MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel www.onsemi.com Features • 2 SOURCE Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC−Q101 Qualified and GATE PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 SOT−23 (TO−236) Drain−Source Voltage VDS 25 Vdc 1 CASE 318 STYLE 10 Gate−Source Voltage VGS 25 Vdc 2 Gate Current IG 10 mAdc THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25°C 225 mW 6x M(cid:2) Derate above 25°C 1.8 mW/°C (cid:2) Thermal Resistance, Junction−to−Ambient R(cid:2)JA 556 °C/W 1 Junction and Storage Temperature TJ, Tstg −55 to +150 °C 6x =Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x = U for MMBFJ309L, SMMBFJ309L device. If any of these limits are exceeded, device functionality should not be x = T for MMBFJ310L, SMMBFJ310L assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR−5 = 1.0 x 0.75 x 0.062 in. (cid:2) = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBFJ309LT1G, SOT−23 3,000 / Tape & SMMBFJ309LT1G (Pb−Free) Reel MMBFJ310LT1G, SOT−23 3,000 / Tape & SMMBFJ310LT1G (Pb−Free) Reel SMMBFJ310LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 8 MMBFJ309LT1/D

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate−Source Breakdown Voltage V(BR)GSS −25 − − Vdc (IG = −1.0 (cid:3)Adc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc) IGSS − − −1.0 nAdc Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) − − −1.0 (cid:3)Adc Gate Source Cutoff Voltage MMBFJ309 VGS(off) −1.0 − −4.0 Vdc (VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ310, SMMBFJ310 −2.0 − −6.5 ON CHARACTERISTICS Zero−Gate−Voltage Drain Current MMBFJ309 IDSS 12 − 30 mAdc (VDS = 10 Vdc, VGS = 0) MMBFJ310, SMMBFJ310 24 − 60 Gate−Source Forward Voltage VGS(f) − − 1.0 Vdc (IG = 1.0 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance |Yfs| 8.0 − 18 mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance |yos| − − 250 (cid:3)mhos (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance Ciss − − 5.0 pF (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance Crss − − 2.5 pF (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent Short−Circuit Input Noise Voltage en − 10 − nV(cid:2)(cid:3)Hz (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L 70 70 A) m 60 60 T ( mA) 50 VDS = 10 V TA = -(cid:2)55°C 50 RREN RRENT ( 40 I+D(cid:2)2S5S°C +(cid:2)25°C 40 RAIN CU U D RAIN C 30 +150°C 30 ATION , DD 20 +(cid:2)25°C 20 TUR I A -(cid:2)55°C S 10 +150°C 10 , S S D I 0 -5.0 -4.0 -3.0 -2.0 -1.0 0 ID - VGS, GATE-SOURCE VOLTAGE (VOLTS) IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Characteristics versus Gate−Source Voltage s)100 k 1.0 k 10 120 o h m μD TRANSCONDUCTANCE ( 11.00 kk VGS(ofYf) f=s -(cid:2)2.3 V = Yfs 11000μTPUT ADMITTANCE ( mhos)CAPACITANCE (pF)74..00 RDSCgs 974628ON RESISTANCE (OHMS) AR Yos VGS(off) = -(cid:2)5.7 V = OU , S ORW , Yos Cgd 24RD F 1.0 , s Yf 100 1.0 0 0 0.01 0.10.20.30.5 1.0 2.03.05.0 10 2030 50 100 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 ID, DRAIN CURRENT (mA) VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 2. Common−Source Output Figure 3. On Resistance and Junction Admittance and Forward Transconductance Capacitance versus Gate−Source Voltage versus Drain Current www.onsemi.com 3

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L |S21|, |S11| |S12|, |S22| 30 3.0 0.85 0.45 0.060 1.00 24 VDS = 10 V 2.4 0.79 0.39 S22 0.048 0.98 | (mmhos)22 18 TIDA == 1205 °mCA Y11 1.8mhos) 0.73 0.33 VIDD =S 1=0 1 m0 AV S21 0.036 0.96 Y|, |Y21 12 Y21 1.2Y(m12 0.67 0.27 TA = 25°C 0.024 0.94 |Y|, |11 6.0 Y22 0.6 0.61 0.21 S11 0.012 0.92 Y12 S12 0 0.55 0.15 0.90 100 200 300 500 700 1000 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Common−Gate Y Parameter Figure 5. Common−Gate S Parameter Magnitude versus Frequency Magnitude versus Frequency (cid:2)21, (cid:2)11 (cid:2)12, (cid:2)22 (cid:2)11, (cid:2)12 (cid:2)21, (cid:2)22 180° 50° -(cid:2)20° 87° -(cid:2)20° 120° 0 (cid:2) (cid:2)22 -(cid:2)20° 11 (cid:2) 170° 40° -(cid:2)40° 86° -(cid:2)40° 100° 21 (cid:2) -(cid:2)20° (cid:2) 22 21 -(cid:2)60° 160° 30° -(cid:2)80° 85° -(cid:2)60° 80° -(cid:2)40° -(cid:2)100° 150° 20° (cid:2)12 -(cid:2)120° 84° -(cid:2)80° 60° (cid:2)21 -(cid:2)60° (cid:2) -(cid:2)140° (cid:2) 11 12 140° 10° VDS = 10 V -(cid:2)160° 83° -(cid:2)100° 40° VDS = 10 V (cid:2) -(cid:2)80° TIDA == 1205 °mCA -(cid:2)180° ITDA == 1205 °mCA 11 130° 0° -(cid:2)200° 82° -(cid:2)120° 20° -(cid:2)100° 100 200 300 500 700 1000 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Common−Gate Y Parameter Figure 7. S Parameter Phase−Angle Phase−Angle versus Frequency versus Frequency www.onsemi.com 4

MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 10: END VIEW PIN 1. DRAIN 2. SOURCE 3. GATE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MMBFJ309LT1/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MMBFJ309LT1G MMBFJ310LT1G MMBFJ310LT3G SMMBFJ310LT3G SMMBFJ310LT1G SMMBFJ309LT1G