MJD44H11(cid:2)(NPN), MJD45H11(cid:2)(PNP) Complementary Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 8 AMPERES • Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS, 20 WATTS (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • COMPLEMENTARY Electrically Similar to Popular D44H/D45H Series • COLLECTOR COLLECTOR Low Collector Emitter Saturation Voltage 2, 4 2, 4 • Fast Switching Speeds • Complementary Pairs Simplifies Designs • 1 1 Epoxy Meets UL 94 V−0 @ 0.125 in BASE BASE • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 3 3 EMITTER EMITTER Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 4 Compliant 4 4 MAXIMUM RATINGS (TA = 25(cid:2)C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) 1 Rating Symbol Max Unit 1 2 3 1 2 3 23 Collector−Emitter Voltage VCEO 80 Vdc DPAK DPAK IPAK Emitter−Base Voltage VEB 5 Vdc CASE 369C CASE 369G CASE 369D STYLE 1 STYLE 1 STYLE 1 Collector Current − Continuous IC 8 Adc Collector Current − Peak ICM 16 Adc Total Power Dissipation PD MARKING DIAGRAMS @ TC = 25°C 20 W Derate above 25°C 0.16 W/°C AYWW AYWW Total Power Dissipation (Note 1) PD J4 J4 @ TA = 25°C 1.75 W xH11G xH11G Derate above 25°C 0.014 W/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C DPAK IPAK Temperature Range A = Assembly Location ESD − Human Body Model HBM 3B V Y = Year ESD − Machine Model MM C V WW = Work Week J4xH11 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x = 4 or 5 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G = Pb−Free Package 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2016 − Rev. 20 MJD44H11/D

MJD44H11 (NPN), MJD45H11 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) R(cid:2)JA 71.4 °C/W Lead Temperature for Soldering TL 260 °C 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TA = 25(cid:2)C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 30 mA, IB = 0) 80 − − Collector Cutoff Current ICES (cid:3)A (VCE = Rated VCEO, VBE = 0) − − 1.0 Emitter Cutoff Current IEBO (cid:3)A (VEB = 5 Vdc) − − 1.0 ON CHARACTERISTICS Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8 Adc, IB = 0.4 Adc) − − 1 Base−Emitter Saturation Voltage VBE(sat) Vdc (IC = 8 Adc, IB = 0.8 Adc) − − 1.5 DC Current Gain hFE − (VCE = 1 Vdc, IC = 2 Adc) 60 − − (VCE = 1 Vdc, IC = 4 Adc) 40 − − DYNAMIC CHARACTERISTICS Collector Capacitance Ccb pF (VCB = 10 Vdc, ftest = 1 Mhz) MJD44H11 − 45 − MJD45H11 − 130 − Gain Bandwidth Product fT MHz (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz) MJD44H11 − 85 − MJD45H11 − 90 − SWITCHING TIMES Delay and Rise Times td + tr ns (IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11 − 300 − MJD45H11 − 135 − Storage Time ts ns (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 − 500 − MJD45H11 − 500 − Fall Time tf ns (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 − 140 − MJD45H11 − 100 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

MJD44H11 (NPN), MJD45H11 (PNP) 1 0.7 L D = 0.5 MA 0.5 THERZED) 0.3 0.2 r(t), EFFECTIVE TRANSIENT RESISTANCE (NORMALI000000....0000..217532 S00.I.0N025G0L.E1 PULSE0.01 RRDPRTJU E(cid:2)(cid:2)C(JJpLACCUkSD) ( Rt=E-) T V =6TTIE M.CrR2S( E5tA=) °A I RACNPPT(cid:2)/( PpWS JtkCL1H) Y M(cid:2)O FJAWCOX(NtR) POWER P(pkD)UTtY1 CtY2CLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1 k t, TIME (ms) Figure 1. Thermal Response 20 There are two limitations on the power handling ability of MP) 150 500(cid:2)(cid:3)s 100(cid:2)(cid:3)s ab retarakndsoiwstonr. :S aafvee roapgeer ajtuinngc taiorena tceumrvpeesr aitnudriec aaten dIC s−e cVoCndE A NT ( 3 dc 5(cid:2)ms 1(cid:2)ms limits of the transistor that must be observed for reliable E 2 operation; i.e., the transistor must not be subjected to greater R UR 1 dissipation than the curves indicate. C OR 0.5 THERMAL LIMIT @ TC = 25°C The data of Figure 2 is based on TJ(pk) = 150(cid:2)C; TC is CT 0.3 WIRE BOND LIMIT variable depending on conditions. Second breakdown pulse E L limits are valid for duty cycles to 10% provided T L J(pk) , COC0.1 ≤ 150(cid:2)C. TJ(pk) may be calculated from the data in I0.05 Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the 0.02 limitations imposed by second breakdown. 1 3 5 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 S) T 2 20 T A W N ( TC O 1.5 15 TI A P SI S DI 1 10 TA R SURFACE E W MOUNT O P 0.5 5 , D P 0 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 3. Power Derating www.onsemi.com 3

