MJE371G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http://onsemi.com Features • High DC Current Gain 4 AMPERES • MJE371 is Complementary to NPN MJE521 POWER TRANSISTOR • These Devices are Pb−Free and are RoHS Compliant* PNP SILICON MAXIMUM RATINGS 40 VOLTS, 40 WATTS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc COLLECTOR Collector−Base Voltage VCB 40 Vdc 2, 4 Emitter−Base Voltage VEB 4.0 Vdc Collector Current − Continuous IC 4.0 Adc 3 Collector Current − Peak ICM 8.0 Adc BASE Base Current − Continuous IB 2.0 Adc 1 To@tal TPCo w=e 2r5 D(cid:2)iCssipation PD 40 W EMITTER Derate above 25(cid:2)C 320 mW/(cid:2)C Operating and Storage Junction TJ, Tstg –65 to +150 (cid:2)C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be TO−225 assumed, damage may occur and reliability may be affected. CASE 77−09 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 2 3 Thermal Resistance, Junction−to−Case R(cid:2)JC 3.12 (cid:2)C/W MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS YWW JE371G Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc, IB = 0) (Note 1) 40 − Collector−Base Cutoff Current ICBO (cid:3)Adc Y = Year (VCB = 40 Vdc, IE = 0) − 100 WW = Work Week Emitter−Base Cutoff Current IEBO (cid:3)Adc JE371 = Device Code (VEB = 4.0 Vdc, IC = 0) − 100 G = Pb−Free Package ON CHARACTERISTICS DC Current Gain (Note 1) hFE − ORDERING INFORMATION (IC = 1.0 Adc, VCE = 1.0 Vdc) 40 − Device Package Shipping Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not MJE371G TO−225 500 Units / Box be indicated by the Electrical Characteristics if operated under different (Pb−Free) conditions. 1. Pulse Test: Pulse Width ≤(cid:4)300(cid:4)(cid:3)s, Duty Cycle ≤(cid:4)2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2013 − Rev. 9 MJE371/D

MJE371G 10 There are two limitations on the power handling ability of 100(cid:2)(cid:3)s a transistor: average junction temperature and second P)5.0 1.0(cid:2)ms breakdown. Safe operating area curves indicate I − V M C CE T (A3.0 5.0(cid:2)ms limits of the transistor that must be observed for reliable EN2.0 operation; i.e., the transistor must not be subjected to greater R R dissipation than the curves indicate. U dc R C1.0 TJ = 150°C The data of Figure 1 is based on TJ(pk) = 150(cid:2)C; TC is O T variable depending on conditions. Second breakdown pulse C0.5 LE BONDING WIRE LIMIT limits are valid for duty cycles to 10% provided TJ(pk) L CO0.3 SECOND BREAKDOWN LIMIT ≤ 150(cid:2)C. At high case temperatures, thermal limitations , C0.2 THERMAL LIMIT @ TC = 25°C will reduce the power that can be handled to values less then I the limitations imposed by second breakdown. 0.1 2.0 4.0 6.0 8.0 10 20 40 60 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active−Region Safe Operating Area 10 2.0 ED 7.0 150°C TJ = 25°C Z 5.0 MALI 3.0 VCE = 1.0 Vdc 1.6 TJ = 25°C R NO 2.0 TS) N, -(cid:3)55°C OL 1.2 GAI 1.0 E (V T G N 0.7 A RRE 0.5 OLT 0.8 VBE(sat) @ IC/IB = 10 CU V VBE(on) @ VCE = 1.0 V C 0.3 D 0.4 , E0.2 hF VCE(sat) @ IC/IB = 10 0.1 0 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.04.0 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1.0 2.03.04.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain Figure 3. “On” Voltage 1.0 ED) 0.7 D = 0.5 Z 0.5 ENTMALI 0.3 r(t), EFFECTIVE TRANSIRMAL RESISTANCE (NOR00000...000..21573 000.00..12.205 0.01 (cid:2)(cid:2)DPRTJJJU EC(CCpLA( Uk=StD)) R E- 3=TV . TT1IrEM(CR2tS) °EA = C(cid:2)A I ANPJ/PWTC( PpS tkLM1H)Y (cid:2)OA FJXWCO(NtR) POWER P(pkD)UTtY1 CtY2CLE, D = t1/t2 HE0.02 T SINGLE PULSE 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100 200 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 2

MJE371G PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AC 1 3 2 3 2 1 FRONT VIEW BACK VIEW E NOTES: 1.DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. Q A 3.NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 MILLIMETERS BACKSIDE TAB DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 D b2 0.51 0.88 P c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 1 2 3 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3.30 L1 Q 3.80 4.20 STYLE 1: L PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MJE371/D 3