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ICGOO电子元器件商城为您提供MM74HCT540MTC由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MM74HCT540MTC价格参考。Fairchild SemiconductorMM74HCT540MTC封装/规格:逻辑 - 缓冲器,驱动器,接收器,收发器, Buffer, Inverting 1 Element 8 Bit per Element 3-State Output 20-TSSOP。您可以下载MM74HCT540MTC参考资料、Datasheet数据手册功能说明书,资料中有MM74HCT540MTC 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC INVERTER 8-INPUT 20TSSOP缓冲器和线路驱动器 Inv Oct 3-STATE Buf |
产品分类 | |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 逻辑集成电路,缓冲器和线路驱动器,Fairchild Semiconductor MM74HCT540MTC74HCT |
数据手册 | |
产品型号 | MM74HCT540MTC |
产品种类 | 缓冲器和线路驱动器 |
传播延迟时间 | 30 ns at 5 V |
低电平输出电流 | 7.2 mA |
供应商器件封装 | 20-TSSOP |
元件数 | 1 |
包装 | 管件 |
单位重量 | 191 mg |
商标 | Fairchild Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Tube |
封装/外壳 | 20-TSSOP(0.173",4.40mm 宽) |
封装/箱体 | TSSOP-20 |
工作温度 | -40°C ~ 85°C |
工厂包装数量 | 73 |
最大功率耗散 | 500 mW |
最大工作温度 | + 85 C |
最小工作温度 | - 40 C |
极性 | Inverting |
标准包装 | 73 |
每元件位数 | 8 |
每芯片的通道数量 | 8 |
电压-电源 | 4.5 V ~ 5.5 V |
电流-输出高,低 | 7.2mA,7.2mA |
电源电压-最大 | 5.5 V |
电源电压-最小 | 4.5 V |
系列 | MM74HCT540 |
输入线路数量 | 8 |
输出类型 | 3-State |
输出线路数量 | 8 |
逻辑类型 | 缓冲器/线路驱动器, 反相 |
逻辑系列 | HCT |
高电平输出电流 | - 7.2 mA |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
M M 7 4 June 2007 H C MM74HCT540, Inverting Octal 3-STATE Buffer T tm 5 MM74HCT541, Octal 3-STATE Buffer 4 0 , I n v Features General Description e r t ■ TTL input compatible The MM74HCT540 and MM74HCT541 3-STATE buffers in ■ Typical propagation delay: 12ns utilize advanced silicon-gate CMOS technology and are g general purpose high speed inverting and non-inverting O ■ 3-STATE outputs for connection to system buses buffers. They possess high drive current outputs which c ■ Low quiescent current: 80µA ta enable high speed operation even when driving large l ■ Output current: 6mA (Min.) bus capacitances. These circuits achieve speeds com- 3 - parable to low power Schottky devices, while retaining S T the low power consumption of CMOS. Both devices are A TTL input compatible and have a fanout of 15 LS-TTL T E equivalent inputs. B MM74HCT devices are intended to interface between u f TTL and NMOS components and standard CMOS f e devices. These parts are also plug-in replacements for r LS-TTL devices and can be used to reduce power con- M sumption in existing designs. M 7 The MM74HCT540 is an inverting buffer and the 4 MM74HCT541 is a non-inverting buffer. The 3-STATE H C control gate operates as a two-input NOR such that if T either G1 or G2 are HIGH, all eight outputs are in the 5 4 high-impedance state. 1 , In order to enhance PC board layout, the MM74HCT540 O and MM74HCT541 offers a pinout having inputs and c t outputs on opposite sides of the package. All inputs are a l protected from damage due to static discharge by diodes 3 - to V and ground. S CC T A T E Ordering Information B u Package f f e Order Number Number Package Description r MM74HCT540WM M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300" Wide MM74HCT540SJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide MM74HCT540MTC MTC20 20-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide MM74HCT541WM M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300" Wide MM74HCT541SJ M20D 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide MM74HCT541MTC MTC20 20-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide MM74HCT541N N20A 20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering number. ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com MM74HCT540, MM74HCT541 Rev. 1.3
