MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier Feeatures:: • 30 dB GGain • 33 dBmm P- 1dB • OIP3 455 dBm • 26.0 dBBm Linear Poout @ 2.5% EEVM (802.11 664QAM) • Fully MMatched Input and Outputt for Easy Caascade • Internal Bias Tee • Surfacee Mount Package • MTTF >> 100 years @@ 85ºC ambient temperature Deescriptioon: Thee MMA-445933H-02 is a ppower amplifieer with the Staate-of-the-Artt linear powerr-added-efficieency betweenn 4.4 GHz andd 5.9 GHz freequency bandd.Based on advanced robuust HFET devvice technologgy, the lineariity of this powwer ammplifier is 26 dBm linear powwer at 2.0% EEVM and achieves an ACPPR better than -38 dBc. The modulation test patttern is 802.16x 64QAM. TThis linear powwer amplifier also has highh gain. Ideal aapplications innclude the driver and thee output poweer stage of WiMax and WLAAN infrastrucctures and acccess points. Itt also can be used for PTPP (Point- To--Point) radio applications ffor this band. Tyypical RRF Performance : Vdd1= 7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V, Idq1=410mA Idq2=622mA, Ta==25 ºC, Z0=550 ohm Unitss TTypical Dataa Paarameter Freequency RRange MHz 4400-5900 Gaain (Typ / MMin) dB 29 / 33 Gaain Flatness (Typ / MMax) +/-dBB 2.5 / 4.5 Input Returnn Loss dB 10 Ouutput Returrn Loss dB 7 Ouutput P1dBB dBm 33 OIIP3 dBm 45 Poout @ 2.5%% EVM dBm 26.0 Opperating Cuurrent Range mA 1050 Thhermal Ressistance (DDriver Stagee) °C /WW 20 Thhermal Ressistance (OOutput Stagge) °C /WW 16 MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 1 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier Tyypical RRF Performance: Vdd1=7.5VV,Vdd2=7.5VV,,Vgg1=-0.8, Vgg2=-0.8V, Idq1=410mAA , Idqq2=620mA, ZZ0=50 ohm, TTa=25 ºC MMA445933HH-02 Gain Reesponse MMA44459H02 Return Loss Reesponse 37 0 36 -5 35 B) -110 d b) 34 ss ( -115 d o ain ( 33 rn L -220 G 32 u et -225 R 31 -330 30 -335 29 4.0 4.2 4.44 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 4.0 4.2 4.4 4.6 4.88 5.0 5.2 5.4 5.6 5.8 66.0 Frequenncy (GHz) Freqquency (GHz) P1dB vs Freqquency MMA445933H02 VVdd=7.5, Vgg=-08, Idd1=4416mA, Idd2=619mA OIP3 and Idd vvs Freqency Vdd1=Vdd2=7.5V, Vgg1=Vgg2=-0.8 35.0 550 1100 34.5 449 448 1060 34.0 447 33.5 P1dB (dBm)3323..50 OIP3 (dBm)444444456 9180020Idd (mA) 443 32.0 442 940 31.5 441 31.0 440 900 4.40 4.65 4.90 Freeque5n.c1y5 (GHz) 5.40 5.65 5.90 4.404.454.504.554.604.654.704.754.804804.854.904.955.005.055.105.155.205.255255.305.355.405.455.505.555.605.655.705705.755.805.855.90 Frequency (GHHz) MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 2 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier EEVM vs Pout over Frequenccy 9 EVMM4p4 8 EVMM5p0 7 EVMM5p5 EVMM5p9 6 ) % 5 ( M 4 V E 3 2 1 0 8 9 10 1112 113 14 15 166 17 18 199 20 21 22223 24 25 266 27 28 Bursst Power (ddBm) MMaximumm Ratinggs: (Ta= 255 °C)* SYYMBOL PPARAMETERRS UNITS AABSOLUTE MMAXIMUM Vdd1 Drain-Source Voltage DDriver Stage V 10 Vdd2 Drain-Sourrce Voltage OOutput Stage V 10 Vgg1 Gate-Source Voltage DDriver Stage V -5 Vgg2 Gate-Sourrce Voltage OOutput Stage V -5 Idq1 Drain Current Driveer