Drain R Drain are interchangeable. D are interchangeable F A m Ordering Information p l i f i e Part Number Top Mark Package Packing Method r MMBFJ309 6U SOT-23 3L Tape and Reel MMBFJ310 6T SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Gate Voltage 25 V DG V Gate-Source Voltage -25 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 to 150 °C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at T = 25°C unless otherwise noted. A Symbol Parameter Max. Unit Total Device Dissipation 350 mW P D Derate Above 25°C 2.8 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5

M M Electrical Characteristics B F Values are at TA = 25°C unless otherwise noted. J 3 0 Symbol Parameter Conditions Min. Typ. Max. Unit 9 Off Characteristics / M V Gate-Source Breakdown Voltage I = -1.0 μA, V = 0 -25 V M (BR)GSS G DS B VGS = -15 V, VDS = 0 -1.0 nA F IGSS Gate Reverse Current VGS = -15 V, VDS = 0, TA = 125°C -1.0 μA J3 1 MMBFJ309 -1.0 -4.0 0 VGS(off) Gate-Source Cut-Off Voltage VDS = 10 V, ID = 1.0 nA V — MMBFJ310 -2.0 -6.5 N On Characteristics - C Zero-Gate Voltage Drain MMBFJ309 12 30 h IDSS Current(4) VDS = 10 V, VGS = 0 MMBFJ310 24 60 mA an n V Gate-Source Forward Voltage V = 0, I = 1.0 mA 1.0 V e GS(f) DS G l Small Signal Characteristics R F Common-Source Input V = 10 V, I = 10 mA, MMBFJ309 0.7 A Re DS D mmhos (yis) Conductance f = 100 MHz MMBFJ310 0.5 m p Re Common-Source Output V = 10 V, I = 10 mA, f = 100 MHz 0.25 mmhos lif (yos) Conductance DS D ie r G Common-Gate Power Gain V = 10 V, I = 10 mA, f = 100 MHz 16 dB pg DS D Common-Source Forward Re V = 10 V, I = 10 mA, f = 100 MHz 12 mmhos (yfs) Transconductance DS D Common-Gate Input Re V = 10 V, I = 10 mA, f = 100 MHz 12 mmhos (yig) Conductance DS D Common-Source Forward V = 10 V, I = 10 mA, MMBFJ309 10000 20000 g DS D μmhos fs Transconductance f = 1.0 kHz MMBFJ310 8000 18000 Common-Source Output g V = 10 V, I = 10 mA, f = 1.0 kHz 150 μmhos oss Conductance DS D Common-Gate Forward V = 10 V, I = 10 mA, MMBFJ309 13000 g DS D μmhos fg Conductance f = 1.0 kHz MMBFJ310 12000 Common-Gate Output V = 10 V, I = 10 mA, MMBFJ309 100 g DS D μmhos og Conductance f = 1.0 kHz MMBFJ310 150 C Drain-Gate Capacitance V = 0, V = -10 V, f = 1.0 MHz 2.0 2.5 pF dg DS GS C Source-Gate Capacitance V = 0, V = -10 V, f = 1.0 MHz 4.1 5.0 pF sg DS GS NF Noise Figure V = 10 V, I = 10 mA, f = 450 MHz 3.0 dB DS D Equivalent Short-Circuit Input en Noise Voltage VDS = 10 V, ID = 10 mA, f = 100 Hz 6.0 nV/ Hz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 2

M M Typical Performance Characteristics B F J 3 0 9 / M M B F J 3 1 0 — N - C h a n n e l Figure 1. Transfer Characteristics Figure 2. Transfer Characteristics R F A m p l i f i e r Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Input Admittance Figure 6. Forward Transadmittance © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 3

M M Typical Performance Characteristics (Continued) B F J 3 0 9 / M M B F J 3 1 0 — N - C h a n n e l R F Figure 7. Common Drain-Source Figure 8. Output Conductance vs. Drain Current A m p l i f i e r Figure 9. Output Admittance Figure 10. Capacitance vs. Voltage Figure 11. Noise Voltage vs. Frequency Figure 12. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 4

M M Typical Performance Characteristics (Continued) B F J 3 0 9 / M M B F J 3 1 0 — N - C h a n n e l R F Figure 13. Parameter Interactions Figure 14. Transconductance vs. Drain Current A m p l i f i e r 700 W) m 600 N ( TIO 500 SIPA 400 SOT-23 S DI 300 R E W 200 O P - PD100 0 0 25 50 75 100 125 150 TEMPERATURE ( o C) Figure 15. Leakage Current vs. Voltage Figure 16. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 5

M M Physical Dimensions B F J 3 0 9 / M 2.92±0.20 0.95 M B F 3 J 1.40 3 1 0 — +0.20 1.30 2.20 -0.15 N - C h a n 1 2 n (0.29) 0.60 e 0.95 0.37 l R 0.20 A B 1.00 F 1.90 1.90 A m LAND PATTERN p RECOMMENDATION l i f i e 1.20 MAX SEE DETAIL A r (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 6

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AccuPower(cid:165) F-PFS(cid:165) OPTOPLANAR® AttitudeEngine™ FRFET® ®* Awinda® Global Power ResourceSM ® TinyBoost® AX-CAP®* GreenBridge(cid:165) PowerTrench® TinyBuck® BitSiC(cid:165) Green FPS(cid:165) PowerXS™ TinyCalc(cid:165) Build it Now(cid:165) Green FPS(cid:165) e-Series(cid:165) Programmable Active Droop(cid:165) TinyLogic® CorePLUS(cid:165) Gmax(cid:165) QFET® TINYOPTO(cid:165) CorePOWER(cid:165) GTO(cid:165) QS(cid:165) TinyPower(cid:165) CROSSVOLT(cid:165) IntelliMAX(cid:165) Quiet Series(cid:165) TinyPWM(cid:165) CTL(cid:165) ISOPLANAR(cid:165) RapidConfigure(cid:165) TinyWire(cid:165) Current Transfer Logic(cid:165) Making Small Speakers Sound Louder (cid:165) TranSiC(cid:165) DEUXPEED® and Better™ TriFault Detect(cid:165) Dual Cool™ MegaBuck(cid:165) Saving our world, 1mW/W/kW at a time™ TRUECURRENT®* EcoSPARK® MICROCOUPLER(cid:165) SignalWise(cid:165) μSerDes(cid:165) EfficientMax(cid:165) MicroFET(cid:165) SmartMax(cid:165) ESBC(cid:165) MicroPak(cid:165) SMART START(cid:165) ® MicroPak2(cid:165) SSoPlMut®ions for Your Success(cid:165) UHC® Fairchild® MillerDrive(cid:165) STEALTH(cid:165) Ultra FRFET(cid:165) FFFFFAAAaasiCCSrtcTvTThC®® iQlodur eSie(cid:165)et mSiecroiensd(cid:165)uctor® MMMMMmTToVWotixNt®iiS®oo®nnaGMveraird®x®(cid:165) SSSSSuuuuupppppeereeerrrrSFMSSOEOOOTTTTS(cid:165)®(cid:165)(cid:165)®-3--68 XUVVVXsCioSnseli™XutFnaa(cid:165)Esg l™MTe(cid:165)Palxu(cid:165)s(cid:165) FETBench(cid:165) SyncFET(cid:165) FPS(cid:165) OOpPtToOHLiTO(cid:165)GIC® Sync-Lock™ (cid:3037)(cid:10106)™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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