MJE4343 (NPN), MJE4353 (PNP) High-Voltage - High Power Transistors ...designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features • 16 AMPS High Collector−Emitter Sustaining Voltage − NPN PNP POWER TRANSISTORS VCEO(sus) = 160 Vdc − MJE4343 MJE4353 COMPLEMENTARY • High DC Current Gain − @ I = 8.0 Adc h = 35 (Typ) C FE SILICON • Low Collector−Emitter Saturation Voltage − 160 VOLTS V = 2.0 Vdc (Max) @ I CE(sat) C = 8.0 Adc • These are Pb−Free Devices 4 MAXIMUM RATINGS SOT−93 CASE 340D Rating Symbol Max Unit STYLE 1 Collector−Emitter Voltage VCEO 160 Vdc 1 Collector−Base Voltage VCB 160 Vdc 2 Emitter−Base Voltage VEB 7.0 Vdc 3 Collector Current − IC Adc Continuous 16 TO−247 Peak (Note 1) 20 CASE 340L STYLE 3 Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC PD 125 Watts = 25°C Operating and Storage Junc- TJ, Tstg –65 to +150 °C NOTE: Effective June 2012 this device will tion be available only in the TO−247 Temperature Range package. Reference FPCN# 16827. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction R(cid:2)JC 1.0 °C/W to Case ORDERING INFORMATION 1. Pulse Test: Pulse Width (cid:2) 5.0 (cid:3)s, Duty Cycle (cid:3) 10%. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2012 − Rev. 5 MJE4343/D

MJE4343 (NPN), MJE4353 (PNP) MARKING DIAGRAMS TO−247 SOT−93 MJE43x3 AYWWG AYWWG MJE43x3 G 1 BASE 3 EMITTER 1 BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR MJE43x3 =Device Code A =Assembly Location Y =Year WW =Work Week G =Pb−Free Package ORDERING INFORMATION Device Order Number Package Type Shipping MJE4343G SOT−93 30 Units / Rail (Pb−Free) MJE4353G SOT−93 30 Units / Rail (Pb−Free) MJE4343G TO−247 30 Units / Rail (Pb−Free) MJE4353G TO−247 30 Units / Rail (Pb−Free) 3.5 S) T T A 3.0 W ON ( 2.5 TI A SIP 2.0 S DI R 1.5 E W O 1.0 P , D P 0.5 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating Reference: Ambient Temperature http://onsemi.com 2