Stage mA 5000 Idq2 Drain CCurrent Outpuut Stage mA 7500 Igg1 and Ig2 Gate Currennt mA 10 Ip Pinch-Off Currrent mA 10 Pdiss DC Power Dissippation W 9.00 Pin max RRF Input Powwer dBm +100 Toper Operating Temperature ºC -40 to +85 Tch Chaannel Temperrature ºC 1755 Tstg Storage Temperature ºC -55 to 150 *Opperation of this deevice above any one of these parameters may caause permanent damage. MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 3 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier Tyypical SScatterinng Parammeters : Vdd1= 7.5V,Vdd2= 7.5V, Vgg1= -0.8V, Vgg2= -0.8V, Idq1=410mA, Idq2=620mA, Z0=50 ohm, Ta=25º S-parameeters Vddd1=Vdd2 ==7.5, Vgg11=Vgg2=-0.8, Idd1==416mA, Iddd2=620mmA freq magS11 AngS11 mmagS21 AAngS21 maagS12 AnggS12 maggS22 AngSS22 4.000 G... 0.645 32.285 43.519 -99.628 0.001 997.671 00.072 222.256 4.100 G... 0.583 19.241 50.770 -128.986 0.001 1003.298 00.029 588.433 4.200 G... 0.507 3.416 56.887 -160.542 0.001 1004.699 00.039 1366.794 4.300 G... 0.405 -13.491 58.229 171.005 0.001 999.811 00.085 1555.711 4.400 G... 0.303 -28.862 60.835 137.356 0.001 996.209 00.141 1477.883 4.500 G... 0.230 -43.280 58.592 113.084 0.001 999.810 00.175 141.579 4.600 G... 0.174 -60.629 56.340 89.105 0.001 997.310 00.221 1377.483 4.700 G... 0.126 -77.940 57.163 60.090 0.001 886.109 00.265 1288.530 4.800 G... 0.109 -97.370 54.402 43.453 0.001 994.205 00.291 1222.688 4.900 G... 0.127 -120.196 51.026 18.963 0.001 1228.273 00.326 1199.347 5.000 G... 0.154 -141.350 61.098 -5.354 0.001 1117.399 00.386 111.612 5.100 G... 0.189 -153.388 49.493 -24.139 2.8849E-4 1558.159 00.423 101.495 5.200 G... 0.253 -162.215 57.434 -52.760 0.001 -1771.236 00.443 91.180 5.300 G... 0.316 -175.950 59.113 -79.554 0.001 -1778.476 00.463 777.581 5.400 G... 0.357 169.576 50.821 -99.637 0.001 1663.283 00.437 61.712 5.500 G... 0.399 158.603 50.854 -137.348 0.002 1776.446 00.366 488.775 5.600 G... 0.435 147.247 45.402 -151.993 0.002 1669.971 00.294 377.350 5.700 G... 0.451 137.700 38.623 177.226 0.002 1668.668 00.224 299.044 5.800 G... 0.458 131.897 35.013 157.753 0.002 1669.718 00.152 255.486 5.900 G... 0.462 128.232 31.307 137.326 0.002 1662.603 00.084 299.234 6.000 G... 0.465 123.778 28.815 115.352 0.003 1770.218 00.051 722.184 MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 4 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier MMechaniccal Information: .4330 .15 MAXX. .050 TTYP. 2 PLCS. GAP. .0033 TYP. .250 INNPUT SIDE DOOT .050 TYYP. 8 PLCS. .2270 .024 TYPP. 10 PLCS. OOUTPUT PAD INPUT PAAD .040 TYP. 22 PLCS. GROUND PAAD Packkage Outlinne Pin Desiignation (Toop View) Piin Number Signal NName Pinn Number Signal Namme 1 DDot Top Leftt Vgg1 10 Vgg2 2 GNDD 9 GND 3 RF IIn 8 RF Outt 4 GNDD 7 GND 5 Vddd1 6 Vdd2 AAll dimensiions are in inches FFigure 1 Fuunctional DDiagram MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 5 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier Appplication NNote The eevaluation boaard, shown inn Figure 1, is ffabricated witth Rogers’s 4003 matterial, 20 mil tthick, 2 oz coopper weight