MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and 4.0 AMPERE low−speed switching applications. DARLINGTON POWER TRANSISTORS Features • COMPLEMENTARY SILICON High DC Current Gain − h = 2000 (Typ) @ I FE C 40 WATT = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication NPN PNP • Choice of Packages − MJE700 and MJE800 Series COLLECTOR 2, 4 COLLECTOR 2, 4 • These Devices are Pb−Free and are RoHS Compliant* BASE BASE 3 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO Vdc EMITTER 1 EMITTER 1 MJE700G, MJE800G 60 MJE800 MJE700 MJE702G, MJE703G, MJE802G, 80 MJE802 MJE702 MJE803G MJE803 MJE703 Collector−Base Voltage VCB Vdc MJE700G, MJE800G 60 MJE702G, MJE703G, MJE802G, 80 MJE803G Emitter−Base Voltage VEB 5.0 Vdc TO−225 CASE 77−09 Collector Current IC 4.0 Adc STYLE 1 Base Current IB 0.1 Adc To@tal TPCo w=e 2r5 D(cid:2)iCssipation PD 40 W 1 2 3 Derate above 25(cid:2)C 0.32 mW/(cid:2)C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg –55 to +150 (cid:2)C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be YWW assumed, damage may occur and reliability may be affected. JEx0yG THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Y =Year Thermal Resistance, Junction−to−Case R(cid:2)JC 3.12 (cid:2)C/W WW =Work Week Thermal Resistance, Junction−to−Ambient R(cid:2)JA 83.3 (cid:2)C/W JEx0y =Device Code x = 7 or 8 y = 0, 2, or 3 G =Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please See detailed ordering and shipping information in the package download the ON Semiconductor Soldering and Mounting Techniques dimensions section on page 5 of this data sheet. Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2013 − Rev. 12 MJE700/D

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc (IC = 50 mAdc, IB = 0) MJE700G, MJE800G 60 − MJE702G, MJE703G, MJE802G, MJE803G 80 − Collector Cutoff Current ICEO (cid:3)Adc (VCE = 60 Vdc, IB = 0) MJE700G, MJE800G − 100 (VCE = 80 Vdc, IB = 0) MJE702G, MJE703G, MJE802G, MJE803G − 100 Collector Cutoff Current ICBO (cid:3)Adc (VCB = Rated BVCEO, IE = 0) − 100 (VCB = Rated BVCEO, IE = 0, TC = 100(cid:2)C) − 500 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 2.0 ON CHARACTERISTICS DC Current Gain (Note 1) hFE − (IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700G, MJE702G, MJE800G, MJE802G 750 − (IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703G, MJE803G 750 − (IC = 4.0 Adc, VCE = 3.0 Vdc) All devices 100 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = 1.5 Adc, IB = 30 mAdc) MJE700G, MJE702G, MJE800G, MJE802G − 2.5 (IC = 2.0 Adc, IB = 40 mAdc) MJE703G, MJE803G − 2.8 (IC = 4.0 Adc, IB = 40 mAdc) All devices − 3.0 Base−Emitter On Voltage (Note 1) VBE(on) Vdc (IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700G, MJE702G, MJE800G, MJE802G − 2.5 (IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703G, MJE803G − 2.5 (IC = 4.0 Adc, VCE = 3.0 Vdc) All devices − 3.0 DYNAMIC CHARACTERISTICS Small−Signal Current Gain hfe − (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) 1.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2.0%. 50 S) T 40 T A W N ( O 30 TI A P SI S DI 20 R E W O P 10 , D P 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) 4.0 R(cid:5)BD &1 ,R MCU VSATR BIEED F TAOS TO BRTEACION VDEERSYIR TEYDP EC,U eR.gR.:ENT LEVELS -V(cid:4)3C0C V ts VICC/ICB == 3205 0V ITBJ1 == 2IB52°C (cid:5)(cid:5)1N5825 USED ABOVE IB ≈ 100 mA 2.0 (cid:5)(cid:5)MSD6100 USED BELOW IB ≈ 100 mA RC SCOPE TUT APPVR2OX RB μE ((cid:2)(cid:3)s) 1.0 tf +(cid:4)8.0 V M 0.8 0 51 D1 ≈ 6.0 k ≈ 150 t, TI 0.6 tr V1 APPROX 0.4 + 4.0 V -12 V 25 (cid:3)s td @ VBE(off) = 0 For td and tr, D1 id disconnected PNP tDr,U tfT ≤Y 1C0Y nCsLE = 1.0% aton odb Vta2i n= d0e, sRirBe da nteds Rt cCu arrreen vtsa.ried 0.2 NPN For NPN test circuit, reverse diode, 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 polarities and input pulses. IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit Figure 3. Switching Times 1.0 CE 0.7 D = 0.5 N 0.5 A T S SI 0.3 0.2 E MAL RZED)0.2 0.1 (cid:2)JC(t) = r(t) (cid:2)JC P(pk) ERALI0.1 0.05 (cid:2)JC = 3.12°C/W MAX HM D CURVES APPLY FOR POWER SIENT T(NOR00..0057 0.01 PRUELASDE T TIMREA IANT S t1HOWN t1 t2 AN 0.03 SINGLE PULSE TJ(pk) - TC = P(pk) (cid:2)JC(t) DUTY CYCLE, D = t1/t2 R T r(t), 0.02 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms) Figure 4. Thermal Response (MJE700, 800 Series) ACTIVE−REGION SAFE−OPERATING AREA 10 10 7.0 7.0 P) 5.0 5.0(cid:3)ms 1.0(cid:3)ms 100(cid:3)(cid:3)s P) 5.0 5.0(cid:3)ms 1.0(cid:3)ms 100(cid:3)(cid:3)s M M A A T ( 3.0 T ( 3.0 N N E 2.0 dc E 2.0 dc R R R R U U R C 1.0 TJ = 150°C R C 1.0 TJ = 150°C O 0.7 BONDING WIRE LIMITED O 0.7 BONDING WIRE LIMITED T T EC 0.5 THERMALLY LIMITED EC 0.5 THERMALLY LIMITED COLL 0.3 @SE TCCO =N D25 B°RCE (SAIKNDGOLWE NP ULLIMSIET)ED COLL 0.3 @SE TCCO =N D25 B°RCE (SAIKNDGOLWE NP ULLIMSIET)ED , C 0.2 , C 0.2 I MJE702, 703 I MJE802, 803 MJE700 MJE800 0.1 0.1 5.0 7.0 10 20 30 50 70 100 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE700 Series Figure 6. MJE800 Series There are two limitations on the power handling ability of The data of Figures 5 and 6 are based on T = 150(cid:2)C; J(pk) a transistor: average junction temperature and second T is variable depending on conditions. Second breakdown C breakdown. Safe operating area curves indicate I − V pulse limits are valid for duty cycles to 10% provided T C CE J(pk) limits of the transistor that must be observed for reliable < 150(cid:2)C. T may be calculated from the data in Figure 4. J(pk) operation; i.e., the transistor must not be subjected to greater At high case temperatures, thermal limitations will reduce dissipation than the curves indicate. the power that can be handled to values less than the limitations imposed by second breakdown. http://onsemi.com 3