MJD44H11 (NPN), MJD45H11 (PNP) 1000 1000 VCE = 1 V VCE = 1 V N N 150°C AI 150°C AI G G 25°C T 25°C T N N RE −55°C RE −55°C R 100 R 100 U U C C C C D D , E , E F F h h 10 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 VCE = 4 V VCE = 4 V N N 150°C AI 150°C AI G G 25°C T 25°C T N N RE −55°C RE −55°C R 100 R 100 U U C C C C D D , E , E F F h h 10 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain V) V) E ( E ( G 0.8 G 0.8 A A T T OL 0.7 IC/IB = 20 OL 0.7 IC/IB = 20 N V 0.6 150°C N V 0.6 −55°C O O TI TI A 0.5 A 0.5 R R U U AT 0.4 AT 0.4 S S 25°C MIT 0.3 25°C MIT 0.3 E E 150°C L− 0.2 L− 0.2 OL −55°C OL C 0.1 C 0.1 , sat) 0 , sat) 0 E( 0.01 0.1 1 10 E( 0.01 0.1 1 10 C C V V IC, COLLECTOR CURRENT (A) IICC,, CCOOLLLLEECCTTOORR CCUURRRREENNTT ((AA)) Figure 8. MJD44H11 Saturation Voltage Figure 9. MJD45H11 Saturation Voltage V V CE(sat) CE(sat) www.onsemi.com 4

MJD44H11 (NPN), MJD45H11 (PNP) 1.4 1.4 N N O O TI 1.2 TI 1.2 A A R R U 1.0 U 1.0 T T T SAE (V)0.8 −55°C T SAE (V)0.8 −55°C E−EMIOLTAG0.6 25°C E−EMIOLTAG0.6 25°C ASV 150°C ASV 150°C B 0.4 B 0.4 , at) , at) E(s 0.2 IC/IB = 20 E(s 0.2 IC/IB = 20 B B V V 0 0 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. MJD44H11 Saturation Voltage Figure 11. MJD45H11 Saturation Voltage V V BE(sat) BE(sat) E (V) 2.0 E (V) 2.0 AG 1.8 TA = 25°C AG 1.8 TA = 25°C T T L 1.6 L 1.6 O O V V R 1.4 R 1.4 E E T 1.2 T 1.2 T T MI 1.0 MI 1.0 E E − − R 0.8 R 0.8 CTO 0.6 CTO 0.6 IC = 8 A LLE 0.4 IC = 8 A LLE 0.4 IC = 3 A , COCE 0.20 IC = 0.1 A 0.5 A 1 A IC = 3 A , COCE 0.20 IC = 0.1 A 0.5 A 1 A V 0.1 1 10 100 1000 10,000 V 0.1 1 10 100 1000 10,000 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 12. MJD44H11 Collector Saturation Figure 13. MJD45H11 Collector Saturation Region Region 1000 1000 F) F) Cob p p E ( E ( NC Cob NC A A T 100 T 100 CI CI A A P P A A C C C, C, 10 10 0.1 1 10 100 0.1 1 10 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance www.onsemi.com 5

MJD44H11 (NPN), MJD45H11 (PNP) 100 100 TH VCE = 2 V TH VCE = 2 V D D WI WI D D N N A A B B −T −T NC NC GAIODU GAIODU T−R T−R NP NP E E R R R R U U C C , u , u Ta Ta f 10 f 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. MJD44H11 Figure 17. MJD45H11 Current−Gain−Bandwidth Product Current−Gain−Bandwidth Product www.onsemi.com 6