MJE4343 (NPN), MJE4353 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎEÎÎLEÎÎCTRÎÎICAÎÎL CÎÎHAÎÎRACÎÎTEÎÎRISÎÎTICÎÎS (TÎÎC = 2ÎÎ5°CÎÎ unleÎÎss oÎÎtherÎÎwiseÎÎ notÎÎed) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎChÎÎaraÎÎcteriÎÎsticÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSyÎÎmboÎÎl ÎÎÎÎÎMinÎÎÎÎÎMÎÎax ÎÎÎÎÎUniÎÎt ÎÎÎÎOFFÎÎ CHAÎÎRAÎÎCTEÎÎRISTÎÎICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎCoÎllectoÎr−EÎmitteÎr SuÎstainÎing ÎVoltaÎge (ÎNoteÎ 2)ÎÎÎÎÎÎÎÎÎÎÎÎVCEÎO(suÎs) ÎÎÎÎÎÎÎÎÎÎVdcÎ (IC = 200 mAdc, IB = 0) 160 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Cutoff Current ICEO (cid:3)Adc ÎÎÎÎ(ÎÎVCEÎÎ = 80ÎÎ VdcÎÎ, IB ÎÎ= 0)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎÎÎÎ7ÎÎ50 ÎÎÎÎÎÎÎÎ ÎÎCoÎllectoÎr−EÎmitteÎr CuÎtoff ÎCurrÎent ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIÎCEXÎÎÎÎ− ÎÎÎ1Î.0 ÎÎÎmAdÎc ÎÎ(ÎVCEÎ = RÎatedÎ VCBÎ, VEÎB(off)Î = 1.Î5 VdÎc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎ5Î.0 ÎÎÎÎ (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150°C) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Cutoff Current ICBO − 750 (cid:3)Adc ÎÎÎÎ(ÎÎVCBÎÎ = RÎÎatedÎÎ VCBÎÎ, IE =ÎÎ 0)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎEmÎitterÎ−BasÎe CÎutoffÎ CurÎrentÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIÎEBOÎÎÎÎ− ÎÎÎ1Î.0 ÎÎÎmAdÎc ÎÎÎÎ(ÎÎVBEÎÎ = 7.ÎÎ0 VdÎÎc, ICÎÎ = 0)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎON CÎÎHAÎÎRACÎÎTERÎÎISTÎÎICS ÎÎ(NotÎÎe 2)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎDCÎ CurÎrentÎ GainÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhFEÎÎÎÎÎÎÎÎÎÎÎ−Î (IC = 8.0 Adc, VCE = 2.0 Vdc) 15 35 (Typ) ÎÎ(ÎIC =Î 16 AÎdc, ÎVCE Î= 4.Î0 VdÎc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ8.0ÎÎÎ15 (ÎTyp)ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage VCE(sat) Vdc ÎÎ(ÎIC =Î 8.0 ÎAdc,Î IB =Î 800Î mA)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ− ÎÎÎ2Î.0 ÎÎÎÎ (IC = 16 Adc, IB = 2.0 Adc) − 3.5 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎBaÎse−EÎmittÎer SÎaturaÎtionÎ VoltÎageÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVBÎE(saÎt) ÎÎÎ− ÎÎÎ3Î.9 ÎÎÎVdcÎ (IC = 16 Adc, IB = 2.0 Adc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage VBE(on) − 3.9 Vdc ÎÎÎÎ(ÎÎIC =ÎÎ 16 AÎÎdc, ÎÎVCE ÎÎ= 4.ÎÎ0 VdÎÎc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎDYNÎÎAMIÎÎC CHÎÎARÎÎACTÎÎERIÎÎSTICÎÎS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎCuÎrrentÎ−GaÎin − ÎBanÎdwidÎth PÎroduÎct (NÎote Î3) ÎÎÎÎÎÎÎÎÎÎÎÎÎfT ÎÎÎÎ1.0ÎÎÎÎ− ÎÎÎMHzÎ ÎÎÎÎ(ÎÎIC =ÎÎ 1.0 ÎÎAdc,ÎÎ VCEÎÎ = 2ÎÎ0 VdÎÎc, fteÎÎst = ÎÎ0.5 MÎÎHz)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎOuÎtput ÎCapÎacitaÎnceÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCobÎÎÎÎ− ÎÎÎ8Î00 ÎÎÎpFÎ (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:3) 2.0%. 3. fT = ⎪hfe⎪• ftest. http://onsemi.com 3

MJE4343 (NPN), MJE4353 (PNP) VCC +(cid:4)30 V 3.0 2.0 TJ = 25°C 25 (cid:3)s RC 1.0 IVCC/IEB == 3100 V +11 V RB SCOPE 0.7 0 s) 0.5 tr μ(cid:2)(cid:3) -(cid:4)9.0 V 51 D1 ME ( 0.3 TI 0.2 tr, tf ≤ 10 ns -(cid:4)4 V t, DUTY CYCLE = 1.0% 0.1 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.07 td @ VBE(off) = 5.0 V (cid:5)D1 MUST BE FAST RECOVERY TYPE, e.g.: 0.05 (cid:5)(cid:5)1N5825 USED ABOVE IB ≈ 100 mA (cid:5)(cid:5)MSD6100 USED BELOW IB ≈ 100 mA 0.03 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Note: Reverse polarities to test PNP devices. IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit Figure 3. Typical Turn−On Time TYPICAL CHARACTERISTICS 5.0 2.0 TJ = 25°C TJ = 25°C IC/IB = 10 3.0 ts IB1 = IB2 1.6 VCE = 30 V S) T L μE ((cid:2)(cid:3)s) 2.0 GE (VO 1.2 M A t, TI OLT 0.8 VBE(sat) @ IC/IB = 10 V 1.0 V, VBE @ VCE = 2.0 V tf 0.4 0.7 VCE(sat) @ IC/IB = 10 0.5 0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 4. Turn−Off Time Figure 5. On Voltages http://onsemi.com 4

