MJL21195(cid:2)(PNP), MJL21196(cid:2)(NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • Total Harmonic Distortion Characterized 16 A COMPLEMENTARY • High DC Current Gain SILICON POWER • Excellent Gain Linearity TRANSISTORS • High SOA 250 V, 200 W • Epoxy Meets UL 94, V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* COMPLEMENTARY COLLECTOR COLLECTOR MAXIMUM RATINGS 2 2 Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc 1 1 Collector−Base Voltage VCBO 400 Vdc BASE BASE Emitter−Base Voltage VEBO 5 Vdc 3 3 Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc EMITTER EMITTER Collector Current − Continuous IC 16 Adc MARKING Collector Current − Peak (Note 1) ICM 30 Adc DIAGRAM Base Current − Continuous IB 5 Adc Total Power Dissipation PD @ TC = 25°C 200 W Derate Above 25°C 1.43 W/°C MJL2119x 1 Operating and Storage Junction TJ, Tstg −(cid:2)(cid:2)65 to +150 °C 2 3 AYYWWG Temperature Range TO−264 ESD − Human Body Model HBM 3B V CASE 340G STYLE 2 ESD − Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended x = 5 or 6 Operating Conditions is not implied. Extended exposure to stresses above the A = Assembly Location Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 (cid:2)s, Duty Cycle ≤10%. YY = Year WW = Work Week G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Thermal Resistance, Junction−to−Case R(cid:3)JC 0.7 °C/W Device Package Shipping MJL21195G TO−264 25 Units / Rail (Pb−Free) MJL21196G TO−264 25 Units / Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2013 − Rev. 5 MJL21195/D

MJL21195 (PNP), MJL21196 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) 250 − − Collector Cutoff Current ICEO (cid:2)Adc (VCE = 200 Vdc, IB = 0) − − 100 OFF CHARACTERISTICS (Note 3) Emitter Cutoff Current IEBO (cid:2)Adc (VCE = 5 Vdc, IC = 0) − − 100 Collector Cutoff Current ICEX (cid:2)Adc (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) − − 100 SECOND BREAKDOWN (Note 3) Second Breakdown Collector Current with Base Forward Biased IS/b Adc (VCE = 50 Vdc, t = 1 s (Nonrepetitive) 4.0 − − (VCE = 80 Vdc, t = 1 s (Nonrepetitive) 2.25 − − ON CHARACTERISTICS (Note 3) DC Current Gain hFE − (IC = 8 Adc, VCE = 5 Vdc) 25 − 100 (IC = 16 Adc, IB = 5 Adc) 8.0 − − Base−Emitter On Voltage VBE(on) Vdc (IC = 8 Adc, VCE = 5 Vdc) − − 2.2 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8 Adc, IB = 0.8 Adc) − − 1.4 (IC = 16 Adc, IB = 3.2 Adc) − − 4 DYNAMIC CHARACTERISTICS (Note 3) Total Harmonic Distortion at the Output THD % (VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS) hFE unmatched − 0.8 − (Matched pair hFE = 50 @ 5 A/5 V) hFE matched − 0.08 − Current Gain Bandwidth Product fT MHz (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) 4 − − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) − − 500 2. Pulse Test: Pulse Width = 5.0 (cid:2)s, Duty Cycle ≤10%. 3. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤2%. PNP MJL21195 NPN MJL21196 6.5 7.5 Hz) Hz) 7.0 T (M 6.0 VCE = 10 V T (M 6.5 VCE = 10 V UC 5.5 UC 6.0 D D O O 5.5 R 5.0 R DTH P 4.5 VCE = 5 V DTH P 54..05 VCE = 5 V DWI 4.0 DWI 4.0 N N 3.5 A A T B 3.5 T B 3.0 URREN 3.0 TfteJs =t = 2 51° MCHz URREN 22..05 TfteJs =t = 2 51° MCHz C 2.5 C , T , T 1.5 F 2.0 F 1.0 0.1 1.0 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Typical Current Gain Figure 2. Typical Current Gain Bandwidth Product Bandwidth Product http://onsemi.com 2

