MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON • Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS • Straight Lead Version in Plastic Sleeves (“1” Suffix) 3 AMPERES • Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) 40 AND 100 VOLTS • Electrically Similar to Popular TIP31 and TIP32 Series 15 WATTS • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring COMPLEMENTARY Unique Site and Control Change Requirements; AEC−Q101 COLLECTOR COLLECTOR Qualified and PPAP Capable • 2,4 2,4 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS 1 1 BASE BASE Rating Symbol Max Unit Collector−Emitter Voltage VCEO Vdc 3 3 MJD31, MJD32 40 EMITTER EMITTER MJD31C, MJD32C 100 Collector−Base Voltage VCB Vdc 4 MJD31, MJD32 40 MJD31C, MJD32C 100 4 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 3.0 Adc 1 2 1 Collector Current − Peak ICM 5.0 Adc 3 23 Base Current IB 1.0 Adc DPAK IPAK Total Power Dissipation PD W CASE 369C CASE 369D @ TC = 25°C 15 W/°C STYLE 1 STYLE 1 Derate above 25°C 0.12 Total Power Dissipation PD W MARKING DIAGRAMS @ TA = 25°C 1.56 W/°C Derate above 25°C 0.012 Operating and Storage Junction Temperature TJ, Tstg −65 to °C AYWW YWW Range +150 J3xxG J3xxG ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V DPAK IPAK Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not A = Site Code be assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week THERMAL CHARACTERISTICS xx = 1, 1C, 2, or 2C G = Pb−Free Package Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 8.3 °C/W ORDERING INFORMATION Thermal Resistance, Junction−to−Ambient* R(cid:2)JA 80 °C/W See detailed ordering and shipping information in the package Lead Temperature for Soldering Purposes TL 260 °C dimensions section on page 8 of this data sheet. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2016 − Rev. 16 MJD31/D

MJD31 (NPN), MJD32 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) MJD31, MJD32 40 − MJD31C, MJD32C 100 − Collector Cutoff Current ICEO (cid:3)Adc (VCE = 40 Vdc, IB = 0) MJD31, MJD32 − 50 (VCE = 60 Vdc, IB = 0) − 50 MJD31C, MJD32C Collector Cutoff Current ICES (cid:3)Adc (VCE = Rated VCEO, VEB = 0) − 20 Emitter Cutoff Current IEBO mAdc (VBE = 5 Vdc, IC = 0) − 1 ON CHARACTERISTICS (Note 1) DC Current Gain hFE (IC = 1 Adc, VCE = 4 Vdc) 25 − (IC = 3 Adc, VCE = 4 Vdc) 10 50 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 3 Adc, IB = 375 mAdc) − 1.2 Base−Emitter On Voltage VBE(on) Vdc (IC = 3 Adc, VCE = 4 Vdc) − 1.8 DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) fT MHz (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) 3 − Small−Signal Current Gain hfe (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2%. 2. fT = ⎪hfe⎪• ftest. www.onsemi.com 2

MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS VCC TA TC +(cid:4)30 V 2.5 25 S) 25 (cid:3)s RC ATT 2 20 +11 V RB SCOPE W 0 N ( TIO 1.5 15 TA (SURFACE MOUNT) -(cid:4)9 V 51 D1 A P DISSI 1 10 TC tr, tf ≤ 10 ns -(cid:4)4 V R DUTY CYCLE = 1% E W O RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS , PD 0.5 5 (cid:5)D1 MUST BE FAST RECOVERY TYPE, e.g.: P (cid:5)(cid:5)1N5825 USED ABOVE IB ≈ 100 mA 0 0 (cid:5)(cid:5)MSD6100 USED BELOW IB ≈ 100 mA 25 50 75 100 125 150 REVERSE ALL POLARITIES FOR PNP. T, TEMPERATURE (°C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit 2 3 IC/IB = 10 2 IB1 = IB2 00..175 tr @ VCC = 30 V TJ = 25°C 0.17 tf @ VCC = 30 V ts′ ItTCsJ′/ I==B t2=s5 -1° 0C1/8 tf μME ((cid:2)(cid:3)s) 0.3 tr @ VCC = 10 V μME ((cid:2)(cid:3)s) 00..53 tf @ VCC = 10 V TI TI 0.2 t, 0.1 t, 0.07 td @ VBE(off) = 2 V 0.1 0.05 0.07 0.05 0.03 0.02 0.03 0.03 0.050.070.1 0.3 0.5 0.7 1 0.03 0.050.07 0.1 0.2 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Turn−On Time Figure 4. Turn−Off Time 100 Duty Cycle = 0.5 0.2 0.1 10 0.05 W) 0.02 C/ ° (A 1 0.01 J (cid:2) R 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (sec) Figure 5. Thermal Response www.onsemi.com 3

MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 1000 150°C VCE = 4 V 150°C VCE = 2 V N N NT GAI 100 25°C −55°C NT GAI100 25°C −55°C E E R R R R U U C C DC 10 DC 10 , E , E F F h h 1 1 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. DC Current Gain at V = 4 V Figure 7. DC Current Gain at V = 2 V CE CE V) 0.6 GE ( 1.2 ON IC/IB = 10 TA 1.1 IC/IB = 10 TI 0.5 OL A V 1.0 UR N MITT SATAGE (V) 00..34 150°C ATURATIO 000...789 −5255°°CC ET S L−OL T 0.6 OLV 0.2 MIT 0.5 150°C C E , at) 0.1 25°C E− 0.4 s S CE( −55°C BA 0.3 V 0 , at) 0.2 0.001 0.01 0.1 1 10 E(s 0.001 0.01 0.1 1 10 B IC, COLLECTOR CURRENT (A) V IC, COLLECTOR CURRENT (A) Figure 8. Collector−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage V) 1.2 V) 2 GE ( 1.1 VCE = 5 V GE ( 2T5A° =C A A T 1.0 T 1.6 L L O O V 0.9 V N −55°C R O 0.8 E 1.2 R TT 100 mA 500 mA TE 0.7 25°C MI T E MI 0.6 R− 0.8 IC = 3 A E O SE− 0.5 150°C CT 1 A V, BABE(on) 000...2340.001 0.01 0.1 1 10V, COLLECE 0.040.0110 mA 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 10. Base-Emitter “On” Voltage Figure 11. Collector Saturation Region www.onsemi.com 4

MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN) 1000 100 TA = 25°C DTH TVAC E= =2 55° CV F) Cib DWI ANCE (p 100 N − BANT (MHz) CIT Cob GAIUC 10 PA T−OD A 10 NR C EP C, RR U C , T f 1 1 0.1 1 10 100 0.001 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 12. Capacitance Figure 13. Current−Gain−Bandwidth Product 10 A) T ( N E R 1 R U C R O T C E 0.1 L L O C , C I 0.01 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 14. Safe Operating Area www.onsemi.com 5

MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP) 1000 1000 150°C 25°C VCE = 4 V 150°C 25°C VCE = 2 V N N AI AI G G T 100 T 100 EN −55°C EN −55°C R R R R U U C C DC 10 DC 10 , E , E F F h h 1 1 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. DC Current Gain at V = 4 V Figure 16. DC Current Gain at V = 2 V CE CE 1 1.4 ON 0.9 IC/IB = 10 150°C IC/IB = 10 SATURATIV) 00..78 −55°C MITTERTAGE (V) 11..02 MITT AGE ( 00..56 SE−EN VOL 0.8 −55°C , COLL−EE(sat)VOLT 0000....1234 25°C V, BABE(sat)SATURATIO 00..46 12550°°CC C V 0 0.2 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector−Emitter Saturation Figure 18. Base−Emitter Saturation Voltage Voltage 1.2 V) 2 1.1 VCE = 5 V GE ( 500 mA 2T5A° =C ON 1.0 LTA 1.6 R O −EMITTEGE (V)000...789 150°C 25°C MITTER V 1.2 100 mA 1 A IC = 3 A ASEOLTA0.6 R−E 0.8 BV O , n) 0.5 CT VBE(o 0.4 −55°C OLLE 0.4 0.3 C 10 mA 0.2 , CE 0 0.001 0.01 0.1 1 10 V 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 19. Base−Emitter “On” Voltage Figure 20. Collector Saturation Region www.onsemi.com 6

MJD31 (NPN), MJD32 (PNP) TYPICAL CHARACTERISTICS 1000 100 TA = 25°C H VCE = 5 V DT TA = 25°C WI F) Cib D ANCE (p 100 Cob N − BANT (MHz) CIT GAIUC 10 PA T−OD A 10 NR C EP C, RR U C , T f 1 1 0.1 1 10 100 0.001 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 21. Capacitance Figure 22. Current−Gain−Bandwidth Product 10 A) T ( N E R R 1 1 ms U C 1 s R O T C E L 0.1 L O C , C I 0.01 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 23. Safe Operating Area www.onsemi.com 7