M Connection Diagrams M 7 Pin Assignments for DIP, SOIC, SOP and TSSOP 4 H C T 5 4 0 , I n v e r t i n g O c t a l 3 - S T A T E B u Top View, MM74HCT540 f f e r M M 7 4 H C T 5 4 1 , O c t a l 3 - S T A T E B u f f e Top View, MM74HCT541 r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 2
M Absolute Maximum Ratings(1) M 7 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 4 H operable above the recommended operating conditions and stressing the parts to these levels is not recommended. C In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. T The absolute maximum ratings are stress ratings only. 5 4 0 Symbol Parameter Rating , I n VCC Supply Voltage –0.5 to +7.0V v e V DC Input Voltage –1.5 to V +1.5V r IN CC t i n V DC Output Voltage –0.5 to V +0.5V OUT CC g I , I Clamp Diode Current ±20mA O IK OK c I DC Output Current, per pin ±35mA t OUT a l ICC DC VCC or GND Current, per pin ±70mA 3 - T Storage Temperature Range –65°C to +150°C S STG T P Power Dissipation A D T Note 2 600mW E B S.O. Package only 500mW u TL Lead Temperature (Soldering 10 seconds) 260°C ffe r Note: M 1. Unless otherwise specified all voltages are referenced to ground. M 2. Power Dissipation temperature derating — plastic “N” package: –12mW/°C from 65°C to 85°C. 7 4 H C Recommended Operating Conditions T 5 The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended 4 1 operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not , recommend exceeding them or designing to absolute maximum ratings. O c t Symbol Parameter Min. Max. Units a l V Supply Voltage 4.5 5.5 V 3 CC - S VIN, VOUT DC Input or Output Voltage 0 VCC V T A T Operating Temperature Range –40 +85 °C T A E t, t Input Rise and Fall Times 500 ns r f B u f f e r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 3
M DC Electrical Characteristics M V = 5V ± 10% (unless otherwise specified) 7 CC 4 H T = –40 T = –55 C A A T = 25°C to 85°C to 125°C T A 5 4 Symbol Parameter Conditions Typ. Guaranteed Limits Units 0 , VIH Minimum HIGH 2.0 2.0 2.0 V In Level Input Voltage v e r VIL Maximum LOW 0.8 0.8 0.8 V ti Level Input Voltage n g VOH Minimum HIGH VIN = VIH or VIL: O LVeovltealg Oeutput |IOUT| = 20µA VCC VCC – 0.1 VCC – 0.1 VCC – 0.1 V cta |IOUT| = 6.0mA, VCC = 4.5V 4.2 3.98 3.84 3.7 l 3 |I | = 7.2mA, V = 5.5V 5.2 4.98 4.84 4.7 -S OUT CC T V Maximum LOW V = V or V : A OL IN IH IL T Level Voltage |I | = 20µA 0 0.1 0.1 0.1 V E OUT |I | = 6.0mA, V = 4.5V 0.2 0.26 0.33 0.4 B OUT CC u |I | = 7.2mA, V = 5.5V 0.2 0.26 0.33 0.4 ff OUT CC e I Maximum Input V = V or GND ±0.1 ±1.0 ±1.0 µA r IN IN CC Current M M I Maximum 3-STATE V = V or GND, G = V ±0.5 ±5.0 ±10 µA OZ OUT CC IH 7 Output Leakage 4 H Current C I Maximum V = V or GND, I = 0µA 8.0 80 160 µA T CC IN CC OUT 5 Quiescent Supply V = 2.4V or 0.5V(3) 0.6 1.0 1.3 1.5 mA 4 IN 1 Current , O Note: c t 3. Measured per input. All other inputs at V or GND. a CC l 3 - S T A T E B u f f e r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 4