aand includdes four DC innput connections and two RF lines. Thee MMA--445933H-022 shown in thee center of booard is a 2 waatt high gain aand high lineaarity amplifier. The MMA-4445933H-02 iis a 3 stage amplifier asssembly die atttach to the modified ‘02’ paackage whichh includes fouur bias entriess and two RF connections. The bias tees are built--in to the packkage. Small vvalue bypassing capaccitors are incluuded with asssembly. Propper bypassingg is still requirred on the DCC lines. The aamplifier operrates over a Figurre 1 Evaluationn board tempeerature rangee of approximaately 85°C. The PPCB requires via holes withh a diameter of 20 mils plaaced uniforrmly over the center pad foor thermal reliief and RF groound as shownn in Figure 2. The via holees can be bacck filled with conduuctive epoxy ffor best thermmal performannce. The choice of capaccitor bypassinng near the ammplifier should have a short circuit resonnance at the frrequency of ooperation. A ssmall capacittor 3.9pf 0603 from AVX haas a series ressonance at 5..5 GHz and wwill make a goood choice for tthe first bypasss capacitor. Figgure 2 Hole Laayout Followed up with larger valuee capacitors, 100pf or 10000pf and 2.2uFF can be usedd to maintain voltage stability under peaak current conditions. Thee DC ground vvia holes should be laid ouut to minimizeed inductive reeturns associated with groound loops. UUse of stitch gground via hooles can help control the reeturn current aand also mainntain ground conntinuity betweeen the top annd bottom groound layers. TTwo mountingg holes are uused near the PA assemblyy to seccure the boarrd to the chassis; this also minimizes groound current loops and immproves thermmal conductivity in the abssence of sweat soldering the board to thhe chassis. TThe internal bbias tees insidde the PA aree quarter-wavee stubs at tthe gate and drain inputs. A 56 ohm reesistor is inseerted in seriess to the gate inncreasing thee effective imppedance seeen from the VVgs power suppply and reduucing the risk of video oscilllations. DC bblocks are inccluded with asssembly; twoo zero ohm reesistors are ussed at the inpput and output 50 ohms traaces. The MMMA-445933H-02 has a noisse figure MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 6 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier lesss than 9.0 dBB. A plot of nooise figure veersus frequenccy at Idq is shhown in Figurre 3. The amplifier behavees like a claass ‘A’ amplifieer. At small ssignal levels the amplifier ooperates at Iddq. A plot of P1dB versus frequency shhown in Figgure 4 is plotteed from 4.4 too 5.9 GHz. Thhe drain curreent Idd1 and Idd2 increasees over a rangge of 1050 mAA to 1100 mAA from Idq = 11020 mA. This bias condition for this ammplifier is classs A. The gain versus temmperature hass a neggative slope oof -0.07 dB/℃℃. Other classs operations ccan be set byy adjusting thee gate controll voltage(s). SSuch opeerations as cllass B is doabble by backingg off the PA sstage controlleed by Vgg2 ccontrol voltagee. The maximmum inpput drive level is 17 dBm. Thee two