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MMBFJ309产品简介:
ICGOO电子元器件商城为您提供MMBFJ309由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMBFJ309价格参考。Fairchild SemiconductorMMBFJ309封装/规格:晶体管 - FET,MOSFET - 射频, RF Mosfet N-Channel JFET 10V 10mA 450MHz 12dB SOT-23-3。您可以下载MMBFJ309参考资料、Datasheet数据手册功能说明书,资料中有MMBFJ309 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | IC SWITCH RF N-CH 25V 10MA SOT23射频JFET晶体管 NCh RF Transistor |
产品分类 | RF FET分离式半导体 |
Id-连续漏极电流 | 30 mA |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,晶体管射频,射频JFET晶体管,Fairchild Semiconductor MMBFJ309- |
数据手册 | |
产品型号 | MMBFJ309 |
PCN封装 | |
PCN设计/规格 | |
Pd-PowerDissipation | 350 mW |
Pd-功率耗散 | 350 mW |
Vds-Drain-SourceBreakdownVoltage | 25 V |
Vds-漏源极击穿电压 | 25 V |
Vgs-Gate-SourceBreakdownVoltage | - 25 V |
Vgs-栅源极击穿电压 | - 25 V |
Vgs=0时的漏-源电流 | 30 mA to 80 mA |
产品 | RF JFET |
产品培训模块 | http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=356 |
产品种类 | 射频JFET晶体管 |
供应商器件封装 | SOT-23-3(TO-236) |
其它名称 | MMBFJ309DKR |
功率-输出 | - |
功率耗散 | 350 mW |
包装 | Digi-Reel® |
单位重量 | 60 mg |
商标 | Fairchild Semiconductor |
噪声系数 | 3dB |
增益 | 12dB |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工作温度范围 | - 55 C to + 150 C |
工厂包装数量 | 3000 |
技术 | Silicon |
晶体管极性 | N-Channel |
晶体管类型 | N 通道 JFET |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 1 |
正向跨导-最小值 | 0.01 S to 0.02 S |
漏源电压VDS | 25 V |
电压-测试 | 10V |
电压-额定 | 25V |
电流-测试 | 10mA |
类型 | Silicon |
系列 | MMBFJ309 |
配置 | Single |
闸/源击穿电压 | - 25 V |
闸/源截止电压 | - 4 V |
零件号别名 | MMBFJ309_NL |
频率 | 450MHz |
额定电流 | 30mA |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
M M B January 2015 F J 3 0 9 / M MMBFJ309 / MMBFJ310 M B F N-Channel RF Amplifier J 3 1 0 — N Description - C G h This device is designed for VHF/UHF amplifier, oscil- a n lator and mixer applications. As a common gate n amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz S e l can be realized. Sourced from process 92. Source & SOT-23 Note: Source & Drain R Drain are interchangeable. D are interchangeable F A m Ordering Information p l i f i e Part Number Top Mark Package Packing Method r MMBFJ309 6U SOT-23 3L Tape and Reel MMBFJ310 6T SOT-23 3L Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Gate Voltage 25 V DG V Gate-Source Voltage -25 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 to 150 °C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics(3) Values are at T = 25°C unless otherwise noted. A Symbol Parameter Max. Unit Total Device Dissipation 350 mW P D Derate Above 25°C 2.8 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W Note: 3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5
M M Electrical Characteristics B F Values are at TA = 25°C unless otherwise noted. J 3 0 Symbol Parameter Conditions Min. Typ. Max. Unit 9 Off Characteristics / M V Gate-Source Breakdown Voltage I = -1.0 μA, V = 0 -25 V M (BR)GSS G DS B VGS = -15 V, VDS = 0 -1.0 nA F IGSS Gate Reverse Current VGS = -15 V, VDS = 0, TA = 125°C -1.0 μA J3 1 MMBFJ309 -1.0 -4.0 0 VGS(off) Gate-Source Cut-Off Voltage VDS = 10 V, ID = 1.0 nA V — MMBFJ310 -2.0 -6.5 N On Characteristics - C Zero-Gate Voltage Drain MMBFJ309 12 30 h IDSS Current(4) VDS = 10 V, VGS = 0 MMBFJ310 24 60 mA an n V Gate-Source Forward Voltage V = 0, I = 1.0 mA 1.0 V e GS(f) DS G l Small Signal Characteristics R F Common-Source Input V = 10 V, I = 10 mA, MMBFJ309 0.7 A Re DS D mmhos (yis) Conductance f = 100 MHz MMBFJ310 0.5 m p Re Common-Source Output V = 10 V, I = 10 mA, f = 100 MHz 0.25 mmhos lif (yos) Conductance DS D ie r G Common-Gate Power Gain V = 10 V, I = 10 mA, f = 100 MHz 16 dB pg DS D Common-Source Forward Re V = 10 V, I = 10 mA, f = 100 MHz 12 mmhos (yfs) Transconductance DS D Common-Gate Input Re V = 10 V, I = 10 mA, f = 100 MHz 12 mmhos (yig) Conductance DS D Common-Source Forward V = 10 V, I = 10 mA, MMBFJ309 10000 20000 g DS D μmhos fs Transconductance f = 1.0 kHz MMBFJ310 8000 18000 Common-Source Output