MMBD452LT1G Dual Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an www.onsemi.com inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. 30 VOLTS Features DUAL HOT−CARRIER • Extremely Low Minority Carrier Lifetime DETECTOR AND SWITCHING • Very Low Capacitance DIODES • Low Reverse Leakage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 2 Compliant ANODE CATHODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) 3 CATHODE/ANODE Rating Symbol Value Unit Reverse Voltage VR 30 V 3 Forward Power Dissipation PF SOT−23 (TO−236) @De rTaAt e= a2b5o°vCe 25°C 212.85 mmWW/°C 1 CSATYSLEE 3 1118 2 Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5N M(cid:2) (cid:2) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 1 (EACH DIODE) Characteristic Symbol Min Typ Max Unit 5N = Device Code M = Date Code* Reverse Breakdown Voltage V(BR)R 30 − − V (cid:2) = Pb−Free Package (IR = 10 (cid:2)A) (Note: Microdot may be in either location) Total Capacitance CT − 0.9 1.5 pF *Date Code orientation and/or overbar may vary (VR = 15 V, f = 1.0 MHz) Figure 1 depending upon manufacturing location. Reverse Leakage IR − 13 200 nAdc (VR = 25 V) Figure 3 ORDERING INFORMATION Forward Voltage VF − 0.38 0.45 Vdc Device Package Shipping† (IF = 1.0 mAdc) Figure 4 MMBD452LT1G SOT−23 3,000 / Tape & Reel Forward Voltage VF − 0.52 0.6 Vdc (Pb−Free) (IF = 10 mAdc) Figure 4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC,1996 1 Publication Order Number: October, 2016 − Rev. 5 MMBD452LT1/D

MMBD452LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 f = 1.0 MHz s) 2.4 p F) E (400 p M CE ( 2.0 ETI KRAKAUER METHOD AN LIF CIT 1.6 ER 300 APA RRI AL C 1.2 Y CA200 T T , TOT 0.8 NORI C MI100 0.4 , (cid:3) 0 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 100 A) 1.0 TA = 100°C mA) (cid:2)E ( NT ( 10 G E AKA 75°C URR TA = 85°C TA = -(cid:2)40°C E 0.1 C VERSE L RWARD 1.0 RE 0.01 25°C FO TA = 25°C , R , F I I 0.001 0.1 0 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD STORAGE CONDUCTION CONDUCTION BALLAST SAMPLING SINUSOIDAL NETWORK PADS OSCILLOSCOPE GENERATOR (PADS) (50 (cid:4) INPUT) DUT Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 2

MMBD452LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPIRMOETNRSUIOSNIOSN DS ,A ONRD GEA DTOE NBUORT RINSC.LUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0(cid:3) −−− 10(cid:3) 0(cid:3) −−− 10(cid:3) A1 c SIDE VIEW SEE VIEW C STYLE 11: END VIEW PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your loca Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ http://onsemi.com MMBD452LT1/D 3

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