MJD31 (NPN), MJD32 (PNP) ORDERING INFORMATION Device Package Type Package Shipping† MJD31CG DPAK 369C 75 Units / Rail (Pb−Free) NJVMJD31CG* DPAK 369C 75 Units / Rail (Pb−Free) MJD31C1G IPAK 369D 75 Units / Rail (Pb−Free) MJD31CRLG DPAK 369C 1,800 / Tape & Reel (Pb−Free) NJVMJD31CRLG* DPAK 369C 1,800 / Tape & Reel (Pb−Free) MJD31CT4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD31CT4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) MJD31T4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD31T4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) MJD32CG DPAK 369C 75 Units / Rail (Pb−Free) NJVMJD32CG* DPAK 369C 75 Units / Rail (Pb−Free) MJD32CRLG DPAK 369C 1,800 / Tape & Reel (Pb−Free) MJD32CT4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD32CT4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) MJD32RLG DPAK 369C 1,800 / Tape & Reel (Pb−Free) MJD32T4G DPAK 369C 2,500 / Tape & Reel (Pb−Free) NJVMJD32T4G* DPAK 369C 2,500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 8

MJD31 (NPN), MJD32 (PNP) PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: A 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. E C 2.CONTROLLING DIMENSION: INCHES. A 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- b3 B MENSIONS b3, L3 and Z. c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL 4 NOT EXCEED 0.006 INCHES PER SIDE. L3 Z 5.DIMENSIONS D AND E ARE DETERMINED AT THE D DETAIL A H 6.DOAUTTUEMRSM OA SATN EDX BT RAERME EDSE OTEFR TMHIEN EPDLA ASTT DICA TBUOMDY. 1 2 3 PLANE H. 7.OPTIONAL MOLD FEATURE. L4 INCHES MILLIMETERS NOTE 7 b2 c BOTTOM VIEW DIM MIN MAX MIN MAX A 0.086 0.094 2.18 2.38 e SIDE VIEW A1 0.000 0.005 0.00 0.13 b b 0.025 0.035 0.63 0.89 0.005 (0.13) M C b2 0.028 0.045 0.72 1.14 TOP VIEW b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 H Z Z D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC L2 GPLAAUNGEE C SPELAATNIENG H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L A1 BOTTOM VIEW L3 0.035 0.050 0.89 1.27 L1 ALTERNATE L4 −−− 0.040 −−− 1.01 CONSTRUCTIONS Z 0.155 −−− 3.93 −−− DETAIL A ROTATED 90(cid:2) CW STYLE 1: SOLDERING FOOTPRINT* PIN 1.BASE 2.COLLECTOR 3.EMITTER 6.20 3.00 4.COLLECTOR 0.244 0.118 2.58 0.102 5.80 1.60 6.17 0.228 0.063 0.243 (cid:3) (cid:4) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9

MJD31 (NPN), MJD32 (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C B C NOTES: 1. DIMENSIONING AND TOLERANCING PER V R E ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS 4 Z DIM MIN MAX MIN MAX A 0.235 0.245 5.97 6.35 A S B 0.250 0.265 6.35 6.73 1 2 3 C 0.086 0.094 2.19 2.38 D 0.027 0.035 0.69 0.88 E 0.018 0.023 0.46 0.58 −T− F 0.037 0.045 0.94 1.14 SEATING G 0.090 BSC 2.29 BSC PLANE K H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 F J S 0.025 0.040 0.63 1.01 H V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− D 3 PL STYLE 1: G 0.13 (0.005) M T PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MJD31/D 10

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MJD31C MJD31C1 MJD31C1G MJD31CG MJD31CRL MJD31CRLG MJD31CT4 MJD31CT4G MJD31T4 MJD31T4G MJD32C MJD32C1 MJD32C1G MJD32CG MJD32CRL MJD32CRLG MJD32CT4 MJD32CT4G MJD32RL MJD32RLG MJD32T4 MJD32T4G MJD32CTF MJD32CTM MJD31CTF MJD31CITU MJD32CTF_NBDD002 MJD31CTF_SBDD001A MJD31CTF_NBDD001