g V = 10 V, I = 10 mA, f = 1.0 kHz 150 μmhos oss Conductance DS D Common-Gate Forward V = 10 V, I = 10 mA, MMBFJ309 13000 g DS D μmhos fg Conductance f = 1.0 kHz MMBFJ310 12000 Common-Gate Output V = 10 V, I = 10 mA, MMBFJ309 100 g DS D μmhos og Conductance f = 1.0 kHz MMBFJ310 150 C Drain-Gate Capacitance V = 0, V = -10 V, f = 1.0 MHz 2.0 2.5 pF dg DS GS C Source-Gate Capacitance V = 0, V = -10 V, f = 1.0 MHz 4.1 5.0 pF sg DS GS NF Noise Figure V = 10 V, I = 10 mA, f = 450 MHz 3.0 dB DS D Equivalent Short-Circuit Input en Noise Voltage VDS = 10 V, ID = 10 mA, f = 100 Hz 6.0 nV/ Hz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0% © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 2
M M Typical Performance Characteristics B F J 3 0 9 / M M B F J 3 1 0 — N - C h a n n e l Figure 1. Transfer Characteristics Figure 2. Transfer Characteristics R F A m p l i f i e r Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics Figure 5. Input Admittance Figure 6. Forward Transadmittance © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 3
M M Typical Performance Characteristics (Continued) B F J 3 0 9 / M M B F J 3 1 0 — N - C h a n n e l R F Figure 7. Common Drain-Source Figure 8. Output Conductance vs. Drain Current A m p l i f i e r Figure 9. Output Admittance Figure 10. Capacitance vs. Voltage Figure 11. Noise Voltage vs. Frequency Figure 12. Reverse Transadmittance © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 4
M M Typical Performance Characteristics (Continued) B F J 3 0 9 / M M B F J 3 1 0 — N - C h a n n e l R F Figure 13. Parameter Interactions Figure 14. Transconductance vs. Drain Current A m p l i f i e r 700 W) m 600 N ( TIO 500 SIPA 400 SOT-23 S DI 300 R E W 200 O P - PD100 0 0 25 50 75 100 125 150 TEMPERATURE ( o C) Figure 15. Leakage Current vs. Voltage Figure 16. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 5
M M Physical Dimensions B F J 3 0 9 / M 2.92±0.20 0.95 M B F 3 J 1.40 3 1 0 — +0.20 1.30 2.20 -0.15 N - C h a n 1 2 n (0.29) 0.60 e 0.95 0.37 l R 0.20 A B 1.00 F 1.90 1.90 A m LAND PATTERN p RECOMMENDATION l i f i e 1.20 MAX SEE DETAIL A r (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower(cid:165) F-PFS(cid:165) OPTOPLANAR® AttitudeEngine™ FRFET® ®* Awinda® Global Power ResourceSM ® TinyBoost® AX-CAP®* GreenBridge(cid:165) PowerTrench® TinyBuck® BitSiC(cid:165) Green FPS(cid:165) PowerXS™ TinyCalc(cid:165) Build it Now(cid:165) Green FPS(cid:165) e-Series(cid:165) Programmable Active Droop(cid:165) TinyLogic® CorePLUS(cid:165) Gmax(cid:165) QFET® TINYOPTO(cid:165) CorePOWER(cid:165) GTO(cid:165) QS(cid:165) TinyPower(cid:165) CROSSVOLT(cid:165) IntelliMAX(cid:165) Quiet Series(cid:165) TinyPWM(cid:165) CTL(cid:165) ISOPLANAR(cid:165) RapidConfigure(cid:165) TinyWire(cid:165) Current Transfer Logic(cid:165) Making Small Speakers Sound Louder (cid:165) TranSiC(cid:165) DEUXPEED® and Better™ TriFault Detect(cid:165) Dual Cool™ MegaBuck(cid:165) Saving our world, 1mW/W/kW at a time™ TRUECURRENT®* EcoSPARK® MICROCOUPLER(cid:165) SignalWise(cid:165) μSerDes(cid:165) EfficientMax(cid:165) MicroFET(cid:165) SmartMax(cid:165) ESBC(cid:165) MicroPak(cid:165) SMART START(cid:165) ® MicroPak2(cid:165) SSoPlMut®ions for Your Success(cid:165) UHC® Fairchild® MillerDrive(cid:165) STEALTH(cid:165) Ultra FRFET(cid:165) FFFFFAAAaasiCCSrtcTvTThC®® iQlodur eSie(cid:165)et mSiecroiensd(cid:165)uctor® MMMMMmTToVWotixNt®iiS®oo®nnaGMveraird®x®(cid:165) SSSSSuuuuupppppeereeerrrrSFMSSOEOOOTTTTS(cid:165)®(cid:165)(cid:165)®-3--68 XUVVVXsCioSnseli™XutFnaa(cid:165)Esg l™MTe(cid:165)Palxu(cid:165)s(cid:165) FETBench(cid:165) SyncFET(cid:165) FPS(cid:165) OOpPtToOHLiTO(cid:165)GIC® Sync-Lock™ (cid:3037)(cid:10106)™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I73 © Fairchild Semiconductor Corporation www.fairchildsemi.com
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1
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