M AC Electrical Characteristics M MM74HCT540: V = 5.0V, t = t = 6ns, T = 25°C, (unless otherwise specified). 7 CC r f A 4 H Guaranteed C Symbol Parameter Conditions Typ. Limits Units T 5 tPHL, tPLH Maximum Output Propagation Delay CL = 45pF 12 18 ns 40 t , t Maximum Output Enable Time C = 45pF, R = 1kΩ 14 28 ns , I PZL PZH L L n tPLZ, tPHZ Maximum Output Disable Time CL = 5pF, RL = 1kΩ 13 25 ns ve r t i n g AC Electrical Characteristics O MM74HCT540: VCC = 5.0V ±10%, tr = tf = 6ns (unless otherwise specified). ct a TA = –40 TA = –55 l 3 T = 25°C to 85°C to 125°C -S A T Symbol Parameter Conditions Typ. Guaranteed Limits Units A T t , t Maximum Output C = 50pF 12 20 25 30 ns E PHL PLH L Propagation Delay CL = 150pF 22 30 38 45 Bu t , t Maximum Output Enable R = 1kΩ C = 50pF 15 30 38 45 ns ff PZH PZL L L e Time CL = 150pF 20 40 50 60 r M t , t Maximum Output Disable R = 1kΩ, C = 50pF 15 30 38 45 ns PHZ PLZ L L M Time 7 tTHL, tTLH Maximum Output Rise CL = 50pF 6 12 15 18 ns 4H and Fall Time C T C Maximum Input 5 10 10 10 pF 5 IN 4 Capacitance 1 C Maximum Output 15 20 20 20 pF , O OUT Capacitance c t a CPD Power Dissipation (per output) G = VCC 12 pF l Capacitance(4) G = GND 50 3- S T Note: A 4. CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC, and the no load dynamic TE current consumption, I = C V f + I S PD CC CC. B u f f e r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 5
M AC Electrical Characteristics M MM74HCT541: V = 5.0V, t = t = 6ns, T = 25°C, (unless otherwise specified). 7 CC r f A 4 H Guaranteed C Symbol Parameter Conditions Typ. Limits Units T 5 tPHL, tPLH Maximum Output Propagation Delay CL = 45pF 13 20 ns 40 t , t Maximum Output Enable Time C = 45pF, R = 1kΩ 17 28 ns , I PZL PZH L L n tPLZ, tPHZ Maximum Output Disable Time CL = 5pF, RL = 1kΩ 15 25 ns ve r t i n g AC Electrical Characteristics O MM74HCT541: VCC = 5.0V ± 10%, tr = tf = 6ns (unless otherwise specified). ct a TA = –40 TA = –55 l 3 T = 25°C to 85°C to 125°C -S A T Symbol Parameter Conditions Typ. Guaranteed Limits Units A T t , t Maximum Output C = 50pF 14 23 29 34 ns E PHL PLH L Propagation Delay CL = 150pF 17 33 42 49 Bu t , t Maximum Output R = 1kΩ C = 50pF 17 30 38 45 ns ff PZH PZL L L e Enable Time CL = 150pF 22 40 50 60 r M t , t Maximum Output R = 1kΩ, C = 50pF 17 30 38 45 ns PHZ PLZ L L M Disable Time 7 tTHL, tTLH Maximum Output Rise CL = 50pF 6 12 15 18 ns 4H and Fall Time C T C Maximum Input 5 10 10 10 pF 5 IN 4 Capacitance 1 C Maximum Output 15 20 20 20 pF , O OUT Capacitance c t a CPD Power Dissipation (per output) G = VCC 12 pF l Capacitance(5) G = GND 45 3- S T Note: A 5. CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC, and the no load dynamic TE current consumption, I = C V f + I S PD CC CC. B u f f e r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 6
M Physical Dimensions M 7 Dimensions are in inches (millimeters) unless otherwise noted. 4 H C T 5 4 0 , I n v e r t i n g O c t a l 3 - S T A T E B u f f e r M M 7 4 H C T 5 4 1 , O c Figure 1. 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300" Wide t a Package Number M20B l 3 - S T A T E B u f f e r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 7
M Physical Dimensions (Continued) M 7 Dimensions are in millimeters unless otherwise noted. 4 H C T 5 4 0 , I n v e r t i n g O c t a l 3 - S T A T E B u f f e r M M 7 4 H C T 5 4 1 , O c t a l 3 - S T A T E B u f f e r Figure 2. 20-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide Package Number M20D ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 8