MJL21195 (PNP), MJL21196 (NPN) TYPICAL CHARACTERISTICS PNP MJL21195 NPN MJL21196 1000 1000 N N AI AI G G T T RREN 100 TJ = 100°C RREN 100 TJ = 100°C CU 25°C CU 25°C C C D D , FE -(cid:2)25°C , FE -(cid:2)25°C h h VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain, V = 20 V Figure 4. DC Current Gain, V = 20 V CE CE PNP MJL21195 NPN MJL21196 1000 1000 N N AI AI G G T T N N RRE 100 TJ = 100°C RRE 100 TJ = 100°C U U C C 25°C C C 25°C D D h , FE -(cid:2)25°C h , FE -(cid:2)25°C VCE = 5 V VCE = 5 V 10 10 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. DC Current Gain, V = 5 V Figure 6. DC Current Gain, V = 5 V CE CE PNP MJL21195 NPN MJL21196 30 30 2.0 A 2.0 A 1.5 A T (A) 25 1.5 A T (A) 25 1.0 A N N RE 20 1.0 A RE 20 R R U U IB = 0.5 A R C 15 IB = 0.5 A R C 15 O O T T C C E E LL 10 LL 10 O O C C , C , C I 5.0 I 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 25 0 5.0 10 15 20 25 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics http://onsemi.com 3

MJL21195 (PNP), MJL21196 (NPN) TYPICAL CHARACTERISTICS PNP MJL21195 NPN MJL21196 3.0 1.4 S)2.5 TJ = 25°C S) TJ = 25°C OLT IC/IB = 10 OLT 1.2 IC/IB = 10 V V GE (2.0 GE ( 1.0 VBE(sat) A A T T L L 0.8 O1.5 O V V N N ATIO1.0 VBE(sat) ATIO 0.6 R R U U 0.4 SAT0.5 SAT VCE(sat) 0.2 VCE(sat) 0 0 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJL21195 NPN MJL21196 TS) 10 S) 10 L T O L GE (V TJ = 25°C E (VO TJ = 25°C A G T A L T O L V O ER R V TT 1.0 TE 1.0 EMI MIT - E E - S E A S B A , BE(on) VVCCEE == 250 V V , BE(on) VVCCEE == 250 V V V B 0.1 V 0.1 0.1 1.0 10 100 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary S) breakdown. Safe operating area curves indicate I − V P C CE AM 10 ms limits of the transistor that must be observed for reliable NT (10 operation; i.e., the transistor must not be subjected to greater E R 1 Sec dissipation than the curves indicate. R R CU 50 ms The data of Figure 13 is based on TJ(pk) = 150°C; TC is O variable depending on conditions. At high case T C E1.0 temperatures, thermal limitations will reduce the power than L OL 250 ms can be handled to values less than the limitations imposed by C , C second breakdown. I 0.1 1.0 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Active Region Safe Operating Area http://onsemi.com 4

MJL21195 (PNP), MJL21196 (NPN) 10000 10000 Cib Cib F) F) p p E ( E ( C C N N A A T 1000 T 1000 CI CI A A AP Cob AP C C C, C, TJ = 25°C TJ = 25°C Cob ftest = 1 MHz ftest = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJL21195 Typical Capacitance Figure 15. MJL21196 Typical Capacitance 1.2 1.1 C ONI%) 1.0 RMN ( AO L HRTI 0.9 AO OTST , TDDI 0.8 H T 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS SOURCE 50 (cid:4) TOTAL HARMONIC AMPLIFIER DUT DISTORTION ANALYZER 0.5 (cid:4) 0.5 (cid:4) 8.0 (cid:4) DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5

MJL21195 (PNP), MJL21196 (NPN) PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J Q 0.25 (0.010) M T B M −T− −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER C ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E U N MILLIMETERS INCHES DIM MIN MAX MIN MAX A 28.0 29.0 1.102 1.142 A B 19.3 20.3 0.760 0.800 C 4.7 5.3 0.185 0.209 L D 0.93 1.48 0.037 0.058 R 1 2 3 E 1.9 2.1 0.075 0.083 F 2.2 2.4 0.087 0.102 G 5.45 BSC 0.215 BSC P H 2.6 3.0 0.102 0.118 K J 0.43 0.78 0.017 0.031 K 17.6 18.8 0.693 0.740 L 11.2 REF 0.411 REF N 4.35 REF 0.172 REF W P 2.2 2.6 0.087 0.102 F2 PL Q 3.1 3.5 0.122 0.137 G R 2.25 REF 0.089 REF J U 6.3 REF 0.248 REF D3 PL H W 2.8 3.2 0.110 0.125 STYLE 2: 0.25 (0.010) M T B S PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJL21195/D 6

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