MJE4343 (NPN), MJE4353 (PNP) DC CURRENT GAIN 1000 1000 N N AI AI G G T T N N E E R R R 100 R 100 U U C C DC 50 VCE = 2 V DC VVCCEE = = 2 2 V V , FE TJ = 150°C , FE TTJJ = = 1 15500°°CC h 25°C h 2255°°CC 20 -(cid:4)55°C --(cid:4)5(cid:4)555°°CC 10 10 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. MJE4340 Series (NPN) Figure 7. MJE4350 Series (PNP) S) 2.0 T VOL TJ = 25°C E ( 1.6 G A OLT IC = 4.0 A 8.0 A 16 A V R 1.2 E T T MI -E 0.8 R O T C E L 0.4 L O C , E VC 0 0.050.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 IB, BASE CURRENT (AMP) Figure 8. Collector Saturation Region 1.0 AL D = 0.5 M 0.5 ERD) HE TZ 0.2 T LI NA 0.2 r(t), EFFECTIVE TRANSIERESISTANCE (NORM000..00.152 00.0.05SP2IUNLGSL0EE.1 0.01 (cid:2)(cid:2)DPRTJJJU EC(CCpLA( Uk=StD)) R E- 1=TV . TT0IrEM(CR°tS)C EA = (cid:2)/A I WANPJPTC( PpSM tkL1H)AY (cid:2)OX FJWCO(NtR) POWER P(pkD)UTtY1 CtY2CLE, D = t1/t2 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 t, TIME (ms) Figure 9. Thermal Response http://onsemi.com 5

MJE4343 (NPN), MJE4353 (PNP) 100 There are two limitations on the power handling ability of 50 a transistor: average junction temperature and second MP) breakdown. Safe operating area curves indicate IC − VCE T (A 20 5.0(cid:3)ms limits of the transistor that must be observed for reliable EN 10 operation; i.e., the transistor must not be subjected to greater R R 5.0 dc dissipation than the curves indicate. U R C The data of Figure 10 is based on TC = 25°C; TJ(pk) is O 2.0 T variable depending on power level. Second breakdown C LE 1.0 pulse limits are valid for duty cycles to 10% but must be L CO 0.5 derated when TC ≥ 25°C. Second breakdown limitations do , C SECONDARY BREAKDOWN LIMITED not derate the same as thermal limitations. Allowable I 0.2 THERMAL LIMIT TC = 25°C current at the voltages shown on Figure 10 may be found at BONDING WIRE LIMITED 0.1 any case temperature by using the appropriate curve on 3.0 5.0 7.0 10 20 30 50 70 100 150200 Figure 9. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Maximum Forward Bias Safe 20 Operating Area S) P REVERSE BIAS M A For inductive loads, high voltage and high current must be RENT ( 16 TVJB E=( o1ff0) 0≤° C5 V sustained simultaneously during turn−off, in most cases, R U C 12 with the base to emitter junction reverse biased. Under these R O conditions the collector voltage must be held to a safe level T C at or below a specific value of collector current. This can be LE 8.0 L accomplished by several means such as active clamping, RC CO snubbing, load line shaping, etc. The safe level for these , C I 4.0 devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current conditions during 20 40 60 80 100 120 140 160 180 reverse biased turn−off. This rating is verified under VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics. Figure 11. Maximum Reverse Bias Safe Operating Area http://onsemi.com 6

MJE4343 (NPN), MJE4353 (PNP) PACKAGE DIMENSIONS SOT−93 (TO−218) CASE 340D−02 ISSUE E C NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI B Q E Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX U 4 A --- 20.35 --- 0.801 A B 14.70 15.20 0.579 0.598 S L C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054 K 1 2 3 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L --- 16.20 --- 0.638 Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF J V 1.75 REF 0.069 D H STYLE 1: PIN 1. BASE V 2. COLLECTOR G 3. EMITTER 4. COLLECTOR TO−247 CASE 340L−02 ISSUE F −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI C Y14.5M, 1982. −B− 2. CONTROLLING DIMENSION: MILLIMETER. E MILLIMETERS INCHES U L DIM MIN MAX MIN MAX A 20.32 21.08 0.800 8.30 N 4 B 15.75 16.26 0.620 0.640 C 4.70 5.30 0.185 0.209 A −Q− D 1.00 1.40 0.040 0.055 E 1.90 2.60 0.075 0.102 1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084 G 5.45 BSC 0.215 BSC H 1.50 2.49 0.059 0.098 P J 0.40 0.80 0.016 0.031 −Y− K 19.81 20.83 0.780 0.820 L 5.40 6.20 0.212 0.244 K N 4.32 5.49 0.170 0.216 P --- 4.50 --- 0.177 Q 3.55 3.65 0.140 0.144 U 6.15 BSC 0.242 BSC W 2.87 3.12 0.113 0.123 W J F2 PL H STYPLINE 13.:BASE G 2.COLLECTOR D3 PL 3.EMITTER 4.COLLECTOR 0.25 (0.010) M Y Q S http://onsemi.com 7

MJE4343 (NPN), MJE4353 (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJE4343/D 8