M Physical Dimensions (Continued) M 7 Dimensions are in millimeters unless otherwise noted. 4 H C T 5 4 0 , I n v e r t i n g O c t a l 3 - S T A T E B u f f e r M M 7 4 H C T 5 4 1 , O c t a l 3 - S T A T E B u f f e r Figure 3. 20-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide Package Number MTC20 ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 9
M Physical Dimensions (Continued) M 7 Dimensions are in inches (millimeters) unless otherwise noted. 4 H C T 5 4 0 , I n v e r t i n g O c t a l 3 - S T A T E B u f f e r M M 7 4 Figure 4. 20-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide H C Package Number N20A T 5 4 1 , O c t a l 3 - S T A T E B u f f e r ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 10
M M 7 4 H C T TRADEMARKS 5 4 ThefollowingareregisteredandunregisteredtrademarksandservicemarksFairchildSemiconductorownsorisauthorizedtouseand 0 isnotintendedtobeanexhaustivelistofallsuchtrademarks , I n v ACEx® GreenFPS™e-Series™ Power-SPM™ SyncFET™ er BuilditNow™ GTO™ PowerTrench® ThePowerFranchise® ti n CorePLUS™ i-Lo™ ProgrammableActiveDroop™ ™ g CROSSVOLT™ IntelliMAX™ QFET® TinyBoost™ O CTL™ ISOPLANAR™ QS™ TinyBuck™ c CurrentTransferLogic™ MegaBuck™ QTOptoelectronics™ TinyLogic® ta EcoSPARK® MICROCOUPLER™ QuietSeries™ l TINYOPTO™ 3 FACTQuietSeries™ MicroPak™ RapidConfigure™ TinyPower™ - FACT® Motion-SPM™ SMARTSTART™ S TinyPWM™ T FAST® OPTOLOGIC® SPM® TinyWire™ A FastvCore™ OPTOPLANAR® STEALTH™ µSerDes™ TE FPS™ PDP-SPM™ SuperFET™ UHC® FRFET® Power220® SuperSOT™-3 B GlobalPowerResourceSM Power247® SuperSOT™-6 UniFET™ u VCX™ f GreenFPS™ POWEREDGE® SuperSOT™-8 fe r M M DISCLAIMER 7 FAIRCHILDSEMICONDUCTORRESERVESTHERIGHTTOMAKECHANGESWITHOUTFURTHERNOTICETOANYPRODUCTS 4 H HEREINTOIMPROVERELIABILITY,FUNCTION,ORDESIGN.FAIRCHILDDOESNOTASSUMEANYLIABILITYARISINGOUTOF C THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE T UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF 5 4 FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE 1 PRODUCTS. , O c t a LIFESUPPORTPOLICY l FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR 3 - SYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION. S T A Asusedherein: T 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support E which,(a)areintendedforsurgicalimplantintothebody,or deviceorsystemwhosefailuretoperformcanbereasonably B (b) support or sustain life, and (c) whose failure to perform expected to cause the failure of the life support device or u when properly used in accordance with instructions for use system,ortoaffectitssafetyoreffectiveness. ff e providedinthelabeling,canbereasonablyexpectedtoresult r insignificantinjurytotheuser. PRODUCTSTATUSDEFINITIONS DefinitionofTerms DatasheetIdentification ProductStatus Definition Thisdatasheetcontainsthedesignspecificationsforproductdevelopment. AdvanceInformation FormativeorInDesign Specificationsmaychangeinanymannerwithoutnotice. Thisdatasheetcontainspreliminarydata;supplementarydatawillbe Preliminary FirstProduction publishedatalaterdate.FairchildSemiconductorreservestherighttomake changesatanytimewithoutnoticetoimprovedesign. Thisdatasheetcontainsfinalspecifications.FairchildSemiconductorreserves NoIdentificationNeeded FullProduction therighttomakechangesatanytimewithoutnoticetoimprovedesign. Thisdatasheetcontainsspecificationsonaproductthathasbeen Obsolete NotInProduction discontinuedbyFairchildsemiconductor.Thedatasheetisprintedfor referenceinformationonly. Rev.I28 ©1984 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.3 11
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