tone linnearity shown in Figure 4 iss swept acrosss a power range from 15 tto 25 dBm peer tone at the output of thee amplifier from 4.4 to 4.9 GGHz. At 22 dBm per tone the IMD3 is 550 dBc and OOIP3 is 47 dBmm. The Burstt power shoown in Figuree 5 is measureed across thee frequency raange from 4.44 to 4.9 GHz aat error vector magnitudess equal to 2%% and 2.5%. TThe modulatioon is 802.16xx and each fraame cycle hass a 10 msec dduration and runs continuoously. Equalization is eenabled whenn measuring EEVM performaance. The MMMA amplifier bias conditioon is Vdd1=Vdd2=7.55V and the gaate voltage is Vgg1=Vgg2==-0.8V for an Idq=1020 mAA. Thee gain stabilitty over tempeerature is showwn in Figure 66 and 7. Thee temperaturee range was taaken at 10 C to 85 C degg and varies 33 dB at a fix ffrequency. Thee EVM versuss burst powerr, shown in Fiigures 8 and 9 is better thaan 25.5 dBm for an EVM ==2% over temmperature andd is plotted att two spot freqquencies poinnts 4.4 GHz aand 4.9 GHz ffrom 10C to 885C degrees. P11dB vs Temperrature and Freqquency NF vs Frequency 35.0 34.5 9 CC re (dB) 8.5 CB_70B_25CN10_N10 3334..50 se Figu 7.58 P1dP1dP1dBP1dB 3323..50 oi N 7 32.0 4444 444555555 55555 4.4 4.5 4.66 4.7 4.8 4.99 .4.5.66 .7.8.9.0.11.2.3.4 .5.6.7.8.9 Frequeency (GHz) Freqquency (GHz) FFigure 2 Noise Figurre Figurre 3 P1dB aand Ids MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 7 of 8, Updated July 2017

MMA-4445933H-02 4..4 – 5.9 GHzz 2W High EEfficiency Linnear Power AAmplifier Twwo Tone IMDD3 vs Tone Power BBurst Power vs Frequency 6750 Bm) 272.75 IMD3 (dBc) 45565050 urst Power (d 225622..5655 40 B 24.5 15 16 17 18 199 20 21 222 23 24 225 4.4 4.5 4.6 4.7 4.8 4.9 Poweer Per Tone (dBm) Frequuency (GHz) IMD3_4.4 GHz IMMD3_4.7GHz IMMD3_4.9GHz BP_2% BP_2.5% Figure 4 Two Tonee Figure 5 Buurst Power Gain versus Frequency and Temmperature CC Gain-Temperature Coefficient (70C to 25C and 25C to -10C) vs Frequee 38 2525 00.04 __ 37 elowbove 0000..0023 Gain_70CGain_50CGain_25CGain_N10C3356 re_Coeff_Bre_Coeff_A-000000...000011 uu 34 atat-00.02 rr pepe-00.03 33 mm 4.0 44.2 4.4 4.6 44.8 5.0 5.2 55.4 5.6 5.8 66.0 ee-00.04 TT 4.0 4.2 4.44 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.00 freq, GHz freqq, GHz Figgure 6 Gain vs Temperaature Figure 7 GGain-Tempeerature Coeefficient EVM annd Ids vs Burstt Power over TTemperature EVM and Idss vs Burst Poweer over Temperrature 6 0.925 6 0.925 5 0.9 5 0.9 4 0.875 4 0.875 EVM(%)EVM (%) 3 0.85 Ids (A) EVM (%) 3 0.85 Ids (A) 2 0.825 2 0.825 1 0.8 1 0.8 0 0.775 10 12 14 16 18 20 22 24 26 28 0 0.775 10 12 14 16 18 20 22 24 26 28 Burst Poower (dBm) Burst Power (dBm) Figgure 8 EVM vs Burst Power and TTemperaturee Figuure 9 EVM vss Burst Powwer and Temmperature MicroWWave Technologgy, Inc. an IXYS Company, 42688 Solar Way, Freemont, CA 945388 510-6511-6700 FAX 5100-952-4000 WEBB www.mwtinc.coom Dataa contained herein is subject to chhange without nootice. All rights rreserved © Pleasee visit MwT website www.mwtinc.com for informattion on other MwwT MMIC productts. Page 8 of 8, Updated July 2017