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) PNP NPN MJE700 Series MJE800 Series 6.0 k 6.0 k 4.0 k TJ = 125°C VCE = 3.0 V 4.0 k TJ = 125°C VCE = 3.0 V N 3.0 k 25°C N 3.0 k AI AI T G 2.0 k T G 2.0 k 25°C N N E E R R CUR -(cid:4)55°C CUR -(cid:4)55°C C 1.0 k C 1.0 k , DE 800 , DE 800 F F h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7. DC Current Gain S) 3.4 S) 3.4 VOLT 3.0 TJ = 25°C VOLT 3.0 IC = TJ = 25°C GE ( IC = 1.0 A 2.0 A 4.0 A GE ( 0.5 A 1.0 A 2.0 A 4.0 A TA 2.6 0.5 A TA 2.6 L L O O V V R 2.2 R 2.2 E E T T T T EMI 1.8 EMI 1.8 - - R R O O T 1.4 T 1.4 C C E E L L L L O 1.0 O 1.0 C C , E , E VC 0.6 VC 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.8 1.8 S) S) T T VOL 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V VOL 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V E ( E ( G G A A T T L 1.0 L 1.0 O O V, V VCE(sat) @ IC/IB = 250 V, V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. “On” Voltages http://onsemi.com 4

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) ORDERING INFORMATION Device Package Shipping MJE700G TO−225 50 Units / Bulk (Pb−Free) MJE702G TO−225 50 Units / Bulk (Pb−Free) MJE703G TO−225 50 Units / Bulk (Pb−Free) MJE800G TO−225 50 Units / Bulk (Pb−Free) MJE802G TO−225 50 Units / Bulk (Pb−Free) MJE803G TO−225 50 Units / Bulk (Pb−Free) http://onsemi.com 5

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AC 1 3 2 3 2 1 FRONT VIEW BACK VIEW E NOTES: 1.DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. Q A 3.NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 MILLIMETERS BACKSIDE TAB DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 D b2 0.51 0.88 P c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 1 2 3 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3.30 L1 Q 3.80 4.20 STYLE 1: L PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJE700/D 6

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJE700 MJE702 MJE703 MJE800 MJE802 MJE803