MJD44H11 (NPN), MJD45H11 (PNP) ORDERING INFORMATION Device Package Type Package Shipping† MJD44H11G DPAK 369C 75 Units / Rail (Pb−Free) NJVMJD44H11G DPAK 369C 75 Units / Rail (Pb−Free) MJD44H11−1G DPAK−3 369D 75 Units / Rail (Pb−Free) MJD44H11RLG DPAK 369C 1,800 / Tape & Reel (Pb−Free) NJVMJD44H11RLG* DPAK 369C 1,800 / Tape & Reel (Pb−Free) MJD44H11T4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD44H11T4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) MJD44H11T5G DPAK 369C 2,500 / Tape & Reel (Pb−Free) MJD45H11G DPAK 369C 75 Units / Rail (Pb−Free) NJVMJD45H11G* DPAK 369C 75 Units / Rail (Pb−Free) MJD45H11−1G DPAK−3 369D 75 Units / Rail (Pb−Free) MJD45H11RLG DPAK 369C 1,800 / Tape & Reel (Pb−Free) NJVMJD45H11RLG* DPAK 369C 1,800 / Tape & Reel (Pb−Free) MJD45H11T4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD45H11T4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD44H11D3T4G* DPAK 369G 2,500 / Tape & Reel (Pb−Free) NJVMJD45H11D3T4G* DPAK 369G 2,500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable www.onsemi.com 7

MJD44H11 (NPN), MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: A 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. E C 2.CONTROLLING DIMENSION: INCHES. A 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- b3 B MENSIONS b3, L3 and Z. c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL 4 NOT EXCEED 0.006 INCHES PER SIDE. L3 Z 5.DIMENSIONS D AND E ARE DETERMINED AT THE D DETAIL A H 6.DOAUTTUEMRSM OA SATN EDX BT RAERME EDSE OTEFR TMHIEN EPDLA ASTT DICA TBUOMDY. 1 2 3 PLANE H. 7.OPTIONAL MOLD FEATURE. L4 INCHES MILLIMETERS NOTE 7 b2 c BOTTOM VIEW DIM MIN MAX MIN MAX A 0.086 0.094 2.18 2.38 e SIDE VIEW A1 0.000 0.005 0.00 0.13 b b 0.025 0.035 0.63 0.89 0.005 (0.13) M C b2 0.028 0.045 0.72 1.14 TOP VIEW b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 H Z Z D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC L2 GPLAAUNGEE C SPELAATNIENG H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L A1 BOTTOM VIEW L3 0.035 0.050 0.89 1.27 L1 ALTERNATE L4 −−− 0.040 −−− 1.01 CONSTRUCTIONS Z 0.155 −−− 3.93 −−− DETAIL A ROTATED 90(cid:2) CW STYLE 1: SOLDERING FOOTPRINT* PIN 1.BASE 2.COLLECTOR 3.EMITTER 6.20 3.00 4.COLLECTOR 0.244 0.118 2.58 0.102 5.80 1.60 6.17 0.228 0.063 0.243 (cid:2) (cid:3) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8

MJD44H11 (NPN), MJD45H11 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C B C NOTES: 1. DIMENSIONING AND TOLERANCING PER V R E ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS 4 Z DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.35 A S B 0.250 0.265 6.35 6.73 1 2 3 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 −T− F 0.037 0.045 0.94 1.14 SEATING G 0.090 BSC 2.29 BSC PLANE K H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 F J S 0.025 0.040 0.63 1.01 H V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− D 3 PL STYLE 1: G 0.13 (0.005) M T PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DPAK−3, SURFACE MOUNT CASE 369G ISSUE O NOTES: −T− SEATING 1. DIMENSIONING AND TOLERANCING PLANE PER ANSI Y14.5M, 1982. B C 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS V R E DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.22 B 0.250 0.265 6.35 6.73 4 C 0.086 0.094 2.19 2.38 Z D 0.027 0.035 0.69 0.88 A E 0.018 0.023 0.46 0.58 F 0.037 0.045 0.94 1.14 1 2 3 G 0.180 BSC 4.58 BSC U H 0.034 0.040 0.87 1.01 K J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 F L 0.090 BSC 2.29 BSC L J R 0.180 0.215 4.57 5.45 G H UV 00..003250 0.−0−50− 00..8591 1−.−2−7 D2 PL Z 0.155 −−− 3.93 −−− 0.13 (0.005) T STYLE 1: PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MJD44H11/D 9

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJD44H11-1G MJD44H11G MJD44H11RLG MJD44H11T4G MJD44H11T5G MJD45H11-1G MJD45H11G MJD45H11RLG MJD45H11T4G NJVMJD44H11RLG