MJD32C 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data  BVCEO > -100V  Case: TO252 (DPAK)  IC = -3A high Continuous Collector Current  Case Material: Molded Plastic, "Green" Molding Compound  ICM = -5A Peak Pulse Current UL Flammability Classification Rating 94V-0  Ideal for Power Switching or Amplification Applications  Moisture Sensitivity: Level 1 per J-STD-020  Complementary NPN Type: MJD31C  Terminals: Finish – Matte Tin Plated Leads, Solderable per  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208  Halogen and Antimony Free. “Green” Device (Note 3)  Weight: 0.34 grams (Approximate)  Qualified to AEC-Q101 Standards for High Reliability C TO252 (DPAK) B E Top View Device Schematic Pin Out Configuration Top View Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MJD32C-13 AEC-Q101 MJD32C 13 16 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MJD32C = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year (ex: 17 = 2017) WW = Week Code (01 - 53) MJD32C 1 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

MJD32C Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Continuous Collector Current IC -3 A Peak Pulse Collector Current ICM -5 A Continuous Base Current IB -1 A Power Dissipation PD 15 W Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit (Note 5) 3.9 Power Dissipation (Note 6) PD 2.1 W (Note 7) 1.6 (Note 5) 32 Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 59 C/W (Note 7) 80 Thermal Resistance, Junction to Leads (Note 8) RθJL 3.6 Operating and Storage Temperature Range TJ, TSTG -55 to +150 C ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except mounted on 25mm x 25mm 1oz copper. 7. Same as note (5), except mounted on minimum recommended pad (MRP) layout. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MJD32C 2 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

MJD32C Thermal Characteristics 10 10 V A) LiCmE(istaet)d A) VCE(sat) ent ( 1 DC ent ( 1 Limited DC urr 1s urr 100ms C 100ms C 10ms or 10ms or 1ms ect100m 1ms ect 0.1 100s Coll Single Pulse 100µs Coll Single Pulse -I C 101m00mTamb=25°C 1 10 100 -I C 0.010.1 TCASE=25°C1 10 100 -V Collector-Emitter Voltage (V) -V Collector-Emitter Voltage (V) CE CE Safe Operating Area Safe Operating Area 8 W) 80 TAMB=25°C W) C/ Minimum Copper C/ ° ° 6 ( ( e 60 e D=0.5 c c n D=0.5 n a a 4 st 40 st D=0.2 si si e e D=0.1 R D=0.2 Single Pulse R 2 al 20 al D=0.05 m D=0.05 m Single Pulse er D=0.1 er TCASE=25°C h 0 h 0 T 100µ 1m 10m 100m 1 10 100 1k T 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance MJD32C 3 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

MJD32C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Emitter Breakdown Voltage (Note 10) BVCEO -100   V IC = -30mA, IB = 0 Collector Cut-off Current ICEO   -1 μA VCB = -60V, IB = 0 Collector Cut-off Current ICES   -1 μA VCE = -100V, VEB = 0 Emitter Cut-off Current IEBO   -1 μA VEB = -5V, IC = 0 Collector-Emitter Saturation Voltage (Note 10) VCE(sat)   -1.2 V IC = -3.0A, IB = -375mA Base-Emitter Turn-On Voltage (Note 10) VBE(on)   -1.8 V IC = -3A, VCE = -4V DC Current Gain (Note 10) hFE 2150  50  VVCCEE == --44VV,, IICC == --13AA Current Signal Current Gain Hfe 20    VCE = -10V, IC = -0.5A, f = 1KHz Current Gain-Bandwidth Product fT 3.0   MHz IC = -500mA, VCE = -10V, f = 1MHz Note: 10. Measured under pulsed conditions. Pulse width  300μs. Duty cycle 2%. MJD32C 4 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

MJD32C Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1,000 1 VCE = -4V IC/IB = 8 R E CURRENT GAIN 100 TTTTAAAA === = 182 -55550°°5C°C°CC OLLECTOR-EMITTTION VOLTAGE (V) 0.1 TA = 8T5A° C= 1T5A0 °=C -5T5A°C = 25°C h, DC FE , CCE(SAT)SATURA0.01 V - 10 0.001 1 10 100 1,000 10,000 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current V) 1.4 V) 1.2 E ( E ( IC/IB = 8 TAG 1.2 VCE = -4V TAG 1.0 OL OL N V 1.0 N V O O 0.8 URN- 0.8 URATI TA = -55°C MITTER T 0.6 TTAA == 2-555°°CC TER SAT 00..46 TA = 25°C TA = 85°C SE-E 0.4 TA = 85°C EMIT TA = 150°C BA TA = 150°C SE- 0.2 , N) 0.2 BA -VBE(O 01 10 100 1,000 10,000 , BE(SAT) 01 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) -V -IC, COLLECTOR CURRENT (mA) Figure 3 Typical Base-Emitter Turn-On Voltage Figure 4 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 1,000 f = 1MHz F) p E ( C N Cibo TA100 CI A AP C Cobo 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 5 Typical Capacitan ce Characteristics MJD32C 5 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

MJD32C Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. E A b3 TO252 (DPAK) 7°±1° c Dim Min Max Typ L3 A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 D A2 b2 0.76 1.14 0.95 H L4 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 - - e - - 2.286 E 6.45 6.70 6.58 e b(3x) E1 4.32 - - b2(2x) H 9.40 10.41 9.91 L 1.40 1.78 1.59 0.508 Gauge Plane L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° - E1 D1 Seating Plane All Dimensions in mm a L A1 2.74REF Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1 Dimensions Value (in mm) C 4.572 Y1 X 1.060 X1 5.632 Y 2.600 Y2 Y1 5.700 Y2 10.700 C Y X Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. MJD32C 6 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

MJD32C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com MJD32C 7 of 7 January 2018 Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated

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