MMBF2201N, NVF2201N Power MOSFET 300 mAmps, 20 Volts N−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low R assure DS(on) http://onsemi.com minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc−dc converters, power management in portable and 300 mAMPS, 20 VOLTS battery−powered products such as computers, printers, PCMCIA R = 1 (cid:2) DS(on) cards, cellular and cordless telephones. Features N−Channel • 3 Low R Provides Higher Efficiency and Extends Battery Life DS(on) • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable* • These Devices are Pb−Free and are RoHS Compliant 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) MARKING DIAGRAM Rating Symbol Value Unit AND PIN ASSIGNMENT Drain−to−Source Voltage VDSS 20 Vdc 3 3 Gate−to−Source Voltage − Continuous VGS ±20 Vdc Drain Drain Current mAdc 1 −−− PCCuoolnnstteiinnduu Doouurassi n@@ C TTuAArr e==n 27t 50(t°°pCC ≤ 10 (cid:2)s) IDIIDDM 327045000 2 SC−CS7AT0SY/SELO E4T 18−9323 N1 (cid:2)M(cid:2) Total Power Dissipation @ TA = 25°C PD 1 2 (Note 1) 150 mW Derate above 25°C 1.2 mW/°C Gate Source Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C N1 = Device Code Thermal Resistance, Junction−to−Ambient R(cid:3)JA 833 °C/W M = Date Code* (cid:2) = Pb−Free Package Maximum Lead Temperature for Soldering TL 260 °C (Note: Microdot may be in either location) Purposes, for 10 seconds *Date Code orientation may vary depending Stresses exceeding Maximum Ratings may damage the device. Maximum upon manufacturing location. Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the ORDERING INFORMATION Recommended Operating Conditions may affect device reliability. 1. Mounted on G10/FR4 glass epoxy board using minimum recommended Device Package Shipping† footprint. MMBF2201NT1G SOT−323 3000 / Tape & (Pb−Free) Reel NVF2201NT1G* SOT−323 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2013 − Rev. 7 MMBF2201NT1/D

MMBF2201N, NVF2201N ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS 20 − − Vdc (VGS = 0 Vdc, ID = 10 (cid:2)A) Zero Gate Voltage Drain Current IDSS (cid:2)Adc (VDS = 16 Vdc, VGS = 0 Vdc) − − 1.0 (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS − − ±100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 1.0 1.7 2.4 Vdc (VDS = VGS, ID = 250 (cid:2)Adc) Static Drain−to−Source On−Resistance rDS(on) (cid:4) (VGS = 10 Vdc, ID = 300 mAdc) − 0.75 1.0 (VGS = 4.5 Vdc, ID = 100 mAdc) − 1.0 1.4 Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gFS − 450 − mMhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 V) Ciss − 45 − pF Output Capacitance (VDS = 5.0 V) Coss − 25 − Transfer Capacitance (VDG = 5.0 V) Crss − 5.0 − SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(on) − 2.5 − ns Rise Time (VDD = 15 Vdc, ID = 300 mAdc, tr − 2.5 − Turn−Off Delay Time RL = 50 (cid:4)) td(off) − 15 − Fall Time tf − 0.8 − Gate Charge (See Figure 5) QT − 1400 − pC SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current IS − − 0.3 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 3) VSD − 0.85 − V 2. Pulse Test: Pulse Width ≤300 (cid:2)s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. TYPICAL CHARACTERISTICS 1.0 1.6 0.9 1.4 S) 0.8 VGS = 4 V S) P M 1.2 URRENT (AM 000...567 VGS = 3.5 V STANCE (OH 01..80 IVDG =S 1=0 04 .m5 AV VGS = 10 V DRAIN C 00..34 VGS = 3 V ON RESI 0.6 ID = 300 mA , D , S0.4 I 0.2 D R 0.1 VGS = 2.5 V 0.2 0 0 0 1 2 3 4 5 6 7 8 9 10 -(cid:2)60 -(cid:2)40 -(cid:2)20 0 20 40 60 80 100 120 140 160 VDS, DRAIN(cid:2)-(cid:2)SOURCE VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 1. Typical Drain Characteristics Figure 2. On Resistance versus Temperature http://onsemi.com 2

MMBF2201N, NVF2201N TYPICAL CHARACTERISTICS 10 1.2 , ON RESISTANCE (OHMS)RDS 2468 ID = 300 mA , ON RESISTANCE (OHMS)RDS00001.....24680 VVGGSS == 140.5 V V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 GATE(cid:2)-(cid:2)SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On Resistance versus Gate−Source Figure 4. On Resistance versus Drain Current Voltage 1.0 45 40 VGS = 0 V F = 1 mHz PS) 35 NT (AM 0.1 E (pF) 30 E C R N 25 CUR CITA 20 RCE 0.01 CAPA 15 Ciss , SOUS C, 10 Coss I 5 Crss 0.001 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 6 8 10 12 14 16 18 20 VSD, SOURCE(cid:2)-(cid:2)DRAIN FORWARD VOLTAGE (VOLTS) VDS, DRAIN(cid:2)-(cid:2)SOURCE VOLTAGE (VOLTS) Figure 5. Source−Drain Forward Voltage Figure 6. Capacitance Variation 1.0 0.9 S) 0.8 25 P -(cid:2)55 AM 0.7 T ( 150 N 0.6 E R R 0.5 U C N 0.4 AI DR 0.3 , D I 0.2 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE(cid:2)-(cid:2)SOURCE VOLTAGE (VOLTS) Figure 7. Transfer Characteristics http://onsemi.com 3

MMBF2201N, NVF2201N PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. e1 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.032 0.035 0.040 HE E A1 0.00 0.05 0.10 0.000 0.002 0.004 1 2 A2 0.70 REF 0.028 REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 b E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e e1 0.65 BSC 0.026 BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 STYLE 8: A A2 c PIN 1.GATE 2.SOURCE 3.DRAIN 0.05 (0.002) L A1 SOLDERING FOOTPRINT* 0.65 0.65 0.025 0.025 1.9 0.075 0.9 0.035 0.7 0.028 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MMBF2201NT1/D 4

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